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D1666 Transistor (IC) Datasheet. Cross Reference Search. D1666 Equivalent

Type Designator: D1666

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.2

Maximum collector-base voltage |Ucb|, V: 30

Maximum collector-emitter voltage |Uce|, V: 12

Maximum emitter-base voltage |Ueb|, V:

Maximum collector current |Ic max|, A: 0.025

Maksimalna temperatura (Tj), °C: 175

Transition frequency (ft), MHz: 500

Collector capacitance (Cc), pF: 1.5

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of D1666 transistor: TO98

D1666 Transistor Equivalent Substitute - Cross-Reference Search

D1666 PDF:

1.1. 2sd1666.pdf Size:30K _sanyo

D1666
D1666

Ordering number : ENN3031A 2SB1133 / 2SD1666 PNP / NPN Triple Diffused Planar Silicon Transistors 2SB1133 / 2SD1666 Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions Wide ASO(Adoption of MBIT process). unit : mm Micaless package facilitating easy mounting. 2041A High reliability. [2SB1133 / 2SD1666] 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1

1.2. 2sd1666.pdf Size:151K _inchange_semiconductor

D1666
D1666

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220F package Ў¤ Complement to type 2SB1133 Ў¤ High reliability Ў¤ Wide area of safe operation APPLICATIONS Ў¤ For low-frequency and general-purpose amplifier applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SD1666 Fig.1 simplified outline (TO-220F) and symbol

See also transistors datasheet: D11E406 , D11E407 , D12E026 , D12E109 , D12E126 , D12X043 , D12X047 , D150 , BC109 , D16E7 , D16E9 , D16G6 , D16K1 , D16K2 , D16K3 , D16K4 , D16P1 .

Search Terms:

 D1666 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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