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D44H11
  D44H11
  D44H11
 
D44H11
  D44H11
  D44H11
 
D44H11
  D44H11
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU214
BU215 .. BUF410AI
BUF410FI .. BUS22BF
BUS22C .. BUW81A
BUW84 .. BUY83
BUY84 .. CD9013J
CD9014 .. CIL157
CIL157A .. CL166A
CL166B .. CPS2540B
CPS2545B .. CSA968
CSA968A .. CSC2688BPL
CSC2688G .. CTP1108
CTP1109 .. D29J6
D29J7 .. D42CU5
D42CU6 .. D64VP4
D64VP5 .. DT400-300
DT400-400 .. DTC015EM
DTC015EUB .. DTL3501
DTL3502 .. ECG2332
ECG2334 .. ED1602C
ED1602D .. ET206
ET359 .. FE4021
FE4022 .. FMG12
FMG13 .. FPC644
FPC828 .. FXT555SM
FXT557 .. GE55821
GE56551 .. GET3
GET3013 .. GSDS50018
GSDS50020 .. GT43
GT44 .. HEPS3060
HEPS3061 .. HSE149
HSE150 .. IR1000
IR1001 .. K2110A
K2110B .. KRA223M
KRA223S .. KRC120M
KRC120S .. KRC881T
KRC882T .. KSB798
KSB810 .. KSC5022-Y
KSC5023 .. KSE171
KSE172 .. KT215D9
KT215E9 .. KT351B
KT352A .. KT657B-2
KT657V-2 .. KT8183B
KT8183B-1 .. KT920B
KT920G .. KTC3194
KTC3195 .. KTX511T
KTX512T .. MD1T3251
MD2001FX .. MJ15018
MJ15019 .. MJE13006
MJE13007 .. MJF6688
MJH10012 .. MMBT200A
MMBT2131 .. MMBTA70L
MMBTA70LT1 .. MP1555A
MP1556 .. MP8133
MP8134 .. MPS3906
MPS3906R .. MQ1613R
MQ1711 .. MT3S19
MT3S19R .. NA22FG
NA22FH .. NB021HZ
NB022E .. NB221EH
NB221EI .. NKT270
NKT271 .. NR431FR
NR431FS .. NTE2554
NTE2555 .. P2N2222A
P2N2369 .. PDTA123EE
PDTA123EM .. PMD19K100
PMD19K200 .. PTB20071
PTB20074 .. RCA9201
RCA9201A .. RN1911FE
RN1911FS .. RN2965FE
RN2965FS .. S790T
S791T .. SF016
SF018 .. SMBT2369
SMBT2369A .. SRC1210EF
SRC1210M .. STL128DN
STL72 .. T1447
T1472 .. TD13005
TD13005-SMD .. TIP34BF
TIP34C .. TIX813
TIX814 .. TN5857
TN5858 .. TRF453A
TRF455 .. UN2117R
UN2117S .. UPT523
UPT524 .. ZTX108L
ZTX108M .. ZTX602
ZTX603 .. ZXTPS720MC
 
D44H11 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

D44H11 Transistor Datasheet. Parameters and Characteristics.

Type Designator: D44H11

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 50

Maximum collector-base voltage |Ucb|, V: 90

Maximum collector-emitter voltage |Uce|, V: 90

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 10

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 25

Collector capacitance (Cc), pF: 180

Forward current transfer ratio (hFE), min: 35

Noise Figure, dB: -

Package of D44H11 transistor: TO220

D44H11 Equivalent Transistors - Cross-Reference Search

D44H11 PDF doc:

1.1. mjd44h11_mjd45h11.pdf Size:192K _motorola

D44H11
D44H11
Order this document MOTOROLA by MJD44H11/D SEMICONDUCTOR TECHNICAL DATA NPN * MJD44H11 Complementary Power PNP MJD45H11 * Transistors DPAK For Surface Mount Applications *Motorola Preferred Device . . . for general purpose power and switching such as output or driver stages in SILICON applications such as switching regulators, converters, and power amplifiers. POWER TRANSISTORS Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) 8 AMPERES Straight Lead Version in Plastic Sleeves (1 Suffix) 80 VOLTS Lead Formed Version in 16 mm Tape and Reel for Surface Mount (T4 Suffix) 20 WATTS Electrically Similar to Popular D44H/D45H Series Low Collector Emitter Saturation Voltage VCE(sat) = 1.0 Volt Max @ 8.0 Amperes Fast Switching Speeds Complementary Pairs Simplifies Designs IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIII IIIIIIIIIIIII IIIIII IIII

