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2N3440
  2N3440
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2N3440
  2N3440
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2N3440
  2N3440
 
 
List
100DA025D .. 2N100
2N1000 .. 2N119
2N1190 .. 2N1412A
2N1413 .. 2N1655
2N1656 .. 2N1990R
2N1990S .. 2N2221A
2N2221ACSM .. 2N2484ACSM
2N2484ADCSM .. 2N2773
2N2774 .. 2N2970
2N2971 .. 2N3241A
2N3242 .. 2N3506
2N3506L .. 2N3791SM
2N3792 .. 2N4057
2N4058 .. 2N457A
2N457B .. 2N5101
2N5102 .. 2N5356
2N5357 .. 2N5704
2N5705 .. 2N6022
2N6024 .. 2N634A
2N635 .. 2N6655-2
2N6655A .. 2N819
2N82 .. 2S120
2S121 .. 2SA1079
2SA108 .. 2SA1282
2SA1282A .. 2SA1408R
2SA1409 .. 2SA1577W
2SA1578 .. 2SA183
2SA1830 .. 2SA249
2SA25 .. 2SA496Y
2SA497 .. 2SA725
2SA726 .. 2SA927
2SA928 .. 2SB1102
2SB1103 .. 2SB1261
2SB1261-Z .. 2SB1555B
2SB1555C .. 2SB311
2SB312 .. 2SB511F
2SB512 .. 2SB696K
2SB697 .. 2SB858C
2SB858D .. 2SC1044
2SC1045 .. 2SC1253
2SC1254 .. 2SC1469A
2SC146A .. 2SC169
2SC1698 .. 2SC1924
2SC1925 .. 2SC2196
2SC2197 .. 2SC24
2SC240 .. 2SC2630
2SC2631 .. 2SC2821
2SC2821E .. 2SC306
2SC3060 .. 2SC3262
2SC3263 .. 2SC3443
2SC3444 .. 2SC3617
2SC3618 .. 2SC3780C
2SC3780D .. 2SC3981
2SC3982 .. 2SC4163L
2SC4163M .. 2SC4422
2SC4423 .. 2SC4725
2SC4726 .. 2SC5031N
2SC5031O .. 2SC5323
2SC5324 .. 2SC569
2SC5690 .. 2SC647P
2SC648 .. 2SC847
2SC848 .. 2SD1020G
2SD1020O .. 2SD1218
2SD1219 .. 2SD1402O
2SD1403 .. 2SD1618E
2SD1618S .. 2SD1803
2SD1803Q .. 2SD2017
2SD2018 .. 2SD2342B
2SD2342C .. 2SD313E
2SD313F .. 2SD532
2SD533 .. 2SD732
2SD732K .. 2SD931
2SD932 .. 3DD5024P
3DD5032 .. 40412V2
40413 .. 9013F
9013G .. AC180KL
AC180L .. AD462
AD463 .. AM1011-075
AM1011-300 .. BC107CSM
BC107P .. BC206C
BC207 .. BC307C
BC307VI .. BC418VI
BC419 .. BC558A
BC558AP .. BC848CW
BC848CWT1 .. BCP628C
BCP669A .. BCW66KG
BCW66KH .. BCX78-10
BCX78-7 .. BD149
BD149-10 .. BD281
BD282 .. BD515
BD515-1 .. BD814A
BD815 .. BDT60AF
BDT60B .. BDX37
BDX40 .. BF118
BF119 .. BF345
BF355 .. BF642
BF642P .. BFN23R
BFN24 .. BFR81
BFR81TO5 .. BFV10
BFV11 .. BFX79
BFX80 .. BLW46
BLW47 .. BSP52
BSP52T1 .. BSW21
BSW21A .. BT2604
BT2604T .. BTN2222AL3
BTN2222AN3 .. BU526A-7
BU526A-8 .. BUL704
BUL705 .. BUV46
BUV46A .. BUX82-5
BUX82-6 .. C9083
C9084 .. CENU52
CENU55 .. CJD340
CJD3439 .. CMPTA13
CMPTA14 .. CS9015A
CS9015B .. CSC1008
CSC1008G .. CSD1563AP
CSD1563AQ .. D10-28B
D100 .. D39C3
D39C4 .. D44VM5
D44VM6 .. DH3724CN
DH3725CD .. DTA123EE
DTA123EEA .. DTC143TEA
DTC143TKA .. DXTP03200BP5
DXTP19020DP5 .. ECG344
ECG345 .. ES3126
ESM1000 .. FA1L3N
FA1L4L .. FJPF13009
FJPF3305 .. FMMT5088
FMMT5089 .. FT317A
FT317B .. GA53104
GA53149 .. GES4123
GES4124 .. GFT34-15
GFT34-30 .. GT2765
GT2766 .. HA7507
HA7510 .. HMBT2222A
HMBT2369 .. HUN2115
HUN2116 .. JA101P
JA101Q .. KD338
KD3442 .. KRA557F
KRA557U .. KRC416
KRC416E .. KSA1241O
KSA1241Y .. KSC2223Y
KSC2233 .. KSC945L
KSC945O .. KSP25
KSP26 .. KT3128B-1
KT3128B1 .. KT501V
KT502A .. KT808A
KT808A3 .. KT837A
KT837A1-IM .. KT997B
KT999A .. KTC3883
KTC3911 .. L8550HQLT1G
L8550HRLT1G .. MA8001
MA8002 .. MHQ2221
MHQ2222 .. MJD117L
MJD117T4 .. MJE488
MJE49 .. MM4429
MM4430 .. MMBT5127
MMBT5128 .. MMUN2214L
MMUN2215 .. MP4051
MP4052 .. MPQ5857
MPQ5858 .. MPS918R
MPS929 .. MRF449
MRF450 .. NA01EH
NA01EI .. NB011FV
NB011FY .. NB123H
NB123HH .. NB323Y
NB323Z .. NPS3707
NPS3708 .. NSS35200CF8T1G
NSS35200MR6T1G .. OC450
OC450K .. PBSS304NX
PBSS304NZ .. PEMB10
PEMB11 .. PN3906
PN3906R .. PZT5401
PZT5551 .. RN1116MFV
RN1117 .. RN2302
RN2303 .. RS7241
RS7406 .. SCE308
SCE309 .. SFT288
SFT298 .. SPS6012
SPS8050 .. ST2SB772U
ST2SB9435U .. STX83003
STX93003 .. T1973
T1992 .. TEC9013G
TEC9013H .. TIP50J3
TIP51 .. TK35
TK35C .. TP2712
TP2713 .. TTC003
TTC004 .. UN4111
UN4112 .. WT5501-05
WT5601-06 .. ZTX214C
ZTX214CK .. ZTX955
ZTX956 .. ZXTPS720MC
 
