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D44H11
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D44H11
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List
100DA025D .. 2N100
2N1000 .. 2N119
2N1190 .. 2N1412A
2N1413 .. 2N1655
2N1656 .. 2N1990R
2N1990S .. 2N2221A
2N2221ACSM .. 2N2484ACSM
2N2484ADCSM .. 2N2773
2N2774 .. 2N2970
2N2971 .. 2N3241A
2N3242 .. 2N3506
2N3506L .. 2N3791SM
2N3792 .. 2N4057
2N4058 .. 2N457A
2N457B .. 2N5101
2N5102 .. 2N5356
2N5357 .. 2N5704
2N5705 .. 2N6022
2N6024 .. 2N634A
2N635 .. 2N6655-2
2N6655A .. 2N819
2N82 .. 2S120
2S121 .. 2SA1079
2SA108 .. 2SA1282
2SA1282A .. 2SA1408R
2SA1409 .. 2SA1577W
2SA1578 .. 2SA183
2SA1830 .. 2SA249
2SA25 .. 2SA496Y
2SA497 .. 2SA725
2SA726 .. 2SA927
2SA928 .. 2SB1102
2SB1103 .. 2SB1261
2SB1261-Z .. 2SB1555B
2SB1555C .. 2SB311
2SB312 .. 2SB511F
2SB512 .. 2SB696K
2SB697 .. 2SB858C
2SB858D .. 2SC1044
2SC1045 .. 2SC1253
2SC1254 .. 2SC1469A
2SC146A .. 2SC169
2SC1698 .. 2SC1924
2SC1925 .. 2SC2196
2SC2197 .. 2SC24
2SC240 .. 2SC2630
2SC2631 .. 2SC2821
2SC2821E .. 2SC306
2SC3060 .. 2SC3262
2SC3263 .. 2SC3443
2SC3444 .. 2SC3617
2SC3618 .. 2SC3780C
2SC3780D .. 2SC3981
2SC3982 .. 2SC4163L
2SC4163M .. 2SC4422
2SC4423 .. 2SC4725
2SC4726 .. 2SC5031N
2SC5031O .. 2SC5323
2SC5324 .. 2SC569
2SC5690 .. 2SC647P
2SC648 .. 2SC847
2SC848 .. 2SD1020G
2SD1020O .. 2SD1218
2SD1219 .. 2SD1402O
2SD1403 .. 2SD1618E
2SD1618S .. 2SD1803
2SD1803Q .. 2SD2017
2SD2018 .. 2SD2342B
2SD2342C .. 2SD313E
2SD313F .. 2SD532
2SD533 .. 2SD732
2SD732K .. 2SD931
2SD932 .. 3DD5024P
3DD5032 .. 40412V2
40413 .. 9013F
9013G .. AC180KL
AC180L .. AD462
AD463 .. AM1011-075
AM1011-300 .. BC107CSM
BC107P .. BC206C
BC207 .. BC307C
BC307VI .. BC418VI
BC419 .. BC558A
BC558AP .. BC848CW
BC848CWT1 .. BCP628C
BCP669A .. BCW66KG
BCW66KH .. BCX78-10
BCX78-7 .. BD149
BD149-10 .. BD281
BD282 .. BD515
BD515-1 .. BD814A
BD815 .. BDT60AF
BDT60B .. BDX37
BDX40 .. BF118
BF119 .. BF345
BF355 .. BF642
BF642P .. BFN23R
BFN24 .. BFR81
BFR81TO5 .. BFV10
BFV11 .. BFX79
BFX80 .. BLW46
BLW47 .. BSP52
BSP52T1 .. BSW21
BSW21A .. BT2604
BT2604T .. BTN2222AL3
BTN2222AN3 .. BU526A-7
BU526A-8 .. BUL704
BUL705 .. BUV46
BUV46A .. BUX82-5
BUX82-6 .. C9083
C9084 .. CENU52
CENU55 .. CJD340
CJD3439 .. CMPTA13
CMPTA14 .. CS9015A
CS9015B .. CSC1008
CSC1008G .. CSD1563AP
CSD1563AQ .. D10-28B
D100 .. D39C3
D39C4 .. D44VM5
D44VM6 .. DH3724CN
DH3725CD .. DTA123EE
DTA123EEA .. DTC143TEA
DTC143TKA .. DXTP03200BP5
DXTP19020DP5 .. ECG344
ECG345 .. ES3126
ESM1000 .. FA1L3N
FA1L4L .. FJPF13009
FJPF3305 .. FMMT5088
FMMT5089 .. FT317A
FT317B .. GA53104
GA53149 .. GES4123
GES4124 .. GFT34-15
GFT34-30 .. GT2765
GT2766 .. HA7507
HA7510 .. HMBT2222A
HMBT2369 .. HUN2115
HUN2116 .. JA101P
JA101Q .. KD338
KD3442 .. KRA557F
KRA557U .. KRC416
KRC416E .. KSA1241O
KSA1241Y .. KSC2223Y
KSC2233 .. KSC945L
KSC945O .. KSP25
KSP26 .. KT3128B-1
KT3128B1 .. KT501V
KT502A .. KT808A
KT808A3 .. KT837A
KT837A1-IM .. KT997B
KT999A .. KTC3883
KTC3911 .. L8550HQLT1G
L8550HRLT1G .. MA8001
MA8002 .. MHQ2221
MHQ2222 .. MJD117L
MJD117T4 .. MJE488
MJE49 .. MM4429
MM4430 .. MMBT5127
MMBT5128 .. MMUN2214L
MMUN2215 .. MP4051
MP4052 .. MPQ5857
MPQ5858 .. MPS918R
MPS929 .. MRF449
MRF450 .. NA01EH
NA01EI .. NB011FV
NB011FY .. NB123H
NB123HH .. NB323Y
NB323Z .. NPS3707
NPS3708 .. NSS35200CF8T1G
NSS35200MR6T1G .. OC450
OC450K .. PBSS304NX
PBSS304NZ .. PEMB10
PEMB11 .. PN3906
PN3906R .. PZT5401
PZT5551 .. RN1116MFV
RN1117 .. RN2302
RN2303 .. RS7241
RS7406 .. SCE308
SCE309 .. SFT288
SFT298 .. SPS6012
SPS8050 .. ST2SB772U
ST2SB9435U .. STX83003
STX93003 .. T1973
T1992 .. TEC9013G
TEC9013H .. TIP50J3
TIP51 .. TK35
TK35C .. TP2712
TP2713 .. TTC003
TTC004 .. UN4111
UN4112 .. WT5501-05
WT5601-06 .. ZTX214C
ZTX214CK .. ZTX955
ZTX956 .. ZXTPS720MC
 
