2N3464 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N3464

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 5

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 40

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 5

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 30

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 35

Noise Figure, dB: -

Package of 2N3464 transistor: TO5

2N3464 Equivalent Transistors - Cross-Reference Search

2N3464 PDF document for downloads:

5.1. 2n3467.pdf Size:52K _semicoa

Data Sheet No. 2N3467 Generic Part Number: Type 2N3467 2N3467 Geometry 6706 Polarity PNP REF: MIL-PRF-19500/348 Qual Level: JAN - JANTXV Features: • General-purpose transistor for switching and amplifier applica- tons. • Housed in a TO-39 case. • Also available in chip form using the 6706 chip geometry. • The Min and Max limits shown are per MIL-PRF-19500/348 which Semicoa meets in all cases. TO-39 Maximum Ratings TC = 25oC unless otherwise specified Rating Symbol Rating Unit Collector-Emitter Voltage VCEO 40 V Collector-Base Voltage VCBO 40 V Emitter-Base Voltage VEBO 5.0 V Collector Current, Continuous IC 1.0 mA o C Operating Junction Temperature TJ -55 to +175 o C Storage Temperature TSTG -55 to +175 Data Sheet No. 2N3467 Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Symbol Min Max Unit Collector-Base Breakdown Voltage V(BR)CBO 40 --- V IC = 10 µA Collector-Emitter Breakdown Voltage V(BR)CEO 40 --- V IC

5.2. 2n3468.pdf Size:79K _semicoa

Data Sheet No. 2N3468 Generic Part Number: Type 2N3468 2N3468 Geometry 6706 Polarity PNP REF: MIL-PRF-19500/348 Qual Level: JAN - JANTXV Features: • General-purpose transistor for switching and amplifier applica- tons. • Housed in a TO-39 case. • Also available in chip form using the 6706 chip geometry. • The Min and Max limits shown are per MIL-PRF-19500/348 which Semicoa meets in all cases. TO-39 Maximum Ratings TC = 25oC unless otherwise specified Rating Symbol Rating Unit Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 50 V Emitter-Base Voltage VEBO 5.0 V Collector Current, Continuous IC 1.0 mA o C Operating Junction Temperature TJ -55 to +175 o C Storage Temperature TSTG -55 to +175 Data Sheet No. 2N3468 Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Symbol Min Max Unit Collector-Base Breakdown Voltage V(BR)CBO 50 --- V IC = 10 µA Collector-Emitter Breakdown Voltage V(BR)CEO 50 --- V I

See also transistors datasheet: 2N345 , 2N34-5 , 2N3450 , 2N3451 , 2N346 , 2N3461 , 2N3462 , 2N3463 , P605 , 2N3467 , 2N3467S , 2N3468 , 2N3468S , 2N3469 , 2N347 , 2N3470 , 2N3471 .

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