2N3440 All Transistors Datasheet. BJT, Power MOSFET, IGBT, IC Catalog
 

2N3440 Transistor (IC) Datasheet. Cross Reference Search. 2N3440 Equivalent

Type Designator: 2N3440

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 1

Maximum collector-base voltage |Ucb|, V: 300

Maximum collector-emitter voltage |Uce|, V: 250

Maximum emitter-base voltage |Ueb|, V: 7

Maximum collector current |Ic max|, A: 1

Maksimalna temperatura (Tj), Ā°C: 200

Transition frequency (ft), MHz: 15

Collector capacitance (Cc), pF: 10

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of 2N3440 transistor: TO5

2N3440 Equivalent Transistors - Cross-Reference Search

 

2N3440 PDF doc:

1.1. 2n3439_2n3440.pdf Size:47K _st

2N3440
2N3440
2N3439 2N3440 ® SILICON NPN TRANSISTORS STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR DESCRIPTION The 2N3439 and 2N3440 are silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 2N3439 2N3440 VCBO Collector-Base Voltage (IE = 0) 450 300 V VCEO Collector-Emitter Voltage (IB = 0) 350 250 V VEBO Emitter-Base Voltage (IC = 0) 7 V IC Collector Current 1 A I Base Current 0.5 A B Ptot Total Dissipation at Tc ? 25 oC 10 W Ptot Total Dissipation at Tamb ? 50 oC 1W o Tstg Storage Temperature -65 to 200 C o Tj Max. Operating Junction Temperature 200 C 1/4 December 2000 2N3439 / 2N3440 THERMAL DATA o Rthj-case Thermal Resistance Junction-case Max 17.5 C/W o

5.1. 2n3442r7.pdf Size:135K _motorola

2N3440
2N3440
Order this document MOTOROLA by 2N3442/D SEMICONDUCTOR TECHNICAL DATA 2N3442 High-Power Industrial Transistors 10 AMPERE NPN silicon power transistor designed for applications in industrial and commercial POWER TRANSISTOR equipment including high fidelity audio amplifiers, series and shunt regulators and NPN SILICON power switches. 140 VOLTS • Collector –Emitter Sustaining Voltage — 117 WATTS VCEO(sus) = 140 Vdc (Min) • Excellent Second Breakdown Capability CASE 1–07 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII TO–204AA IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIII IIIIII IIIII (TO–3) IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIII IIIIIII IIIIII IIIII IIIIII IIIII *MAXIMUM RATINGS IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIII IIIIIII IIIIII IIIII IIIIII IIIII IIIIII IIIII Rating Symbol Value Unit IIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIII

