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List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU505F
BU506 .. BUL54A
BUL54AFI .. BUV26
BUV26A .. BUX67B
BUX67C .. C63
C64 .. CDT1313
CDT1315 .. CIL932
CIL997 .. CMPT3646
CMPT3904 .. CS9011I
CS9012 .. CSB834Y
CSB856 .. CSD1168
CSD1168P .. CZT2222A
CZT2907 .. D38S6
D38S7 .. D44U5
D44U6 .. DCP68-25
DCP69 .. DTA115EE
DTA115EEA .. DTC143E
DTC143ECA .. DXT3906
DXT458P5 .. ECG333
ECG334 .. ES3111
ES3112 .. F4
F5 .. FJPF13009
FJPF3305 .. FMMT4401
FMMT4402 .. FT317A
FT317B .. GA53104
GA53149 .. GES4123
GES4124 .. GFT34/15
GFT34/30 .. GT2765
GT2766 .. HA7520
HA7521 .. HMJE3055T
HMPSA06 .. HUN5130
HUN5131 .. JC548
JC548A .. KF2001
KF2002 .. KRA723T
KRA723U .. KRC655E
KRC655U .. KSA539-O
KSA539-R .. KSC2383-Y
KSC2500 .. KSD1616A
KSD1616A-G .. KSR1110
KSR1111 .. KT3146G-9
KT3146V-9 .. KT605AM
KT605B .. KT8117A
KT8117B .. KT841V
KT842A .. KTA1543T
KTA1544T .. KTC5706L
KTC5707D .. MA117
MA1702 .. MF1164
MF3304 .. MJ6302
MJ6308 .. MJE341K
MJE3439 .. MM3906
MM4000 .. MMBT4274
MMBT4275 .. MMUN2116
MMUN2116L .. MP3691
MP3692 .. MPQ5130
MPQ5131 .. MPS6727
MPS6728 .. MRF316
MRF317 .. MUN5316DW
MUN5316DW1 .. NA61U
NA61W .. NB122E
NB122EH .. NB321E
NB321F .. NPS3641
NPS3642 .. NSS1C201LT1G
NSS1C201MZ4T1G .. OC4405
OC443 .. PBSS302PX
PBSS302PZ .. PE3100
PE4010 .. PN3904
PN3904R .. PZT4401
PZT4403 .. RN1116FT
RN1116MFV .. RN2306
RN2307 .. RS7515
RS7526 .. SD2857
SD2857F .. SFT352
SFT353 .. SQ3960
SQ3960F .. ST83003
ST8509 .. SUR546J
SUR547J .. T3003
T3004 .. TI607A
TI610 .. TIP664
TIP665 .. TN3019A
TN3020 .. TP3905R
TP3906 .. UMC2N
UMC3 .. UN6117S
UN6118 .. ZT112
ZT113 .. ZTX326M
ZTX327 .. ZXTN23015CFH
ZXTN25012EFH .. ZXTPS720MC
 
D6 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

D6 Transistor Datasheet. Parameters and Characteristics.

Type Designator: D6

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.15

Maximum collector-base voltage |Ucb|, V: 30

Maximum collector-emitter voltage |Uce|, V: 25

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.03

Maksimalna temperatura (Tj), °C: 175

Transition frequency (ft), MHz: 200

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 200

Noise Figure, dB: -

Package of D6 transistor:

D6 Equivalent Transistors - Cross-Reference Search
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D6 PDF doc:

1.1. mtd6n20e.pdf Size:269K _motorola

D6
D6
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD6N20E/D Designer's? Data Sheet MTD6N20E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET NChannel EnhancementMode Silicon Gate 6.0 AMPERES 200 VOLTS This advanced TMOS EFET is designed to withstand high RDS(on) = 0.7 OHM energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor ? controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. D Avalanche Energy Specified SourcetoDrain Diode Recovery Time Comparable to a CASE 369A13, Style 2 Discrete Fast Recovery Diode DPAK Diode is Character

1.2. msd601-r.pdf Size:110K _motorola

D6
D6
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MSD601RT1/D NPN General Purpose Amplifier * MSD601-RT1 Transistors Surface Mount COLLECTOR MSD601-ST1 3 *Motorola Preferred Device 2 1 3 BASE EMITTER MAXIMUM RATINGS (TA = 25C) 2 1 Rating Symbol Value Unit CollectorBase Voltage V(BR)CBO 60 Vdc CASE 318D03, STYLE 1 CollectorEmitter Voltage V(BR)CEO 50 Vdc SC59 EmitterBase Voltage V(BR)EBO 7.0 Vdc Collector Current Continuous IC 100 mAdc Collector Current Peak IC(P) 200 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Power Dissipation PD 200 mW Junction Temperature TJ 150 C Storage Temperature Tstg 55 ~ +150 C ELECTRICAL CHARACTERISTICS (TA = 25C) Characteristic Symbol Min Max Unit CollectorEmitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) V(BR)CEO 50 Vdc CollectorBase Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 60 Vdc EmitterBase Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 7.0 Vdc CollectorBase

1.3. mtd6n10e.pdf Size:211K _motorola

D6
D6
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD6N10E/D Designer's? Data Sheet MTD6N10E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET NChannel EnhancementMode Silicon Gate 6.0 AMPERES 100 VOLTS This advanced TMOS EFET is designed to withstand high RDS(on) = 0.400 OHM energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor ? controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected D voltage transients. Avalanche Energy Specified SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode G Diode is Characterized for Use in Bridge

1.4. mtd6p10e.pdf Size:261K _motorola

D6
D6
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD6P10E/D Designer's? Data Sheet MTD6P10E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET PChannel EnhancementMode Silicon Gate 6.0 AMPERES 100 VOLTS This advanced TMOS EFET is designed to withstand high RDS(on) = 0.66 OHM energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor ? controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. CASE 369A13, Style 2 Avalanche Energy Specified DPAK D SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characte

1.5. bd676_bd678_bd680_bd682.pdf Size:110K _motorola

D6
D6
Order this document MOTOROLA by BD676/D SEMICONDUCTOR TECHNICAL DATA BD676 BD676A Plastic Medium-Power BD678 Silicon PNP Darlingtons BD678A . . . for use as output devices in complementary generalpurpose amplifier applica- BD680 tions. High DC Current Gain BD680A hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc Monolithic Construction BD682 BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD675, 675A, 677, 677A, 679, 679A, 681 IIIIIIIIIIIIIIIIIIIIIIII BD 678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703 IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII III III III IIII IIII IIII 4.0 AMPERE DARLINGTON IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII III III III IIII IIII IIII MAXIMUM RATING POWER TRANSISTORS IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII III III III IIIIIIIII III III III IIII IIII IIII IIII IIII IIII BD676 BD678 BD680 PNP SILICON BD676A BD678A BD680A Rating SymbolIII III BD682III Unit 45, 60, 80, 100 VOLTS IIIIIIIII IIIIIIIII III III III II

1.6. bd675_bd675a_bd677_bd677a_bd679_bd679a_bd681.pdf Size:112K _motorola

D6
D6
Order this document MOTOROLA by BD675/D SEMICONDUCTOR TECHNICAL DATA BD675 BD675A Plastic Medium-Power BD677 Silicon NPN Darlingtons BD677A . . . for use as output devices in complementary generalpurpose amplifier applica- BD679 tions. High DC Current Gain BD679A hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc Monolithic Construction BD681 * BD675, 675A, 677, 677A, 679, 679A, 681 are complementary with BD676, 676A, *Motorola Preferred Device 678, 678A, 680, 680A, 682 IIIIIIIIIIIIIIIIIIIIIIII BD 677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803 IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII III IIII III IIII IIII III 4.0 AMPERE DARLINGTON IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII III IIII III IIII IIII III MAXIMUM RATINGS POWER TRANSISTORS IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII III IIII III IIIIIIIII III IIII III IIII IIII III IIII IIII III BD675 BD677 BD679 NPN SILICON BD675A BD677A BD679A Rating SymbolIII IIII Unit BD681III IIIIIIIII IIIIIIIII III I

1.7. msd6100rev0d.pdf Size:64K _motorola

D6
D6
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MSD6100/D Dual Switching Diode MSD6100 Common Cathode Anode 1 2 Anode 1 2 3 CASE 2904, STYLE 3 TO92 (TO226AA) 3 Cathode MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Recurrent Peak Forward Current IF 200 mAdc Peak Forward Surge Current IFM(surge) 500 mAdc (Pulse Width = 10 sec) Power Dissipation @ TA = 25C PD(1) 625 mW Derate above 25C 5.0 mW/C Operating and Storage Junction TJ, Tstg(1) 55 to +135 C Temperature Range ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Max Unit Breakdown Voltage V(BR) 100 Vdc (I(BR) = 100 Adc) Reverse Current IR Adc (VR = 100 Vdc) 5.0 (VR = 50 Vdc) 0.1 (VR = 50 Vdc, TA = 125C) 50 Forward Voltage VF Vdc (IF = 1.0 mAdc) 0.55 0.7 (IF = 10 mAdc) 0.67 0.82 (IF = 100 mAdc) 0.75 1.1 Capacitance C 1.5 pF (VR = 0) Reverse Recovery Time trr 4.0 ns (IF = IR =

1.8. msd6150rev0d.pdf Size:64K _motorola

D6
D6
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MSD6150/D Dual Diode MSD6150 Common Anode 3 Anode 1 2 3 CASE 2904, STYLE 4 TO92 (TO226AA) Cathode 1 2 Cathode MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Peak Forward Recurrent Current IF 200 mAdc Peak Forward Surge Current IFM(surge) 500 mAdc (Pulse Width = 10 sec) Total Device Dissipation @ TA = 25C PD(1) 625 mW Derate above 25C 5.0 mW/C Operating and Storage Junction TJ, Tstg(1) 55 to +135 C Temperature Range ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Typ Max Unit Breakdown Voltage V(BR) 70 Vdc (I(BR) = 100 Adc) Reverse Current IR 0.1 Adc (VR = 50 Vdc) Forward Voltage VF 0.80 1.0 Vdc (IF = 10 mAdc) Capacitance C 5.0 8.0 pF (VR = 0) Reverse Recovery Time trr 100 ns (IF = IR = 10 mAdc, VR = 5.0 Vdc, irr = 1.0 mAdc) 1. Continuous package improvements have enhanced these g

1.9. mjd6036r_mjd6039.pdf Size:270K _motorola

D6
D6
Order this document MOTOROLA by MJD6036/D SEMICONDUCTOR TECHNICAL DATA NPN MJD6036 Complementary Darlington PNP MJD6039 Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages SILICON in applications such as switching regulators, convertors, and power amplifiers. POWER TRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) 4 AMPERES Straight Lead Version in Plastic Sleeves (1 Suffix) 80 VOLTS Available on 16 mm Tape and Reel for Automatic Handling (T4 Suffix) 20 WATTS Surface Mount Replacements for 2N60342N6039 Series Monolithic Construction With Builtin BaseEmitter Shunt Resistors High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc IIIIIIIIIIIIIIIIIIIIIII Complementary Pairs Simplifies Designs IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIII IIIII III MAXIMUM RATINGS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIII IIIIIIIIIIIII II

1.10. mtd6n15r.pdf Size:231K _motorola

D6
D6
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD6N15/D Designer's? Data Sheet MTD6N15 Power Field Effect Transistor DPAK for Surface Mount NChannel EnhancementMode Silicon Gate TMOS POWER FET This TMOS Power FET is designed for high speed, low loss 6.0 AMPERES power switching applications such as switching regulators, convert- 150 VOLTS ers, solenoid and relay drivers. RDS(on) = 0.3 OHM Silicon Gate for Fast Switching Speeds Low RDS(on) 0.3 ? Max ? Rugged SOA is Power Dissipation Limited SourcetoDrain Diode Characterized for Use With Inductive Loads D Low Drive Requirement VGS(th) = 4.0 V Max Surface Mount Package on 16 mm Tape CASE 369A13, Style 2 G DPAK (TO252) S MAXIMUM RATINGS Rating Symbol Value Unit DrainSource Voltage VDSS 150 Vdc DrainGate Voltage (RGS = 1.0 M?) VDGR 150 Vdc GateSource Voltage Continuous VGS 20 Vdc GateSource Voltage NonRepetitive (tp ? 50 s) VGSM 40 Vpk Drain Current Con

1.11. msd602-r.pdf Size:111K _motorola

D6
D6
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MSD602RT1/D NPN General Purpose Amplifier MSD602-RT1 Transistor Surface Mount COLLECTOR Motorola Preferred Device 3 3 2 2 1 1 BASE EMITTER MAXIMUM RATINGS (TA = 25C) Rating Symbol Value Unit CASE 318D03, STYLE 1 SC59 CollectorBase Voltage V(BR)CBO 60 Vdc CollectorEmitter Voltage V(BR)CEO 50 Vdc EmitterBase Voltage V(BR)EBO 7.0 Vdc Collector Current Continuous IC 500 mAdc Collector Current Peak IC(P) 1.0 Adc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Power Dissipation PD 200 mW Junction Temperature TJ 150 C Storage Temperature Tstg 55 ~ +150 C ELECTRICAL CHARACTERISTICS (TA = 25C) Characteristic Symbol Min Max Unit CollectorEmitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 50 Vdc CollectorBase Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 60 Vdc EmitterBase Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 7.0 Vdc CollectorBase Cutoff Current (VC

1.12. bd675_bd677_bd679_bd681.pdf Size:112K _motorola

D6
D6
Order this document MOTOROLA by BD675/D SEMICONDUCTOR TECHNICAL DATA BD675 BD675A Plastic Medium-Power BD677 Silicon NPN Darlingtons BD677A . . . for use as output devices in complementary generalpurpose amplifier applica- BD679 tions. High DC Current Gain BD679A hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc Monolithic Construction BD681 * BD675, 675A, 677, 677A, 679, 679A, 681 are complementary with BD676, 676A, *Motorola Preferred Device 678, 678A, 680, 680A, 682 IIIIIIIIIIIIIIIIIIIIIIII BD 677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803 IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII III IIII III IIII IIII III 4.0 AMPERE DARLINGTON IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII III IIII III IIII IIII III MAXIMUM RATINGS POWER TRANSISTORS IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII III IIII III IIIIIIIII III IIII III IIII IIII III IIII IIII III BD675 BD677 BD679 NPN SILICON BD675A BD677A BD679A Rating SymbolIII IIII Unit BD681III IIIIIIIII IIIIIIIII III I

1.13. 2pd601art.pdf Size:85K _philips

D6
D6
2PD601ART 50 V, 100 mA NPN general-purpose transistor Rev. 01 15 March 2007 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: 2PB709ART. 1.2 Features General-purpose transistor Small SMD plastic package 1.3 Applications General-purpose switching and amplification 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 50 V IC collector current - - 100 mA hFE DC current gain VCE =10V; 210 - 340 IC =2mA 2. Pinning information Table 2. Pinning Pin Description Simplified outline Symbol 1 base 3 3 2 emitter 3 collector 1 12 2 sym021 2PD601ART NXP Semiconductors 50 V, 100 mA NPN general-purpose transistor 3. Ordering information Table 3. Ordering information Type number Package Name Description Version 2PD601ART - plastic surface-

1.14. 2pd602aql-arl-asl.pdf Size:57K _philips

D6
D6
2PD602AQL; 2PD602ARL; 2PD602ASL 50 V, 500 mA NPN general-purpose transistors Rev. 01 27 October 2008 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number[1] Package PNP complement NXP JEDEC 2PD602AQL SOT23 TO-236AB - 2PD602ARL 2PB710ARL 2PD602ASL 2PB710ASL 2PD602AQL/DG SOT23 TO-236AB - 2PD602ARL/DG 2PB710ARL/DG 2PD602ASL/DG 2PB710ASL/DG [1] /DG: halogen-free 1.2 Features General-purpose transistors Three current gain selections AEC-Q101 qualified Small SMD plastic package 1.3 Applications General-purpose switching and amplification 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 50 V IC collector current - - 500 mA 2PD602AxL NXP Semiconductors 50 V, 500 mA NPN general-purpose transistors Table 2. Qui

1.15. 2pd602a.pdf Size:100K _philips

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D6
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D114 2PD602A NPN general purpose transistor Product data sheet 1999 Apr 23 Supersedes data of 1997 Jun 20 NXP Semiconductors Product data sheet NPN general purpose transistor 2PD602A FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 50 V). 1 base 2 emitter APPLICATIONS 3 collector General purpose switching and amplification. DESCRIPTION handbook, halfpage 3 NPN transistor in an SC-59 plastic package. 3 PNP complement: 2PB710A. 1 MARKING 2 12 TYPE NUMBER MARKING CODE Top view MAM321 2PD602AQ XQ 2PD602AR XR Fig.1 Simplified outline (SC-59) and symbol. 2PD602AS XS LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 60 V VCEO collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 5 V IC collector current (DC) - 500

1.16. 2pd601arl-asl.pdf Size:56K _philips

D6
D6
2PD601ARL; 2PD601ASL 50 V, 100 mA NPN general-purpose transistors Rev. 01 6 November 2008 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number[1] Package PNP complement NXP JEDEC 2PD601ARL SOT23 TO-236AB 2PB709ARL 2PD601ASL 2PB709ASL 2PD601ARL/DG SOT23 TO-236AB 2PB709ARL/DG 2PD601ASL/DG 2PB709ASL/DG [1] /DG: halogen-free. 1.2 Features General-purpose transistors Two current gain selections AEC-Q101 qualified Small SMD plastic package 1.3 Applications General-purpose switching and amplification 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 50 V IC collector current - - 100 mA hFE DC current gain VCE =10V; IC =2mA hFE group R 210 - 340 hFE group S 290 - 460 2PD601ARL; 2PD601ASL NXP Semiconductors 50

1.17. 2pd601a_4.pdf Size:47K _philips

D6
D6
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 2PD601A NPN general purpose transistor 1999 Apr 23 Product specification Supersedes data of 1997 Jun 20 Philips Semiconductors Product specification NPN general purpose transistor 2PD601A FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 50 V). 1 base 2 emitter APPLICATIONS 3 collector General purpose switching and amplification. DESCRIPTION handbook, halfpage 3 3 NPN transistor in an SC-59 plastic package. PNP complement: 2PB709A. 1 2 MARKING 12 TYPE NUMBER MARKING CODE Top view MAM321 2PD601AQ ZQ 2PD601AR ZR Fig.1 Simplified outline (SC-59) and symbol. 2PD601AS ZS LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 60 V VCEO collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 6V IC collector current (DC) - 1

1.18. bld6g21l-50_bld6g21ls-50.pdf Size:378K _philips

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BLD6G21L-50; BLD6G21LS-50 TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor Rev. 2 17 August 2010 Product data sheet 1. Product profile 1.1 General description The BLD6G21L-50 and BLD6G21LS-50 incorporate a fully integrated Doherty solution using NXPs state of the art GEN6 LDMOS technology. This device is perfectly suited for TD-SCDMA base station applications at frequencies from 2010 MHz to 2025 MHz. The main and peak device, input splitter and output combiner are integrated in a single package. This package consists of one gate and drain lead and two extra leads of which one is used for biasing the peak amplifier and the other is not connected. It only requires the proper input/output match and bias setting as with a normal class-AB transistor. Table 1. Typical performance RF performance at Th = 25 C. Mode of operation f VDS PL(AV) Gp ?D ACPR PL(3dB) (MHz) (V) (W) (dB) (%) (dBc) (W) TD-SCDMA [1][2] 2010 to 2025 28 8 14.5 43 -24 53 [1] Test

1.19. bld6g22l-50_bld6g22ls-50.pdf Size:363K _philips

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BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor Rev. 3 17 August 2010 Product data sheet 1. Product profile 1.1 General description The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using NXPs state of the art GEN6 LDMOS technology. This device is perfectly suited for CDMA base station applications at frequencies from 2110 MHz to 2170 MHz. The main and peak device, input splitter and output combiner are integrated in a single package. This package consists of one gate and drain lead and two extra leads of which one is used for biasing the peak amplifier and the other is not connected. It only requires the proper input/output match and bias setting as with a normal class-AB transistor. Table 1. Typical performance RF performance at Th = 25 C. Mode of operation f VDS PL(AV) Gp ?D ACPR PL(3dB) (MHz) (V) (W) (dB) (%) (dBc) (W) W-CDMA [1][2] 2110 to 2170 28 8 14 40 -30 55 [1] Test signal: 2-c

1.20. 2pd602a_4.pdf Size:47K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 2PD602A NPN general purpose transistor 1999 Apr 23 Product specification Supersedes data of 1997 Jun 20 Philips Semiconductors Product specification NPN general purpose transistor 2PD602A FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 50 V). 1 base 2 emitter APPLICATIONS 3 collector General purpose switching and amplification. DESCRIPTION handbook, halfpage 3 NPN transistor in an SC-59 plastic package. 3 PNP complement: 2PB710A. 1 MARKING 2 12 TYPE NUMBER MARKING CODE Top view MAM321 2PD602AQ XQ 2PD602AR XR Fig.1 Simplified outline (SC-59) and symbol. 2PD602AS XS LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 60 V VCEO collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 5V IC collector current (DC) -

1.21. pemd6_pumd6.pdf Size:272K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET PEMD6; PUMD6 NPN/PNP resistor-equipped transistors; R1 = 4.7 k?, R2 = open Product data sheet 2004 Apr 07 Supersedes data of 2003 Nov 04 NXP Semiconductors Product data sheet NPN/PNP resistor-equipped transistors; PEMD6; PUMD6 R1 = 4.7 k?, R2 = open FEATURES DESCRIPTION Built-in bias resistors NPN/PNP resistor-equipped transistors (see _Data_Sheet_Remark Supersedes data of 2003 Nov 04 Simplified circuit design for package details). Reduction of component count Reduced pick and place costs. QUICK REFERENCE DATA SYMBOL PARAMETER TYP. MAX. UNIT APPLICATIONS VCEO collector-emitter - 50 V Low current peripheral driver voltage Replacement of general purpose transistors in digital IO output current (DC) - 100 mA applications TR1 NPN - - - Control of IC inputs. TR2 PNP - - - R1 bias resistor 4.7 - k? R2 open - - - PRODUCT OVERVIEW PACKAGE NPN/NPN PNP/PNP TYPE NUMBER MARKING CODE COMPLEMENT COMPLEM

1.22. pumd6_2.pdf Size:58K _philips2

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DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage MBD128 PUMD6 NPN/PNP resistor-equipped transistor 1999 May 28 Product specification Supersedes data of 1997 Dec 15 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistor PUMD6 FEATURES Transistors with different polarity, each with a built-in bias resistor R1 (typ. 4.7 k?) 6 5 4 handbook, halfpage No mutual interference between the transistors 6 5 4 Simplification of circuit design R1 Reduces number of components and board space. TR2 TR1 R1 APPLICATIONS 1 2 3 Especially suitable for space reduction in interface and Top view MAM381 1 2 3 driver circuits Inverter circuit configurations without use of external resistors. Fig.1 Simplified outline (SC-88; SOT363) and symbol. DESCRIPTION NPN/PNP resistor-equipped transistors in an SC-88 (SOT363) plastic package. PINNING PIN DESCRIPTION 1 3 1, 4 emitter TR1; TR2 2, 5 base TR1; TR2 2 6, 3 collector TR1; TR2 M

1.23. phb69n03lt_phd69n03lt_php69n03lt_7.pdf Size:111K _philips2

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Philips Semiconductors Product specification N-channel TrenchMOS? transistor PHP69N03LT, PHB69N03LT Logic level FET PHD69N03LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 69 A Low thermal resistance Logic level compatible RDS(ON) ? 12 m? (VGS = 10 V) g RDS(ON) ? 14 m? (VGS = 5 V) s GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using trench technology. Applications:- High frequency computer motherboard d.c. to d.c. converters High current switching The PHP69N03LT is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB69N03LT is supplied in the SOT404 (D2PAK) surface mounting package. The PHD69N03LT is supplied in the SOT428 (DPAK)surface mounting package. PINNING SOT78 (TO220AB) SOT404 (D2PAK) SOT428 (DPAK) tab PIN DESCRIPTION tab tab 1 gate 2 drain 1 2 2 3 source 1 2 3 1 3 1 3 tab

1.24. pmbd6100_3.pdf Size:63K _philips2

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBD6100 High-speed double diode 1999 May 11 Product specification Supersedes data of 1996 Sep 18 Philips Semiconductors Product specification High-speed double diode PMBD6100 FEATURES DESCRIPTION PINNING Small plastic SMD package The PMBD6100 consists of two PIN DESCRIPTION high-speed switching diodes with High switching speed: max. 4 ns 1 anode (a1) common cathodes, fabricated in General application 2 anode (a2) planar technology, and encapsulated Continuous reverse voltage: in the small SOT23 plastic SMD 3 common cathode max. 70 V package. Repetitive peak reverse voltage: max. 85 V Repetitive peak forward current: max. 450 mA. handbook, 4 columns 21 APPLICATIONS 21 High-speed switching in surface mounted circuits. 3 3 MAM108 Top view Marking code: p5B = made in Hong Kong; t5B = made in Malaysia. Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance wi