D44H11 All Transistors Datasheet. Power MOSFET, IGBT, IC, Triacs Database. Semiconductor Catalog
 

D44H11 Transistor Datasheet. Parameters and Characteristics.

Type Designator: D44H11

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 50

Maximum collector-base voltage |Ucb|, V: 90

Maximum collector-emitter voltage |Uce|, V: 90

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 10

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 25

Collector capacitance (Cc), pF: 180

Forward current transfer ratio (hFE), min: 35

Noise Figure, dB: -

Package of D44H11 transistor: TO220

D44H11 Equivalent Transistors - Cross-Reference Search

D44H11 PDF doc:

1.1. mjd44h11_mjd45h11.pdf Size:192K _motorola

D44H11
D44H11
Order this document MOTOROLA by MJD44H11/D SEMICONDUCTOR TECHNICAL DATA NPN * MJD44H11 Complementary Power PNP MJD45H11 * Transistors DPAK For Surface Mount Applications *Motorola Preferred Device . . . for general purpose power and switching such as output or driver stages in SILICON applications such as switching regulators, converters, and power amplifiers. POWER TRANSISTORS Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) 8 AMPERES Straight Lead Version in Plastic Sleeves (1 Suffix) 80 VOLTS Lead Formed Version in 16 mm Tape and Reel for Surface Mount (T4 Suffix) 20 WATTS Electrically Similar to Popular D44H/D45H Series Low Collector Emitter Saturation Voltage VCE(sat) = 1.0 Volt Max @ 8.0 Amperes Fast Switching Speeds Complementary Pairs Simplifies Designs IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIII IIIIIIIIIIIII IIIIII IIII

