2N3451 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N3451

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.3

Maximum collector-base voltage |Ucb|, V: 6

Maximum collector-emitter voltage |Uce|, V: 6

Maximum emitter-base voltage |Ueb|, V: 4

Maximum collector current |Ic max|, A: 0.2

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 500

Collector capacitance (Cc), pF: 5.5

Forward current transfer ratio (hFE), min: 30

Noise Figure, dB: -

Package of 2N3451 transistor: TO5

2N3451 Equivalent Transistors - Cross-Reference Search

2N3451 PDF document for downloads:

1.1. 2n3498_2n3499_2n3450_2n3451.pdf Size:69K _microsemi

TECHNICAL DATA NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/366 Devices Qualified Level JAN 2N3498 2N3499 2N3500 2N3501 JANTX 2N3498L 2N3499L 2N3500L 2N3501L JANTXV JANS MAXIMUM RATINGS 2N3498* 2N3500* Ratings Symbol 2N3499* 2N3501* Unit Collector-Emitter Voltage 100 150 Vdc VCEO Collector-Base Voltage 100 150 Vdc VCBO Emitter-Base Voltage 6.0 6.0 Vdc VEBO TO-5* Collector Current 500 300 mAdc IC 2N3498L, 2N3499L Total Power Dissipation @ T = 250C (1) 1.0 W A PT 2N3500L, 2N3501L @ T = 250C (2) 5.0 W C 0 Operating & Storage Junction Temp. Range -55 to +200 C TJ, Tstg THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit Thermal Resistance: Junction-to-Case 35 R?JC 0 C/W TO-39* (TO-205AD) Junction-to-Ambient 175 R?JA 2N3498, 2N3499 *Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices 2N3500, 2N3501 1) Derate linearly 5.71 W/0C for T > 250C A 2) D

See also transistors datasheet: 2N3445 , 2N3446 , 2N3447 , 2N3448 , 2N3449 , 2N345 , 2N34-5 , 2N3450 , BD699 , 2N346 , 2N3461 , 2N3462 , 2N3463 , 2N3464 , 2N3467 , 2N3467S , 2N3468 .

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