1.25. phd6n10e_1.pdf Size:56K _philips2

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Philips Semiconductors Product specification PowerMOS transistor PHD6N10E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 100 V mounting featuring high avalanche ID Drain current (DC) 6.3 A energy capability, stable blocking Ptot Total power dissipation 50 W voltage, fast switching and high RDS(ON) Drain-source on-state resistance 0.54 ? thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications. PINNING - SOT428 PIN CONFIGURATION SYMBOL PIN DESCRIPTION tab d 1 gate 2 drain g 3 source 2 s tab drain 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ID Continuous drain current Tmb = 25 ?C; VGS = 10 V - 6.3 A Tmb

1.26. php63nq03lt_phb63nq03lt_phd63nq03lt.pdf Size:267K _philips2

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PHP/PHB/PHD63NQ03LT TrenchMOS logic level FET Rev. 01 14 June 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: PHP63NQ03LT in SOT78 (TO-220AB) PHB63NQ03LT in SOT404 (D2-PAK) PHD63NQ03LT in SOT428 (D-PAK). 1.2 Features Logic level compatible Low gate charge 1.3 Applications DC to DC converters Switched mode power supplies 1.4 Quick reference data VDS =30V ID = 68.9 A Ptot = 111 W RDSon ? 13 m? 2. Pinning information Table 1: Pinning - SOT78, SOT404, SOT428 simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) mb mb mb d [1] 2 drain (d) 3 source (s) g mb mounting base, connected to drain (d) s MBB076 2 2 13 1 3 Top view MBK091 MBK116 MBK106 1 2 3 SOT78 (TO-220) SOT404 (D2-PAK) SOT428 (D-PAK) [1] It is not possible to make connection to pin 2 of the SOT404 or SOT428 packages. PHP/PHB/PHD6

1.27. pmbd6050_3.pdf Size:63K _philips2

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBD6050 High-speed diode 1999 May 11 Product specification Supersedes data of 1996 Sep 18 Philips Semiconductors Product specification High-speed diode PMBD6050 FEATURES DESCRIPTION PINNING Small plastic SMD package The PMBD6050 is a high-speed PIN DESCRIPTION switching diode fabricated in planar High switching speed: max. 4 ns 1 anode technology, and encapsulated in the Continuous reverse voltage: 2 not connected small SOT23 plastic SMD package. max. 70 V 3 cathode Repetitive peak reverse voltage: max. 85 V Repetitive peak forward current: max. 500 mA. handbook, halfpage 21 2 APPLICATIONS 1 n.c. High-speed switching in thick and 3 thin-film circuits. 3 MAM185 Marking code: p5A = made in Hong Kong; t5A = made in Malaysia. Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS M

1.28. std6nc40.pdf Size:272K _st

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STD6NC40 N-CHANNEL 400V - 0.75? - 5A - DPAK / IPAK PowerMeshII MOSFET TYPE VDSS RDS(on) ID STD6NC40 400V < 1 ? 5A TYPICAL RDS(on) = 0.75? EXTREMELY HIGH dv/dt CAPABILITY 3 3 2 100% AVALANCHE TESTED 1 1 GATE CHARGE MINIMIZED ADD SUFFIX T4 FOR ORDERING IN TAPE & REEL DPAK IPAK ADD SUFFIX -1 FOR ORDERING IN IPAK DESCRIPTION The PowerMESHII is the evolution of the first generation of MESH OVERLAY. The layout re- finements introduced greatly improve the Ron*area INTERNAL SCHEMATIC DIAGRAM figure of merit while keeping the device at the lead- ing edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS SWITH MODE LOW POWER SUPPLIES (SMPS) CFL ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 400 V VDGR Drain-gate Voltage (RGS = 20 k?) 400 V VGS Gate- source Voltage 30 V ID Drain Current (continuos) at TC = 25C 5A ID Drain Current (continuos) at TC = 100C 3A IDM ( ) Drain Curr

1.29. stgd6nc60h.pdf Size:477K _st

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STGD6NC60H N-channel 600V - 7A - DPAK Very fast PowerMESH IGBT General features IC VCE(sat)Max Type VCES @25C @100C STGD6NC60H 600V <2.5V 7A Low on voltage drop (Vcesat) 3 1 Low CRES / CIES ratio (no cross-conduction susceptibility) DPAK High frequency operation Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Internal schematic diagram PowerMESH IGBTs, with outstanding performances. The suffix H identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) manta in ing a low voltage drop. Applications High frequency inverters SMPS and PFC in both hard switch and resonant topologies Motor drivers Order code Part number Marking Package Packaging STGD6NC60HT4 GD6NC60H DPAK Tape & reel February 2007 Rev 3 1/14 www.st.com 14 Obsolete Product(s) - Obsolete Prod

1.30. std65n55f3.pdf Size:441K _st

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STD65N55F3 N-channel 55V - 6.5m? - 80A - DPAK STripFET Power MOSFET Features Type VDSS RDS(on) ID Pw STD65N55F3 55V <8.5m? 80A 110W Standard threshold drive 3 100% avalanche tested 1 DPAK Description This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics' unique Single Feature Size strip-based process, which has decreased the critical alignment steps, offering remarkable manufacturing reproducibility. The Internal schematic diagram outcome is a transistor with extremely high packing density for low onresistance, rugged avalanche characteristics and low gate charge. Applications Switching application Automotive Order code Part number Marking Package Packaging STD65N55F3 65N55F3 DPAK Tape & reel May 2007 Rev 3 1/13 www.st.com 13 Contents STD65N55F3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . .

1.31. pd60015.pdf Size:67K _st

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PD60015 PD60015S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA Designed for GSM / EDGE / IS-97 applications EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 15 W with 10 dB gain @ 2000 MHz PowerSO-10RF DESCRIPTION (formed lead) The PD60015 is a common source N-Channel, en- ORDER CODE BRANDING hancement-mode lateral Field-Effect RF power PD60015 PD60015 transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies of up to 2 GHz. PD60015 boasts the excellent gain, lin- earity and reliability of STs latest LDMOS technolo- gy mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD60015s superior lin- earity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially opt

1.32. stb6n52k3_std6n52k3_stf6n52k3_stp6n52k3.pdf Size:1153K _st

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STB6N52K3, STD6N52K3 STF6N52K3, STP6N52K3 N-channel 525 V, 1 ?, 5 A, D?PAK, DPAK, TO-220FP, TO-220 SuperMESH3 Power MOSFET Features RDS(on) 3 Order codes VDSS ID Pw max 1 3 2 STB6N52K3 5 A 70 W DPAK 1 STD6N52K3 5 A(1) 25 W TO-220FP 525 V < 1.2 ? STF6N52K3 5 A 70 W STP6N52K3 1. Limited by package 3 3 100% avalanche tested 2 1 1 D?PAK TO-220 Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitance Figure 1. Internal schematic diagram Improved diode reverse recovery characteristics D(2) Zener-protected Application Switching applications G(1) Description These devices are made using the SuperMESH3 Power MOSFET technology that is obtained via improvements applied to S(3) STMicroelectronics SuperMESH technology AM01476v1 combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, makin

1.33. sti6n62k3_stp6n62k3_stu6n62k3_stf6n62k3_std6n62k3.pdf Size:1146K _st

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STD6N62K3, STF6N62K3 STI6N62K3, STP6N62K3, STU6N62K3 N-channel 620 V, 0.95 ?, 5.5 A SuperMESH3 Power MOSFET in IPAK, DPAK, TO-220,TO-220FP, I?PAK Features RDS(on) 3 Order codes VDSS ID Pw 2 max. 1 3 2 1 IPAK STD6N62K3 90 W I?PAK STF6N62K3 30 W 3 STI6N62K3 620 V < 1.2 ? 5.5 A 90 W 1 STP6N62K3 90 W DPAK STU6N62K3 90 W 100% avalanche tested 3 3 2 1 2 1 Extremely high dv/dt capability TO-220 TO-220FP Gate charge minimized Very low intrinsic capacitance Improved diode reverse recovery Figure 1. Internal schematic diagram characteristics D(2) Zener-protected Application Switching applications G(1) Description These devices are made using the SuperMESH3 Power MOSFET technology that is obtained via improvements applied to STMicroelectronics SuperMESH technology S(3) combined with a new optimized vertical structure. AM01476v1 The resulting product has an extremely low on resistance, superior dynamic performance and hig

1.34. stb6nm60n_std6nm60n_stf6nm60n_stp6nm60n.pdf Size:685K _st

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STx6NM60N N-channel 600 V, 0.85 ?, 4.6 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 STB6NM60N 650 V < 0.92 ? 4.6 A 2 2 1 1 STD6NM60N 650 V < 0.92 ? 4.6 A TO-220 TO-220FP STD6NM60N-1 650 V < 0.92 ? 4.6 A 3 1 STF6NM60N 650 V < 0.92 ? 4.6 A (1) D?PAK STP6NM60N 650 V < 0.92 ? 4.6 A 3 3 1 2 1 1. Limited only by maximum temperature allowed DPAK IPAK 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Figure 1. Internal schematic diagram Application Switching applications D(2) Description This series of devices implements second G(1) generation MDmesh technology. This revolutionary Power MOSFET associates a new vertical structure to the STMicroelectronics strip layout to yield one of the worlds lowest on- S(3) resistance and gate charge. It is therefore suitable for the most demanding high-efficiency converters. AM01475v1 Table

1.35. std6n10.pdf Size:344K _st

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STD6N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STD6N10 100 V < 0.45 ? 6 A TYPICAL R = 0.35 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 LOW GATE CHARGE 3 2 HIGH CURRENT CAPABILITY 1 1 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION IPAK DPAK THROUGH-HOLE IPAK (TO-251) POWER TO-251 TO-252 PACKAGE IN TUBE (SUFFIX "-1") (Suffix "-1") (Suffix "T4") SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS REGULATORS DC-DC & DC-AC CONVERTERS MOTOR CONTROL, AUDIO AMPLIFIERS AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 100 V VDGR Drain- gate Voltage (RGS = 20 k?)100 V VGS Gate-source Voltage 20 V ID Drain C

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STD60NH03L STD60NH03L-1 N-channel 30V - 0.0075? - 60A - DPAK/IPAK STripFET III Power MOSFET General features Type VDSS RDS(on) ID STD60NH03L-1 30V <0.009? 60A STD60NH03L 30V <0.009? 60A 3 3 2 1 RDS(ON) x Qg industrys benchmark 1 Conduction losses reduced DPAK IPAK Switching losses reduced Low threshold device Description The device utilizes the latest advanced design rules of STs proprietary STripFET technology. Internal schematic diagram This is suitable for the most demanding DC-DC converter application where high efficiency is to be achieved.e of paramount importance. Applications Switching application Order codes Part number Marking Package Packaging STD60NH03LT4 D60NH03L DPAK Tape & reel STD60NH03L-1 D60NH03L IPAK Tube July 2006 Rev 6 1/16 www.st.com 16 Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) Contents STD60NH03L - STD60NH03L-1 Contents 1 Electrical ratings . . . . . . . . . . . . .

1.37. sd60030.pdf Size:32K _st

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SD60030 RF POWER TRANSISTORS The LdmoST FAMILY TARGET DATA Designed for GSM / EDGE / IS-97 applications EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 30 W with 10 dB gain @ 2000 MHz M243 epoxy sealed ORDER CODE BRANDING DESCRIPTION SD60030 SD60030 The SD60030 is a common source N-Channel en- hancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.0 GHz. PIN CONNECTION The SD60030 is designed for high gain and broad- band performance operating in common source 1 mode at 26 V. It is ideal for base station applications requiring high linearity. 3 2 1. Drain 3. Source 2. Gate ABSOLUTE MAXIMUM RATINGS (TCASE = 25 C) Symbol Parameter Value Unit V(BR)DSS Drain-Source Voltage 65 V VDGR Drain-Gate Voltage (RGS = 1 M?) 65 V VGS Gate-Source Voltage 20 V ID Drain Current TBD A PDISS Power Dissipation (@ Tc = 70 C) TBD W Tj Max. Operating Junction Tempe

1.38. stp6nk50z_stf6nk50z_std6nk50z.pdf Size:399K _st

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STP6NK50Z - STF6NK50Z STD6NK50Z N-CHANNEL 500V - 0.93? - 5.6A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH MOSFET TYPE VDSS RDS(on) ID Pw STP6NK50Z 500 V <1.2? 5.6 A 90 W STF6NK50Z 500 V <1.2? 5.6 A 25 W STD6NK50Z 500 V <1.2? 5.6 A 90 W TYPICAL RDS(on) = 0.93 ? 3 EXTREMELY HIGH dv/dt CAPABILITY 2 1 100% AVALANCHE TESTED GATE CHARGE MINIMIZED TO-220 TO-220FP VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING 3 REPEATIBILITY 1 DPAK DESCRIPTION The SuperMESH series is obtained through an extreme optimization of STs well established strip- based PowerMESH layout. In addition to pushing INTERNAL SCHEMATIC DIAGRAM on-resistance significantly down, special care is tak- en to ensure a very good dv/dt capability for the most demanding applications. Such series comple- ments ST full range of high voltage MOSFETs in- cluding revolutionary MDmesh products. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTO

1.39. std6nf10.pdf Size:266K _st

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STD6NF10 N-CHANNEL 100V - 0.22 ? - 6A IPAK/DPAK LOW GATE CHARGE STripFET POWER MOSFET TYPE VDSS RDS(on) ID STD6NF10 100 V <0.250 ? 6 A TYPICAL RDS(on) = 0.22 ? EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED 3 3 LOW THRESHOLD DRIVE 2 1 THROUGH-HOLE IPAK (TO-251) POWER 1 PACKAGE IN TUBE (SUFFIX -1") IPAK DPAK SURFACE-MOUNTING DPAK (TO-252) TO-251 TO-252 POWER PACKAGE IN TAPE & REEL (Suffix -1) (Suffix T4) (SUFFIX T4") DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed INTERNAL SCHEMATIC DIAGRAM to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high- efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. APPLICATIONS HIGH-EFFICIENCY DC-DC CONVERTERS UPS AND MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS Symbol

1.40. bd677_bd677a_bd678_bd678a_bd679_bd679a_bd680_bd680a_bd681_bd682.pdf Size:41K _st

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BD677/A/679/A681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration mounted in Jedec SOT-32 plastic package. They are intended for use in medium power linar and switching applications 1 2 The complementary PNP types are BD678, 3 BD678A, BD680, BD680A and BD682 respectively. SOT-32 INTERNAL SCHEMATIC DIAGRAM R Typ. = 10 K? R Typ. = 150 ? 1 2 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BD677/A BD679/A BD681 PNP BD678/A BD680/A BD682 V Collector-Base Voltage (I = 0) 60 80 100 V CBO E V Collector-Emitter Voltage (I = 0) 60 80 100 V CEO B VEBO Emitter-Base Voltage (IC = 0) 5 V IC Collector Current 4 A I Collector Peak Current 6 A CM IB Base Current 0.1 A o P Total Dissipation at T ? 25 C40 W tot c o Tstg Storage Temperature -65 to 150 C o Tj Max

1.41. std60nf55l.pdf Size:455K _st

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STD60NF55L N-CHANNEL 55V - 0.012? - 60A DPAK STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STD60NF55L 55V < 0.015? 60A TYPICAL RDS(on) = 0.012? LOW THRESHOLD DRIVE ADD SUFFIX T4 FOR ORDERING IN TAPE & 3 REEL 1 DPAK DESCRIPTION TO-252 This Power Mosfet is the latest development of STMicroelectronics unique Single Feature Size strip-based process. The resulting tran- sistor shows extremely high packing density for INTERNAL SCHEMATIC DIAGRAM low on-resistance, rugged avalance characteris- tics and less critical alignment steps therefore a re- markable manufacturing reproducibility.. APPLICATIONS AUTOMOTIVE MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 55 V VDGR Drain-gate Voltage (RGS = 20 k?) 55 V VGS Gate- source Voltage 15 V ID Drain Current (continuous) at TC = 25C 60 A ID Drain Current (continuous) at TC = 100C 42 A IDM ( ) Drain Current (pulsed) 240 A PTOT Total Dissipation at TC

1.42. std60nf06.pdf Size:414K _st

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STD60NF06 N-channel 60V - 0.014? - 60A - DPAK STripFET II Power MOSFET General features Type VDSS RDS(on) ID STD60NF06 60V <0.016? 60A Exceptional dv/dt capability 3 Application oriented characterization 1 100% avalanche tested DPAK Description This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high- Internal schematic diagram efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements. Applications Switching application Order codes Part number Marking Package Packaging STD60NF06T4 D60NF06 DPAK Tape & reel July 2006 Rev 2 1/13 www.st.com 13 Contents STD60NF06 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Ele

1.43. std616a.pdf Size:121K _st

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STD616A HIGH VOLTAGE NPN POWER TRANSISTOR REVERSE PINS OUT Vs STANDARD IPAK (TO-251) / DPAK (TO-252) PACKAGES HIGH VOLTAGE CAPABILITY HIGH DC CURRENT GAIN THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX "-1") SURFACE-MOUNTING DPAK (TO-252) 3 3 POWER PACKAGE IN TAPE & REEL 2 1 1 (SUFFIX "T4") MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION IPAK DPAK TO-251 TO-252 APPLICATIONS: (Suffix "-1") (Suffix "T4") SWITCH MODE POWER SUPPLIES DESCRIPTION The STD616A is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage withstand INTERNAL SCHEMATIC DIAGRAM capability. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Emitter Voltage (V = 0) 1000 V CES BE V Collector-Emitter Voltage (I = 0) 450 V CEO B VEBO Emitter-Base Voltage (IC = 0) 12 V IC Collector Current 1.6 A ICM Collector Peak Current (tp < 5 ms) 2.4 A I Base Current 0.8 A B I Base Peak Current (t < 5 ms)

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STB60N55F3, STD60N55F3, STF60N55F3 STI60N55F3, STP60N55F3, STU60N55F3 N-channel 55 V, 6.5 m?, 80 A, DPAK, IPAK, D2PAK, I2PAK, TO-220 TO-220FP STripFET III Power MOSFET Features Type VDSS RDS(on) ID Pw 3 3 2 1 3 1 STB60N55F3 55V <8.5m? 80A 110W 2 1 DPAK IPAK STD60N55F3 55V <8.5m? 80A 110W TO-220FP STF60N55F3 55V <8.5m? 42A 30W STI60N55F3 55V <8.5m? 80A 110W STP60N55F3 55V <8.5m? 80A 110W 3 STU60N55F3 55V <8.5m? 80A 110W 3 2 1 1 3 2 D?PAK I?PAK 1 Standard threshold drive TO-220 100% avalanche tested Application Figure 1. Internal schematic diagram Switching applications Description This STripFET III Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance providing superior switching performances. Table 1. Device summary Order codes Marking Package Packaging STB60N55F3 60N55F3 D?PAK Tape and reel STD60N55F3 60N55F3 DPAK Tape and reel STF60N55F3 60N55F3 TO-220FP T

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STD60N3LH5, STP60N3LH5 STU60N3LH5, STU60N3LH5-S N-channel 30 V, 0.0072 ?, 48 A DPAK, IPAK, Short IPAK, TO-220 STripFET V Power MOSFET Features Order codes VDSS RDS(on) max ID 3 STD60N3LH5 30 V 0.008 ? 48 A 2 1 3 STP60N3LH5 30 V 0.0084 ? 48 A 2 1 IPAK TO-220 STU60N3LH5 30 V 0.0084 ? 48 A STU60N3LH5-S 30 V 0.0084 ? 48 A RDS(on) * Qg industry benchmark 3 2 Extremely low on-resistance RDS(on) 3 1 1 Very low switching gate charge Short IPAK DPAK High avalanche ruggedness Low gate drive power losses Figure 1. Internal schematic diagram Application Switching applications Description This STripFETV Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class figure of merit. Table 1. Device summary Order codes Marking Package Packaging STD60N3LH5 60N3LH5 DPAK Tape and reel STP60N3LH5 60N3LH5 TO-220 STU60N3LH5 60N3LH5 IPAK Tub

1.46. bd677a_bd679a_bd681_bd678a_bd680a_bd682.pdf Size:87K _st

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BD677/A/679/A/681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION LINEAR AND SWITCHING INDUSTRIAL 1 2 EQUIPMENT 3 SOT-32 DESCRIPTION The BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration mounted in Jedec SOT-32 plastic package. They are intended for use in medium power linar and switching applications INTERNAL SCHEMATIC DIAGRAM The complementary PNP types are BD678, BD678A, BD680, BD680A and BD682 respectively. R1 Typ.= 7K ? R2 Typ.= 230 ? ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BD677/A BD679/A BD681 PNP BD678/A BD680/A BD682 VCBO Collector-Base Voltage (IE = 0) 60 80 100 V V Collector-Emitter Voltage (I = 0) 60 80 100 V CEO B VEBO Emitter-Base Voltage (IC = 0) 5 V I Collec

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STD65NF06 STP65NF06 N-channel 60V - 11.5m? - 60A - DPAK/TO-220 STripFET II Power MOSFET General features Type VDSS RDS(on) ID STD65NF06 60V <14m? 60A STP65NF06 60V <14m? 60A 3 3 Standard level gate drive 2 1 1 100% avalanche tested TO-220 DPAK Description This Power MOSFET is the latest development of STMicroelectronics unique single feature size strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and Internal schematic diagram less critical alignment steps therefore a remarkable manufacturing reproducibility. Applications Switching application Order codes Part number Marking Package Packaging STD65NF06 D65NF06 DPAK Tape & reel STP65NF06 P65NF06 TO-220 Tube July 2006 Rev 1 1/14 www.st.com 14 Contents STD65NF06 - STP65NF06 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Elect

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STD60N3LH5 STP60N3LH5, STU60N3LH5 N-channel 30 V, 0.0072 ?, 48 A DPAK, IPAK, TO-220 STripFET V Power MOSFET Features Type VDSS RDS(on) max ID STD60N3LH5 30 V 0.008 ? 48 A 3 2 STP60N3LH5 30 V 0.0084 ? 48 A 1 STU60N3LH5 30 V 0.0084 ? 48 A TO-220 RDS(on) * Qg industry benchmark 3 Extremely low on-resistance RDS(on) 3 2 1 1 Very low switching gate charge High avalanche ruggedness DPAK IPAK Low gate drive power losses Application Figure 1. Internal schematic diagram Switching applications Description This STripFETV Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM. Table 1. Device summary Order codes Marking Package Packaging STD60N3LH5 60N3LH5 DPAK Tape and reel STP60N3LH5 60N3LH5 TO-220 Tube STU60N3LH5 60N3LH5 IPAK Tube April 2009 Doc ID 14079 Rev 3 1/16 www.st.com 16 Contents STD60N3LH5, STP60N3LH5, STU

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PD60004 PD60004S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA Designed for GSM / EDGE / IS-97 applications EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 4 W with 11 dB gain @ 2000 MHz PowerSO-10RF DESCRIPTION (formed lead) The PD60004 is a common source N-Channel, en- ORDER CODE BRANDING hancement-mode lateral Field-Effect RF power PD60004 PD60004 transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies of up to 2 GHz. PD60004 boasts the excellent gain, linearity and reliability of STs latest LDMOS tech- nology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD60004s su- perior linearity performance makes it an ideal so- lution for base station applications. The PowerSO-10 plastic package, designed to of- fer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially Po

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STD6N62K3 - STF6N62K3 STP6N62K3 - STU6N62K3 N-channel 620 V, 1.1 ?, 5.5 A, IPAK, DPAK, TO-220,TO-220FP SuperMESH3 Power MOSFET Features 3 RDS(on) 3 Type VDSS ID Pw 2 1 max 1 DPAK STD6N62K3 620 V < 1.28 ? 5.5 A 90 W IPAK STF6N62K3 620 V < 1.28 ? 5.5 A(1) 25 W STP6N62K3 620 V < 1.28 ? 5.5 A 90 W STU6N62K3 620 V < 1.28 ? 5.5 A 90 W 1. Limited by package 3 3 2 2 1 100% avalanche tested 1 TO-220 TO-220FP Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances Figure 1. Internal schematic diagram Improved diode reverse recovery characteristics Zener-protected Application Switching applications Description The new SuperMESH3 series is obtained through the combination of a further fine tuning of ST's well established strip-based PowerMESH layout with a new optimization of the vertical structure. In addition to reducing on-resistance significantly versus previous generation, special attention has bee