1.2. d45h11_d44h11.pdf Size:103K _motorola

D44H11
D44H11
Order this document MOTOROLA by D44H/D SEMICONDUCTOR TECHNICAL DATA NPN D44H Series * Complementary Silicon Power PNP D45H Series * Transistors . . . for general purpose power amplification and switching such as output or driver *Motorola Preferred Device stages in applications such as switching regulators, converters and power amplifiers. Low CollectorEmitter Saturation Voltage 10 AMPERE VCE(sat) = 1.0 V (Max) @ 8.0 A COMPLEMENTARY Fast Switching Speeds SILICON IIIIIIIIIIIIIIIIIIIIIII Complementary Pairs Simplifies Designs POWER TRANSISTORS 60, 80 VOLTS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIII III III MAXIMUM RATINGS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIII IIIIIIIIIIII IIIII III III III III IIII D44H or D45H IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIII IIIIIIIIIIII IIIII III IIIIIIIIIIII IIIII III III III III IIII III IIII Rating Symbol Unit Rating Symbol 8 10, 11 Unit IIIIIIIIIIII IIIIIIII IIIIIIIIII

1.3. d44h8_d44h11_d45h8_d45h11.pdf Size:182K _st

D44H11
D44H11
D44H8 - D44H11 D45H8 - D45H11 Complementary power transistors . Features Low collector-emitter saturation voltage TAB Fast switching speed Applications Power amplifier 3 2 Switching circuits 1 TO-220 Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for Figure 1. Internal schematic diagram general purpose linear and switching applications. Table 1. Device summary Order codes Marking Polarity Package Packaging D44H8 D44H8 NPN TO-220 Tube D44H11 D44H11 NPN TO-220 Tube D45H8 D45H8 PNP TO-220 Tube D45H11 D45H11 PNP TO-220 Tube October 2009 Doc ID 4213 Rev 5 1/8 www.st.com 8 Absolute maximum ratings D44H8, D44H11, D45H8, D45H11 1 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit Collector-emitter voltage (IB = 0) D44H8 - D45H8 60 V VCEO Collector-emitter voltage (IB = 0) D44H11 - D45H11 80 V VEBO Emitter-base voltage (IC = 0) 5 V IC Collector curren

1.4. d44h8_d44h11.pdf Size:62K _st

D44H11
D44H11
D44H8 D44H11 NPN SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES LOW COLLECTOR-EMITTER SATURATION VOLTAGE FAST SWITCHING SPEED APPLICATIONS GENERAL PURPOSE SWITCHING GENERAL PURPOSE AMPLIFIER 3 2 DESCRIPTION 1 The D44H8, and D44H11 are silicon multiepitaxial planar NPN transistors mounted in TO-220 Jedec TO-220 plastic package. They are inteded for various switching and general purpose applications. D44H8, D44H11 are complementary with D45H8, D45H11. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit D44H8 D44H11 VCEO Collector-Emitter Voltage (IB = 0) 60 80 V V Emitter-Base Voltage (I = 0) 5 V EBO C IC Collector Current 10 A I Collector Peak Current 20 A CM o P Total Dissipation at T ? 25 C50 W tot c o Tstg Storage Temperature -65 to 150 C o T Max. Operating Junction Temperature 150 C j 1/5 June 1997 D44H8/D44H11 THERMAL DATA o Rthj-case Thermal Resistance Junction-case Max 2.5 C/W o ELECTRIC

1.5. mjd44h11_mjd45h11.pdf Size:211K _st

D44H11
D44H11
MJD44H11 MJD45H11 Complementary power transistors . Features Low collector-emitter saturation voltage Fast switching speed TAB2 Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") 3 1 Applications Power amplifier DPAK TO-252 Switching circuits Description Figure 1. Internal schematic diagram The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose linear and switching applications. Table 1. Device summary Order codes Marking Polarity Package Packaging MJD44H11T4 MJD44H11 NPN DPAK Tape and reel MJD45H11T4 MJD45H11 PNP DPAK Tape and reel August 2009 Doc ID 5470 Rev 3 1/8 www.st.com 8 Absolute maximum ratings MJD44H11, MJD45H11 1 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCEO Collector-emitter voltage (IB = 0) 80 V VEBO Emitter-base voltage (IC = 0) 5 V IC Collector current 8 A ICM Collector peak current 16 A PT

