D44TD4 Transistor Datasheet. Parameters and Characteristics.

Type Designator: D44TD4

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 50

Maximum collector-base voltage |Ucb|, V: 500

Maximum collector-emitter voltage |Uce|, V: 350

Maximum emitter-base voltage |Ueb|, V: 7

Maximum collector current |Ic max|, A: 2

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 15

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 8

Noise Figure, dB: -

Package of D44TD4 transistor: TO220

D44TD4 Equivalent Transistors - Cross-Reference Search

D44TD4 PDF document for downloads:

5.1. d44td3_4_5.pdf Size:103K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors D44TD3/4/5 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min)- D44TD3 = 350V(Min)- D44TD4 = 400V(Min)- D44TD5 ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Designed for switching regulators, high resolution deflection circuits, inverters and motor drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT D44TD3 400 Collector-Emitter VCEV D44TD4 500 V Voltage D44TD5 600 D44TD3 300 VCEO Collector-Emitter D44TD4 350 V Voltage D44TD5 400 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8 A Collector Power Dissipation PC @ TC=25? 50 W TJ Junction Temperature 150 ? Storage Temperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 1.56 ?/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semi

See also transistors datasheet: D44T2 , D44T3 , D44T4 , D44T5 , D44T6 , D44T7 , D44T8 , D44TD3 , TIP142 , D44TD5 , D44TE3 , D44TE4 , D44TE5 , D44U1 , D44U2 , D44U3 , D44U4 .

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