2N3442 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N3442

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 117

Maximum collector-base voltage |Ucb|, V: 160

Maximum collector-emitter voltage |Uce|, V: 140

Maximum emitter-base voltage |Ueb|, V: 7

Maximum collector current |Ic max|, A: 10

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 0.5

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of 2N3442 transistor: TO204AA

2N3442 Equivalent Transistors - Cross-Reference Search

2N3442 PDF document for downloads:

1.1. 2n3442r7.pdf Size:135K _motorola

Order this document MOTOROLA by 2N3442/D SEMICONDUCTOR TECHNICAL DATA 2N3442 High-Power Industrial Transistors 10 AMPERE NPN silicon power transistor designed for applications in industrial and commercial POWER TRANSISTOR equipment including high fidelity audio amplifiers, series and shunt regulators and NPN SILICON power switches. 140 VOLTS • Collector –Emitter Sustaining Voltage — 117 WATTS VCEO(sus) = 140 Vdc (Min) • Excellent Second Breakdown Capability CASE 1–07 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII TO–204AA IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIII IIIIII IIIII (TO–3) IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIII IIIIIII IIIIII IIIII IIIIII IIIII *MAXIMUM RATINGS IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIII IIIIIII IIIIII IIIII IIIIII IIIII IIIIII IIIII Rating Symbol Value Unit IIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIII

1.2. 2n3442.pdf Size:61K _central

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.3. 2n3442-d.pdf Size:65K _onsemi

2N3442 High-Power Industrial Transistors NPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. http://onsemi.com Features 10 AMPERE • Collector -Emitter Sustaining Voltage - VCEO(sus) = 140 Vdc (Min) POWER TRANSISTOR • Excellent Second Breakdown Capability NPN SILICON • Pb-Free Package is Available* 140 VOLTS - 117 WATTS MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector-Emitter Voltage VCEO 140 Vdc Collector-Base Voltage VCB 160 Vdc Emitter-Base Voltage VEB 7.0 Vdc Collector Current - Continuous IC 10 Adc - Peak 15 TO-204AA (TO-3) CASE 1-07 Base Current - Continuous IB 7.0 Adc STYLE 1 - Peak - Total Device Dissipation @ TC = 25_C PD 117 W Derate above 25_C (Note 2) 0.67 W/_C MARKING DIAGRAM Operating and Storage Junction TJ, Tstg -65 to +200 _C Temperature Range THERMAL CHARACTERISTICS Characteristics Symbol Max Uni

1.4. 2n3442-2n4347.pdf Size:197K _comset

2N3442 2N4347 HIGH POWER INDUSTRIAL TRANSISTORS HIGH POWER INDUSTRIAL TRANSISTORS NPN silicon transistors designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunts regulators and power switches. • Low Collector-Emitter Saturation Voltage – VCE(sat) = 1.0 Vdc (Max) @ IC = 2.0 Adc – 2N4347 • Collector-Emitter Sustaining Voltage- VCEO(sus) = 120 Vdc (Min) – 2N4347 140 Vdc (Min) – 2N3442 • Excellent Second-Breakdown Capability ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit 2N4347 120 VCEO #Collector-Emitter Voltage V 2N3442 140 2N4347 140 VCB Collector-Base Voltage Vdc 2N3442 160 2N4347 VEB Emitter-Base Voltage 7.0 Vdc 2N3442 2N4347 5.0 Continuous 2N3442 10 Collector Current IC Adc 2N4347 10 Peak 2N3442 15 (**) 2N4347 3.0 Continuous 2N3442 7.0 IB Base Current Adc 2N4347 8.0 Peak 2N3442 - 2N4347 100 @ TC = 25° Total Device Dissipation 2N3442 117 Watts PD 2N4347 Derate 0.57 W/°C

1.5. 2n4347_2n3442.pdf Size:132K _mospec

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1.6. 2n3442.pdf Size:130K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3442 DESCRIPTION ·With TO-3 package ·Excellent safe operating area APPLICATIONS ·For industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 160 V VCEO Collector-emitter voltage Open base 140 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A ICM Collector current-peak 15 A PC Collector power dissipation TC=25? 117 W Tj Junction temperature 150 ? Storage temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Thermal resistance junction to case 1.5 ?/W R(th) jc Inchange Semiconductor Product Specification Silicon NPN Po

See also transistors datasheet: 2N344 , 2N3440 , 2N3440CSM4 , 2N3440L , 2N3440S , 2N3441 , 2N3441X , 2N3441Y , 2N60C , 2N3443 , 2N3444 , 2N3444S , 2N3445 , 2N3446 , 2N3447 , 2N3448 , 2N3449 .

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