1.2. d45h11_d44h11.pdf Size:103K _motorola

D44H11
D44H11
Order this document MOTOROLA by D44H/D SEMICONDUCTOR TECHNICAL DATA NPN D44H Series * Complementary Silicon Power PNP D45H Series * Transistors . . . for general purpose power amplification and switching such as output or driver *Motorola Preferred Device stages in applications such as switching regulators, converters and power amplifiers. Low CollectorEmitter Saturation Voltage 10 AMPERE VCE(sat) = 1.0 V (Max) @ 8.0 A COMPLEMENTARY Fast Switching Speeds SILICON IIIIIIIIIIIIIIIIIIIIIII Complementary Pairs Simplifies Designs POWER TRANSISTORS 60, 80 VOLTS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIII III III MAXIMUM RATINGS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIII IIIIIIIIIIII IIIII III III III III IIII D44H or D45H IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIII IIIIIIIIIIII IIIII III IIIIIIIIIIII IIIII III III III III IIII III IIII Rating Symbol Unit Rating Symbol 8 10, 11 Unit IIIIIIIIIIII IIIIIIII IIIIIIIIII

1.3. d44h8_d44h11_d45h8_d45h11.pdf Size:182K _st

D44H11
D44H11
D44H8 - D44H11 D45H8 - D45H11 Complementary power transistors . Features Low collector-emitter saturation voltage TAB Fast switching speed Applications Power amplifier 3 2 Switching circuits 1 TO-220 Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for Figure 1. Internal schematic diagram general purpose linear and switching applications. Table 1. Device summary Order codes Marking Polarity Package Packaging D44H8 D44H8 NPN TO-220 Tube D44H11 D44H11 NPN TO-220 Tube D45H8 D45H8 PNP TO-220 Tube D45H11 D45H11 PNP TO-220 Tube October 2009 Doc ID 4213 Rev 5 1/8 www.st.com 8 Absolute maximum ratings D44H8, D44H11, D45H8, D45H11 1 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit Collector-emitter voltage (IB = 0) D44H8 - D45H8 60 V VCEO Collector-emitter voltage (IB = 0) D44H11 - D45H11 80 V VEBO Emitter-base voltage (IC = 0) 5 V IC Collector curren

1.4. d44h11fp_d45h11fp.pdf Size:174K _st

D44H11
D44H11
D44H11FP D45H11FP Complementary power transistors . Features Low collector-emitter saturation voltage Fast switching speed Applications Power amplifier 3 2 1 Switching circuits TO-220FP Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for Figure 1. Internal schematic diagram general purpose linear and switching applications. Table 1. Device summary Order codes Marking Polarity Package Packaging D44H11FP D44H11FP NPN TO-220FP Tube D45H11FP D45H11FP PNP TO-220FP Tube October 2009 Doc ID 16096 Rev 2 1/8 www.st.com 8 Absolute maximum ratings D44H11FP, D45H11FP 1 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCEO Collector-emitter voltage (IB = 0) 80 V VEBO Emitter-base voltage (IC = 0) 5 V IC Collector current 10 A ICM Collector peak current 20 A PTOT Total dissipation at Tcase = 25 C 36 W TSTG Storage temperature -55 to 150 C TJ Max. operatin

1.5. mjd44h11_mjd45h11.pdf Size:211K _st

D44H11
D44H11
MJD44H11 MJD45H11 Complementary power transistors . Features Low collector-emitter saturation voltage Fast switching speed TAB2 Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") 3 1 Applications Power amplifier DPAK TO-252 Switching circuits Description Figure 1. Internal schematic diagram The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose linear and switching applications. Table 1. Device summary Order codes Marking Polarity Package Packaging MJD44H11T4 MJD44H11 NPN DPAK Tape and reel MJD45H11T4 MJD45H11 PNP DPAK Tape and reel August 2009 Doc ID 5470 Rev 3 1/8 www.st.com 8 Absolute maximum ratings MJD44H11, MJD45H11 1 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCEO Collector-emitter voltage (IB = 0) 80 V VEBO Emitter-base voltage (IC = 0) 5 V IC Collector current 8 A ICM Collector peak current 16 A PT

