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2N3440 Transistor (IC) Datasheet. Cross Reference Search. 2N3440 Equivalent

Type Designator: 2N3440

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 1

Maximum collector-base voltage |Ucb|, V: 300

Maximum collector-emitter voltage |Uce|, V: 250

Maximum emitter-base voltage |Ueb|, V: 7

Maximum collector current |Ic max|, A: 1

Maksimalna temperatura (Tj), ¬įC: 200

Transition frequency (ft), MHz: 15

Collector capacitance (Cc), pF: 10

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of 2N3440 transistor: TO5

2N3440 Transistor Equivalent Substitute - Cross-Reference Search

 

2N3440 PDF:

1.1. 2n3439_2n3440.pdf Size:47K _st

2N3440
2N3440

2N3439 2N3440 ģ SILICON NPN TRANSISTORS STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR DESCRIPTION The 2N3439 and 2N3440 are silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and series r

5.1. 2n3442r7.pdf Size:135K _motorola

2N3440
2N3440

Order this document MOTOROLA by 2N3442/D SEMICONDUCTOR TECHNICAL DATA 2N3442 High-Power Industrial Transistors 10 AMPERE NPN silicon power transistor designed for applications in industrial and commercial POWER TRANSISTOR equipment including high fidelity audio amplifiers, series and shunt regulators and NPN SILICON power switches. 140 VOLTS ē Collector ĖEmitter Sustaining Voltage ó

5.2. 2n3442.pdf Size:61K _central

2N3440
2N3440

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 ē Fax: (631) 435-1824

5.3. 2n3442-d.pdf Size:65K _onsemi

2N3440
2N3440

2N3442 High-Power Industrial Transistors NPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. http://onsemi.com Features 10 AMPERE ē Collector -Emitter Sustaining Voltage - VCEO(sus) = 140 Vdc (Min) POWER TRANSISTOR ē Excellent Second Breakdown Capability N

5.4. 2n3442-2n4347.pdf Size:197K _comset

2N3440
2N3440

2N3442 2N4347 HIGH POWER INDUSTRIAL TRANSISTORS HIGH POWER INDUSTRIAL TRANSISTORS NPN silicon transistors designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunts regulators and power switches. ē Low Collector-Emitter Saturation Voltage Ė VCE(sat) = 1.0 Vdc (Max) @ IC = 2.0 Adc Ė 2N4347 ē Collector-Emitter Sustaining Volta

5.5. 2n4347_2n3442.pdf Size:132K _mospec

2N3440
2N3440

A A A

5.6. 2n3441.pdf Size:13K _semelab

2N3440
2N3440

2N3441 SEME LAB MECHANICAL DATA Dimensions in mm (inches) MEDIUM POWER SILICON NPN 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. TRANSISTOR 3.61 (0.142) max. 3.86 (0.145) rad. FEATURES ē Low Saturation Voltages ē High Voltage Ratings ē Maximum SafeĖOperatingĖArea Curves for DC and Pulse Operation. 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. APPLI

5.7. 2n3447.pdf Size:11K _semelab

2N3440
2N3440

2N3447 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 60V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 7.5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acc

5.8. 2n3445.pdf Size:11K _semelab

2N3440
2N3440

2N3445 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 60V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 7.5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acc

5.9. 2n3445.pdf Size:172K _jmnic

2N3440
2N3440

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N3445 DESCRIPTION ·With TO-3 package ·Excellent safe operating area APPLICATIONS ·Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNI

5.10. 2n3446.pdf Size:172K _jmnic

2N3440
2N3440

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N3446 DESCRIPTION ·With TO-3 package ·Excellent safe operating area APPLICATIONS ·Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNI

5.11. 2n3441.pdf Size:130K _inchange_semiconductor

2N3440
2N3440

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3441 DESCRIPTION ·With TO-66 package ·Continuous collector current-IC=3A ·Power dissipation -PD=25W @TC=25? APPLICATIONS For use in general-purpose switching and Linear amplifier applications such as: ·Driver for high power outputs ·Series and shunt regulators ·Audio and servo amplifiers ·So

5.12. 2n3447.pdf Size:129K _inchange_semiconductor

2N3440
2N3440

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3447 DESCRIPTION ·With TO-3 package ·Excellent safe operating area APPLICATIONS ·Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER CONDITIO

5.13. 2n3448.pdf Size:129K _inchange_semiconductor

2N3440
2N3440

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3448 DESCRIPTION ·With TO-3 package ·Excellent Safe Operating Area APPLICATIONS ·Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER CONDITIO

5.14. 2n3442.pdf Size:130K _inchange_semiconductor

2N3440
2N3440

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3442 DESCRIPTION ·With TO-3 package ·Excellent safe operating area APPLICATIONS ·For industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3

5.15. 2n3445.pdf Size:114K _inchange_semiconductor

2N3440
2N3440

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3445 DESCRIPTION Ў¤ With TO-3 package Ў¤ Excellent safe operating area APPLICATIONS Ў¤ Designed for medium-switching and amplifier applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC

5.16. 2n3446.pdf Size:114K _inchange_semiconductor

2N3440
2N3440

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3446 DESCRIPTION Ў¤ With TO-3 package Ў¤ Excellent safe operating area APPLICATIONS Ў¤ Designed for medium-switching and amplifier applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC

See also transistors datasheet: 2N3435 , 2N3439 , 2N3439CSM4 , 2N3439L , 2N3439S , 2N343A , 2N343B , 2N344 , D882 , 2N3440CSM4 , 2N3440L , 2N3440S , 2N3441 , 2N3441X , 2N3441Y , 2N3442 , 2N3443 .

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