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STD65N55LF3 N-channel 55 V, 7.0 m?, 80 A DPAK STripFET III Power MOSFET Features RDS(on) Order code VDSS ID Pw max. STD65N55LF3 55 V < 8.5 m? 80 A 110 W 3 Low threshold drive 1 100% avalanche tested DPAK Application Switching applications Automotive Description Figure 1. Internal schematic diagram This product is a N-channel enhancement mode Power MOSFET built with STripFET III technology which is especially tailored to D (TAB or 2) minimized on-state resistance and gate charge, providing superior switching performance. G(1) S(3) AM01474v1 Table 1. Device summary Order code Marking Package Packaging STD65N55LF3 65N55LF3 DPAK Tape and reel October 2010 Doc ID 16371 Rev 2 1/13 www.st.com 13 Contents STD65N55LF3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 El

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STD60NF3LL N-channel 30V - 0.0075? - 60A - DPAK STripFET II Power MOSFET General features Type VDSS RDS(on) ID STD60NF3LL 60V <0.0095? 60A Optimal RDS(ON) x Qg trade-off @ 4.5V 3 Conduction losses reduced 1 Switching losses reduced DPAK Description This application specific Power MOSFET is the third genaration of STMicroelectronics unique Single Feature Size strip-based process. The resulting transistor shows the best trade-off between on-resistance ang gate charge. When Internal schematic diagram used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance. Applications Switching application Order codes Part number Marking Package Packaging STD60NF3LLT4 D60NF3LL DPAK Tape & reel July 2006 Rev 2 1/13 www.st.com 13 Contents STD60NF3LL Contents 1 Electrica

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STD60NF55L STD60NF55L-1 N-channel 55V - 0.012? - 60A - DPAK/IPAK STripFET II Power MOSFET General features Type VDSS RDS(on) ID STD60NF55L-1 55V <0.015? 60A STD60NF55L 55V <0.015? 60A 3 3 Low threshold drive 2 1 1 Description DPAK IPAK This MOSFET is the latest development of STMicroelectronics unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps Internal schematic diagram therefore a remarkable manufacturing reproducibility. Applications Switching application Order codes Part number Marking Package Packaging STD60NF55LT4 D60NF55L DPAK Tape & reel STD60NF55L-1 D60NF55L IPAK Tube July 2006 Rev 6 1/14 www.st.com 14 Contents STD60NF55L - STD60NF55L-1 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characterist

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STD6NF10 STU6NF10 N-channel 100 V, 0.22 ?, 6 A, DPAK, IPAK low gate charge STripFET Power MOSFET Features Type VDSS RDS(on) max ID STD6NF10 100 V < 0.250 ? 6 A STU6NF10 100 V < 0.250 ? 6 A 3 3 2 1 1 Exceptional dv/dt capability IPAK 100% avalanche tested DPAK Application Switching applications Description This Power MOSFET series realized with Figure 1. Internal schematic diagram STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high- efficiency, high-frequency isolated DC-DC converters for telecom and computer applications. It is also intended for any applications with low gate drive requirements. Table 1. Device summary Order codes Marking Package Packaging STD6NF10T4 D6NF10 DPAK Tape and reel STU6NF10 6NF10 IPAK Tube November 2008 Rev 6 1/14 www.st.com 14 Contents STD6NF10, STU6NF10 Contents 1 Electrical rati

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STGD6NC60HD N-channel 600V - 7A - DPAK Very fast PowerMESH IGBT General features IC VCE(sat)Max Type VCES @25C @100C STGD6NC60HD 600V <2.5V 7A Low on voltage drop (Vcesat) 3 1 Low CRES / CIES ratio (no cross-conduction susceptibility) DPAK Very soft ultra fast recovery antiparallel diode High frequency operation Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has Internal schematic diagram designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding performances. The suffix H identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) maintaining a low voltage drop. Applications High frequency inverters SMPS and PFC in both hard switch and resonant topologies Motor drivers Order codes Part number Marking Package Packaging STGD6NC60HDT4 GD6NC60HD DPAK Tape & reel February 2007 Rev 3

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PD60030 PD60030S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA Designed for GSM / EDGE / IS-97 applications EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 30 W with 10 dB gain @ 2000 MHz PowerSO-10RF DESCRIPTION (formed lead) The PD60030 is a common source N-Channel, en- ORDER CODE BRANDING hancement-mode lateral Field-Effect RF power PD60030 PD60030 transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies of up to 2 GHz. PD60030 boasts the excellent gain, lin- earity and reliability of STs latest LDMOS technolo- gy mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD60030s superior lin- earity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially opt

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This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

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TK20D60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS?) TK20D60U Switching Regulator Applications Unit: mm 10.0 0.3 A 9.5 0.2 0.60.1 Low drain-source ON-resistance: RDS (ON) = 0.165? (typ.) 3.65 0.2 High forward transfer admittance: ?Yfs? = 12 S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 600 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) 1.1 0.15 0.75 0.25 Characteristics Symbol Rating Unit 0.62 0.15 0.2 M A Drain-source voltage VDSS 600 V + 0.25 0.57 - 0.10 2.54 2.54 Gate-source voltage VGSS 30 V 2.53 0.2 DC (Note 1) ID 20 Drain current A Pulse (t = 1 ms) 1 2 3 IDP 40 (Note 1) 1. Gate Drain power dissipation (Tc = 25C) 2. Drain (heatsink) PD 190 W 3. Source Single pulse avalanche energy EAS 144 mJ JEDEC (Note 2) ? Avalanche current (Note 3) IAR 20 A JEITA ? Repetitive avalanche energy EAR 19 mJ TOSHIBA 2

1.64. 2sb633p_2sd613p.pdf Size:27K _sanyo

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Ordering number : ENN6662 2SB633P/2SD613P PNP / NPN Epitaxial Planar Silicon Transistors 2SB633P / 2SD613P 85V / 6A, AF 35 to 45W Output Applications Features Package Dimensions High breakdown voltage, VCEO 85V, unit : mm high current 6A. 2010C AF 35 to 45W output. [2SB633P / 2SD613P] 10.2 4.5 3.6 5.1 1.3 1.2 0.8 0.4 1 : Base 2 : Collector 1 2 3 3 : Emitter Specifications 2.55 2.55 SANYO : TO-220 ( ) : 2SB633P Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (-)100 V Collector-to-Emitter Voltage VCEO (-)85 V Emitter-to-Base Voltage VEBO (-)6 V Collector Current IC (-)6 A Collector Current (Pulse) ICP (-)10 A Collector Dissipation PC Tc=25C60 W Junction Temperature Tj 150 C Storage Temperature Tstg -55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=(--)40V, IE=0 (--)0.1 mA Emitter Cutoff Curr

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Ordering number:346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions High breakdown voltage VCEO 100/120V, High unit:mm current 1A. 2009B Low saturation voltage, excellent hFE linearity. [2SB631, 631K/2SD600, 600K] 1 : Emitter 2 : Collector 3 : Base ( ) : 2SB631, 631K JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol 2SB631, D600 2SB631K, D600K Unit Conditions Collector-to-Base Voltage VCBO ()100 ()120 V Collector-to-Emitter Voltage VCEO ()100 ()120 V Emitter-to-Base Voltage VEBO ()5 V Collector Current IC ()1 A Collector Current (Pulse) ICP ()2 A Collector Dissipation PC 1 W Tc=25?C 8 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector-to-Base Breakdown Voltage V(BR)CBO IC=()10

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Ordering number:513H PNP/NPN Epitaxial Planar Silicon Transistor 2SB633/2SD613 85V/6A, AF 25 to 35W Output Applications Features Package Dimensions High breakdown voltage, VCEO85V, high current 6A. unit:mm AF25 to 35W output. 2010C [2SB633/2SD613] JEDEC : TO-220AB 1 : Base ( ) : 2SB633 EIAJ : SC-46 2 : Collector 3 : Emitter Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()100 V Collector-to-Emitter Voltage VCEO ()85 V Emitter-to-Base Voltage VEBO ()6 V Collector Current IC ()6 A Collector Current (Pulse) ICP ()10 A Collector Dissipation PC Tc=25?C 40 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=()40V, IE=0 ()0.1 mA Emitter Cutoff Current IEBO VEB=()4V, IC=0 ()0.1 mA DC Current Gain hFE1 VCE=()5V, IC=()1A 40* 3

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Ordering number:346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions High breakdown voltage VCEO 100/120V, High unit:mm current 1A. 2009B Low saturation voltage, excellent hFE linearity. [2SB631, 631K/2SD600, 600K] 1 : Emitter 2 : Collector 3 : Base ( ) : 2SB631, 631K JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol 2SB631, D600 2SB631K, D600K Unit Conditions Collector-to-Base Voltage VCBO ()100 ()120 V Collector-to-Emitter Voltage VCEO ()100 ()120 V Emitter-to-Base Voltage VEBO ()5 V Collector Current IC ()1 A Collector Current (Pulse) ICP ()2 A Collector Dissipation PC 1 W Tc=25?C 8 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector-to-Base Breakdown Voltage V(BR)CBO IC=()10

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Ordering number:341G PNP/NPN Epitaxial Planar Silicon Transistor 2SB632, 632K/2SD612, 612K 25V/35V, 2A Low-Frequency Power Amplifier Applications Features Package Dimensions High collector dissipation and wide ASO. unit:mm 2009B [2SB632, 632K/2SD612, 612K] 1 : Emitter 2 : Collector 3 : Base ( ) : 2SB632, 632K JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol 2SB632, D612 2SB632K, D612K Unit Conditions Collector-to-Base Voltage VCBO ()25 ()35 V Collector-to-Emitter Voltage VCEO ()25 ()35 V Emitter-to-Base Voltage VEBO ()5 V Collector Current IC ()2 A Collector Current (Pulse) ICP ()3 A Collector Dissipation PC 1 W Tc=25?C 10 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector-to-Base Breakdown Voltage V(BR)CBO IC=()10A, IE=0 B632, D612 ()25 V B632K, D612K ()35 V Collector-to-Emitter

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Preliminary Datasheet RJH60D6DPK R07DS0164EJ0300 Silicon N Channel IGBT Rev.3.00 Application: Inverter Nov 16, 2010 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ? High speed switching tf = 50 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 40 A, Rg = 5 ?, Ta = 25C, inductive load) Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 1. Gate 2. Collector G 3. Emitter 1 2 3 E Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to emitter voltage / diode reverse voltage VCES / VR 600 V Gate to emitter voltage VGES 30 V Collector current Tc = 25C IC 80 A Tc = 100C IC 40 A Collector peak current ic(peak) Note1 160 A Collector to emitter diode forward current iDF 30 A Collector to emitter diode forwa

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Preliminary Datasheet RJH60D6DPM R07DS0175EJ0200 Silicon N Channel IGBT Rev.2.00 Application: Inverter Nov 16, 2010 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ? High speed switching tf = 50 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 40 A, Rg = 5 ?, Ta = 25C, inductive load) Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C 1. Gate G 2. Collector 3. Emitter E 1 2 3 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to emitter voltage / diode reverse voltage VCES / VR 600 V Gate to emitter voltage VGES 30 V Collector current Tc = 25C IC 80 A Tc = 100C IC 40 A Collector peak current ic(peak) Note1 160 A Collector to emitter diode forward current iDF 30 A Collector to emitter diode forw

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Preliminary Datasheet RJH1CD6DPQ-E0 R07DS0518EJ0300 1200 V - 25 A - IGBT Rev.3.00 Application: Inverter Nov 21, 2011 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (trr = 100 ns typ.) in one package ? Trench gate and thin wafer technology ? High speed switching tf = 100 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 25 A, Rg = 5 ?, Ta = 25C, inductive load) Outline RENESAS Package code: PRSS0003ZE-A (Package name: TO-247) C 4 1. Gate 2. Collector G 3. Emitter 4. Collector 1 2 E 3 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to emitter voltage / diode reverse voltage VCES / VR 1200 V Gate to emitter voltage VGES ?30 V Collector current Tc = 25C IC 50 A Tc = 100C IC 25 A Collector peak current ic(peak) Note1 75 A Collector to emitter diode forward current IDF 25 A Collecto

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Preliminary Datasheet RJH1CD6DPQ-A0 R07DS0452EJ0100 1200 V - 20 A - IGBT Rev.1.00 Application: Inverter Jul 22, 2011 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (trr = 100 ns typ.) in one package ? Trench gate and thin wafer technology ? High speed switching tf = 100 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 20 A, Rg = 5 ?, Ta = 25C, inductive load) Outline RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) C 4 1. Gate 2. Collector G 3. Emitter 4. Collector 1 2 E 3 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to emitter voltage / diode reverse voltage VCES / VR 1200 V Gate to emitter voltage VGES ?30 V Collector current Tc = 25C IC 40 A Tc = 100C IC 20 A Collector peak current ic(peak) Note1 80 A Collector to emitter diode forward current IDF 20 A Collect

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January 2009 FDD6770A N-Channel PowerTrench MOSFET 25 V, 4.0 m? Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 4.0 m? at VGS = 10 V, ID = 24 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 8.0 m? at VGS = 4.5 V, ID = 18.4 A synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast 100% UIL tested switching speed. RoHS Compliant Applications Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture D D G G S D-PAK TO-252 (TO-252) S MOSFET Maximum Ratings TC = 25 C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage 25 V VGS Gate to Source Voltage 20 V Drain Current -Continuous (Package limited) TC = 25 C 50 -Continuous (Silicon limited) TC = 25 C 97 ID A -Continuous TA = 25 C (Note 1a) 24 -Pulsed 200 EAS Single Pulse Avalanche Energy (

1.77. fdd6688_fdu6688.pdf Size:120K _fairchild_semi

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June 2004 FDD6688/FDU6688 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 84 A, 30 V. RDS(ON) = 5 m? @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 6 m? @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Low gate charge low gate charge, low RDS( ON) and fast switching speed. Fast switching Applications High performance trench technology for extremely DC/DC converter low RDS(ON) Motor Drives D D G I-PAK G S (TO-251AA) D-PAK TO-252 G D S (TO-252) S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbo Parameter Ratings Units l VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage 20 ID Drain Current Continuous (Note 3) 84 A Pulsed (Note 1a) 100 PD Power Dissipation for Single Operation (Note 1) 83 W (Note 1a) 3.8 (Note 1b) 1.6 TJ, TSTG Operating and Storage Junction

1.78. fdd6n20_fdu6n20.pdf Size:376K _fairchild_semi

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May 2007 UniFETTM FDD6N20 / FDU6N20 tm N-Channel MOSFET 200V, 4.5A, 0.8? Features Description RDS(on) = 0.6? ( Typ. )@ VGS = 10V, ID = 2.3A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 4.7nC ) stripe, DMOS technology. Low Crss ( Typ. 6.3pF ) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Fast switching performance, and withstand high energy pulse in the avalanche 100% avalanche tested and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor Improved dv/dt capability correction. RoHS compliant D D G G S I-PAK G S D D-PAK FDU Series FDD Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter Ratings Units VDSS Drain to Source Voltage 200 V VGSS Gate to Source Voltage 30 V -Con

1.79. fqd6n60c.pdf Size:678K _fairchild_semi

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QFET FQD6N60C 600V N-Channel MOSFET Features Description 4 A, 600 V, RDS(on) = 2.0 ? @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 16 nC ) stripe, DMOS technology. This advanced technology has been especially tailored to Low Crss ( typical 7 pF) minimize on-state resistance, provide superior switching Fast switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high 100 % avalanche tested efficiency switched mode power supplies, active power factor Improved dv/dt capability correction, electronic lamp ballasts based on half bridge topology. D D ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ^ ^ ^ ^ ^ ^ ^ ^ ? ? ? ? ? ? ? ? G ? ? ? ? ? ? ? ? D-PAK G S FQD Series S Absolute Maximum Ratings Symbol Parameter FQD6N60C Units VDSS Drain-Source Vol

1.80. fdd6n50f_fdu6n50f.pdf Size:648K _fairchild_semi

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July 2007 UniFETTM FDD6N50F / FDU6N50F tm N-Channel MOSFET 500V, 5.5A, 1.15? Features Description RDS(on) = 0.95? ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Failchilds proprietary, planar Low gate charge ( Typ. 15nC) stripe, DMOS technology. Low Crss ( Typ. 6.3pF) This advance technology has been especially tailored to minimize on-state resistance, provide superior switching Fast switching performance, and withstand high energy pulse in the avalanche 100% avalanche tested and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor Improved dv/dt capability correction. RoHS compliant D D G G S I-PAK G S D D-PAK FDU Series FDD Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter Ratings Units VDSS Drain to Source Voltage 500 V VGSS Gate to Source Voltage 30 V -Cont

1.81. fdd6635.pdf Size:199K _fairchild_semi

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February 2007 tm FDD6635 35V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been produced using Fairchild Semiconductors proprietary PowerTrench 59 A, 35 V RDS(ON) = 10 m? @ VGS = 10 V technology to deliver low Rdson and optimized Bvdss RDS(ON) = 13 m? @ VGS = 4.5 V capability to offer superior performance benefit in the Fast Switching applications. RoHS compliant Applications Inverter Power Supplies D D G G S D-PAK TO-252 (TO-252) S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 35 V VDS(Avalanche) Drain-Source Avalanche Voltage (maximum) (Note 4) 40 V VGSS Gate-Source Voltage 20 V ID Continuous Drain Current @TC=25C (Note 3) 59 A @TA=25C (Note 1a) 15 Pulsed (Note 1a) 100 EAS Single Pulse Avalanche Energy (Note 5) 113 mJ PD Power Dissipation @TC=25C (Note 3) 55 W @TA=25C (Note 1a) 3.8 @TA=25C (Note 1b) 1.6

1.82. bd675a_bd677a_bd679a_bd681.pdf Size:39K _fairchild_semi

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BD675A/677A/679A/681 Medium Power Linear and Switching Applications Medium Power Darlington TR Complement to BD676A, BD678A, BD680A and BD682 respectively TO-126 1 NPN Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BD675A 45 V : BD677A 60 V : BD679A 80 V : BD681 100 V VCEO Collector-Emitter Voltage : BD675A 45 V : BD677A 60 V : BD679A 80 V : BD681 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 4 A ICP *Collector Current (Pulse) 6 A IB Base Current 100 mA PC Collector Dissipation (TC=25C) 40 W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units VCEO(sus) *Collector-Emitter Sustaining Voltage : BD675A IC = 50mA, IB = 0 45 V : BD677A 60 V : BD679A 80 V : BD681 100 V IC

1.83. fdd6690a.pdf Size:117K _fairchild_semi

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July 2003 FDD6690A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild 46 A, 30 V RDS(ON) = 12 m? @ VGS = 10 V Semiconductors advanced PowerTrench process that RDS(ON) = 14 m? @ VGS = 4.5 V has been especially tailored to minimize the on state resistance and yet maintain low gate charge for Low gate charge superior switching performance. Fast Switching Speed Applications DC/DC converter High performance trench technology for extremely low RDS(ON) Motor Drives D D G G S D-PAK TO-252 (TO-252) S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage 20 V ID Continuous Drain Current @TC=25C (Note 3) 46 A @TA=25C (Note 1a) 12 Pulsed (Note 1a) 100 PD Power Dissipation @TC=25C (Note 3) 56 W @TA=25C (Note 1a) 3.3 @TA=25C (Note 1b) 1.5 TJ, TSTG Operating and Storage Junction Temperature Range

1.84. fdd6670a.pdf Size:109K _fairchild_semi

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July 2005 FDD6670A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 66 A, 30 V RDS(ON) = 8 m? @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 10 m? @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Low gate charge low gate charge, low RDS ( ON) , fast switching speed and extremely low RDS(ON) in a small package. Fast Switching Applications High performance trench technology for extremely DC/DC converter low RDS(ON) Motor Drives D D G G S D-PAK TO-252 (TO-252) S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage 20 V ID Continuous Drain Current @TC=25C (Note 3) 66 A @TA=25C (Note 1a) 15 Pulsed (Note 1a) 100 PD Power Dissipation @TC=25C (Note 3) 63 W @TA=25C (Note 1a) 3.2 @TA=25C (Note 1b) 1.

1.85. fdd6680.pdf Size:199K _fairchild_semi

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July 1999 FDD6680 N-Channel Logic Level PWM Optimized PowerTrench MOSFET Features General Description This N-Channel Logic level MOSFET has been designed 55 A, 30 V. RDS(on) = 0.010 ? @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(on) = 0.015 ? @ VGS = 4.5 V. converters using either synchronous or conventional switching PWM controllers. Optimized for use in high frequency DC/DC converters. The MOSFET features faster switching and lower gate charge than other MOSFETs with comparable RDS(on) Low gate charge (19nC typical). specifications. The result is a MOSFET that is easier to drive, even at very high frequencies, and DC/DC power Very Fast switching. supply designs with higher overall efficiency. Applications DC/DC converter Motor drives D D G G S S TO-252 Absolute Maximum Ratings T =25oC unless otherwise noted C Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage 20 V ID Maximu

1.86. fdd6780a_fdu6780a_f071.pdf Size:331K _fairchild_semi

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January 2009 FDD6780A / FDU6780A_F071 N-Channel PowerTrench MOSFET 25 V, 8.6 m? Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 8.6 m? at VGS = 10 V, ID = 16.4 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 19.0 m? at VGS = 4.5 V, ID = 12.2 A synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast 100% UIL test switching speed. RoHS Compliant Applications Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture D D G G G D S S Short-Lead I-PAK S D-PAK (TO-251AA) (TO-252) MOSFET Maximum Ratings TC = 25 C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage 25 V VGS Gate to Source Voltage 20 V Drain Current -Continuous (Package limited) TC = 25 C 30 -Continuous (Silicon limited) TC = 25 C 48 ID A -Continuous TA = 25 C (Note 1a) 16.4

1.87. fdd6796a_fdu6796a_f071.pdf Size:319K _fairchild_semi

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March 2009 FDD6796A / FDU6796A_F071 N-Channel PowerTrench MOSFET 25 V, 5.7 m? Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 5.7 m? at VGS = 10 V, ID = 20 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 15.0 m? at VGS = 4.5 V, ID = 15.2 A synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast 100% UIL tested switching speed. RoHS Compliant Applications Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture D D G G G D S S Short-Lead I-PAK S D-PAK (TO-251AA) (TO-252) MOSFET Maximum Ratings TC = 25 C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage 25 V VGS Gate to Source Voltage 20 V Drain Current -Continuous (Package limited) TC = 25 C 40 -Continuous (Silicon limited) TC = 25 C 67 ID A -Continuous TA = 25 C (Note 1a) 20 -P

1.88. fdd6612a_fdu6612a.pdf Size:122K _fairchild_semi

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February 2004 FDD6612A/FDU6612A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 30 A, 30 V RDS(ON) = 20 m? @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 28 m? @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Low gate charge low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package. Fast Switching Applications High performance trench technology for extremely DC/DC converter low RDS(ON) Motor Drives D D G I-PAK G S (TO-251AA) D-PAK TO-252 G D S (TO-252) S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage 20 V ID Continuous Drain Current @TC=25C (Note 3) 30 A @TA=25C (Note 1a) 9.5 Pulsed (Note 1a) 60 PD Power Dissipation @TC=25C (Note 1) 36 W @TA=25

1.89. fqd6n25_fqu6n25.pdf Size:798K _fairchild_semi

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October 2008 QFET FQD6N25 / FQU6N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 4.4A, 250V, RDS(on) = 1.0? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.6 nC) planar stripe, DMOS technology. Low Crss ( typical 7.5 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well RoHS Compliant suited for high efficiency switching DC/DC converters, switch mode power supply. D D G D-PAK I-PAK G S FQD Series G FQU Series D S S AbsoIute Maximum Ratings T = 25C unless otherwise noted SymboI Parameter FQD6N25 / FQU6N25 Units VDSS Drain-Source Voltage 250 V ID Drain Current - Continuous (TC = 25C) 4.4 A

1.90. fdd6030l.pdf Size:117K _fairchild_semi

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August 2003 FDD6030L 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild 12 A, 30 V RDS(ON) = 14.5 m? @ VGS = 10 V Semiconductors advanced PowerTrench process that RDS(ON) = 21 m? @ VGS = 4.5 V has been especially tailored to minimize the on state resistance and yet maintain low gate charge for Low gate charge superior switching performance. Fast Switching Speed Applications DC/DC converter High performance trench technology for extremely low RDS(ON) Motor Drives D D G G S D-PAK TO-252 (TO-252) S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage 20 V ID Continuous Drain Current @TC=25C (Note 3) 50 A @TA=25C (Note 1a) 12 Pulsed (Note 1a) 100 PD Power Dissipation @TC=25C (Note 3) 56 W @TA=25C (Note 1a) 3.2 @TA=25C (Note 1b) 1.5 TJ, TSTG Operating and Storage Junction Temperature Ra

