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2N3440
  2N3440
  2N3440
 
2N3440
  2N3440
  2N3440
 
2N3440
  2N3440
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BU104
BU104D .. BU921ZP
BU921ZPFI .. BUP49
BUP50 .. BUW131
BUW131A .. BUY30
BUY32-100 .. CCS2008GF
CCS2053 .. CG040D
CG040E .. CK477
CK4A .. CP500
CP501 .. CSA1316GR
CSA1357 .. CSC1740
CSC1740S .. CSD786Q
CSD786R .. D26E1
D26E2 .. D40N2
D40N3 .. D60T4040
D60T4050 .. DSL12AW
DSS20200L .. DTA143ZE
DTA143ZEA .. DTD123YK
DTD143E .. ECG16
ECG160 .. ECG52
ECG53 .. ESM4007
ESM400A .. FCX1051A
FCX1053A .. FJY4004R
FJY4005R .. FMMT918R
FMMT929 .. FX3502
FX3503 .. GD110
GD114 .. GES5818
GES5819 .. GS111B
GS111C .. GT376A
GT383A .. HE9015
HEP637 .. HS5819
HS5820 .. IDI8003
IDI8004 .. JE9112A
JE9112B .. KRA105M
KRA105S .. KRA769E
KRA769U .. KRC841E
KRC841T .. KSB1116A-Y
KSB1116S .. KSC2883-O
KSC2883-Y .. KSD5076
KSD5078 .. KSY82
KT104A .. KT325BM
KT325V .. KT617A
KT618A .. KT8154A
KT8154B .. KT903B
KT904A .. KTB688B
KTB764 .. KTD8303A9
KTD863 .. MCH3105
MCH3106 .. MJ10100
MJ10101 .. MJD44H11-1
MJD44H11T4 .. MJE5982
MJE5983 .. MMBC1009F1
MMBC1009F2 .. MMBT6428
MMBT6428L .. MP115
MP116 .. MP5130
MP5131 .. MPS3391
MPS3391A .. MPSH24
MPSH30 .. MRF947AT3
MRF947BT1 .. NA12FG
NA12FH .. NB013HU
NB013HV .. NB212XH
NB212XI .. NKT13429
NKT135 .. NPS5449
NPS5550 .. NTE22
NTE226 .. OC822
OC823 .. PBSS5320T
PBSS5320X .. PMBT2369
PMBT2907 .. PRF949
PRF957 .. RCA1A18
RCA1A19 .. RN1701JE
RN1702 .. RN2901FS
RN2902 .. S17900
S1805 .. SDT9305
SDT9306 .. SJ5439
SJE1349 .. SRA2219S
SRA2219SF .. STC5608
STC5648 .. SZD4672
SZD5103 .. TA2514
TA2551 .. TIP146
TIP146F .. TIS53
TIS54 .. TN4142
TN4143 .. TPC6602
TPC6603 .. UN1115S
UN1116Q .. UN921M
UNR1110 .. ZT61
ZT62 .. ZTX453
ZTX454 .. ZXTPS718MC
ZXTPS720MC .. ZXTPS720MC
 
2N3440 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2N3440 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N3440

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 1

Maximum collector-base voltage |Ucb|, V: 300

Maximum collector-emitter voltage |Uce|, V: 250

Maximum emitter-base voltage |Ueb|, V: 7

Maximum collector current |Ic max|, A: 1

Maksimalna temperatura (Tj), Ā°C: 200

Transition frequency (ft), MHz: 15

Collector capacitance (Cc), pF: 10

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of 2N3440 transistor: TO5

2N3440 Equivalent Transistors - Cross-Reference Search

2N3440 PDF doc:

1.1. 2n3439_2n3440.pdf Size:47K _st

2N3440
2N3440
2N3439 2N3440 ® SILICON NPN TRANSISTORS STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR DESCRIPTION The 2N3439 and 2N3440 are silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 2N3439 2N3440 VCBO Collector-Base Voltage (IE = 0) 450 300 V VCEO Collector-Emitter Voltage (IB = 0) 350 250 V VEBO Emitter-Base Voltage (IC = 0) 7 V IC Collector Current 1 A I Base Current 0.5 A B Ptot Total Dissipation at Tc ? 25 oC 10 W Ptot Total Dissipation at Tamb ? 50 oC 1W o Tstg Storage Temperature -65 to 200 C o Tj Max. Operating Junction Temperature 200 C 1/4 December 2000 2N3439 / 2N3440 THERMAL DATA o Rthj-case Thermal Resistance Junction-case Max 17.5 C/W o