5.2. 2n3442.pdf Size:61K _central

2N3440
2N3440
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

5.3. 2n3442-d.pdf Size:65K _onsemi

2N3440
2N3440
2N3442 High-Power Industrial Transistors NPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. http://onsemi.com Features 10 AMPERE • Collector -Emitter Sustaining Voltage - VCEO(sus) = 140 Vdc (Min) POWER TRANSISTOR • Excellent Second Breakdown Capability NPN SILICON • Pb-Free Package is Available* 140 VOLTS - 117 WATTS MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector-Emitter Voltage VCEO 140 Vdc Collector-Base Voltage VCB 160 Vdc Emitter-Base Voltage VEB 7.0 Vdc Collector Current - Continuous IC 10 Adc - Peak 15 TO-204AA (TO-3) CASE 1-07 Base Current - Continuous IB 7.0 Adc STYLE 1 - Peak - Total Device Dissipation @ TC = 25_C PD 117 W Derate above 25_C (Note 2) 0.67 W/_C MARKING DIAGRAM Operating and Storage Junction TJ, Tstg -65 to +200 _C Temperature Range THERMAL CHARACTERISTICS Characteristics Symbol Max Uni

5.4. 2n3442-2n4347.pdf Size:197K _comset

2N3440
2N3440
2N3442 2N4347 HIGH POWER INDUSTRIAL TRANSISTORS HIGH POWER INDUSTRIAL TRANSISTORS NPN silicon transistors designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunts regulators and power switches. • Low Collector-Emitter Saturation Voltage – VCE(sat) = 1.0 Vdc (Max) @ IC = 2.0 Adc – 2N4347 • Collector-Emitter Sustaining Voltage- VCEO(sus) = 120 Vdc (Min) – 2N4347 140 Vdc (Min) – 2N3442 • Excellent Second-Breakdown Capability ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit 2N4347 120 VCEO #Collector-Emitter Voltage V 2N3442 140 2N4347 140 VCB Collector-Base Voltage Vdc 2N3442 160 2N4347 VEB Emitter-Base Voltage 7.0 Vdc 2N3442 2N4347 5.0 Continuous 2N3442 10 Collector Current IC Adc 2N4347 10 Peak 2N3442 15 (**) 2N4347 3.0 Continuous 2N3442 7.0 IB Base Current Adc 2N4347 8.0 Peak 2N3442 - 2N4347 100 @ TC = 25° Total Device Dissipation 2N3442 117 Watts PD 2N4347 Derate 0.57 W/°C

5.5. 2n4347_2n3442.pdf Size:132K _mospec

2N3440
2N3440
A A A

5.6. 2n3441.pdf Size:13K _semelab

2N3440
2N3440
2N3441 SEME LAB MECHANICAL DATA Dimensions in mm (inches) MEDIUM POWER SILICON NPN 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. TRANSISTOR 3.61 (0.142) max. 3.86 (0.145) rad. FEATURES • Low Saturation Voltages • High Voltage Ratings • Maximum Safe–Operating–Area Curves for DC and Pulse Operation. 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. APPLICATIONS • Series and Shunt Regulators TO–66 • Audio Amplifiers PIN 1 — Base • Power Switching Circuits PIN 2 — Emitter Case is Collector. • Solenoid and Relay Drivers ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO Collector – Base Voltage 160V VCEO Collector – Emitter Voltage 140V VEBO Emitter – Base Voltage 7V IC Collector Current 3A IB Base Current 2A Ptot Total Power Dissipation 25W Derate above 25°C 0.142 W /°C Tj , Tstg Operating and Storage Junction Temperature Range –65 to 200°C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Pre

5.7. 2n3447.pdf Size:11K _semelab

2N3440
2N3440
2N3447 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 60V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 7.5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. TO3 (TO204AA) PINOUTS 1 – Base 2 – Emitter Case - Collector Parameter Test Conditions Min. Typ. Max. Units VCEO* 60 V IC(CONT) 7.5 A hFE @ 5.0/3.0 (VCE / IC) 40 120 - ft Hz PD 115 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliabl

5.8. 2n3445.pdf Size:11K _semelab

2N3440
2N3440
2N3445 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 60V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 7.5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. TO3 (TO204AA) PINOUTS 1 – Base 2 – Emitter Case - Collector Parameter Test Conditions Min. Typ. Max. Units VCEO* 60 V IC(CONT) 7.5 A hFE @ 5.0/3.0 (VCE / IC) 20 60 - ft Hz PD 115 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable

5.9. 2n3445.pdf Size:172K _jmnic

2N3440
2N3440
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N3445 DESCRIPTION Ā·With TO-3 package Ā·Excellent safe operating area APPLICATIONS Ā·Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 7.5 A PC Collector power dissipation TC=25? 115 W Tj Junction temperature 150 ? Tstg Storage temperature -65~200 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 1.17 ?/W Product Specification www.jmnic.com Silicon NPN Power Transistors 2N3445 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emit