1.91. fdd6637.pdf Size:121K _fairchild_semi

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August 2006 FDD6637 35V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been produced using 55 A, 35 V RDS(ON) = 11.6 m? @ VGS = 10 V Fairchild Semiconductors proprietary PowerTrench RDS(ON) = 18 m? @ VGS = 4.5 V technology to deliver low Rdson and optimized Bvdss High performance trench technology for extremely capability to offer superior performance benefit in the low RDS(ON) applications. RoHS Compliant Applications Inverter Power Supplies D D G G S D-PAK TO-252 S (TO-252) Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 35 V VDS(Avalanche) Drain-Source Avalanche Voltage (maximum) (Note 4) 40 V VGSS Gate-Source Voltage V 25 ID A Continuous Drain Current @TC=25C (Note 3) 55 @TA=25C (Note 1a) 13 Pulsed (Note 1a) 100 PD W Power Dissipation @TC=25C (Note 3) 57 @TA=25C (Note 1a) 3.1 @TA=25C (No

1.92. fdd6778a.pdf Size:313K _fairchild_semi

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January 2009 FDD6778A N-Channel PowerTrench MOSFET 25 V, 14.0 m? Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 14.0 m? at VGS = 10 V, ID = 10.0 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 30.0 m? at VGS = 4.5 V, ID = 9.7 A synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast 100% UIL tested switching speed. RoHS Compliant Applications Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture D D G G S D-PAK TO-252 (TO-252) S MOSFET Maximum Ratings TC = 25 C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage 25 V VGS Gate to Source Voltage 20 V Drain Current -Continuous (Package limited) TC = 25 C 10 -Continuous (Silicon limited) TC = 25 C 30 ID A -Continuous TA = 25 C (Note 1a) 12 -Pulsed 50 EAS Single Pulse Avalanche Energy

1.93. fdd6530a.pdf Size:82K _fairchild_semi

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July 2001 FDD6530A ? 20V N-Channel PowerTrench? MOSFET General Description Features This N-Channel MOSFET has been designed 21 A, 20 V RDS(ON) = 32 m? @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 47 m? @ VGS = 2.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Low gate charge (6.5 nC typical) low gate charge, low RDS( ON) and fast switching speed. Fast switching Applications High performance trench technology for extremely DC/DC converter low RDS(ON) Motor drives . D D G G S TO-252 S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage 8 V ID Drain Current Continuous (Note 3) 21 A Pulsed (Note 1a) 100 PD Power Dissipation (Note 1) 33 W (Note 1a) 3.3 (Note 1b) 1.6 TJ, TSTG Operating and Storage Junction Temperature Range 55 to +175 C Thermal Chara

1.94. fdd6296_fdu6296.pdf Size:105K _fairchild_semi

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June 2004 FDD6296/FDU6296 30V N-Channel Fast Switching PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 50A, 30 V RDS(ON) = 8.8 m? @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 11.3 m? @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Low gate charge low gate charge, low RDS(ON) and fast switching speed. Fast switching Applications DC/DC converter High performance trench technology for extremely low RDS(ON) Power management D D G I-PAK G S (TO-251AA) D-PAK TO-252 G D S (TO-252) S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage 20 ID Continuous Drain Current @TC=25C (Note 3) 50 A @TA=25C (Note 1a) 15 Pulsed (Note 1a) 100 PD Power Dissipation @TC=25C (Note 3) 52 W @TA=25C (Note 1a) 3.8 @TA=25C (Not

1.95. fdd6682_dss20201l.pdf Size:121K _fairchild_semi

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June 2004 FDD6682/FDU6682 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 75 A, 30 V RDS(ON) = 6.2 m? @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 8.0 m? @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Low gate charge low gate charge, low RDS( ON) and fast switching speed. Fast switching Applications High performance trench technology for extremely DC/DC converter low RDS(ON) Motor Drives D D G I-PAK G S (TO-251AA) D-PAK TO-252 G D S (TO-252) S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage 20 ID Drain Current Continuous (Note 3) 75 A Pulsed (Note 1a) 100 PD Power Dissipation for Single Operation (Note 1) 71 W (Note 1a) 3.8 (Note 1b) 1.6 TJ, TSTG Operating and Storage Junction

1.96. fdd6n25_fdu6n25.pdf Size:713K _fairchild_semi

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February 2007 TM UniFET FDD6N25 / FDU6N25 250V N-Channel MOSFET Features Description 4.4A, 250V, RDS(on) = 1.1? @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 4.5 nC) stripe, DMOS technology. Low Crss ( typical 5 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the avalanche Improved dv/dt capability and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D D G D-PAK I-PAK G S FDD Series G FDU Series D S S Absolute Maximum Ratings Symbol Parameter FDD6N25 / FDU6N25 Unit VDSS Drain-Source Voltage 250 V ID Drain Current - Continuous (TC = 25C) A 4.4 - Continuous (TC = 100C) A 2.6 (Note 1) IDM Drain Curr

1.97. fdd6630a.pdf Size:68K _fairchild_semi

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April 2001 FDD6630A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 21 A, 30 V R = 35 m? @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 50 m? @ V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for Low gate charge (5nC typical) low gate charge, low RDS( ON) and fast switching speed. Fast switching Applications High performance trench technology for extremely DC/DC converter low R DS(ON) Motor drives . D D G G S TO-252 S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage 20 V GSS I Drain Current Continuous (Note 3) 21 A D Pulsed (Note 1a) 100 P W D Power Dissipation (Note 1) 28 (Note 1a) 3.2 (Note 1b) 1.3 T , T Operating and Storage Junction Tempera

1.98. bd676a_bd678a_bd680a_bd682.pdf Size:42K _fairchild_semi

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BD676A/678A/680A/682 Medium Power Linear and Switching Applications Medium Power Darlington TR Complement to BD675A, BD677A, BD679A and BD681 respectively TO-126 1 PNP Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BD676A - 45 V : BD678A - 60 V : BD680A - 80 V : BD682 - 100 V VCEO Collector-Emitter Voltage : BD676A - 45 V : BD678A - 60 V : BD680A - 80 V : BD682 - 100 V VEBO Emitter-Base Voltage - 5 V IC Collector Current (DC) - 4 A ICP *Collector Current (Pulse) - 6 A IB Base Current - 100 mA PC Collector Dissipation (TC=25C) 14 W R?ja Thermal Resistance (Junction to Ambient) 88 C/W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units VCEO(sus) Collector-Emitter Sustaining Voltage : BD6

1.99. fdd6685.pdf Size:181K _fairchild_semi

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May 2011 FDD6685 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 40 A, 30 V. RDS(ON) = 20 m? @ VGS = 10 V RDS(ON) = 30 m? @ VGS = 4.5 V Fairchild Semiconductors advanced PowerTrench Fast switching speed process. It has been optimized for power management applications requiring a wide range of gave drive High performance trench technology for extremely low RDS(ON) voltage ratings (4.5V 25V). High power and current handling capability Qualified to AEC Q101 S D G G S TO-252 D Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage V 30 VGSS Gate-Source Voltage 25 V ID 40 Continuous Drain Current @TC=25C (Note 3) @TA=25C (Note 1a) A 11 Pulsed, PW ? 100s (Note 1b) 100 PD Power Dissipation for Single Operation (Note 1) 52 W (Note 1a) 3.8 (Note 1b) 1.6 TJ, TSTG Operating and

1.100. fqd6n40c_fqu6n40c.pdf Size:654K _fairchild_semi

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October 2008 QFET FQD6N40C / FQU6N40C 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 400V, RDS(on) = 1.0 ? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 16nC) planar stripe, DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well RoHS Compliant suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology. D D ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ^ ^ ^ ^ ^ ^ ^ ^ ? ? ? ? ? ? ? ? G ? ? ? ? ? ? ? ? D-PAK I-PAK G S FQD Series FQU Series G D S S Absolute Maximum Ratings TC = 25C unless oth

1.101. fdd6760a.pdf Size:323K _fairchild_semi

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January 2009 FDD6760A N-Channel PowerTrench MOSFET 25 V, 3.2 m? Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 3.2 m? at VGS = 10 V, ID = 27 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 6.0 m? at VGS = 4.5 V, ID = 21 A synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast 100% UIL test switching speed. RoHS Compliant Applications Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture D D G G S D-PAK TO-252 (TO-252) S MOSFET Maximum Ratings TC = 25 C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage 25 V VGS Gate to Source Voltage 20 V Drain Current -Continuous (Package limited) TC = 25 C 50 -Continuous (Silicon limited) TC = 25 C 131 ID A -Continuous TA = 25 C (Note 1a) 27 -Pulsed 200 EAS Single Pulse Avalanche Energy (Note

1.102. fdd6680a.pdf Size:200K _fairchild_semi

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February 2000 FDD6680A ? ? ? ? N-Channel, Logic Level, PowerTrench? MOSFET Features General Description This N-Channel Logic level MOSFET is produced using 56 A, 30 V. RDS(ON) = 0.0095 ? @ VGS = 10 V Fairchild Semiconductor's advanced PowerTrench process RDS(ON) = 0.0130 ? @ VGS = 4.5 V. that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior Low gate charge ( 23nC typical ). switching performance. Fast switching speed. Applications High performance trench technology for extremely low RDS(ON). DC/DC converter Motor drives D D G G S S TO-252 Absolute Maximum Ratings T =25oC unless otherwise noted A Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage 20 V ID Maximum Drain Current - Continuous (Note 1) 56 A (Note 1a) 14 Maximum Drain Current - Pulsed 100 PD Maximum Power Dissipation @ TC = 25oC (Note 1) 60 W TA = 25oC (Note 1a) 2.8 TA = 25oC

1.103. fqd6n50c_fqu6n50c.pdf Size:757K _fairchild_semi

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October 2008 QFET FQD6N50C / FQU6N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 500V, RDS(on) = 1.2 ? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge (typical 19nC) planar stripe, DMOS technology. Low Crss (typical 15pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well RoHS Compliant suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D D ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ^ ^ ^ ^ ^ ^ ^ ^ ? ? ? ? ? ? ? ? G ? ? ? ? ? ? ? ? D-PAK I-PAK G S FQD Series FQU Series G D S S Absolute Maximu

1.104. fdd6680as.pdf Size:327K _fairchild_semi

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April 2008 FDD6680AS tm 30V N-Channel PowerTrench SyncFET General Description Features The FDD6680AS is designed to replace a single 55 A, 30 V RDS(ON) max= 10.5 m? @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) max= 13.0 m? @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low Includes SyncFET Schottky body diode RDS(ON) and low gate charge. The FDD6680AS includes an integrated Schottky diode using Fairchilds monolithic SyncFET technology. The performance of Low gate charge (21nC typical) the FDD6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the High performance trench technology for extremely performance of the FDD6680A in parallel with a low RDS(ON) Schottky diode. High power and current handling capability Applications DC/DC converter . Low side notebook D D G G S TO-252 S Absolute Maximum Rating

1.105. fdd6n50_fdu6n50.pdf Size:851K _fairchild_semi

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January 2006 TM UniFET FDD6N50/FDU6N50 500V N-Channel MOSFET Features Description 6A, 500V, RDS(on) = 0.9? @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 12.8 nC) stripe, DMOS technology. Low Crss ( typical 9 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the avalanche Improved dv/dt capability and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D D G D-PAK I-PAK G S FDD Series FDU Series G D S S Absolute Maximum Ratings Symbol Parameter FDD6N50/FDU6N50 Unit VDSS Drain-Source Voltage 500 V ID Drain Current - Continuous (TC = 25C) 6 A - Continuous (TC = 100C) 3.8 A (Note 1) IDM Drain Current

1.106. ga400td60u.pdf Size:232K _international_rectifier

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PD - 50059C GA400TD60U Ultra-FastTM Speed IGBT "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Features Features Features Features Features VCES = 600V Generation 4 IGBT technology UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 VCE(on) typ. = 1.70V kHz in resonant mode Very low conduction and switching losses @VGE = 15V, IC = 400A HEXFRED antiparallel diodes with ultra- soft recovery Industry standard package UL approved Benefits Increased operating efficiency Direct mounting to heatsink Performance optimized for power conversion: UPS, SMPS, Welding Lower EMI, requires less snubbing Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25C Continuous Collector Current 400 ICM Pulsed Collector CurrentQ 800 A ILM Peak Switching CurrentR 800 IFM Peak Diode Forward Current 800 VGE Gate-to-Emitter Voltage 20 V VISOL RMS Isolation Voltage, Any Terminal To Case,

1.107. ga300td60u.pdf Size:239K _international_rectifier

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PD -50057D GA300TD60U Ultra-FastTM Speed IGBT "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Features VCES = 600V Generation 4 IGBT technology UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 VCE(on) typ. = 1.80V kHz in resonant mode Very low conduction and switching losses @VGE = 15V, IC = 300A HEXFRED antiparallel diodes with ultra- soft recovery Industry standard package UL approved Benefits Increased operating efficiency Direct mounting to heatsink Performance optimized for power conversion: UPS, SMPS, Welding Lower EMI, requires less snubbing Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25C Continuous Collector Current 300 ICM Pulsed Collector Current 600 A ILM Peak Switching Current 600 IFM Peak Diode Forward Current 600 VGE Gate-to-Emitter Voltage 20 V VISOL RMS Isolation Voltage, Any Terminal To Case, t = 1 min 2500 PD @ TC = 25C Maximum Po

1.108. ga500td60u.pdf Size:231K _international_rectifier

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PD - 50048C GA500TD60U Ultra-FastTM Speed IGBT "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Features VCES = 600V Generation 4 IGBT technology UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 VCE(on) typ. = 1.9V kHz in resonant mode Very low conduction and switching losses @VGE = 15V, IC = 500A HEXFRED antiparallel diodes with ultra- soft recovery Industry standard package UL approved Benefits Increased operating efficiency Direct mounting to heatsink Performance optimized for power conversion: UPS, SMPS, Welding Lower EMI, requires less snubbing Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25C Continuous Collector Current 500 ICM Pulsed Collector CurrentQ 1000 A ILM Peak Switching CurrentR 1000 IFM Peak Diode Forward Current 500 VGE Gate-to-Emitter Voltage 20 V VISOL RMS Isolation Voltage, Any Terminal To Case, t = 1 min 2500 PD @ TC = 25C Maximum

1.109. umd6n_imd6a_d6_sot23-6sot363.pdf Size:66K _rohm

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Transistors General purpose (dual digital transistors) UMD6N / IMD6A FFeatures FExternal dimensions (Units: mm) 1) Both the DTA143T chip and DTC143T chip in a UMT or SMT package. 2) Mounting possible with UMT3 or SMT3 automatic mounting ma- chines. 3) Transistor elements are indepen- dent, eliminating interference. 4) Mounting cost and area can be cut in half. FStructure A PNP and a NPN digital transistor (each with a single built in resistor) The following characteristics apply to both DTr1 and DTr2, however, the sign on DTr2 values for the PNP type have been omitted. FAbsolute maximum ratings (Ta = 25_C) (96-467-AC143T) 532 Transistors UMD6N / IMD6A FElectrical characteristics (Ta = 25_C) FPackaging specifications FElectrical characteristic curves FDTr1 (NPN) 533 Transistors UMD6N / IMD6A DTr2 (PNP) 534

1.110. umd6n.pdf Size:67K _rohm

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EMD6 / UMD6N / IMD6A Transistors General purpose (dual digital transistors) EMD6 / UMD6N / IMD6A Features External dimensions (Units : mm) 1) Both the DTA143T chip and DTC143T chip in an EMT EMD6 or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 (4) (3) (5) (2) automatic mounting machines. (6) (1) 1.2 1.6 3) Transistor elements are independent, eliminating interference. Each lead has same dimensions 4) Mounting cost and area can be cut in half. ROHM : EMT6 Abbreviated symbol : D6 Structure UMD6N A PNP and NPN digital transistor (each with a single built in resistor) 1.25 2.1 The following characteristics apply to both the DTr1 and DTr2, however, the - sign on DTr2 values for the PNP 0.1Min. type have been omitted. Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 Abbreviated symbol : D6 Equivalent circuit IMD6A EMD6 / UMD6N IMD6A (4) (5) (6) (3) (2) (1) R1 R1 DTr1 DTr1 DTr2 DTr2 R1=4.7k? R1

1.111. emd6_umd6n_imd6a.pdf Size:67K _rohm

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EMD6 / UMD6N / IMD6A Transistors General purpose (dual digital transistors) EMD6 / UMD6N / IMD6A Features External dimensions (Units : mm) 1) Both the DTA143T chip and DTC143T chip in an EMT EMD6 or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 (4) (3) (5) (2) automatic mounting machines. (6) (1) 1.2 1.6 3) Transistor elements are independent, eliminating interference. Each lead has same dimensions 4) Mounting cost and area can be cut in half. ROHM : EMT6 Abbreviated symbol : D6 Structure UMD6N A PNP and NPN digital transistor (each with a single built in resistor) 1.25 2.1 The following characteristics apply to both the DTr1 and DTr2, however, the - sign on DTr2 values for the PNP 0.1Min. type have been omitted. Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 Abbreviated symbol : D6 Equivalent circuit IMD6A EMD6 / UMD6N IMD6A (4) (5) (6) (3) (2) (1) R1 R1 DTr1 DTr1 DTr2 DTr2 R1=4.7k? R1

1.112. zxmd63p03x.pdf Size:339K _diodes

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ZXMD63P03X DUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.185V; ID=-2.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on-resistance N-channel P-channel Fast switching speed Low threshold Low gate drive Low profile SOIC package APPLICATIONS DC - DC converters Power management functions Disconnect switches Motor control Pin-out ORDERING INFORMATION DEVICE REELSIZE TAPE WIDTH QUANTITY (inches) (mm) PER REEL ZXMD63P03XTA 7 12 embossed 1,000 ZXMD63P03XTC 13 12 embossed 4,000 Top view DEVICE MARKING ZXM63P03 ISSUE 1 - OCTOBER 2005 SEMICONDUCTORS 1 49 ZXMD63P03X ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL P-CHANNEL UNIT Drain-Source Voltage VDSS -30 V Gate- Source Voltage VGS 20 V

1.113. dmp22d6ut.pdf Size:135K _diodes

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DMP22D6UT P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case: SOT-523 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020D Fast Switching Speed Terminals: Finish - Matte Tin annealed over Alloy 42 Leadframe. Low Input/Output Leakage Solderable per MIL-STD-202, Method 208 Lead Free By Design/RoHS Compliant (Note 2) Terminal Connections: See Diagram ESD Protected Gate Marking Information: See Page 3 "Green" Device (Note 4) Ordering Information: See Page 3 Qualified to AEC-Q101 standards for High Reliability Weight: 0.002 grams (approximate) Drain SOT-523 D Gate Gate G S Protection Source Diode ESD PROTECTED TOP VIEW Equivalent Circuit TOP VIEW Maximum Ratings @TA = 25C u

1.114. zxmd63c03x.pdf Size:378K _diodes

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ZXMD63C03X 30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL: V(BR)DSS=30V; RDS(ON)=0.135 ; ID=2.3A P-CHANNEL: V(BR)DSS=-30V; RDS(ON)=0.185 ; ID=-2.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on-resistance N-channel P-channel Fast switching speed Low threshold Low gate drive Low profile SOIC package APPLICATIONS DC - DC converters Power management functions Disconnect switches Motor control Pin-out ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY (inches) (mm) PER REEL ZXMD63C03XTA 7 12 embossed 1,000 ZXMD63C03XTC 13 12 embossed 4,000 DEVICE MARKING Top view ZXM63C03 ISSUE 2 - SEPTEMBER 2007 1 ZXMD63C03X ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL N-CHANNEL P-CHANNEL UNIT Drain

1.115. zxtd618mc.pdf Size:222K _diodes

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A Product Line of Diodes Incorporated ZXTD618MC DUAL 20V NPN LOW SATURATION SWITCHING TRANSISTOR Features and Benefits Mechanical Data BVCEO > 20V Case: DFN3020B-3 IC = 4.5A Continuous Collector Current Case material: Molded Plastic. Green Molding Compound. Low Saturation Voltage (150mV @ 1A) Terminals: Pre-Plated NiPdAu leadframe. RSAT = 47m? for a Low Equivalent On-Resistance UL Flammability Rating 94V-0 hFE specified up to 6A for high current gain hold up Nominal package height: 0.8mm Dual NPN saving footprint and component count Moisture Sensitivity: Level 1 per J-STD-020 Low profile 0.8mm high package for thin applications Weight: 0.013 grams (approximate) R?JA efficient, 40% lower than SOT26 6mm2 footprint, 50% smaller than TSOP6 and SOT26 Lead-Free, RoHS Compliant (Note 1) Applications Halogen and Antimony Free. Green Device (Note 2) DC-DC Converters Qualified to AEC-Q101 Standards for High Rel

1.116. zxmd63p02x.pdf Size:204K _diodes

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ZXMD63P02X DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =-20V; R =0.27 ; I =-1.7A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on-resistance Fast switching speed Low threshold Low gate drive Low profile SOIC package APPLICATIONS DC - DC Converters Power Management Functions Disconnect switches Motor control ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH (mm) QUANTITY (inches) PER REEL ZXMD63P02XTA 7 12mm embossed 1000 units Top View ZXMD63P02XTC 13 12mm embossed 4000 units DEVICE MARKING ZXM63P02 ISSUE 1 - JUNE 2004 1 ZXMD63P02X ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDSS -20 V Gate- Source Voltage VGS 12 V Continuous Drain Current (VGS=

1.117. zxmd63n02x.pdf Size:156K _diodes

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ZXMD63N02X DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =20V; R =0.13?; I =2.4A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on-resistance Fast switching speed Low threshold Low gate drive SOT23 package APPLICATIONS DC - DC Converters Power Management Functions Disconnect switches Motor control ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH (mm) QUANTITY (inches) PER REEL ZXMD63N02XTA 7 12mm embossed 1000 units Top View ZXMD63N02XTC 13 12mm embossed 4000 units DEVICE MARKING ZXM63N02 ISSUE 1 - JUNE 2004 1 ZXMD63N02X ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDSS 20 V Gate- Source Voltage VGS 12 V Continuous Drain Current (VGS=4.5V; TA=25C)

1.118. zxtd6717e6.pdf Size:118K _diodes

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ZXTD6717E6 COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS SUMMARY NPN: VCEO=15V; VCE(sat)=0.1V; IC= 1.5A; PNP: VCEO=-12V; VCE(sat)=-0.175V; IC= -1.25A; DESCRIPTION This new combination device comprises a complementary NPN and PNP low saturation transistor housed in the SOT23-6 package. Users benefit from very efficient performance combining a high current operation, exceptionally low SOT23-6 VCE(sat) and high HFE resulting in extremely low on state losses. This dual transistor is ideal for use in a variety of efficient driving functions including motors, lamps, relays and solenoids and will also benefit circuits requiring high output current switching. FEATURES C2 C1 Low Saturation Voltage RCE(sat) values NPN =135m? at 1.5A - PNP =150m? at 1.25A B2 B1 hFE min 200 at 1A IC=1.5A Continuous (NPN), 1.25A (PNP) E2 E1 SOT23-6 package with PD = 1.1W APPLICATIONS Various driving functions Lamps Motors Relays and solenoids High output current swi

1.119. zxmd63c02x.pdf Size:322K _diodes

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ZXMD63C02X 20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL: V =20V; R =0.13 ; I =2.4A (BR)DSS DS(ON) D P-CHANNEL: V =-20V; R =0.27 ; I =-1.7A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power MSOP8 management applications. FEATURES Low on-resistance Fast switching speed Low threshold Low gate drive Low profile SOIC package N-CHANNEL P-CHANNEL APPLICATIONS DC - DC Converters Power Management Functions Disconnect switches Motor control ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH (mm) QUANTITY (inches) PER REEL Top View ZXMD63C02XTA 7 12mm embossed 1000 units ZXMD63C02XTC 13 12mm embossed 4000 units DEVICE MARKING ZXM63C02 PROVISIONAL ISSUE A - JUNE 1999 1 ZXMD63C02X ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL N-C

1.120. zxtd09n50de6_d619sot23-6.pdf Size:159K _diodes

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ZXTD09N50DE6 E6 SuperSOT DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 160m ; IC= 1A DESCRIPTION A dual NPN low saturation transistor combination contained in a single 6 lead SOT23 package. Each transistor is the equivalent to the ZUMT619 device. FEATURES SOT23-6 Low Equivalent On Resistance Low Saturation Voltage IC=1A Continuous Collector Current C1 C2 SOT23-6 package B1 B2 APPLICATIONS LCD Backlighting inverter circuits Boost functions in DC-DC converters E1 E2 ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY (inches) (mm) PER REEL ZXTD09N50DE6TA 7 8mm embossed 3000 units C1 B1 ZXTD09N50DE6TC 13 8mm embossed 10000 units E1 E2 C2 B2 DEVICE MARKING D619 Top View ISSUE 2 - JUNE 2001 1 ZXTD09N50DE6 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5V Peak Pulse Current ICM 2A Continuous Col