1.6. d44h11fp_d45h11fp.pdf Size:174K _st

D44H11
D44H11
D44H11FP D45H11FP Complementary power transistors . Features Low collector-emitter saturation voltage Fast switching speed Applications Power amplifier 3 2 1 Switching circuits TO-220FP Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for Figure 1. Internal schematic diagram general purpose linear and switching applications. Table 1. Device summary Order codes Marking Polarity Package Packaging D44H11FP D44H11FP NPN TO-220FP Tube D45H11FP D45H11FP PNP TO-220FP Tube October 2009 Doc ID 16096 Rev 2 1/8 www.st.com 8 Absolute maximum ratings D44H11FP, D45H11FP 1 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCEO Collector-emitter voltage (IB = 0) 80 V VEBO Emitter-base voltage (IC = 0) 5 V IC Collector current 10 A ICM Collector peak current 20 A PTOT Total dissipation at Tcase = 25 C 36 W TSTG Storage temperature -55 to 150 C TJ Max. operatin

1.7. mjd44h11.pdf Size:113K _fairchild_semi

D44H11
D44H11
March 2009 MJD44H11 NPN Epitaxial Silicon Transistor General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications Load Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, "- I" Suffix) Electrically Similar to Popular MJE44H Fast Switching Speeds Low Collector Emitter Saturation Voltage D-PAK I-PAK 11 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 8 A ICP Collector-Current (Pulse) 16 A TJ Junction Temperature 150 C TSTG Storage Temperature - 65 ~ 150 C Thermal Characteristics Ta = 25C unless otherwise noted Symbol Parameter Max. Units Tc = 25C 20 Total Device Dissipation PD W Ta = 25C 1.75 R?JC Thermal Resistance, Junction to Case 6.25 C/W R?JA Thermal Resistance, Junction to Ambient 71.4 C/W

1.8. d44h8_nzt44h8_d44h11.pdf Size:550K _fairchild_semi

D44H11
D44H11
February 2010 D44H8 / NZT44H8 / D44H11 NPN Power Amplifier Features This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from process 4Q. C E C B B C E TO-220 SOT-223 D44H8 / D44H11 NZT44H8 Absolute Maximum Ratings* TA=25C unless otherwise noted Value Symbol Parameter Units D44H8 D44H11 NZT44H8 VCEO Collector-Emitter Voltage 60 80 V IC Collector Current - Continuous 8.0 10.0 A TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA=25C unless otherwise noted Max. Symbol Parameter Units D44H8 *NZT44H8 D44H11 PD Total Device Dissipat

1.9. d44h11.pdf Size:241K _fairchild_semi

D44H11
D44H11
March 2009 D44H11TU NPN Epitaxial Silicon Transistor Low Collector-Emitter Saturation Voltage : VCE(sat) = 1V (Max.) @ 8A Fast Switching Speeds Complement to KSE45H TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 10 A ICP Collector-Current (Pulse) 20 A PC Collector Dissipation (TC=25C) 50 W Collector Dissipation (Ta=25C) 1.67 W TJ Junction Temperature 150 C TSTG Storage Temperature - 55 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 80 V BVEBO Emitter-Base Breakdown Voltage IE = 500?A, IC= 0 5 V ICES Collector Cut-off Current VCE = Rated VCEO, VEB = 0 10 ?A IEBO Emitter Cut-off Current VEB = 5V, IC = 0 100 ?A hFE DC Current Gain VCE = 1V, IC = 2A 60

