All Transistors. D1666 Datasheet

 

D1666 Transistor. Datasheet pdf. Equivalent

Type Designator: D1666

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Collector Current |Ic max|: 0.025 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 500 MHz

Collector Capacitance (Cc): 1.5 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO98

D1666 Transistor Equivalent Substitute - Cross-Reference Search

D1666 Datasheet PDF:

1.1. 2sd1666.pdf Size:30K _sanyo

D1666
D1666

Ordering number : ENN3031A 2SB1133 / 2SD1666 PNP / NPN Triple Diffused Planar Silicon Transistors 2SB1133 / 2SD1666 Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions Wide ASO(Adoption of MBIT process). unit : mm Micaless package facilitating easy mounting. 2041A High reliability. [2SB1133 / 2SD1666] 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1

1.2. 2sd1666.pdf Size:151K _inchange_semiconductor

D1666
D1666

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220F package Ў¤ Complement to type 2SB1133 Ў¤ High reliability Ў¤ Wide area of safe operation APPLICATIONS Ў¤ For low-frequency and general-purpose amplifier applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SD1666 Fig.1 simplified outline (TO-220F) and symbol

Datasheet: D11E406 , D11E407 , D12E026 , D12E109 , D12E126 , D12X043 , D12X047 , D150 , BC109 , D16E7 , D16E9 , D16G6 , D16K1 , D16K2 , D16K3 , D16K4 , D16P1 .

 


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