1.121. zxmd63n03x.pdf Size:332K _diodes

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ZXMD63N03X DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.135 ; ID=2.3A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on-resistance Fast switching speed Low threshold D2 D1 Low gate drive Low profile SOIC package G2 G1 APPLICATIONS DC - DC converters S2 S1 Power management functions Disconnect switches Motor control Pin-out ORDERING INFORMATION 1 S1 D1 DEVICE REEL SIZE TAPE WIDTH QUANTITY (inches) (mm) PER REEL G1 D1 S2 D2 ZXM63N03NXTA 7 12 embossed 1,000 G2 D2 ZXM63N03NXTC 13 12 embossed 4,000 Top view DEVICE MARKING ZXM63N03 ISSUE 1 - OCTOBER 2005 SEMICONDUCTORS 1 ZXMD63N03X ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDSS 30 V Gate- Sour

1.122. zxtd617mc.pdf Size:193K _diodes

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A Product Line of Diodes Incorporated ZXTD617MC DUAL 15V NPN LOW SATURATION TRANSISTORS Features and Benefits Mechanical Data BVCEO > 15V Case: DFN3020B-8 IC = 4.5A Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound. Low Saturation Voltage (100mV max @ 1A) Terminals: Pre-Plated NiPdAu leadframe RSAT = 45 m? for a Low Equivalent On-Resistance UL Flammability Rating 94V-0 hFE specified up to 12A for high current gain hold up Nominal Package Height: 0.8mm Dual NPN saving footprint and component count Moisture Sensitivity: Level 1 per J-STD-020 Low profile 0.8mm high package for thin applications Weight: 0.013 grams (approximate) R?JA efficient, 40% lower than SOT26 6mm2 footprint, 50% smaller than TSOP6 and SOT26 Lead-Free, RoHS Compliant (Note 1) Applications Halogen and Antimony Free. Green Device (Note 2) DC-DC Converters Qualified to AEC-Q101 Standards for High Reliabi

1.123. zxtd619mc.pdf Size:216K _diodes

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A Product Line of Diodes Incorporated ZXTD619MC DUAL 50V NPN LOW SATURATION SWITCHING TRANSISTOR Features and Benefits Mechanical Data BVCEO > 50V Case: DFN3020B-8 IC = 4A Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound. Low Saturation Voltage (100mV max @ 1A) Terminals: Pre-Plated NiPdAu leadframe. RSAT = 68m? for Low Equivalent On Resistance UL Flammability Rating 94V-0 hFE specified up to 6A for high current gain holds up Nominal package height: 0.8mm Dual NPN saving footprint and component count Moisture Sensitivity: Level 1 per J-STD-020 Low profile 0.8mm high package for thin applications Weight: 0.013 grams (approximate) R?JA efficient, 40% lower than SOT26 6mm2 footprint, 50% smaller than TSOP6 and SOT26 Lead-Free, RoHS Compliant (Note 1) Applications Halogen and Antimony Free. Green Device (Note 2) DC DC Converters Qualified to AEC-Q101 Standards for High

1.124. ipb65r600c6_ipa65r600c6_ipp65r600c6_ipd65r600c6_ipi65r600c6.pdf Size:2092K _infineon

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MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 ! 4 !GGD+ - 1Y ! .GO=J 2J9FKAKLGJ '.P 0 ! " 9L9 1 @==L 0 =N $AF9D 'F>;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R600C6 1 Descripti?n !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJAF=GF 2=;@FGDG?A=K !GGD+ - 1Y ! K=JA=K ;GE :AF=K L@= =PH=JA=F;= G> L@= D=9ALK G> 9 >9KL KOAL;@AF? 1( + - 1$#2 O@AD= FGL K9;JA>A;AF? =9K= G> MK= #PLJ=E =DQ DGO KOAL;@AF? 9F< ;GF>A;A=FL E GJ= ;GE H9;L DA?@L=J 9F< ;GGD=J Features drain X #PLJ=E =DQ DGO DGKK=K A=< .: >J== HD9LAF? &9DG?=F >J==2) s?urce App

1.125. ipd60r385cp_rev2_2[1].pdf Size:670K _infineon

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IPD60R385CP C??IMOS #:A0< &<,9=4=>:< #<:/?.> %?88,492= 5G W HB@9FF CG<9EJ=F9 FD97=:=98 j Parameter Symb?I C?nditi?ns VaIue Unit W CBG=BHCHF 8E5=B 7HEE9BG 9.0 A D C W 5.7 C W 27 ,H@F98 8E5=B 7HEE9BG2) D pulse C 2 I5@5B7<9 9B9E;L F=B;@9 DH@F9 227 m AS D DD 2) ) 2 0. I5@5B7<9 9B9E;L E9D9G=G=I9 t A D DD A 2) ) I5@5B7<9 7HEE9BG E9D9G=G=I9 t A A A 2 * + /#"0 8v /dt EH;;98B9FF 8v /dt 50 V/ns DS $5G9 FCHE79 IC@G5;9 static 20 V GS f %M 0 W ,CJ9E 8=FF=D5G=CB 8 W tot C + D9E5G=B; 5B8 FGCE5;9 G9AD9E5GHE9 C j stg . 9I D5;9

1.126. ipd65r600c6_2_0.pdf Size:2092K _infineon

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MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 ! 4 !GGD+ - 1Y ! .GO=J 2J9FKAKLGJ '.P 0 ! " 9L9 1 @==L 0 =N $AF9D 'F>;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R600C6 1 Descripti?n !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJAF=GF 2=;@FGDG?A=K !GGD+ - 1Y ! K=JA=K ;GE :AF=K L@= =PH=JA=F;= G> L@= D=9ALK G> 9 >9KL KOAL;@AF? 1( + - 1$#2 O@AD= FGL K9;JA>A;AF? =9K= G> MK= #PLJ=E =DQ DGO KOAL;@AF? 9F< ;GF>A;A=FL E GJ= ;GE H9;L DA?@L=J 9F< ;GGD=J Features drain X #PLJ=E =DQ DGO DGKK=K A=< .: >J== HD9LAF? &9DG?=F >J==2) s?urce App

1.127. ipd60r520cp_rev2.0.pdf Size:647K _infineon

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IPD60R520CP C??IMOSTM #:A0< &<,9=4=>:< #<:/?.> %?88,H / L . ON g 1? X 0.520 !0 DC B6L U 2 AHF6 ADK <6H: 8=6F<: 24 nC g typ U "LHF:B: 9J 9H F6H:9 U %><= E:6@ 8IFF:CH 86E67>A>HM U . I6A>;>:9 688DF9>C< HD '"!" U -7 ;F:: A:69 EA6H>C< / D%0 8DBEA>6CH PG?TO252 ::7!"% # 4= /0=4290/ 1:< U %6F9 GK>H8=>C< 0* -0 HDEDAD<>:G Type Package Marking IPD60 520CP PG?TO252 6 520P !,B48?8 <,>492= 6H X ICA:GG DH=:FK>G: GE:8>;>:9 j Parameter Symb?I C?nditi?ns VaIue Unit X DCH>CIDIG 9F6>C 8IFF:CH 6.8 A D C X 4. C X 17 -IAG:9 9F6>C 8IFF:CH2) D pulse C 3 J6A6C8=: :C:FCH>J: t A D DD A 2) ) 2.5 J6A6C8=: 8IFF:CH F:E:H>H>J: t A A A 3 * , 0#"1 9v /dt FI<<:9C:GG 9v /dt 50 V/ns DS $6H: GDIF8: JDAH6<: static 20 V GS f %N 0 X -DK:F 9>GG>E6H>DC 66 W tot C , E:F6H>C< 6C9 GHDF6<: H:BE:F6HIF: C j stg / :J E6<: IPD60R520CP

1.128. ipd65r600e6_2_0.pdf Size:1867K _infineon

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1.129. ipd640n06l_g_rev1.4.pdf Size:993K _infineon

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% # ! % (>.;?6?@<> %><1A0@ 'A::.>E Features D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?> 4 mW D n) m x P ( 381>>5< 5>81>35=5>C 7 C5=@5A1CDA5 P E1<1>385 A1C54 P *2 6A55 <514 @<1C9>7 + ?", 3?=@<91>C Type #* ( & ! Type Package G? O ? #* ( & ! 4 N G? O ? Marking ".D6:A: >.@6;4? 1C S D><5BB ?C85AF9B5 B@5396954 j Parameter Symb?I C?nditi?ns VaIue Unit ?>C9>D?DB 4A19> 3DAA5>C S 1 D C S 1 C 1) *D 3DAA5>C S 7 D p l e C E1<1>385 5>5A7H B9>7<5 @D 47 t t C ) @5A1C9>7 1>4 BC?A175 C5=@5A1CDA5 S j t # 3<9=1C93 31C57?AH #( # 1) ,55 697DA5 + 5E 4 @175 8? 9?01 % # ! Parameter Symb?I C?nditi?ns VaIues Unit min. typ. max. (52>:.9 05.>.0@2>6?@60? -85A=1< A5B9BC1>35 :D>3C9?> 31B5 ? ? t C ,' E5AB9?> 45E935 ?> * =9>9=1< 6??C@A9>C t ? ? 3= 3??<9>7 1A51

1.130. ipd60r3k3c6_2.0.pdf Size:1347K _infineon

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MOSFET + )>.;?6?@<> & ' ! 1 Descripti?n !FFC+ , 0X @J 8 IP =FI ?@>? MFCK8>< GFNE<; 8::FI;@E> KF K?< JLG@ 0( + , 0$#1 JLGGC@? :C8JJ @EEFM8K@FE 1?< I ; 0( + , 0$#1 N?@C< EFK J8:I@=@:@E> <8J< F= LJ< #OKI 8E; :FE;L:K@FE CFJJ 8GGC@:8K@FEJ ?K? :FDDLK8K@FE IL>><;E s?urce =6; AppIicati?ns -$! JK8> -4+ JK8>

1.131. ipd60r450e6_2_0.pdf Size:2131K _infineon

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MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 # 4 !GGD+ - 1Y # .GO=J 2J9FKAKLGJ '.P 0 # " 9L9 1 @==L 0 =N Final 'F )>.;?6?@<> & ' && ' IPA60R450E6 1 Descripti?n !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJAF=GF 2=;@FGDG?A=K !GGD+ - 1Y # K=JA=K ;GE :AF=K L@= =PH=JA=F;= G> L@= D=9>=J=< <=NA;=K HJGNA<= 9DD :=F=>ALK G> 9 >9KL KOAL;@AF? 1( + - 1$#2 O@AD= FGL K9;JA>A;AF? =9K= G> MK= #PLJ=E =DQ DGO KOAL;@AF? 9F< ;GF>A;A=FL E GJ= ;GE H9;L DA?@L=J 9F< ;GGD=J Features X #PLJ=E =DQ DGO DGKK=K A=< .: >J== HD9LAF? @9DG?=F >J==2) gate =6; AppIicati?ns .$! KL9?=K @

1.132. ipd60r520c6_2.0.pdf Size:917K _infineon

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MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 ! 4 !GGD+ - 1Y ! .GO=J 2J9FKAKLGJ '.P 0 ! " 9L9 1 @==L 0 =N $AF9D 'F )>.;?6?@<> & ' && ' IPA60R520C6 1 Descripti?n !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJAF=GF 2=;@FGDG?A=K !GGD+ - 1Y ! K=JA=K ;GE :AF=K L@= =PH=JA=F;= G> L@= D=9>=J=< <=NA;=K HJGNA<= 9DD :=F=>ALK G> 9 >9KL KOAL;@AF? 1( + - 1$#2 O@AD= FGL K9;JA>A;AF? =9K= G> MK= #PLJ=E =DQ DGO KOAL;@AF? 9F< ;GF>A;A=FL E GJ= ;GE H9;L DA?@L=J 9F< ;GGD=J Features X #PLJ=E =DQ DGO DGKK=K A=< .: >J== HD9LAF? gate =6; AppIicati?ns .$! KL9?=K @9J< KOAL;@AF? .

1.133. ipd60r750e6_2.0_.pdf Size:2043K _infineon

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MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 # 4 !GGD+ - 1Y # .GO=J 2J9FKAKLGJ '.P 0 # " 9L9 1 @==L 0 =N Final 'F )>.;?6?@<> & ' && ' IPA60R750E6 1 Descripti?n !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJAF=GF 2=;@FGDG?A=K !GGD+ - 1Y # K=JA=K ;GE :AF=K L@= =PH=JA=F;= G> L@= D=9>=J=< <=NA;=K HJGNA<= 9DD :=F=>ALK G> 9 >9KL KOAL;@AF? 1( + - 1$#2 O@AD= FGL K9;JA>A;AF? =9K= G> MK= #PLJ=E =DQ DGO KOAL;@AF? 9F< ;GF>A;A=FL E GJ= ;GE H9;L DA?@L=J 9F< ;GGD=J Features X #PLJ=E =DQ DGO DGKK=K A=< .: >J== HD9LAF? @9DG?=F >J==2) gate =6; AppIicati?ns .$! KL9?=K @

1.134. ipw65r660cfd_ipb65r660cfd_ipi65r660cfd_ipa65r660cfd_ipp65r660cfd_ipd65r660cfd.pdf Size:4455K _infineon

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPx65R660CFD Data Sheet Rev. 2.4 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R660CFD, IPB65R660CFD, IPP65R660CFD IPA65R660CFD, IPD65R660CFD, IPI65R660CFD TO-247 D?PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast TO-220 FP DPAK I?PAK switching SJ MOSFET while offering an extremely fast and robust body diode. This combination of extremely low switching, commutation and conduction losses together with highest robustness make especially resonant switching applications more reliable, more efficient, lighter, and cooler. drain

1.135. ipd65r380e6_2_0.pdf Size:1898K _infineon

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MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 # 4 !GGD+ - 1Y # .GO=J 2J9FKAKLGJ '.P 0 # " 9L9 1 @==L 0 =N $AF9D 'F )>.;?6?@<> & ' && ' IPA65R380E6 1 Descripti?n !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJAF=GF 2=;@FGDG?A=K !GGD+ - 1Y # K=JA=K ;GE :AF=K L@= =PH=JA=F;= G> L@= D=9ALK G> 9 >9KL KOAL;@AF? 1( + - 1$#2 O@AD= FGL K9;JA>A;AF? =9K= G> MK= #PLJ=E =DQ DGO KOAL;@AF? 9F< ;GF>A;A=FL E GJ= ;GE H9;L DA?@L=J 9F< ;GGD=J Features X #PLJ=E =DQ DGO DGKK=K A=< .: >J== HD9LAF? &9DG?=F >J==2) gate =6; AppIicati?ns s?urce .$! K

1.136. ipd60r600cp_rev2[1].0.pdf Size:645K _infineon

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IPD60R600CP C??IMOS #:A0< &<,9=4=>:< #<:/?.> %?88,H / L . ON g 1j X 0.6 !0 DC B6L U 2 AHF6 ADK <6H: 8=6F<: 21 nC g typ U "LHF:B: 9J 9H F6H:9 U %><= E:6@ 8IFF:CH 86E67>A>HM U . I6A>;>:9 for industrial grade applications 688DF9>C< HD '"!" U -7 ;F:: A:69 EA6H>C< / D%0 8DBEA>6CH; Halogen free mold compound PG?TO252 ::7!"% # 4= /0=4290/ 1:< U %6F9 GK>H8=>C< 0* -0 HDEDAD<>:G Type Package Marking IPD60 600CP PG?TO252 6 600P !,B48?8 <,>492= 6H X ICA:GG DH=:FK>G: GE:8>;>:9 j Parameter Symb?I C?nditi?ns VaIue Unit X DCH>CIDIG 9F6>C 8IFF:CH 6.1 A D C X .8 C X 15 -IAG:9 9F6>C 8IFF:CH2) D pulse C 3 J6A6C8=: :C:FCH>J: t A D DD A 2) ) 2.2 J6A6C8=: 8IFF:CH F:E:H>H>J: t A A A 3 * , 0#"1 9v /dt FI<<:9C:GG 9v /dt 50 V/ns DS $6H: GDIF8: JDAH6<: static 20 V GS f %N 0 X -DK:F 9>GG>E6H>DC 60 W tot C , E:F6H>C< 6C9

1.137. ipd60r380c6_2_0.pdf Size:1213K _infineon

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MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 ! 4 !GGD+ - 1Y ! .GO=J 2J9FKAKLGJ '.P 0 ! " 9L9 1 @==L 0 =N Final 'FGJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJAF=GF 2=;@FGDG?A=K !GGD+ - 1Y ! K=JA=K ;GE :AF=K L@= =PH=JA=F;= G> L@= D=9ALK G> 9 >9KL KOAL;@AF? 1( + - 1$#2 O@AD= FGL K9;JA>A;AF? =9K= G> MK= #PLJ=E =DQ DGO KOAL;@AF? 9F< ;GF>A;A=FL E GJ= ;GE H9;L DA?@L=J 9F< ;GGD=J Features drain X #PLJ=E =DQ DGO DGKK=K 7< X 4=JQ @A?@ ;GE E ML9LAGF JM??=7< EDEC1) IM9DA>A=< .: >J== HD9LAF? &9DG?=F >J==2) s?urce App

1.138. ipd60r1k4c6_2.0.pdf Size:1322K _infineon

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MOSFET + )>.;?6?@<> & ' ! 1 Descripti?n !FFC+ , 0X @J 8 IP =FI ?@>? MFCK8>< GFNE<; 8::FI;@E> KF K?< JLG@ 0( + , 0$#1 JLGGC@? :C8JJ @EEFM8K@FE 1?< I ; 0( + , 0$#1 N?@C< EFK J8:I@=@:@E> <8J< F= LJ< #OKI 8E; :FE;L:K@FE CFJJ 8GGC@:8K@FEJ ?K? :FDDLK8K@FE IL>><;E s?urce =6; AppIicati?ns -$! JK8> -4+ JK8>

1.139. ipd60r600e6_2_0.pdf Size:1339K _infineon

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R600E6 Data Sheet Rev. 2.0, 2010-04-12 Final Industrial & Multimarket 600V CoolMOS E6 Power Transistor IPD60R600E6, IPP60R600E6 IPD60R600E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. Features Extremely low losses due to very low FOM Rdson*Qg and Eoss drain Very high commutation ruggedness pin 2 Easy to use/drive JEDEC1) qualified, Pb-free plating, halogen free (excluding gate

1.140. ipd60r2k0c6_2.0.pdf Size:1300K _infineon

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MOSFET + )>.;?6?@<> & ' ! 1 Descripti?n !FFC+ , 0X @J 8 IP =FI ?@>? MFCK8>< GFNE<; 8::FI;@E> KF K?< JLG@ 0( + , 0$#1 JLGGC@? :C8JJ @EEFM8K@FE 1?< I ; 0( + , 0$#1 N?@C< EFK J8:I@=@:@E> <8J< F= LJ< #OKI 8E; :FE;L:K@FE CFJJ 8GGC@:8K@FEJ ?K? :FDDLK8K@FE IL>><;E s?urce =6; AppIicati?ns -$! JK8> -4+ JK8>

1.141. ipd60r950c6_2.1.pdf Size:1680K _infineon

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R950C6 Data Sheet Rev. 2.1, 2010-03-11 Final Industrial & Multimarket 600V CoolMOS C6 Power Transistor IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. Features Extremely low losses due to very low FOM Rdson*Qg and Eoss drain Very high commutation ruggedness pin 2 Easy to use/drive Qualified for industrial grade applications acco

1.142. ipd600n25n3grev2.3.pdf Size:486K _infineon

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IPD600N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 250 V N-channel, normal level RDS(on),max 60 mW Excellent gate charge x R product (FOM) DS(on) ID 25 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Halogen-free according to IEC61249-2-21 Ideal for high-frequency switching and synchronous rectification Type IPD600N25N3 G Package PG-TO252-3 Marking 600N25N Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 C Continuous drain current 25 A D C T =100 C 18 C I T =25 C 100 Pulsed drain current2) D,pulse C E Avalanche energy, single pulse I =25 A, R =25 W 210 mJ AS D GS Reverse diode dv /dt dv /dt 10 kV/s V Gate source voltage 20 V GS P T =25 C Power dissipation 136 W tot C T , T Operating and storage temperature -55 ... 175 C j stg IEC climatic

1.143. ipd65r380c62.1.pdf Size:1905K _infineon

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R380C6 Data Sheet Rev. 2.1, 2011-02-17 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPD65R380C6, IPI65R380C6 IPB65R380C6, IPP65R380C6 IPA65R380C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. Features Extremely low losses due to very low FOM Rdson*Qg and Eoss drain pin 2 Very high commutation ruggedness Easy to use/drive gate Qualified for industri

1.144. ipd60r600c6_2_0.pdf Size:1051K _infineon

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MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 ! 4 !GGD+ - 1Y ! .GO=J 2J9FKAKLGJ '.P 0 ! " 9L9 1 @==L 0 =N Final 'FGJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJAF=GF 2=;@FGDG?A=K !GGD+ - 1Y ! K=JA=K ;GE :AF=K L@= =PH=JA=F;= G> L@= D=9>=J=< <=NA;=K HJGNA<= 9DD :=F=>ALK G> 9 >9KL KOAL;@AF? 1( + - 1$#2 O@AD= FGL K9;JA>A;AF? =9K= G> MK= #PLJ=E =DQ DGO KOAL;@AF? 9F< ;GF>A;A=FL E GJ= ;GE H9;L DA?@L=J 9F< ;GGD=J Features X #PLJ=E =DQ DGO DGKK=K 7< X #9KQ LG MK= A=< .: >J== HD9LAF? gate >7< AppIicati?ns .$! KL9?=K @9J< KOAL;@AF?