1.6. d44h8_d44h11.pdf Size:62K _st

D44H11
D44H11
D44H8 D44H11 NPN SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES LOW COLLECTOR-EMITTER SATURATION VOLTAGE FAST SWITCHING SPEED APPLICATIONS GENERAL PURPOSE SWITCHING GENERAL PURPOSE AMPLIFIER 3 2 DESCRIPTION 1 The D44H8, and D44H11 are silicon multiepitaxial planar NPN transistors mounted in TO-220 Jedec TO-220 plastic package. They are inteded for various switching and general purpose applications. D44H8, D44H11 are complementary with D45H8, D45H11. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit D44H8 D44H11 VCEO Collector-Emitter Voltage (IB = 0) 60 80 V V Emitter-Base Voltage (I = 0) 5 V EBO C IC Collector Current 10 A I Collector Peak Current 20 A CM o P Total Dissipation at T ? 25 C50 W tot c o Tstg Storage Temperature -65 to 150 C o T Max. Operating Junction Temperature 150 C j 1/5 June 1997 D44H8/D44H11 THERMAL DATA o Rthj-case Thermal Resistance Junction-case Max 2.5 C/W o ELECTRIC

1.7. d44h11.pdf Size:241K _fairchild_semi

D44H11
D44H11
March 2009 D44H11TU NPN Epitaxial Silicon Transistor Low Collector-Emitter Saturation Voltage : VCE(sat) = 1V (Max.) @ 8A Fast Switching Speeds Complement to KSE45H TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 10 A ICP Collector-Current (Pulse) 20 A PC Collector Dissipation (TC=25C) 50 W Collector Dissipation (Ta=25C) 1.67 W TJ Junction Temperature 150 C TSTG Storage Temperature - 55 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 80 V BVEBO Emitter-Base Breakdown Voltage IE = 500?A, IC= 0 5 V ICES Collector Cut-off Current VCE = Rated VCEO, VEB = 0 10 ?A IEBO Emitter Cut-off Current VEB = 5V, IC = 0 100 ?A hFE DC Current Gain VCE = 1V, IC = 2A 60

1.8. mjd44h11.pdf Size:113K _fairchild_semi

D44H11
D44H11
March 2009 MJD44H11 NPN Epitaxial Silicon Transistor General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications Load Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, "- I" Suffix) Electrically Similar to Popular MJE44H Fast Switching Speeds Low Collector Emitter Saturation Voltage D-PAK I-PAK 11 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 8 A ICP Collector-Current (Pulse) 16 A TJ Junction Temperature 150 C TSTG Storage Temperature - 65 ~ 150 C Thermal Characteristics Ta = 25C unless otherwise noted Symbol Parameter Max. Units Tc = 25C 20 Total Device Dissipation PD W Ta = 25C 1.75 R?JC Thermal Resistance, Junction to Case 6.25 C/W R?JA Thermal Resistance, Junction to Ambient 71.4 C/W

1.9. d44h8_nzt44h8_d44h11.pdf Size:550K _fairchild_semi

D44H11
D44H11
February 2010 D44H8 / NZT44H8 / D44H11 NPN Power Amplifier Features This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from process 4Q. C E C B B C E TO-220 SOT-223 D44H8 / D44H11 NZT44H8 Absolute Maximum Ratings* TA=25C unless otherwise noted Value Symbol Parameter Units D44H8 D44H11 NZT44H8 VCEO Collector-Emitter Voltage 60 80 V IC Collector Current - Continuous 8.0 10.0 A TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA=25C unless otherwise noted Max. Symbol Parameter Units D44H8 *NZT44H8 D44H11 PD Total Device Dissipat