5.1. 2n3442r7.pdf Size:135K _motorola

2N3440
2N3440
Order this document MOTOROLA by 2N3442/D SEMICONDUCTOR TECHNICAL DATA 2N3442 High-Power Industrial Transistors 10 AMPERE NPN silicon power transistor designed for applications in industrial and commercial POWER TRANSISTOR equipment including high fidelity audio amplifiers, series and shunt regulators and NPN SILICON power switches. 140 VOLTS • Collector –Emitter Sustaining Voltage — 117 WATTS VCEO(sus) = 140 Vdc (Min) • Excellent Second Breakdown Capability CASE 1–07 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII TO–204AA IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIII IIIIII IIIII (TO–3) IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIII IIIIIII IIIIII IIIII IIIIII IIIII *MAXIMUM RATINGS IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIII IIIIIII IIIIII IIIII IIIIII IIIII IIIIII IIIII Rating Symbol Value Unit IIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIII

5.2. 2n3442.pdf Size:61K _central

2N3440
2N3440
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

5.3. 2n3442-d.pdf Size:65K _onsemi

2N3440
2N3440
2N3442 High-Power Industrial Transistors NPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. http://onsemi.com Features 10 AMPERE • Collector -Emitter Sustaining Voltage - VCEO(sus) = 140 Vdc (Min) POWER TRANSISTOR • Excellent Second Breakdown Capability NPN SILICON • Pb-Free Package is Available* 140 VOLTS - 117 WATTS MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector-Emitter Voltage VCEO 140 Vdc Collector-Base Voltage VCB 160 Vdc Emitter-Base Voltage VEB 7.0 Vdc Collector Current - Continuous IC 10 Adc - Peak 15 TO-204AA (TO-3) CASE 1-07 Base Current - Continuous IB 7.0 Adc STYLE 1 - Peak - Total Device Dissipation @ TC = 25_C PD 117 W Derate above 25_C (Note 2) 0.67 W/_C MARKING DIAGRAM Operating and Storage Junction TJ, Tstg -65 to +200 _C Temperature Range THERMAL CHARACTERISTICS Characteristics Symbol Max Uni

5.4. 2n3442-2n4347.pdf Size:197K _comset

2N3440
2N3440
2N3442 2N4347 HIGH POWER INDUSTRIAL TRANSISTORS HIGH POWER INDUSTRIAL TRANSISTORS NPN silicon transistors designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunts regulators and power switches. • Low Collector-Emitter Saturation Voltage – VCE(sat) = 1.0 Vdc (Max) @ IC = 2.0 Adc – 2N4347 • Collector-Emitter Sustaining Voltage- VCEO(sus) = 120 Vdc (Min) – 2N4347 140 Vdc (Min) – 2N3442 • Excellent Second-Breakdown Capability ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit 2N4347 120 VCEO #Collector-Emitter Voltage V 2N3442 140 2N4347 140 VCB Collector-Base Voltage Vdc 2N3442 160 2N4347 VEB Emitter-Base Voltage 7.0 Vdc 2N3442 2N4347 5.0 Continuous 2N3442 10 Collector Current IC Adc 2N4347 10 Peak 2N3442 15 (**) 2N4347 3.0 Continuous 2N3442 7.0 IB Base Current Adc 2N4347 8.0 Peak 2N3442 - 2N4347 100 @ TC = 25° Total Device Dissipation 2N3442 117 Watts PD 2N4347 Derate 0.57 W/°C

5.5. 2n4347_2n3442.pdf Size:132K _mospec

2N3440
2N3440
A A A

5.6. 2n3447.pdf Size:11K _semelab

2N3440
2N3440
2N3447 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 60V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 7.5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. TO3 (TO204AA) PINOUTS 1 – Base 2 – Emitter Case - Collector Parameter Test Conditions Min. Typ. Max. Units VCEO* 60 V IC(CONT) 7.5 A hFE @ 5.0/3.0 (VCE / IC) 40 120 - ft Hz PD 115 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliabl

5.7. 2n3441.pdf Size:13K _semelab

2N3440
2N3440
2N3441 SEME LAB MECHANICAL DATA Dimensions in mm (inches) MEDIUM POWER SILICON NPN 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. TRANSISTOR 3.61 (0.142) max. 3.86 (0.145) rad. FEATURES • Low Saturation Voltages • High Voltage Ratings • Maximum Safe–Operating–Area Curves for DC and Pulse Operation. 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. APPLICATIONS • Series and Shunt Regulators TO–66 • Audio Amplifiers PIN 1 — Base • Power Switching Circuits PIN 2 — Emitter Case is Collector. • Solenoid and Relay Drivers ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO Collector – Base Voltage 160V VCEO Collector – Emitter Voltage 140V VEBO Emitter – Base Voltage 7V IC Collector Current 3A IB Base Current 2A Ptot Total Power Dissipation 25W Derate above 25°C 0.142 W /°C Tj , Tstg Operating and Storage Junction Temperature Range –65 to 200°C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Pre

5.8. 2n3445.pdf Size:11K _semelab

2N3440
2N3440
2N3445 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 60V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 7.5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. TO3 (TO204AA) PINOUTS 1 – Base 2 – Emitter Case - Collector Parameter Test Conditions Min. Typ. Max. Units VCEO* 60 V IC(CONT) 7.5 A hFE @ 5.0/3.0 (VCE / IC) 20 60 - ft Hz PD 115 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable

5.9. 2n3445.pdf Size:172K _jmnic

2N3440
2N3440
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N3445 DESCRIPTION Ā·With TO-3 package Ā·Excellent safe operating area APPLICATIONS Ā·Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 7.5 A PC Collector power dissipation TC=25? 115 W Tj Junction temperature 150 ? Tstg Storage temperature -65~200 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 1.17 ?/W Product Specification www.jmnic.com Silicon NPN Power Transistors 2N3445 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emit

5.10. 2n3446.pdf Size:172K _jmnic

2N3440
2N3440
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N3446 DESCRIPTION Ā·With TO-3 package Ā·Excellent safe operating area APPLICATIONS Ā·Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 7.5 A PC Collector power dissipation TC=25? 115 W Tj Junction temperature 150 ? Tstg Storage temperature -65~200 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 1.17 ?/W Product Specification www.jmnic.com Silicon NPN Power Transistors 2N3446 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-e

5.11. 2n3447.pdf Size:129K _inchange_semiconductor

2N3440
2N3440
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3447 DESCRIPTION Ā·With TO-3 package Ā·Excellent safe operating area APPLICATIONS Ā·Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 7.5 A PC Collector power dissipation TC=25? 115 W Tj Junction temperature 150 ? Storage temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Thermal resistance junction to case 1.17 ?/W R(th) jc Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3447 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UN

5.12. 2n3441.pdf Size:130K _inchange_semiconductor

2N3440
2N3440
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3441 DESCRIPTION Ā·With TO-66 package Ā·Continuous collector current-IC=3A Ā·Power dissipation -PD=25W @TC=25? APPLICATIONS For use in general-purpose switching and Linear amplifier applications such as: Ā·Driver for high power outputs Ā·Series and shunt regulators Ā·Audio and servo amplifiers Ā·Solenoid and relay drivers Ā·Power switching circuits PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 160 V VCEO Collector-emitter voltage Open base 140 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 3 A IB Base current 2 A PD Total power dissipation TC=25? 25 W Tj Junction temperature 200 ? Storage temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX

5.13. 2n3442.pdf Size:130K _inchange_semiconductor

2N3440
2N3440
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3442 DESCRIPTION Ā·With TO-3 package Ā·Excellent safe operating area APPLICATIONS Ā·For industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 160 V VCEO Collector-emitter voltage Open base 140 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A ICM Collector current-peak 15 A PC Collector power dissipation TC=25? 117 W Tj Junction temperature 150 ? Storage temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Thermal resistance junction to case 1.5 ?/W R(th) jc Inchange Semiconductor Product Specification Silicon NPN Po

5.14. 2n3445.pdf Size:114K _inchange_semiconductor

2N3440
2N3440
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3445 DESCRIPTION ŠˇĀ¤ With TO-3 package ŠˇĀ¤ Excellent safe operating area APPLICATIONS ŠˇĀ¤ Designed for medium-switching and amplifier applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=ŠˇŠ¶ ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER I CHAN N Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Collector-base voltage SEMIC GE Open emitter Open base Open collector TC=25ŠˇŠ¶ CONDITIONS O CTOR NDU VALUE 80 80 7 7.5 115 150 -65~200 UNIT V V V A W ŠˇŠ¶ ŠˇŠ¶ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT ŠˇŠ¶ /W

5.15. 2n3446.pdf Size:114K _inchange_semiconductor

2N3440
2N3440
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3446 DESCRIPTION ŠˇĀ¤ With TO-3 package ŠˇĀ¤ Excellent safe operating area APPLICATIONS ŠˇĀ¤ Designed for medium-switching and amplifier applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=ŠˇŠ¶ ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage I HANG NC Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature O EMIC ES Open emitter Open base Open collector TC=25ŠˇŠ¶ CONDITIONS CTOR NDU VALUE 100 100 7 7.5 115 150 -65~200 UNIT V V V A W ŠˇŠ¶ ŠˇŠ¶ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT ŠˇŠ¶ /W

5.16. 2n3448.pdf Size:129K _inchange_semiconductor

2N3440
2N3440
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3448 DESCRIPTION Ā·With TO-3 package Ā·Excellent Safe Operating Area APPLICATIONS Ā·Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 7.5 A PC Collector power dissipation TC=25? 115 W Tj Junction temperature 150 ? Storage temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Thermal resistance junction to case 1.17 ?/W R(th) jc Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3448 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX

See also transistors datasheet: 2N3435 , 2N3439 , 2N3439CSM4 , 2N3439L , 2N3439S , 2N343A , 2N343B , 2N344 , D882 , 2N3440CSM4 , 2N3440L , 2N3440S , 2N3441 , 2N3441X , 2N3441Y , 2N3442 , 2N3443 .

Keywords

 2N3440 Datasheet  2N3440 Datenblatt  2N3440 RoHS  2N3440 Distributor
 2N3440 Application Notes  2N3440 Component  2N3440 Circuit  2N3440 Schematic
 2N3440 Equivalent  2N3440 Cross Reference  2N3440 Data Sheet  2N3440 Fiche Technique

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