1.145. mtd6n20e-d.pdf Size:129K _onsemi

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MTD6N20E Power MOSFET 6 A, 200 V, N-Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching http://onsemi.com applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where 6 AMPERES, 200 VOLTS diode speed and commutating safe operating areas are critical and RDS(on) = 460 mW offer additional safety margin against unexpected voltage transients. Features N-Channel Avalanche Energy Specified D Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits G IDSS and VDS(on) Specified at Elevated Temperature These Devices are Pb-Free and are RoHS Compliant S MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating

1.146. ntmd6n02r2-d.pdf Size:74K _onsemi

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NTMD6N02R2 Power MOSFET 6.0 Amps, 20 Volts N-Channel Enhancement Mode Dual SO-8 Package http://onsemi.com Features VDSS RDS(ON) TYP ID MAX Ultra Low RDS(on) 20 V 35 mW @ VGS = 4.5 V 6.0 A Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Dual SOIC-8 Surface Mount Package N-Channel Diode Exhibits High Speed, Soft Recovery D Avalanche Energy Specified SOIC-8 Mounting Information Provided Pb-Free Package is Available G Applications S DC-DC Converters Low Voltage Motor Control Power Management in Portable and Battery-Powered Products, SOIC-8 8 for example, Computers, Printers, Cellular and Cordless Telephones CASE 751 1 STYLE 11 and PCMCIA Cards MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Symbol Value Unit MARKING DIAGRAM Drain-to-Source Voltage VDSS 20 V & PIN ASSIGNMENT Drain-to-Gate Voltage (RGS = 1.0 MW) VDGR 20 V 1 8 Source 1 Drain 1 Gate-to-Source Voltage - Continuous VGS "12 V 2 7 Gate

1.147. ntd6415an.pdf Size:138K _onsemi

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NTD6415AN N-Channel Power MOSFET 100 V, 23 A, 55 mW Features Low RDS(on) High Current Capability http://onsemi.com 100% Avalanche Tested These Devices are Pb-Free and are RoHS Compliant ID MAX V(BR)DSS RDS(on) MAX (Note 1) MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Symbol Value Unit 100 V 55 mW @ 10 V 23 A Drain-to-Source Voltage VDSS 100 V Gate-to-Source Voltage - Continuous VGS $20 V N-Channel Continuous Drain Steady TC = 25C ID 23 A D Current RqJC State TC = 100C 16 Power Dissipation Steady TC = 25C PD 83 W RqJC State G Pulsed Drain Current tp = 10 ms IDM 89 A Operating and Storage Temperature Range TJ, Tstg -55 to C +175 S Source Current (Body Diode) IS 23 A 4 Single Pulse Drain-to-Source Avalanche EAS 79 mJ Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 23 A, L = 0.3 mH, RG = 25 W) 4 Lead Temperature for Soldering TL 260 C 1 Purposes, 1/8? from Case for 10 Seconds 2 1 2 3 3 THERMAL RESISTANCE RATINGS DPAK IPAK

1.148. msd601-rt1-d.pdf Size:42K _onsemi

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MSD601-RT1, MSD601-ST1 Preferred Device NPN General Purpose Amplifier Transistors Surface Mount Features http://onsemi.com Pb-Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS (TA = 25C) Rating Symbol Value Unit Collector - Base Voltage V(BR)CBO 60 Vdc 2 1 BASE EMITTER Collector - Emitter Voltage V(BR)CEO 50 Vdc Emitter - Base Voltage V(BR)EBO 7.0 Vdc MARKING Collector Current - Continuous IC 100 mAdc DIAGRAM Collector Current - Peak IC(P) 200 mAdc THERMAL CHARACTERISTICS 3 Yx M G SC-59 Characteristic Symbol Max Unit G 2 CASE 318D 1 Power Dissipation PD 200 mW Junction Temperature TJ 150 C x = R for RT1 S for ST1 Storage Temperature Tstg -55 ~ +150 C M = Date Code Maximum ratings are those values beyond which device damage can occur. G = Pb-Free Package Maximum ratings applied to the device are individual stress limit values (not (Note: Microdot may be in either location) normal operating conditions) and are not valid simultaneously. I

1.149. ntd6416anl.pdf Size:149K _onsemi

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NTD6416ANL N-Channel Power MOSFET 100 V, 19 A, 74 mW Features Low RDS(on) http://onsemi.com High Current Capability 100% Avalanche Tested These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX MAXIMUM RATINGS (TJ = 25C unless otherwise noted) 100 V 74 mW @ 10 V 19 A Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 100 V D Gate-to-Source Voltage - Continuous VGS $20 V Continuous Drain Steady TC = 25C ID 19 A Current State TC = 100C 13 G Power Dissipation Steady TC = 25C PD 71 W State S Pulsed Drain Current tp = 10 ms IDM 70 A Operating and Storage Temperature Range TJ, Tstg -55 to C 4 +175 4 Source Current (Body Diode) IS 19 A Single Pulse Drain-to-Source Avalanche EAS 50 mJ 2 1 1 Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 3 2 18.2 A, L = 0.3 mH, RG = 25 W) 3 DPAK IPAK Lead Temperature for Soldering TL 260 C CASE 369AA CASE 369D Purposes, 1/8? from Case for 10 Seconds STYLE 2 STYLE 2 THERMAL RESISTANCE RATINGS Parameter

1.150. ntqd6968n.pdf Size:86K _onsemi

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NTQD6968N Power MOSFET 7.0 A, 20 V, Common Drain, Dual N-Channel, TSSOP-8 Features http://onsemi.com Low RDS(on) Higher Efficiency Extending Battery Life V(BR)DSS RDS(on) TYP ID MAX Logic Level Gate Drive 20 V 17 mW @ 4.5 V 7.0 A 3 mm Wide TSSOP-8 Surface Mount Package High Speed, Soft Recovery Diode N-Channel N-Channel TSSOP-8 Mounting Information Provided D D Pb-Free Package is Available Applications Battery Protection Circuits G1 G2 MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Symbol Value Unit S1 S2 Drain-to-Source Voltage VDSS 20 Vdc MARKING DIAGRAM & Gate-to-Source Voltage - Continuous VGS "12 Vdc PIN ASSIGNMENT Drain Current Adc D S2 S2 G2 - Continuous @ TA 25C (Note 1) ID 7.0 8 - Continuous @ TA 70C (Note 1) ID 5.6 - Pulsed (Note 3) IDM 20 E68 1 Total Power Dissipation @ TA 25C (Note 1) PD 1.81 W YWW TSSOP-8 A G Drain Current Adc CASE 948S - Continuous @ TA 25C (Note 2) ID 6.2 PLASTIC - Continuous @ TA

1.151. ntd6414an.pdf Size:137K _onsemi

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NTD6414AN N-Channel Power MOSFET 100 V, 32 A, 37 mW Features Low RDS(on) High Current Capability http://onsemi.com 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS ID MAX Compliant V(BR)DSS RDS(on) MAX (Note 1) MAXIMUM RATINGS (TJ = 25C unless otherwise noted) 100 V 37 mW @ 10 V 32 A Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 100 V N-Channel Gate-to-Source Voltage - Continuous VGS $20 V D Continuous Drain Steady TC = 25C ID 32 A Current RqJC State TC = 100C 22 Power Dissipation Steady TC = 25C PD 100 W RqJC State G Pulsed Drain Current tp = 10 ms IDM 117 A Operating and Storage Temperature Range TJ, Tstg -55 to C S +175 Source Current (Body Diode) IS 32 A 4 Single Pulse Drain-to-Source Avalanche EAS 154 mJ 4 Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 32 A, L = 0.3 mH, RG = 25 W) 1 2 1 Lead Temperature for Soldering TL 260 C 2 3 Purposes, 1/8? from Case for 10 Seconds 3 DPAK IPAK C

1.152. ntmd6601n.pdf Size:95K _onsemi

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NTMD6601NR2G Power MOSFET 80 V, 2.2 A, Dual N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http://onsemi.com Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(on) Max Dual SO-8 Surface Mount Package Saves Board Space ID Max This is a Pb-Free Device 215 mW @ 10 V 80 V 2.2 A 245 mW @ 4.5 V Applications LCD Displays N-Channel MAXIMUM RATINGS (TJ = 25C unless otherwise stated) D Rating Symbol Value Unit Drain-to-Source Voltage VDSS 80 V Gate-to-Source Voltage - Continuous VGS 15 V Continuous Drain TA = 25C ID 1.4 A Current RqJA (Note 1) TA = 70C 1.2 G Power Dissipation TA = 25C PD 1.0 W RqJA (Note 1) Continuous Drain TA = 25C ID 1.1 A S Steady Current RqJA (Note 2) State TA = 70C 0.9 Power Dissipation TA = 25C PD 0.6 W MARKING DIAGRAM RqJA (Note 2) & PIN ASSIGNMENT Continuous Drain TA = 25C ID 2.2 A D1 D1 D2 D2 Current RqJA t < 5 s 8 TA = 70C 1.7 (Note

1.153. ntd60n02r.pdf Size:79K _onsemi

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NTD60N02R Power MOSFET 62 A, 25 V, N-Channel, DPAK Features Planar HD3e Process for Fast Switching Performance http://onsemi.com Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss V(BR)DSS RDS(on) TYP ID MAX Low Gate Charge 25 V 8.4 mW @ 10 V 62 A Optimized for High Side Switching Requirements in High-Efficiency DC-DC Converters Pb-Free Packages are Available N-Channel D MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Symbol Value Unit G Drain-to-Source Voltage VDSS 25 Vdc Gate-to-Source Voltage - Continuous VGS 20 Vdc S Thermal Resistance Junction-to-Case RqJC 2.6 C/W 4 Total Power Dissipation @ TC = 25C PD 58 W 4 Drain Current 4 Continuous @ TC = 25C, Chip ID 62 A Continuous @ TC = 25C, Limited by Package ID 50 A Continuous @ TA = 25C, Limited by Wires ID 32 A 2 1 1 1 3 Thermal Resistance 2 2 3 3 Junction-to-Ambient (Note 1) RqJA 80 C/W Total Power Dissipation @ TA = 25C PD 1.87 W CASE 369A

1.154. ntd6416an.pdf Size:141K _onsemi

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NTD6416AN N-Channel Power MOSFET 100 V, 17 A, 81 mW Features Low RDS(on) High Current Capability http://onsemi.com 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS ID MAX Compliant V(BR)DSS RDS(on) MAX (Note 1) MAXIMUM RATINGS (TJ = 25C unless otherwise noted) 100 V 81 mW @ 10 V 17 A Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 100 V N-Channel Gate-to-Source Voltage - Continuous VGS $20 V D Continuous Drain Steady TC = 25C ID 17 A Current State TC = 100C 11 Power Dissipation Steady TC = 25C PD 71 W State G Pulsed Drain Current tp = 10 ms IDM 62 A S Operating and Storage Temperature Range TJ, Tstg -55 to C +175 Source Current (Body Diode) IS 17 A 4 Single Pulse Drain-to-Source Avalanche EAS 43 mJ 4 Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 17 A, L = 0.3 mH, RG = 25 W) 1 2 1 Lead Temperature for Soldering TL 260 C 2 3 Purposes, 1/8? from Case for 10 Seconds 3 DPAK IPAK THERMAL RESI

1.155. ntmd6p02r2-d.pdf Size:77K _onsemi

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NTMD6P02R2 Preferred Device Power MOSFET 6 Amps, 20 Volts P-Channel SOIC-8, Dual Features Ultra Low RDS(on) Higher Efficiency Extending Battery Life http://onsemi.com Logic Level Gate Drive Miniature Dual SOIC-8 Surface Mount Package 6 AMPERES, 20 VOLTS Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified P-Channel SOIC-8 Mounting Information Provided D Pb-Free Packages are Available Applications Power Management in Portable and Battery-Powered Products, G i.e.: Cellular and Cordless Telephones, and PCMCIA Cards MAXIMUM RATINGS S Rating Symbol Value Unit Drain-to-Source Voltage VDSS -20 V MARKING DIAGRAM & Gate-to-Source Voltage - Continuous VGS "12 V PIN ASSIGNMENT Thermal Resistance - D1 D1 D2 D2 Junction-to-Ambient (Note 1) RqJA 62.5 C/W 8 8 Total Power Dissipation @ TA = 25C PD 2.0 W 1 Continuous Drain Current @ TA = 25C ID -7.8 A E6P02x Continuous Drain Current @ TA = 70C ID -5.7 A SOIC-8 AYWW G Maximu

1.156. ntqd6866r2.pdf Size:144K _onsemi

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NTQD6866R2 Power MOSFET 6.9 Amps, 20 Volts N-Channel TSSOP-8 Features New Low Profile TSSOP-8 Package Ultra Low RDS(on) http://onsemi.com Higher Efficiency Extending Battery Life Logic Level Gate Drive 6.9 AMPERES Diode Exhibits High Speed, Soft Recovery 20 VOLTS Avalanche Energy Specified 30 mW @ VGS = 4.5 V IDSS and VDS(on) Specified at Elevated Temperatures Pb-Free Package is Available N-Channel N-Channel Applications D D Power Management in Portable and Battery-Powered Products, i.e.: Computers, Printers, PCMCIA Cards, Cellular and Cordless Phones Battery Applications NoteBook PC MAXIMUM RATINGS (TC = 25C unless otherwise noted) G1 G2 Rating Symbol Value Unit Drain-to-Source Voltage VDSS 20 Vdc S1 S2 Drain-to-Gate Voltage (RGS = 1.0 MW) VDGR 20 Vdc Gate-to-Source Voltage - Continuous VGS "12 Vdc Thermal Resistance - Single Die MARKING DIAGRAM & Junction-to-Ambient (Note 1) RqJA 62.5 C/W PIN ASSIGNMENT Total Power Dissipation

1.157. ntmsd6n303r2-d.pdf Size:222K _onsemi

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NTMSD6N303R2 Power MOSFET 6 Amps, 30 Volts N-Channel SO-8 FETKYt The FETKY product family incorporates low RDS(on) MOSFETs http://onsemi.com packaged with an industry leading, low forward drop, low leakage Schottky Barrier rectifier to offer high efficiency components in a MOSFET space saving configuration. Independent pinouts for MOSFET and 6.0 AMPERES Schottky die allow the flexibility to use a single component for 30 VOLTS switching and rectification functions in a wide variety of applications. 24 mW @ VGS = 10 V (Typ) Features SCHOTTKY DIODE Pb-Free Packages are Available 6.0 AMPERES 30 VOLTS Applications 420 mV @ IF = 3.0 A Buck Converter 1 8 Buck-Boost A C 2 7 Synchronous Rectification A C 6 Low Voltage Motor Control S D 3 Battery Packs G D 4 5 Chargers (TOP VIEW) Cell Phones MARKING DIAGRAM & PIN ASSIGNMENT MOSFET MAXIMUM RATINGS C C D D (TJ = 25C unless otherwise noted) (Note 1) 8 8 Rating Symbol Value Unit E6N3x

1.158. ntd6600n-d.pdf Size:64K _onsemi

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NTD6600N Power MOSFET 100 V, 12 A, N-Channel, Logic Level DPAK Features Source-to-Drain Diode Recovery Time Comparable to a http://onsemi.com Discrete Fast Recovery Diode Avalanche Energy Specified V(BR)DSS RDS(on) TYP ID MAX Logic Level 100 V 118 mW @ 5.0 V 12 A Pb-Free Packages are Available Typical Applications N-Channel PWM Motor Controls D Power Supplies Converters G MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Symbol Value Unit S Drain-to-Source Voltage VDSS 100 Vdc Drain-to-Source Voltage (RGS = 1.0 MW) VDGR 100 Vdc MARKING Gate-to-Source Voltage DIAGRAMS - Continuous VGS 20 Vdc 4 Drain Current - Continuous @ TA = 25C ID 12 Adc Drain Drain Current - Continuous @ TA =100C ID 9.0 4 Drain Current - Pulsed (Note 3) DPAK IDM 44 Apk CASE 369C Total Power Dissipation PD 56.6 W (Surface Mounted) 2 1 Derate above 25C 0.38 W/C STYLE 2 3 Total Power Dissipation @ TA = 25C (Note 1) 1.76 W Total Power Dissipa

1.159. ntmd6n04r2.pdf Size:78K _onsemi

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NTMD6N04R2 Power MOSFET 40 V, 5.8 A, Dual N-Channel SOIC-8 Features Designed for use in low voltage, high speed switching applications http://onsemi.com Ultra Low On-Resistance Provides Higher Efficiency and Extends Battery Life - RDS(on) = 0.027 W, VGS = 10 V (Typ) VDSS RDS(ON) Typ ID Max - RDS(on) = 0.034 W, VGS = 4.5 V (Typ) 40 V 27 mW @ VGS = 10 V 5.8 A Miniature SOIC-8 Surface Mount Package Saves Board Space Diode is Characterized for Use in Bridge Circuits Diode Exhibits High Speed, with Soft Recovery N-Channel Pb-Free Package is Available D D Applications DC-DC Converters Computers G G Printers Cellular and Cordless Phones S S Disk Drives and Tape Drives MARKING DIAGRAM & MAXIMUM RATINGS (TJ = 25C unless otherwise noted) PIN ASSIGNMENT Rating Symbol Value Unit D1 D1 D2 D2 Drain-to-Source Voltage VDSS 40 V 8 8 Gate-to-Source Voltage - Continuous VGS "20 V 1 E6N04 Drain Current (Note 1) AYWW G SOIC-8 - Continuous @ T

1.160. ntmd6n03r2.pdf Size:160K _onsemi

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NTMD6N03R2 Power MOSFET 30 V, 6 A, Dual N-Channel SOIC-8 Features Designed for use in low voltage, high speed switching applications http://onsemi.com Ultra Low On-Resistance Provides Higher Efficiency and Extends Battery Life VDSS RDS(ON) Typ ID Max - RDS(on) = 0.024 W, VGS = 10 V (Typ) 30 V 24 mW @ VGS = 10 V 6.0 A - RDS(on) = 0.030 W, VGS = 4.5 V (Typ) Miniature SOIC-8 Surface Mount Package Saves Board Space N-Channel Diode is Characterized for Use in Bridge Circuits Diode Exhibits High Speed, with Soft Recovery D D Pb-Free Package is Available Applications G G DC-DC Converters Computers S S Printers Cellular and Cordless Phones MARKING DIAGRAM & Disk Drives and Tape Drives PIN ASSIGNMENT D1 D1 D2 D2 8 8 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) 1 Rating Symbol Value Unit E6N03 AYWW G SOIC-8 Drain-to-Source Voltage VDSS 30 Volts CASE 751 G Gate-to-Source Voltage - Continuous VGS "20 Volts STYLE 11 1 Drain Current

1.161. ntd6415anl-d.pdf Size:259K _onsemi

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NTD6415ANL N--Channel Power MOSFET 100 V, 23 A, 56 m?, Logic Level Features ? Low RDS(on) http://onsemi.com ? 100% Avalanche Tested ? AEC--Q101 Qualified V(BR)DSS RDS(on) MAX ID MAX ? These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS Compliant 56 m? @4.5 V 100 V 23 A 52 m? @10V MAXIMUM RATINGS (TJ =25?C unless otherwise noted) Parameter Symbol Value Unit D Drain--to--Source Voltage VDSS 100 V Gate--to--Source Voltage -- Continuous VGS 20 V Continuous Drain Steady TC =25?C ID 23 A G Current State TC = 100?C 16 Power Dissipation Steady TC =25?C PD 83 W S State Pulsed Drain Current tp =10ms IDM 80 A 4 Operating and Storage Temperature Range TJ, Tstg --55 to ?C +175 2 1 Source Current (Body Diode) IS 23 A 3 Single Pulse Drain--to--Source Avalanche EAS 79 mJ DPAK Energy (VDD =50Vdc, VGS =10Vdc, IL(pk) = CASE 369AA 23 A, L = 0.3 mH, RG =25?) STYLE 2 Lead Temperature for Soldering TL 260 ?C Purposes, 1/8? from Case for 10 Seconds MARKING

1.162. msd602-rt1-d.pdf Size:42K _onsemi

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MSD602-RT1 Preferred Device NPN General Purpose Amplifier Transistor Surface Mount Features http://onsemi.com Pb-Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS (TA = 25C) Rating Symbol Value Unit Collector-Base Voltage V(BR)CBO 60 Vdc Collector-Emitter Voltage V(BR)CEO 50 Vdc Emitter-Base Voltage V(BR)EBO 7.0 Vdc 2 1 Collector Current - Continuous IC 500 mAdc BASE EMITTER Collector Current - Peak IC(P) 1.0 Adc THERMAL CHARACTERISTICS MARKING Characteristic Symbol Max Unit DIAGRAM Power Dissipation PD 200 mW Junction Temperature TJ 150 C 3 WR M G SC-59 Storage Temperature Tstg -55 ~ +150 C G 2 CASE 318D 1 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are WR = Specific Device Code exceeded, device functional operation is not implied, damage may occur and M =

1.163. ntd65n03r-d.pdf Size:73K _onsemi

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NTD65N03R Power MOSFET 25 V, 65 A, Single N-Channel, DPAK Features Low RDS(on) Ultra Low Gate Charge http://onsemi.com Low Reverse Recovery Charge Pb-Free Packages are Available V(BR)DSS RDS(on) TYP ID MAX Applications 6.5 mW @ 10 V 25 V 65 A Desktop CPU Power 9.7 mW @ 4.5 V DC-DC Converters High and Low Side Switch N-Channel D MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 25 V G Gate-to-Source Voltage VGS "20 V Continuous Drain TC = 25C ID 65 A S Current (RqJC) Limited TC = 85C 45 by Die 4 4 Continuous Drain TC = 25C ID 32 A Steady 4 Current (RqJC) Limited State by Wire 2 Power Dissipation TC = 25C PD 50 W 1 1 3 (RqJC) 1 2 2 3 3 Continuous Drain TA = 25C ID 11.4 A CASE 369AA CASE 369D CASE 369AC Current (Note 1) TA = 85C 8.9 Steady DPAK DPAK 3 IPAK State Power Dissipation TA = 25C PD 1.88 W (Bend Lead) (Straight Lead) (Straight Lead) (Note 1) STYLE

1.164. nimd6302r2.pdf Size:158K _onsemi

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NIMD6302R2 HDPlus Dual N-Channel Self-protected Field Effect Transistors with 1:200 Current Mirror FET http://onsemi.com HDPlus devices are an advanced series of power MOSFET which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on-resistance per silicon area while 5.0 AMPERES incorporating smart features. They are capable of withstanding high 30 VOLTS energy in the avalanche and commutation modes. The avalanche RDS(on) = 50 mW energy is specified to eliminate guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. ISOLATED DUAL PACKAGING Drain1 Drain2 This HDPlus device features an integrated Gate-to-Source clamp for ESD protection. Also, this device features a mirror FET for current monitoring. Mirror Main Mirror Main Gate1 Gate2 Features FET FET 3.5% Current Mirror Accuracy in Linear Region 15% Current Mirror Accuracy in Low Current Sa

1.165. mtd6n15-d.pdf Size:70K _onsemi

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MTD6N15 Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This TMOS Power FET is designed for high speed, low loss power switching applications such as switching regulators, converters, http://onsemi.com solenoid and relay drivers. V(BR)DSS RDS(on) MAX ID MAX Features 150 V 0.3 W 6.0 A Silicon Gate for Fast Switching Speeds Low RDS(on) 0.3 W Max N-CHANNEL Rugged SOA is Power Dissipation Limited D Source-to-Drain Diode Characterized for Use With Inductive Loads Low Drive Requirement VGS(th) = 4.0 V Max Surface Mount Package on 16 mm Tape G Pb-Free Package is Available S MAXIMUM RATINGS 4 Rating Symbol Value Unit Drain-Source Voltage VDSS 150 Vdc 2 1 Drain-Gate Voltage (RGS = 1.0 MW) VDGR 150 Vdc 3 Gate-Source Voltage CASE 369C - Continuous VGS 20 Vdc DPAK - Non-Repetitive (tp ? 50 ms) VGSM 40 Vpk (Surface Mount) Drain Current - Continuous ID 6.0 Adc STYLE 2 IDM 20 Drain Current - P

1.166. 2sd637.pdf Size:46K _panasonic

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Transistor 2SD637 Silicon NPN epitaxial planer type For low-power general amplification Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05 Absolute Maximum Ratings (Ta=25?C) 3 2 1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V 2.5 2.5 Emitter to base voltage VEBO 7 V Peak collector current ICP 200 mA 1:Base 2:Collector EIAJ:SC71 Collector current IC 100 mA 3:Emitter M Type Mold Package Collector power dissipation PC 400 mW Junction temperature Tj 150 ?C Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit ICBO VCB = 20V, IE = 0 1 A Collector cutoff current ICEO VCE = 20V, IB = 0 1 A

1.167. 2sd691_2sd692.pdf Size:125K _panasonic

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D6

1.168. 2sd601a_e.pdf Size:43K _panasonic

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Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Unit: mm Complementary to 2SB709A +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine packing. 2 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit 0.1 to 0.3 0.4 0.2 Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 7 V Peak collector current ICP 200 mA 1:Base JEDEC:TO236 2:Emitter EIAJ:SC59 Collector current IC 100 mA 3:Collector Mini Type Package Collector power dissipation PC 200 mW Marking symbol : Z Junction temperature Tj 150 ?C Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit ICBO VCB = 20V, IE = 0

1.169. 2sd602_e.pdf Size:44K _panasonic

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Transistor 2SD602, 2SD602A Silicon NPN epitaxial planer type For general amplification Unit: mm Complementary to 2SB710 and 2SB710A +0.2 Features 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 1 packing. 3 Absolute Maximum Ratings (Ta=25?C) 2 Parameter Symbol Ratings Unit Collector to 2SD602 30 VCBO V base voltage 2SD602A 60 0.1 to 0.3 0.4 0.2 Collector to 2SD602 25 VCEO V emitter voltage 2SD602A 50 Emitter to base voltage VEBO 5 V 1:Base JEDEC:TO236 Peak collector current ICP 1 A 2:Emitter EIAJ:SC59 Collector current IC 500 mA 3:Collector Mini Type Package Collector power dissipation PC 200 mW Marking symbol : W(2SD602) Junction temperature Tj 150 ?C X(2SD602A) Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min t

1.170. 2sd602.pdf Size:40K _panasonic

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Transistor 2SD602, 2SD602A Silicon NPN epitaxial planer type For general amplification Unit: mm Complementary to 2SB710 and 2SB710A +0.2 Features 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 1 packing. 3 Absolute Maximum Ratings (Ta=25?C) 2 Parameter Symbol Ratings Unit Collector to 2SD602 30 VCBO V base voltage 2SD602A 60 0.1 to 0.3 0.4 0.2 Collector to 2SD602 25 VCEO V emitter voltage 2SD602A 50 Emitter to base voltage VEBO 5 V 1:Base JEDEC:TO236 Peak collector current ICP 1 A 2:Emitter EIAJ:SC59 Collector current IC 500 mA 3:Collector Mini Type Package Collector power dissipation PC 200 mW Marking symbol : W(2SD602) Junction temperature Tj 150 ?C X(2SD602A) Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min t

1.171. 2sd601.pdf Size:38K _panasonic

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Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Unit: mm Complementary to 2SB709A +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine packing. 2 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit 0.1 to 0.3 0.4 0.2 Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 7 V Peak collector current ICP 200 mA 1:Base JEDEC:TO236 2:Emitter EIAJ:SC59 Collector current IC 100 mA 3:Collector Mini Type Package Collector power dissipation PC 200 mW Marking symbol : Z Junction temperature Tj 150 ?C Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit ICBO VCB = 20V, IE = 0

1.172. 2sd661.pdf Size:51K _panasonic

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Transistor 2SD661, 2SD661A Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 R0.9 Features Low noise voltage NV. High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit 3 2 1 Collector to 2SD661 35 VCBO V base voltage 2SD661A 55 2.5 2.5 Collector to 2SD661 35 VCEO V emitter voltage 2SD661A 55 1:Base Emitter to base voltage VEBO 7 V 2:Collector EIAJ:SC71 Peak collector current ICP 200 mA 3:Emitter M Type Mold Package Collector current IC 100 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 ?C Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit ICBO VCB = 20V, IE = 0 0.1 A Collector cutoff curren

