D44VH2 Transistor Datasheet. Parameters and Characteristics.

Type Designator: D44VH2

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 75

Maximum collector-base voltage |Ucb|, V: 50

Maximum collector-emitter voltage |Uce|, V: 30

Maximum emitter-base voltage |Ueb|, V: 7

Maximum collector current |Ic max|, A: 15

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 25

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of D44VH2 transistor: TO220

D44VH2 Equivalent Transistors - Cross-Reference Search

D44VH2 PDF document for downloads:

5.1. d44vh_d45vh.pdf Size:92K _motorola

Order this document MOTOROLA by D44VH/D SEMICONDUCTOR TECHNICAL DATA NPN D44VH Complementary Silicon Power PNP D45VH Transistors These complementary silicon power transistors are designed for high–speed switching applications, such as switching regulators and high frequency inverters. The devices are also well–suited for drivers for high power switching circuits. 15 AMPERE • Fast Switching — tf = 90 ns (Max) COMPLEMENTARY • Key Parameters Specified @ 100_C SILICON • Low Collector–Emitter Saturation Voltage — POWER TRANSISTORS VCE(sat) = 1.0 V (Max) @ 8.0 A 80 VOLTS • Complementary Pairs Simplify Circuit Designs 83 WATTS CASE 221A–06 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII TO–220AB IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIII IIII MAXIMUM RATINGS IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIII IIII IIIIIII IIII Rating Symbol Value Unit IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII

5.2. d44vh10_d45vh10.pdf Size:84K _onsemi

D44VH10 (NPN), D45VH10 (PNP) Complementary Silicon Power Transistors These complementary silicon power transistors are designed for high-speed switching applications, such as switching regulators and http://onsemi.com high frequency inverters. The devices are also well-suited for drivers for high power switching circuits. 15 A Features COMPLEMENTARY SILICON • Fast Switching - POWER TRANSISTORS tf = 90 ns (Max) 80 V, 83 W • Key Parameters Specified @ 100°C • Low Collector-Emitter Saturation Voltage - MARKING VCE(sat) = 1.0 V (Max) @ 8.0 A DIAGRAM • Complementary Pairs Simplify Circuit Designs 4 • Pb-Free Packages are Available* MAXIMUM RATINGS IIIIIIIIIIIIIIIIIII STYLE 1: D4xVH10G Rating Symbol ValueIII PIN 1. BASE Unit IIIIIIIIIIIIIIIIIII IIIIIIIIIIII III IIII 2. COLLECTOR AYWW 3. EMITTER 1 Collector-Emitter Voltage VCEO 80 Vdc IIIIIIIIIIII III IIIIIIIIIIII III IIII III IIII III 2 4. COLLECTOR 3 Collector-Emitter Voltage VCEV 100 Vdc IIIII

5.3. d44vhserie.pdf Size:113K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors D44VH Series DESCRIPTION ·Low Saturation Voltage ·Fast Switching Speed ·Complement to Type D45VH Series APPLICATIONS ·Designed for high-speed switching applications, such as switching regulators and high frequency inverters. They are also well-suited for drivers for high power switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT D44VH 1 50 D44VH 4 70 VCEV Collector-Emitter V Voltage D44VH 7 80 D44VH 10 100 D44VH 1 30 D44VH 4 45 VCEO Collector-Emitter V Voltage D44VH 7 60 D44VH 10 80 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 20 A Collector Power Dissipation PC @TC=25? 83 W Tj Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 1.5 ?/W Rth j-c Thermal Resist

5.4. d44vhseries.pdf Size:163K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors D44VH Series DESCRIPTION ·Low Saturation Voltage ·Fast Switching Speed ·Complement to Type D45VH Series APPLICATIONS ·Designed for high-speed switching applications, such as switching regulators and high frequency inverters. They are also well-suited for drivers for high power switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT D44VH 1 50 D44VH 4 70 VCEV Collector-Emitter V Voltage D44VH 7 80 D44VH 10 100 D44VH 1 30 D44VH 4 45 VCEO Collector-Emitter V Voltage D44VH 7 60 D44VH 10 80 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 20 A Collector Power Dissipation PC @TC=25? 83 W Tj Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 1.5 ?/W Rth j-c Thermal Resist

See also transistors datasheet: D44U1 , D44U2 , D44U3 , D44U4 , D44U5 , D44U6 , D44VH1 , D44VH10 , BC550 , D44VH3 , D44VH4 , D44VH5 , D44VH6 , D44VH7 , D44VH8 , D44VH9 , D44VM1 .

Keywords