5.10. 2n3446.pdf Size:172K _jmnic

2N3440
2N3440
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N3446 DESCRIPTION Ā·With TO-3 package Ā·Excellent safe operating area APPLICATIONS Ā·Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 7.5 A PC Collector power dissipation TC=25? 115 W Tj Junction temperature 150 ? Tstg Storage temperature -65~200 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 1.17 ?/W Product Specification www.jmnic.com Silicon NPN Power Transistors 2N3446 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-e

5.11. 2n3441.pdf Size:130K _inchange_semiconductor

2N3440
2N3440
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3441 DESCRIPTION Ā·With TO-66 package Ā·Continuous collector current-IC=3A Ā·Power dissipation -PD=25W @TC=25? APPLICATIONS For use in general-purpose switching and Linear amplifier applications such as: Ā·Driver for high power outputs Ā·Series and shunt regulators Ā·Audio and servo amplifiers Ā·Solenoid and relay drivers Ā·Power switching circuits PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 160 V VCEO Collector-emitter voltage Open base 140 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 3 A IB Base current 2 A PD Total power dissipation TC=25? 25 W Tj Junction temperature 200 ? Storage temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX

5.12. 2n3447.pdf Size:129K _inchange_semiconductor

2N3440
2N3440
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3447 DESCRIPTION Ā·With TO-3 package Ā·Excellent safe operating area APPLICATIONS Ā·Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 7.5 A PC Collector power dissipation TC=25? 115 W Tj Junction temperature 150 ? Storage temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Thermal resistance junction to case 1.17 ?/W R(th) jc Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3447 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UN

5.13. 2n3448.pdf Size:129K _inchange_semiconductor

2N3440
2N3440
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3448 DESCRIPTION Ā·With TO-3 package Ā·Excellent Safe Operating Area APPLICATIONS Ā·Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 7.5 A PC Collector power dissipation TC=25? 115 W Tj Junction temperature 150 ? Storage temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Thermal resistance junction to case 1.17 ?/W R(th) jc Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3448 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX

5.14. 2n3442.pdf Size:130K _inchange_semiconductor

2N3440
2N3440
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3442 DESCRIPTION Ā·With TO-3 package Ā·Excellent safe operating area APPLICATIONS Ā·For industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 160 V VCEO Collector-emitter voltage Open base 140 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A ICM Collector current-peak 15 A PC Collector power dissipation TC=25? 117 W Tj Junction temperature 150 ? Storage temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Thermal resistance junction to case 1.5 ?/W R(th) jc Inchange Semiconductor Product Specification Silicon NPN Po

5.15. 2n3445.pdf Size:114K _inchange_semiconductor

2N3440
2N3440
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3445 DESCRIPTION ŠˇĀ¤ With TO-3 package ŠˇĀ¤ Excellent safe operating area APPLICATIONS ŠˇĀ¤ Designed for medium-switching and amplifier applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=ŠˇŠ¶ ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER I CHAN N Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Collector-base voltage SEMIC GE Open emitter Open base Open collector TC=25ŠˇŠ¶ CONDITIONS O CTOR NDU VALUE 80 80 7 7.5 115 150 -65~200 UNIT V V V A W ŠˇŠ¶ ŠˇŠ¶ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT ŠˇŠ¶ /W

5.16. 2n3446.pdf Size:114K _inchange_semiconductor

2N3440
2N3440
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3446 DESCRIPTION ŠˇĀ¤ With TO-3 package ŠˇĀ¤ Excellent safe operating area APPLICATIONS ŠˇĀ¤ Designed for medium-switching and amplifier applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=ŠˇŠ¶ ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage I HANG NC Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature O EMIC ES Open emitter Open base Open collector TC=25ŠˇŠ¶ CONDITIONS CTOR NDU VALUE 100 100 7 7.5 115 150 -65~200 UNIT V V V A W ŠˇŠ¶ ŠˇŠ¶ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT ŠˇŠ¶ /W

See also transistors datasheet: 2N3435 , 2N3439 , 2N3439CSM4 , 2N3439L , 2N3439S , 2N343A , 2N343B , 2N344 , D882 , 2N3440CSM4 , 2N3440L , 2N3440S , 2N3441 , 2N3441X , 2N3441Y , 2N3442 , 2N3443 .

Keywords

 2N3440 Datasheet  2N3440 Design 2N3440 MOSFET 2N3440 Power
 2N3440 RoHS Compliant 2N3440 Service 2N3440 Triacs 2N3440 Semiconductor
 2N3440 Database 2N3440 Innovation 2N3440 IC 2N3440 Electricity

 

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