1.173. 2sd661_e.pdf Size:55K _panasonic

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Transistor 2SD661, 2SD661A Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 R0.9 Features Low noise voltage NV. High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit 3 2 1 Collector to 2SD661 35 VCBO V base voltage 2SD661A 55 2.5 2.5 Collector to 2SD661 35 VCEO V emitter voltage 2SD661A 55 1:Base Emitter to base voltage VEBO 7 V 2:Collector EIAJ:SC71 Peak collector current ICP 200 mA 3:Emitter M Type Mold Package Collector current IC 100 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 ?C Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit ICBO VCB = 20V, IE = 0 0.1 A Collector cutoff curren

1.174. 2sd662_e.pdf Size:43K _panasonic

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Transistor 2SD662, 2SD662B Silicon NPN epitaxial planer type For high breakdown voltage general amplification Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to emitter voltage VCEO. High transition frequency fT. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 Absolute Maximum Ratings (Ta=25?C) 0.55 0.1 0.45 0.05 Parameter Symbol Ratings Unit 3 2 1 Collector to 2SD662 250 VCBO V base voltage 2SD662B 400 2.5 2.5 Collector to 2SD662 200 VCEO V emitter voltage 2SD662B 400 1:Base Emitter to base voltage VEBO 5 V 2:Collector EIAJ:SC71 Peak collector current ICP 100 mA 3:Emitter M Type Mold Package Collector current IC 70 mA Collector power dissipation PC 600 mW Junction temperature Tj 150 ?C Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICEO VCE = 100

1.175. 2sd637_e.pdf Size:51K _panasonic

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Transistor 2SD637 Silicon NPN epitaxial planer type For low-power general amplification Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05 Absolute Maximum Ratings (Ta=25?C) 3 2 1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V 2.5 2.5 Emitter to base voltage VEBO 7 V Peak collector current ICP 200 mA 1:Base 2:Collector EIAJ:SC71 Collector current IC 100 mA 3:Emitter M Type Mold Package Collector power dissipation PC 400 mW Junction temperature Tj 150 ?C Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit ICBO VCB = 20V, IE = 0 1 A Collector cutoff current ICEO VCE = 20V, IB = 0 1 A

1.176. 2sd662.pdf Size:39K _panasonic

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Transistor 2SD662, 2SD662B Silicon NPN epitaxial planer type For high breakdown voltage general amplification Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to emitter voltage VCEO. High transition frequency fT. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 Absolute Maximum Ratings (Ta=25?C) 0.55 0.1 0.45 0.05 Parameter Symbol Ratings Unit 3 2 1 Collector to 2SD662 250 VCBO V base voltage 2SD662B 400 2.5 2.5 Collector to 2SD662 200 VCEO V emitter voltage 2SD662B 400 1:Base Emitter to base voltage VEBO 5 V 2:Collector EIAJ:SC71 Peak collector current ICP 100 mA 3:Emitter M Type Mold Package Collector current IC 70 mA Collector power dissipation PC 600 mW Junction temperature Tj 150 ?C Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICEO VCE = 100

1.177. 2sd638_e.pdf Size:44K _panasonic

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Transistor 2SD638, 2SD639 Silicon NPN epitaxial planer type For medium-power general amplification Unit: mm Complementary to 2SB643 and 2SB644 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 Absolute Maximum Ratings (Ta=25?C) 0.55 0.1 0.45 0.05 Parameter Symbol Ratings Unit Collector to 2SD638 30 VCBO V 3 2 1 base voltage 2SD639 60 Collector to 2SD638 25 VCEO V emitter voltage 2SD639 50 2.5 2.5 Emitter to base voltage VEBO 7 V 1:Base Peak collector current ICP 1 A 2:Collector EIAJ:SC71 Collector current IC 0.5 A 3:Emitter M Type Mold Package Collector power dissipation PC 600 mW Junction temperature Tj 150 ?C Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit ICBO VCB = 20V, IE = 0 0.1 A Collector c

1.178. 2sd693.pdf Size:86K _panasonic

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1.179. d65h2.pdf Size:50K _utc

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UTC D65H2 PNP EXPITAXIAL SILICON TRANSISTOR PNP EXPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC D65H2 is a general purpose power application and switching. FEATURE 1 *Low Collector-Emitter Saturation Voltage VCE(sat)=-1v(MAX)@-15A *Fast Switching Speeds TO-220 1:BASE 2:COLLECTOR 3:EMITTER ABSOLUTE MAXIMUM RATINGS(Ta=25°C) PARAMETER SYMBOL VALUE UNIT Collector to Emitter Voltage VCEO -30 V Emitter To Base Voltage VEBO -5 V Collector Current(DC) IC -15 A Collector Current(Pulse) IC -25 A Collector Dissipation(Tc=25°C) Pc 50 W Collector Dissipation(Ta=25°C) Pc 1.67 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55 ~ +150 °C *PW<=10mS,Duty Cycle<=50% ELECTRICAL CHARACTERISTICS(Ta=25°C) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector Cutoff Current ICES VCE=Rated ; VCEO,VEB=0 -10 µA Emitter Cutoff current IEBO VEB=-5V,Ic=0 -10 µA Collector Emitter Saturation VCE(SAT) IC=-10A,IB=-0.1A 0.6 V Voltage Base Emi

1.180. 2sd667.pdf Size:160K _utc

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UNISONIC TECHNOLOGIES CO., LTD 2SD667 NPN SILICON TRANSISTOR SILICON NPN EPITAXIAL ? DESCRIPTION The UTC 2SD667 is a NPN epitaxial silicon transistor, which can be used as a low frequency power amplifier. ? FEATURES * Low frequency power amplifier ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SD667L-x-T9N-B 2SD667G-x-T9N-B TO-92NL E C B Tape Box 2SD667L-x-T9N-K 2SD667G-x-T9N-K TO-92NL E C B Bulk www.unisonic.com.tw 1 of 4 Copyright © 2013 Unisonic Technologies Co., Ltd QW-R211-019.E 2SD667 NPN SILICON TRANSISTOR ? ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage VCBO 120 V Collector to Emitter Voltage VCEO 80 V Emitter to Base Voltage VEBO 6 V Collector Current IC 1.0 A Collector Peak Current (Note2) ICP 2.0 A Collector Power Dissipation PC 0.9 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.Absolute maximum ratings ar

1.181. std6528s.pdf Size:300K _auk

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STD6528S Semiconductor Semiconductor NPN Silicon Transistor Application • Micom Direct drive and switching Application Features • Very low saturation voltage: VCE(sat)=0.2V (Max.) @ IC=50mA, IB=5mA • High DC current gain: hFE=1000~2500 Ordering Information Type NO. Marking Package Code STD6528S ZA SOT-23 Outline Dimensions unit : mm 2.20~2.60 1.20~1.40 1 3 2 0.20 Min. PIN Connections 1. Base 2. Emitter 3. Collector KSD-T5C038-000 1 1.90 Typ. 2.80~3.00 0.43 Max. 0.90~1.02 0.19 Max. 0.10 Max. STD6528S Absolute Maximum Ratings Ta=25°C Characteristic Symbol Rating Unit Collector-base voltage VCBO 25 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 5 V Collector current IC 150 mA Collector power dissipation PC 200 mW Junction temperature TJ 150 °C Storage temperature range Tstg -55~150 °C Electrical Characteristics Ta=25°C Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-emitter

1.182. std6528ef.pdf Size:319K _auk

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STD6528EF NPN Silicon Transistor Application PIN Connection • Micom Direct drive and switching Application Features 3 • Very low saturation voltage: VCE(sat)=0.2V (Max.) 1 @ IC=50mA, IB=5mA • High DC current gain: hFE=1000~2500 2 • Small size SMD package SOT-523F Ordering Information Type NO. Marking Package Code ZB ? STD6528EF SOT-523F ? ? ?Device Code ? Year&Week Code Absolute Maximum Ratings Ta=25°C Characteristic Symbol Rating Unit Collector-base voltage VCBO 25 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 5 V Collector current IC 150 mA Collector power dissipation PC 150 mW Junction temperature TJ 150 °C Storage temperature range Tstg -55~150 °C Electrical Characteristics Ta=25°C Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-emitter breakdown voltage BVCEO IC=1mA, IB=0 20 - - V Collector cut-off current ICBO VCB=25V, IE=0 - - 0.1 ?A Emitter cut-off current IEBO VEB=5V, IC=0

1.183. bd644-bd646-bd648-bd650-bd652.pdf Size:363K _comset

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SEMICONDUCTORS BD644/646/648/650/652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. NPN complements are BD643, BD645, BD647, BD649 and BD651 ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BD644 45 BD646 60 -VCBO Collector-Base Voltage BD648 80 V BD650 100 BD652 120 BD644 45 BD646 60 -VCEO Collector-Emitter Voltage BD648 80 V BD650 100 BD652 120 BD644 BD646 -VEBO Emitter-Base Voltage BD648 5 V BD650 BD652 BD644 BD646 -IC Collector Current BD648 8 A BD650 BD652 BD644 BD646 -ICM Collector Peak Current BD648 12 A BD650 BD652 Page 1 of 5 SEMICONDUCTORS BD644/646/648/650/652 Symbol Ratings Value Unit BD644 BD646 -IB Base Current BD648 150 mA BD650 BD652 BD644 BD646 PT Power Dissipation @ Tmb < 25 BD648

1.184. bd684_bd683.pdf Size:72K _comset

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PNP BD684 NPN BD683 SILICON DARLINGTON POWER TRANSISTORS The BD684 are PNP eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-126 plastic package. NPN complements are BD683 . ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit -VCEO Collector-Emitter Voltage 120 V -VCBO Collector-Base Voltage 120 V -VEBO Emitter-Base Voltage 5 V -IC 4 -IC Collector Current A -ICM 6 -IB Base current (peak value) -IBM 0.1 A PT Total power Dissipation @ Tmb = 25C 40 Watts TJ Junction Temperature 150 C TStg Storage Temperature -65 to +150 C THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-mb Thermal Resistance, Junction to mouting base 3.12 K/W RthJ-a Thermal Resistance, Junction to ambient in free air 100 K/W COMSET SEMICONDUCTORS 1 PNP BD684 NPN BD683 ELECTRICAL CHARACTERISTICS TC=25C unless otherwise noted M Test Condition(s) Symbol Ratings Min Typ Unit x IE=0 , -VCB=

1.185. bd643-bd645-bd647-bd649-bd651.pdf Size:331K _comset

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SEMICONDUCTORS BD643/645/647/649/651 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BD644, BD646, BD648, BD650 and BD652 ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BD643 60 BD645 80 VCBO Collector-Base Voltage BD647 100 V BD649 120 BD651 140 BD643 45 BD645 60 VCEO Collector-Emitter Voltage BD647 80 V BD649 100 BD651 120 BD643 BD645 VEBO Emitter-Base Voltage BD647 5 V BD649 BD651 BD643 BD645 IC Collector Current BD647 8 A BD649 BD651 BD643 BD645 ICM Collector Peak Current BD647 12 A BD649 BD651 Page 1 of 5 SEMICONDUCTORS BD643/645/647/649/651 Symbol Ratings Value Unit BD643 BD645 IB Base Current BD647 150 mA BD649 BD651 BD643 BD645 PT Power Dissipation @ Tmb < 25 BD647 62.5

1.186. bd675_bd677_bd679_bd681.pdf Size:88K _comset

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NPN BD675/A - BD677/A - BD679/A - BD681/A SILICON DARLINGTON POWER TRANSISTORS The BD675/A-BD677/A-BD679/A-BD681/A are NPN They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-126 plastic package. PNP complements are BD676/A-BD678/A-BD680/A-BD682/A ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BD675/A 45 BD677/A 60 VCEO Collector-Emitter Voltage V BD679/A 80 BD681/A 100 BD675/A 45 BD677/A 60 VCBO Collector-Base Voltage V BD679/A 80 BD681/A 100 VEBO Emitter-Base Voltage 5 V IC 4 IC Collector Current A ICM 6 IB Base current (peak value) IBM 0.1 A PT Total power Dissipation @ Tmb = 25C 40 Watts TJ Junction Temperature 150 C TStg Storage Temperature -65 to +150 C THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-mb Thermal Resistance, Junction to mouting base 3.12 K/W RthJ-a Thermal Resistance, Junction to ambient in free air 100 K/W COMSET SEMICONDUC

1.187. bsm150gd60dlc.pdf Size:136K _eupec

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Technische Information / Technical Information IGBT-Module BSM 150 GD 60 DLC IGBT-Modules Hochstzulassige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 600 V collector-emitter voltage Tc= 55C IC,nom. 150 A Kollektor-Dauergleichstrom DC-collector current Tc= 25C IC 180 A Periodischer Kollektor Spitzenstrom tP= 1ms, Tc= 55C ICRM 300 A repetitive peak collector current Gesamt-Verlustleistung Tc= 25C, Transistor Ptot 570 W total power dissipation Gate-Emitter-Spitzenspannung VGES +/- 20V V gate-emitter peak voltage Dauergleichstrom IF 150 A DC forward current Periodischer Spitzenstrom tP= 1ms IFRM 300 A repetitive peak forw. current Grenzlastintegral der Diode VR= 0V, tp= 10ms, Tvj= 125C 4.800 I2t A2s I2t - value, Diode Isolations-Prufspannung RMS, f= 50Hz, t= 1min. VISOL 2,5 kV insulation test voltage Charakteristische Werte / Characteristic values min. typ. max. Transistor /

1.188. bsm75gd60dlc.pdf Size:215K _eupec

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Technische Information / Technical Information IGBT-Module BSM 75 GD 60 DLC IGBT-Modules Hochstzulassige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 600 V collector-emitter voltage TC = 70 C IC,nom. 75 A Kollektor-Dauergleichstrom DC-collector current TC = 25 C IC 95 A Periodischer Kollektor Spitzenstrom tP = 1 ms, TC = 70C ICRM 150 A repetitive peak collector current Gesamt-Verlustleistung TC=25C, Transistor Ptot 330 W total power dissipation Gate-Emitter-Spitzenspannung VGES +/- 20V V gate-emitter peak voltage Dauergleichstrom IF 75 A DC forward current Periodischer Spitzenstrom tP = 1 ms IFRM 150 A repetitive peak forw. current Grenzlastintegral der Diode VR = 0V, tp = 10ms, TVj = 125C 1.200 I2t A2s I2t - value, Diode Isolations-Prufspannung RMS, f = 50 Hz, t = 1 min. VISOL 2,5 kV insulation test voltage Charakteristische Werte / Characteristic values min. typ. max. Tr

1.189. 2sd666.pdf Size:413K _hitachi

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1.190. 2sd669a.pdf Size:36K _hitachi

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2SD669, 2SD669A Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB649/A Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 2SD669, 2SD669A Absolute Maximum Ratings (Ta = 25C) Ratings Item Symbol 2SD669 2SD669A Unit Collector to base voltage VCBO 180 180 V Collector to emitter voltage VCEO 120 160 V Emitter to base voltage VEBO 55V Collector current IC 1.5 1.5 A Collector peak current IC(peak) 33A Collector power dissipation PC 11W PC*1 20 20 W Junction temperature Tj 150 150 C Storage temperature Tstg 55 to +150 55 to +150 C Note: 1. Value at TC = 25 C. 2 2SD669, 2SD669A Electrical Characteristics (Ta = 25C) 2SD669 2SD669A Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base V(BR)CBO 180 180 V IC = 1 mA, IE = 0 breakdown voltage Collector to emitter V(BR)CEO 120 160 V IC = 10 mA, RBE = ? breakdown voltage Emitter to base V(BR)EBO 5 5 V IE = 1 mA, IC

1.191. 2sd655.pdf Size:29K _hitachi

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2SD655 Silicon NPN Epitaxial Application Low frequency power amplifier, Muting Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SD655 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 15 V Emitter to base voltage VEBO 5V Collector current IC 0.7 A Collector peak current iC(peak) 1.0 A Collector power dissipation PC 500 mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 30 V IC = 10 A, IE = 0 voltage Collector to emitter breakdown V(BR)CEO 15 V IC = 1 mA, RBE = ? voltage Emitter to base breakdown V(BR)EBO 5 V IE = 10 A, IC = 0 voltage Collector cutoff current ICBO 1.0 A VCB = 20 V, IE = 0 Base to emitter voltage VBE 1.0 V VCE = 1 V, IC = 150 mA Collector to emitter saturation VCE(sat) 0.15 0.5

1.192. 2sd667.pdf Size:32K _hitachi

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2SD667, 2SD667A Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB647/A Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD667, 2SD667A Absolute Maximum Ratings (Ta = 25C) Item Symbol 2SD667 2SD667A Unit Collector to base voltage VCBO 120 120 V Collector to emitter voltage VCEO 80 100 V Emitter to base voltage VEBO 55V Collector current IC 11A Collector peak current iC(peak) 22A Collector power dissipation PC 0.9 0.9 W Junction temperature Tj 150 150 C Storage temperature Tstg 55 to +150 50 to +150 C Electrical Characteristics (Ta = 25C) 2SD667 2SD667A Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base V(BR)CBO 120 120 V IC = 10 A, IE = 0 breakdown voltage Collector to emitter V(BR)CEO 80 100 V IC = 1 mA, RBE = ? breakdown voltage Emitter to base V(BR)EBO 5 5 V IE = 10 A, IC = 0 breakdown voltage Collector cutoff current ICBO 10 10

1.193. 2sd669.pdf Size:32K _hitachi

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2SD669, 2SD669A Silicon NPN Epitaxial ADE-208-899 (Z) 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SB649/A Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 2SD669, 2SD669A Absolute Maximum Ratings (Ta = 25C) Ratings Item Symbol 2SD669 2SD669A Unit Collector to base voltage VCBO 180 180 V Collector to emitter voltage VCEO 120 160 V Emitter to base voltage VEBO 55V Collector current IC 1.5 1.5 A Collector peak current IC(peak) 33A Collector power dissipation PC 11W PC*1 20 20 W Junction temperature Tj 150 150 C Storage temperature Tstg 55 to +150 55 to +150 C Note: 1. Value at TC = 25 C. 2 2SD669, 2SD669A Electrical Characteristics (Ta = 25C) 2SD669 2SD669A Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base V(BR)CBO 180 180 V IC = 1 mA, IE = 0 breakdown voltage Collector to emitter V(BR)CEO 120 160 V IC = 10 mA, RBE = ? breakdown voltage Emitter to

1.194. rd60huf1.pdf Size:380K _mitsubishi

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MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD60HUF1 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,60W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3 4-C2 1 FEATURES High power and High Gain: Pout>60W, Gp>7.7dB @Vdd=12.5V,f=520MHz 2 High Efficiency: 55%typ.on UHF Band +0.05 0.1 -0.01 R1.6+/-0.15 3 4.5+/-0.7 APPLICATION 5.0+/-0.3 For output stage of high power amplifiers in UHF 6.2+/-0.7 18.5+/-0.3 Band mobile radio sets. PIN 1.DRAIN RoHS COMPLIANT 2.SOURCE RD60HUF1-101 is a RoHS compliant products. 3.GATE RoHS compliance is indicate by the letter “G” after UNIT:mm the Lot Marking. ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source voltage Vgs=0V 30 V VGSS Gate to source voltage

1.195. 2sd633-35.pdf Size:127K _mospec

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A A A

1.196. 2sd640.pdf Size:91K _no

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1.197. 2sd673a.pdf Size:38K _no

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1.198. umd6n.pdf Size:124K _secos

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UMD6N Dual NPN+PNP Digital Transistors (Built-in Resistors) Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-363 ? DTA143T(PNP) and DTC143T(NPN) transistors are built-in a package. ? Transistor elements are independent, eliminating interference. A ? Mounting cost and area can be cut in half. E L B EQUIVALENT CIRCUIT ?? F C H J D G K Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.00 2.20 G 0.100 REF. B 2.15 2.45 H 0.525 REF. C 1.15 1.35 J 0.08 0.15 D 0.90 1.10 K 8° E 1.20 1.40 L 0.650 TYP. MARKING:D6 F 0.15 0.35 ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Symbol Value Unit Collector-base voltage V(BR)CBO 50 V Collector-emitter voltage V(BR)CEO 50 V Emitter-base voltage V(BR)EBO 5 V Collector current IC 100 mA Collector Power dissipation PC 150 mW Junction & Storage temperature TJ, TSTG 150, -55 ~ 150 ? ABSOLUTE MAXIMUM RATINGS AND ELECTRICAL CHARACTERIS

1.199. ssd60n04-12d.pdf Size:145K _secos

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SSD60N04-12D N-Ch Enhancement Mode Power MOSFET 53A, 40V, RDS(ON) 12m? Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench TO-252(D-Pack) process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable And battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES ? Low RDS(on) provides higher efficiency and extends battery life. ? Low thermal impedance copper leadframe DPAK saves board space. A ? Fast switching speed. C B D ? High performance trench technology. G E PRODUCT SUMMARY PRODUCT SUMMARY K H F N O ID(A) VDS(V) RDS(on) m(?? P ?? M J 12@VGS= 10V 53 Drain 40 14@VGS= 4.5V 49 ?? Millimeter Millimeter REF. REF. Min. Max. Min. Max. Gate A 6.4 6.8 J

1.200. 2sd669-669a.pdf Size:236K _secos

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2SD669/2SD669A NPN Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-126C 2.7± 0.2 7.6±0.2 FEATURES 1.3± 0.2 4.0±0.1 Power dissipation 10.8±0.2 PCM : 1mW(Tamb=25?) O3.1± 0.1 Collector current 1 2 3 2.2±0.1 ICM : 1.5 A 1.27±0.1 Collector-base voltage 15.5±0.2 V(BR)CBO : 180 V 0.76±0.1 Collector-emitter voltage 2.29 Typ. VCEO 0.5± 0.1 2SD669 : 120 V 4.58±0.1 : 160 V 2SD669A Operating and storage junction temperature range 1: Emitter 2: Collector TJ,Tstg: -55? to +150? 3: Base Dimens ions in Millimeters CHARACTERISTICS(Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT 180 Collector-base breakdown voltage V(BR)CBO V Ic= 1mA , IE=0 120 Collector-emitter breakdown voltage V(BR)CEO Ic= 10mA ,IB=0 2SD669 V 160 2SD669A Collector-emitter breakdown voltage V(BR)EBO m IE= 1 A, Ic=0 5 V Collec

1.201. 2sd602,602a.pdf Size:1177K _secos

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2SD602 / 2SD602A NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE Low collector to emitter saturation voltage VCE(sat) A L 3 3 Top View CLASSIFICATION OF hFE (1) C B 1 1 2 Product-Rank 2SD602-Q 2SD602-R 2SD602-S 2 K E Range 85~170 120~240 170~340 D Marking Code WQ1 WR1 WS1 H J F G Product-Rank 2SD602A-Q 2SD602A-R 2SD602A-S Millimeter Millimeter REF. REF. Range 85~170 120~240 170~340 Min. Max. Min. Max. A 2.80 3.04 G 0.09 0.18 B 2.10 2.55 H 0.45 0.60 Marking Code XQ XR XS C 1.20 1.40 J 0.08 0.177 D 0.89 1.15 K 0.6 REF. E 1.78 2.04 L 0.89 1.02 F 0.30 0.50 PACKAGE INFORMATION Collector Package MPQ LeaderSize 3 SOT-23 3K 7’ inch 1 Base 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit 2SD602 30 Collector to Base Voltage V V CBO 2SD602A 60 2SD602 25

1.202. 2sd667a.pdf Size:64K _secos

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2SD667A 1A , 120V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92MOD FEATURES A D Low Frequency Power Amplifier Complementary Pair with 2SB647A B K E F CLASSIFICATION OF hFE (1) C Product-Rank 2SD667A-B 2SD667A-C 2SD667A-D Range 60~120 100~200 160~320 N G H 1 Emitter 1 1 1 2 Collector 2 2 2 3 Base 3 3 3 M J L Collector 2 Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 5.50 6.50 H 1.70 2.05 3 B 8.00 9.00 J 2.70 3.20 C 12.70 14.50 K 0.85 1.15 Base D 4.50 5.30 L 1.60 Max E 0.35 0.65 M 0.00 0.40 F 0.30 0.51 N 4.00 Min 1 G 1.50 TYP. Emitter ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 120 V Collector to Emitter Voltage V 100 V CEO Emitter to Base Voltage V 5 V EBO Collector Current - Continuous I 1 A C Collector Powe

1.203. 2sd601a.pdf Size:52K _secos

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2SD601A 0.1A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE High forward current transfer ratio hFE A L Low collector to emitter saturation voltage VCE(sat) 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 2 K E Product-Rank 2SD601A-Q 2SD601A-R 2SD601A-S Range 160~260 210~340 290~460 D Marking Code ZQ ZR ZS H J F G Millimeter Millimeter PACKAGE INFORMATION REF. REF. Min. Max. Min. Max. A 2.80 3.04 G 0.09 0.18 Package MPQ LeaderSize B 2.10 2.55 H 0.45 0.60 C 1.20 1.40 J 0.08 0.177 SOT-23 3K 7’ inch D 0.89 1.15 K 0.6 REF. E 1.78 2.04 L 0.89 1.02 F 0.30 0.50 Collector 3 1 Base 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage V 60 V CBO Collector to Emitter Voltage V 50 V CEO Emitter to Base Voltage V 7 V EBO Collecto