1.10. mjd44h11_mjd45h11.pdf Size:108K _onsemi

D44H11
D44H11
MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, SILICON and power amplifiers. POWER TRANSISTORS Features 8 AMPERES Lead Formed for Surface Mount Application in Plastic Sleeves 80 VOLTS, 20 WATTS (No Suffix) Straight Lead Version in Plastic Sleeves (-1 Suffix) MARKING Electrically Similar to Popular D44H/D45H Series DIAGRAMS Low Collector Emitter Saturation Voltage - 4 AYWW VCE(sat) = 1.0 Volt Max @ 8.0 Amperes J4 Fast Switching Speeds 2 xH11G 1 Complementary Pairs Simplifies Designs 3 DPAK CASE 369C Epoxy Meets UL 94 V-0 @ 0.125 in STYLE 1 ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V 4 These are Pb-Free Packages AYWW MAXIMUM RATINGS J4 Rating Symbol Max Unit xH11G 1 Collector-Emitter Voltage VCEO

1.11. d44h11e3.pdf Size:137K _cystek

D44H11
D44H11
Spec. No. : C606E3-A Issued Date : 2005.01.03 CYStech Electronics Corp. Revised Date :2007.11.01 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor D44H11E3 Features • Low VCE(sat) • High BVCEO • Excellent current gain characteristics • RoHS compliant package Symbol Outline D44H11E3 TO-220AB B:Base C:Collector E:Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 6 V Collector Current (DC) IC 10 A Collector Current (Pulse) ICP 20 (Note 1) Power Dissipation @ TA=25℃ PD 2 W Power Dissipation @ TC=25℃ PD 50 RθJA Thermal Resistance, Junction to Ambient 62.5 °C/W RθJC Thermal Resistance, Junction to Case 2.5 °C/W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C ≦ ≦ Note : 1. Single Pulse , Pw 380μs,Duty 2%. D44H11E3 CYStek Product Specification

1.12. d44h11fp.pdf Size:267K _cystek

D44H11
D44H11
Spec. No. : C606FP Issued Date : 2005.03.29 CYStech Electronics Corp. Revised Date : 2011.12.06 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor D44H11FP Features • Low VCE(sat) • High BVCEO • Excellent current gain characteristics • Pb-free lead plating package Symbol Outline D44H11FP TO-220FP B:Base C:Collector E:Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 6 V Collector Current (DC) IC 10 A Collector Current (Pulse) ICP 20 (Note 1) Power Dissipation @ TA=25℃ PD 2 W Power Dissipation @ TC=25℃ PD 50 Thermal Resistance, Junction to Ambient RθJA 62.5 °C/W Thermal Resistance, Junction to Case RθJC 2.5 °C/W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C ≦ ≦ Note : 1. Single Pulse , Pw 380μs,Duty 2%. D44H11FP CYStek Product Specification

1.13. d44h11j3.pdf Size:298K _cystek

D44H11
D44H11
Spec. No. : C606J3-A Issued Date : 2005.08.15 CYStech Electronics Corp. Revised Date :2010.12.08 Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 80V IC 8A D44H11J3 RCESAT 60mΩ Features • Low VCE(sat) • High BVCEO • Excellent current gain characteristics • RoHS compliant package Symbol Outline D44H11J3 TO-252(DPAK) B:Base B C E C:Collector E:Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 6 V Collector Current (DC) IC 8 A Collector Current (Pulse) ICP 16 (Note 1) Power Dissipation @ TA=25℃ PD 1.75 (Note 2) W Power Dissipation @ TC=25℃ PD 20 Thermal Resistance, Junction to Ambient RθJA 71.4 (Note 2) °C/W Thermal Resistance, Junction to Case RθJC 6.25 °C/W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C ≦ ≦ Note : 1. Single Pulse , Pw 380

See also transistors datasheet: D44D4 , D44D5 , D44D6 , D44E1 , D44E2 , D44E3 , D44H1 , D44H10 , 9012 , D44H2 , D44H3 , D44H4 , D44H5 , D44H6 , D44H7 , D44H8 , D44H9 .

Keywords

 D44H11 Datasheet  D44H11 Design D44H11 MOSFET D44H11 Power
 D44H11 RoHS Compliant D44H11 Service D44H11 Triacs D44H11 Semiconductor
 D44H11 Database D44H11 Innovation D44H11 IC D44H11 Electricity

 

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