1.10. mjd44h11_mjd45h11.pdf Size:108K _onsemi

D44H11
D44H11
MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, SILICON and power amplifiers. POWER TRANSISTORS Features 8 AMPERES Lead Formed for Surface Mount Application in Plastic Sleeves 80 VOLTS, 20 WATTS (No Suffix) Straight Lead Version in Plastic Sleeves (-1 Suffix) MARKING Electrically Similar to Popular D44H/D45H Series DIAGRAMS Low Collector Emitter Saturation Voltage - 4 AYWW VCE(sat) = 1.0 Volt Max @ 8.0 Amperes J4 Fast Switching Speeds 2 xH11G 1 Complementary Pairs Simplifies Designs 3 DPAK CASE 369C Epoxy Meets UL 94 V-0 @ 0.125 in STYLE 1 ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V 4 These are Pb-Free Packages AYWW MAXIMUM RATINGS J4 Rating Symbol Max Unit xH11G 1 Collector-Emitter Voltage VCEO

1.11. d44h11e3.pdf Size:137K _cystek

D44H11
D44H11
Spec. No. : C606E3-A Issued Date : 2005.01.03 CYStech Electronics Corp. Revised Date :2007.11.01 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor D44H11E3 Features • Low VCE(sat) • High BVCEO • Excellent current gain characteristics • RoHS compliant package Symbol Outline D44H11E3 TO-220AB B:Base C:Collector E:Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 6 V Collector Current (DC) IC 10 A Collector Current (Pulse) ICP 20 (Note 1) Power Dissipation @ TA=25℃ PD 2 W Power Dissipation @ TC=25℃ PD 50 RθJA Thermal Resistance, Junction to Ambient 62.5 °C/W RθJC Thermal Resistance, Junction to Case 2.5 °C/W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C ≦ ≦ Note : 1. Single Pulse , Pw 380μs,Duty 2%. D44H11E3 CYStek Product Specification

1.12. d44h11fp.pdf Size:267K _cystek

D44H11
D44H11
Spec. No. : C606FP Issued Date : 2005.03.29 CYStech Electronics Corp. Revised Date : 2011.12.06 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor D44H11FP Features • Low VCE(sat) • High BVCEO • Excellent current gain characteristics • Pb-free lead plating package Symbol Outline D44H11FP TO-220FP B:Base C:Collector E:Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 6 V Collector Current (DC) IC 10 A Collector Current (Pulse) ICP 20 (Note 1) Power Dissipation @ TA=25℃ PD 2 W Power Dissipation @ TC=25℃ PD 50 Thermal Resistance, Junction to Ambient RθJA 62.5 °C/W Thermal Resistance, Junction to Case RθJC 2.5 °C/W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C ≦ ≦ Note : 1. Single Pulse , Pw 380μs,Duty 2%. D44H11FP CYStek Product Specification

1.13. d44h11j3.pdf Size:298K _cystek

D44H11
D44H11
Spec. No. : C606J3-A Issued Date : 2005.08.15 CYStech Electronics Corp. Revised Date :2010.12.08 Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 80V IC 8A D44H11J3 RCESAT 60mΩ Features • Low VCE(sat) • High BVCEO • Excellent current gain characteristics • RoHS compliant package Symbol Outline D44H11J3 TO-252(DPAK) B:Base B C E C:Collector E:Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 6 V Collector Current (DC) IC 8 A Collector Current (Pulse) ICP 16 (Note 1) Power Dissipation @ TA=25℃ PD 1.75 (Note 2) W Power Dissipation @ TC=25℃ PD 20 Thermal Resistance, Junction to Ambient RθJA 71.4 (Note 2) °C/W Thermal Resistance, Junction to Case RθJC 6.25 °C/W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C ≦ ≦ Note : 1. Single Pulse , Pw 380

See also transistors datasheet: D44D4 , D44D5 , D44D6 , D44E1 , D44E2 , D44E3 , D44H1 , D44H10 , 9012 , D44H2 , D44H3 , D44H4 , D44H5 , D44H6 , D44H7 , D44H8 , D44H9 .

Keywords

 D44H11 Datasheet  D44H11 Datenblatt  D44H11 RoHS  D44H11 Distributor
 D44H11 Application Notes  D44H11 Component  D44H11 Circuit  D44H11 Schematic
 D44H11 Equivalent  D44H11 Cross Reference  D44H11 Data Sheet  D44H11 Fiche Technique

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