1.204. gd607_gd608_gd609_ad161_gd617_gd618_gd619_ad162_oc30_2nu73_3nu73_4nu73_5nu73_6nu73_7nu73_2nu72_3nu72_4nu72_5nu72_oc26_oc27_2nu74_3nu74_4nu74_5nu74_6nu74_7nu74_gc500_gc501_gc502_gc510_gc511_gc512.pdf Size:171K _tesla

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1.205. kd501_kd502_kd503_kd601_kd602_kd605_kd606_kd607_kd3055_kd3442_kd3772_kd3773_kd4348_kd615_kd616_kd617.pdf Size:121K _tesla

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1.206. csd655.pdf Size:86K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CSD655 (9AW) TO-92 BCE Marking : As Below ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 30 V Collector -Emitter Voltage VCEO 15 V Emitter Base Voltage VEBO 5.0 V Collector Current IC 700 mA Peak ICP 1.0 A Collector Power Dissipation PC 500 mW Operating And Storage Junction Tj, Tstg -55 to +150 deg C Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector -Base Voltage VCBO IC=10uA, IE=0 30 - - V Collector -Emitter Voltage VCEO IC=10mA, IB=0 15 - - V Emitter Base Voltage VEBO IE=10uA, IC=0 5.0 - - V Collector Cut off Current ICBO VCB=20V, IE=0 - - 1.0 uA Base Emitter Voltage VBE(on) IC=150mA,VCE=1V - - 1.0 V Collector Emitter Saturation Voltage VCE(Sat) IC=500mA,IB=50mA

1.207. cld667_a.pdf Size:118K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS CLD667, CLD667A TO-92 Plastic Package B C E Low Frequency Power Amplifier Complementary CLB647/CLB647A ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL CLD667 CLD667A UNITS VCBO Collector Base Voltage 120 120 V VCEO Collector Emitter Voltage 80 100 V VEBO Emitter Base Voltage 5.0 V Collector Current IC 1.0 A Collector Current Peak ICP 2.0 A PC Collector Power Dissipation 0.9 W Tj Junction Temperature 150 ?C Storage Temperature Tstg - 55 to +150 ?C ABSOLUTE MAXIMUM RATINGS(Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION CLD667 CLD667A UNITS Collector Base Voltage VCBO IC=10µA, IE=0 >120 >120 V Collector Emitter Voltage VCEO IC=1mA, IB=0 >80 >100 V Emitter Base Voltage VEBO IE=10µA, IC=0 >5.0 >5.0 V Collector Cut Off Current ICBO VCB=100V, IE = 0 <10 <10 µA *hFE **VCE=5V,

1.208. cfd611.pdf Size:89K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR CFD611 (9AW) TO-220FP MARKING : CFD 611 B C E Designed for Relay Drive and Motor Drive ABSOLUTE MAXIMUM RATINGS (Ta=25deg C) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 110 V Collector Emitter Voltage VCEO 110 V Emitter Base Voltage VEBO 5.0 V Collector Current IC 6.0 A t=100ms ICP 9.0 A Base Current IB 1.0 A Collector Power Dissipation @ Ta=25 deg C PC 2.0 W Collector Power Dissipation @ Tc=25 deg C 60 W Junction Temperature Tj 150 deg C Storage Temperature Range Tstg -55 to +150 deg C ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector Emitter Voltage VCEO IC=30mA, IB=0 110 - - V Collector Cut off Current ICBO VCB=110V, IE=0 - - 100 uA Emitter Cut off Current IEBO VEB=5V,IC=0 - - 3.0 mA Collector Emitter Saturation Voltage VCE(Sat) IC=5

1.209. csd611.pdf Size:113K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR CSD611 (9AW) TO-220 MARKING : CSD 611 Designed for Relay Drive and Motor Drive ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 110 V Collector Emitter Voltage VCEO 110 V Emitter Base Voltage VEBO 5.0 V Collector Current IC 6.0 A t=100ms ICP 9.0 A Base Current IB 1.0 A Collector Power Dissipation @ Ta=25 deg C PC 2.0 W Collector Power Dissipation @ Tc=25 deg C 60 W Junction Temperature Tj 150 deg C Storage Temperature Range Tstg -55 to +150 deg C ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector Emitter Voltage VCEO IC=30mA, IB=0 110 - - V Collector Cut off Current ICBO VCB=110V, IE=0 - - 100 uA Emitter Cut off Current IEBO VEB=5V,IC=0 - - 3.0 mA Collector Emitter Saturation Voltage VCE(Sat) IC=5A, IB=5mA - -

1.210. bd676_bd678_bd680_bd682_bd684_a.pdf Size:117K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP DARLIGNTON POWER SILICON TRANSISTORS BD676, 676A BD678, 678A BD680, 680A BD682, 684 TO126 Plastic Package E C B For Use As Output Devices In Complementary General Purpose Amplifier Applications. COMPLEMENTARY TO BD675, 675A, 677, 677A, 679, 679A, 681 & 683 BD678, 678A, 680, 680A ARE EQUIVALENT TO MJE700, 702, 703. ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION BD676 BD678 BD680 BD682 BD684 UNIT BD676A BD678A BD680A Collector -Base Voltage VCBO 45 60 80 100 120 V Collector -Emitter Voltage VCEO 45 60 80 100 120 V Emitter Base Voltage VEBO 5.0 V Collector Current IC 4.0 A Base Current IB 0.1 A Collector Power Dissipation @ Tc=25?C PD 40 W Derate above 25?C 0.32 W/?C Operation and Storage Junction Tj,Tstg -55 to +150 ?C Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) 3.13 ?C/W ELECTRICAL CHARACTERIST

1.211. bd675_bd677_bd679_bd681_bd683.pdf Size:176K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER DARLINGTON TRANSISTORS BD675, BD675A BD677, BD677A BD679, BD679A BD681, BD683 TO126 Plastic Package E C B Complementary BD676, 676A, 678, 678A, 680, 680A, 682 & 684 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD675 677 679 681 683 UNITS BD675A 677A 679A VCBO Collector Base Voltage 45 60 80 100 120 V Collector Emitter Voltage VCEO 45 60 80 100 120 V Emitter Base Voltage VEBO 5.0 V Collector Current IC 4.0 A Base Current IB 0.1 A Total Power Dissipation@ Ta=25oC PD 1.25 W Derate above 25?C 10 mW/ ?C Total Power Dissipation@ Tc=25oC PD 40 W Derate above 25?C 0.32 W / ?C Operating & Storage Junction Tj,Tstg - 55 to + 150 ?C Temperature Range THERMAL RESISTANCE From Junction to case Rth(j-c) 3.13 ?C/W Junction to Ambient in free air Rth (j-a) 100 ?C/W ELECTRICAL CHARACTERISTICS (Tc=25?C unless specified otherwise) DESCRIPTION SYMBOLTEST CONDITION

1.212. csb649_a_csd669-a.pdf Size:87K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-126 (SOT-32) Plastic Package CSB649, CSB649A CSD669, CSD669A CSB649, 649A PNP PLASTIC POWER TRANSISTORS CSD669, 669A NPN PLASTIC POWER TRANSISTORS Low frequency Power Amplifier PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ALL DIMENSIONS IN MM ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS 649 649A 649 649A 649 649A 649 649A 649 649A 669 669A 669 669A 669 669A 669 669A 669 669A Collector-base voltage (open emitter) VCBO max. 180 180 V Collector-emitter voltage (open base) VCEO max. 120 160 V Collector current IC max. 1.5 A Total power dissipation up to TC = 25 C PC max. 20 W Junction temperature Tj max. 150 C Collector-emitter saturation voltage IC = 0.5 A; IB = 50 mA VCEsat max. 1.0 V D.C. current gain IC = 150 mA; VCE = 5 V hFE min. 60 60 max. 320 200 RATINGS (at TA

1.213. bd680.pdf Size:27K _jmnic

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Power Transistors www.jmnic.com BD680 Silicon PNP Transistors Features E C B With TO-126 package In monolithic Darlington configuration This transistor is intended for use in medium power linar and switching applications Complement to type BD679 Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 80 V VCEO Collector to emitter voltage 80 V VCER Emitter to base voltage VEB Emitter to base voltage 5 V IB Base Current IC Collector current-Continuous 4 A PD 40 W Total Power Dissipation@TC=25 Tj Junction temperature 150 Tstg Storage temperature -55~150 TO-126 Electrical Characteristics Tc=25 SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA; IB=0 80 V VCBO Collector-Base Voltage ICEO Collector Cutoff Current VCE=40V; IB=0 500 uA ICBO Collector Cutoff Current VCB=80V; IE=0 200 uA IEBO Emitter Cutoff Current VEB=5V; IC=0 2 mA VEBO Emitter Cutoff Current V

1.214. kmb6d6n30q.pdf Size:369K _kec

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SEMICONDUCTOR KMB6D6N30Q TECHNICAL DATA N-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for power management in PC, portable equipment and battery powered systems. H T D P G L FEATURES VDSS=30V, ID=6.6A. A Low Drain-Source ON Resistance. DIM MILLIMETERS : RDS(ON)=28m (typ.) @ VGS=10V A 5.05+0.25/-0.20 : RDS(ON)=56m (typ.) @ VGS=4.5V _ 3.90 + 0.3 B1 8 5 _ B2 6.00 + 0.4 Super High Dense Cell Design. _ D 0.42 0.1 + High Power and Current Handling Capability. _ G 0.15 0.1 B1 B2 + _ H 1.4 0.2 + 1 4 _ L 0.5 0.2 + P 1.27 Typ. _ T 0.20 + 0.05 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VDSS Drain-Source Voltage 30 V FLP-8 (1) VGSS Gate-Source Voltage V 20 ID * DC 6.6 Drain Current A IDP * Pulsed (note1) 26 IS Source-Drain Diode Current 1.7 A PD * Drain Power Dissipation 2.5 W Tj Maximum Junction Temperature 150 Tstg -55 150 Storage Temperature Range Rth

1.215. kmd6d0dn40q.pdf Size:372K _kec

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SEMICONDUCTOR KMD6D0DN40Q TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters. H T D P G L FEATURES A ·VDSS=40V, ID=6A. DIM MILLIMETERS A _ + ·Drain-Source ON Resistance. 4.85 0.2 B1 _ 3.94 + 0.2 RDS(ON)=38m? (Max.) @VGS=10V B2 _ 6.02+ 0.3 8 5 D _ RDS(ON)=50m? (Max.) @VGS=4.5V 0.4 + 0.1 G 0.15+0.1/-0.05 B1 B2 ·Super High Dense Cell Design H _ 1.63+ 0.2 1 4 _ ·Very fast switching L 0.65 0.2 + P 1.27 T 0.20+0.1/-0.05 MAXIMUM RATING (Ta=25? Unless otherwise noted) CHARACTERISTIC SYMBOL RATING UNIT VDSS Drain Source Voltage 40 V FLP-8 VGSS Gate Source Voltage V ±12 ID * Ta=25? 6 A Drain Current Pulsed(Note1) IDP 24 A Peak Diode Recovery dv/dt (Note 2) dv/dt 4.5 V/ns Marking Peak Diode Recovery di/dt di/dt 200 A/us Type Name EAS Sing

1.216. kma3d6n20sa.pdf Size:55K _kec

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SEMICONDUCTOR KMA3D6N20SA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching E time, low on resistance, low gate charge and excellent avalanche L B L DIM MILLIMETERS characteristics. It is mainly suitable for portable equipment. _ + A 2.93 0.20 B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 FEATURES 1 G 1.90 VDSS=20V, ID=3.6A H 0.95 J 0.13+0.10/-0.05 Drain-Source ON Resistance K 0.00 ~ 0.10 L 0.55 RDS(ON)=60m (Max.) @ VGS=4.5V P P M 0.20 MIN RDS(ON)=120m (Max.) @ VGS=2.5V N 1.00+0.20/-0.10 P 7 Super Hige Dense Cell Design M SOT-23 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL N-Ch UNIT VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage V 12 ID DC 3.6 Drain Current A IDP Pulsed 14 KNC IS Drain-Source-Diode Forward Current 1.25 A TA=25 1.25 PD Drain Power Dissipation W TA=70 0.8 Tj Maximum Junction Temperature 150 Tstg -55 150 Storag

1.217. kml0d6np20ea.pdf Size:59K _kec

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SEMICONDUCTOR KML0D6NP20EA TECHNICAL DATA N and P-Ch Trench MOSFET General Description It’s Mainly Suitable for Load Switching Cell Phones, Battery Powered B Systems and Level-Shifter. B1 1 6 DIM MILLIMETERS _ A 1.6 + 0.05 FEATURES _ A1 1.0 + 0.05 2 5 _ ·N-Channel B 1.6 + 0.05 _ B1 1.2 + 0.05 : VDSS=20V, ID=600mA (RDS(ON)=0.70? @ VGS=4.5V). C 0.50 3 4 _ D 0.2 + 0.05 : VDSS=20V, ID=500mA (RDS(ON)=0.85? @ VGS=2.5V). _ H 0.5 + 0.05 _ : VDSS=20V, ID=350mA (RDS(ON)=1.25? @ VGS=1.8V). J 0.12 + 0.05 P P P 5 ·P-Channel : VDSS=-20V, ID=-400mA (RDS(ON)=1.2? @ VGS=-4.5V). : VDSS=-20V, ID=-300mA (RDS(ON)=1.6? @ VGS=-2.5V). 1. Source 1 : VDSS=-20V, ID=-150mA (RDS(ON)=2.7? @ VGS=-1.8V). 2. Gate 1 3. Drain 2 4. Source 2 5. Gate 2 6. Drain 1 TES6 MAXIMUM RATING (Ta=25?) CHARACTERISTIC SYMBOL N-Ch P-Ch UNIT Marking VDSS Drain-Source Voltage 20 -20 V VGSS ±6 ±6 Gate-Source Voltage V Lot No. DC @TA=25? 515 -390 ID* Type Name Drain Current DC @TA

1.218. ktd600k.pdf Size:393K _kec

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SEMICONDUCTOR KTD600K TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW FREQUENCY POWER AMP, A B MEDIUM SPEED SWITCHING APPLICATIONS D C E FEATURES F High breakdown voltage VCEO 120V, high current 1A. Low saturation voltage and good linearity of hFE. G Complementary to KTB631K. H DIM MILLIMETERS J A 8.3 MAX K B 5.8 L C 0.7 _ + D ?3.2 0.1 MAXIMUM RATING (Ta=25 ) E 3.5 _ + F 11.0 0.3 CHARACTERISTIC SYMBOL RATING UNIT G 2.9 MAX M H 1.0 MAX VCBO Collector-Base Voltage 120 V J 1.9 MAX O + _ K 0.75 0.15 N P _ VCEO + Collector-Emitter Voltage 120 V L 15.50 0.5 1 2 3 _ + M 2.3 0.1 _ + N 0.65 0.15 VEBO Emitter-Base Voltage 5 V O 1.6 1. EMITTER P 3.4 MAX 2. COLLECTOR IC 1 3. BASE Collector Current A ICP 2 1.5 Ta=25 Collector Power TO-126 PC W Dissipation 8 Tc=25 Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX.

1.219. kmb7d6np30q.pdf Size:388K _kec

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SEMICONDUCTOR KMB7D6NP30Q TECHNICAL DATA N and P-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for power management in PC, H portable equipment and battery powered systems. T D P G L FEATURES A N-Channel DIM MILLIMETERS : VDSS=30V, ID=7.6A. A 5.05+0.25/-0.20 : RDS(ON)=20m (Max.) @ VGS=10V _ 3.90 + 0.3 B1 8 5 _ B2 6.00 + 0.4 : RDS(ON)=40m (Max.) @ VGS=4.5V _ D 0.42 0.1 + P-Channel _ G 0.15 0.1 B1 B2 + _ + : VDSS=-30V, ID=-5.3A. H 1.4 0.2 1 4 _ L 0.5 0.2 + : RDS(ON)=45m (Max.) @ VGS=-10V P 1.27 Typ. _ : RDS(ON)=60m (Max.) @ VGS=-4.5V T 0.20 + 0.05 Super High Dense Cell Design. Reliable and rugged. FLP-8 (1) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL N-Ch P-Ch UNIT VDSS Drain-Source Voltage 30 -30 V VGSS Gate-Source Voltage V 20 20 ID * DC 7.6 -5.3 Drain Current A IDP Pulsed (note1) 30 -20 IS Source-Drain Diode Current 1.7 -1.7 A PD * Drain Power Dissipation 2 W

1.220. bd645_bd647_bd649_bd651.pdf Size:115K _power-innovations

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BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK MAY 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD646, BD648, BD650 and BD652 TO-220 PACKAGE (TOP VIEW) 62.5 W at 25C Case Temperature 8 A Continuous Collector Current B 1 C 2 Minimum hFE of 750 at 3 V, 3 A E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT BD645 80 BD647 100 Collector-base voltage (IE = 0) VCBO V BD649 120 BD651 140 BD645 60 BD647 80 Collector-emitter voltage (IB = 0) VCEO V BD649 100 BD651 120 Emitter-base voltage VEBO 5 V Continuous collector current IC 8 A Peak collector current (see Note 1) ICM 12 A Continuous base current IB 0.3 A Continuous device dissipation at (or below) 25C case temperature (see Note 2) Ptot 62.5 W Continuous device dissipation at (or below) 25C free air temperature (s

1.221. mld685d.pdf Size:351K _sanken-ele

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http://www.sanken-ele.co.jp SANKEN ELECTRIC MLD685D Feb. 2011 Features Package MT100 (TO3P) Low on-state resistance Built-in gate protection diode Applications Electric power steering High current switching Key Specifications V(BR)DSS=60V (ID=100?A) RDS(ON)=4.7m? Max. (VGS=10V,ID=42A) Internal Equivalent Circuit D(2) G(1) S(3) Absolute maximum ratings Characteristic Symbol Rating Unit Drain to Source Voltage V 60 V DSS Gate to Source Voltage V 20 V GSS Continuous Drain Current I 85 A D ?1 Pulsed Drain Current I 280 A D(pulse) Maximum Power Dissipation P 150 (Tc=25?) W D ?2 Single Pulse Avalanche Energy E 280 mJ AS Channel Temperature Tch -55~150 C Storage Temperature Tstg -55~150 C ?1 PW?100?sec. duty cycle?1% ?2 V =20V, L=1mH, I =20A, unclamped, See Fig.1 DD L The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no responsibility for its use

1.222. mgd623n.pdf Size:227K _sanken-ele

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IGBT MGD623N July, 2009 Features Package----TO-3P Low Saturation Voltage VCE(sat)=1.7V typ. High Speed tf=200ns typ. Low VF FRD Included VF=1.2V typ. Applications Current Resonance Inverter Switching Induction Heating Cooking Equivalent circuit C (2) G (1) E (3) Absolute maximum ratings (Ta=25C) Characteristic Symbol Rating Unit Collector to Emitter Voltage VCES 600 V Gate to Emitter Voltage VGES 30 V Continuous Collector Current IC 50 A Pulsed Collector Current IC(pulse)1) 100 A Diode Continuous Forward Current IF 30 A Diode pulsed Forward Current IF(pulse) 1) 60 A Maximum Power Dissipation PC 150 (Tc=25C) W Thermal Resistance IGBT ?j-c IGBT 0.833 C /W Thermal Resistance Di ?j-c Di 1.67 C /W Junction Temperature Tj 150 C Storage Temperature Tstg -55 to 150 C 1) PW?1ms, Duty cycle?1% Sanken Electric Co.,Ltd. http://www.sanken-ele.co.jp/en/ T04-002EA-090721 IGBT MGD623N July, 2009 Electrical character

1.223. mgd623s.pdf Size:225K _sanken-ele

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IGBT MGD623S July, 2009 Features Package----TO-3P Low Saturation Voltage VCE(sat)=1.8V typ. High Speed tf=120ns typ. Low VF FRD Included VF=1.2V typ. Applications Current Resonance Inverter Switching Induction Heating Cooking Equivalent circuit C (2) G (1) E (3) Absolute maximum ratings (Ta=25C) Characteristic Symbol Rating Unit Collector to Emitter Voltage VCES 600 V Gate to Emitter Voltage VGES 30 V Continuous Collector Current IC 50 A Pulsed Collector Current IC(pulse) 1) 100 A Diode Continuous Forward Current IF 30 A Diode pulsed Forward Current IF(pulse) 1) 60 A Maximum Power Dissipation PC 150 (Tc=25C) W Thermal Resistance IGBT ?j-c IGBT 0.833 C /W Thermal Resistance Di ?j-c Di 1.67 C /W Junction Temperature Tj 150 C Storage Temperature Tstg -55 to 150 C 1) PW?1ms, Duty cycle?1% Sanken Electric Co.,Ltd. http://www.sanken-ele.co.jp/en/ T04-003EA-090721 IGBT MGD623S July, 2009 Electrical charact

1.224. bd646_bd648_bd650_bd652.pdf Size:452K _transys

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1.225. 2sd608.pdf Size:238K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD608 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Complement to Type 2SB628 APPLICATIONS ·Designed for audio frequency power amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak 3.0 A IBB Base Current-Continuous 0.3 A Collector Power Dissipation 1.5 @ Ta=25? PC W Collector Power Dissipation 20 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD608 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN

1.226. bd651.pdf Size:138K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BD651 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Low Saturation Voltage ·Complement to Type BD652 APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICP Collector Current-Peak 12 A IBB Base Current-Continuous 0.3 A Collector Power Dissipation 2 @ Ta=25? PC W Collector Power Dissipation 62.5 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 2 ?/W Rth j-c Thermal Resistance,Junction to Ambient 62.5 ?/W Rth j-

1.227. bd638.pdf Size:255K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD638 DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= -25mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min.) ·Complement to Type BD637 APPLICATIONS ·Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -5 A IBB Base Current-Continuous -0.3 A Collector Power Dissipation 2 @ Ta=25? PC W Collector Power Dissipation 30 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD638 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER

1.228. 2sd640.pdf Size:231K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD640 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V (Max.)@ IC= 5A APPLICATIONS ·High voltage switching applications. ·High power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IBB Base Current-Continuous 2 A Collector Power Dissipation PC @TC=25? 100 W Tj Junction Temperature 150 ? Tstg Storage Temperature Range -65~150 ? isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD640 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown

1.229. bd646.pdf Size:138K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BD646 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Low Saturation Voltage ·Complement to Type BD645 APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICP Collector Current-Peak -12 A IBB Base Current-Continuous -0.3 A Collector Power Dissipation 2 @ Ta=25? PC W Collector Power Dissipation 62.5 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 2 ?/W Rth j-c Thermal Resistance,Junction to Ambient 62.5 ?/W R

1.230. bd675.pdf Size:121K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BD675 DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 45 V ·DC Current Gain— : hFE = 750(Min) @ IC= 1.5 A ·Complement to Type BD676 APPLICATIONS ·Designed for use as output devices in complementary general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IBB Base Current 0.1 A Collector Power Dissipation PC TC=25? 40 W Junction Temperature 150 ? Ti Storage Temperature Range -55~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 3.13 ?/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BD675 ELECTRICAL CHARACTERISTICS

1.231. 2sd673.pdf Size:231K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SD673 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High Power Dissipation- : PC= 60W(Max)@TC=25? ·Complement to Type 2SB653 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 12 A IBB Base Current-Continuous 2 A Collector Power Dissipation PC @TC=25? 60 W TJ Junction Temperature 150 ? Storage Temperature -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SD673 ELECTRICAL CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emit

1.232. 3cd6d.pdf Size:127K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 3CD6D DESCRIPTION ·With TO-3 package ·Low collector saturation voltage APPLICATIONS ·For power amplifier and low speed switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -110 V VCEO Collector-emitter voltage Open base -110 V VEBO Emitter-base voltage Open collector -4 V IC Collector current -5 A PC Collector power dissipation TC=75? 50 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon PNP Power Transistors 3CD6D CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -110 V V(BR)EBO Emitter-base breakdown

1.233. bd676_bd678_bd680.pdf Size:118K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon PNP Darligton Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type BD675/BD677/BD679 Ў¤ DARLINGTON Ў¤ High DC current gain APPLICATIONS Ў¤ For use as output devices in complementary general­purpose amplifier applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION BD676/BD678/BD680 Ў¤ Absolute maximum ratings (Ta=25Ўж ) SYMBOL PARAMETER HAN C BD676 VCBO Collector-base voltage BD678 VCEO IN BD680 GE S Open emitter EMIC CONDITIONS OND TOR UC VALUE -45 -60 -80 -45 UNIT V BD676 BD678 Open base Collector-emitter voltage -60 -80 V BD680 VEBO IC IB PC Tj Tstg Emitter -base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25Ўж Open collector -5 -4 -0.1 40 150 -55~150 Ўж Ўж V A A W THERMAL CHARACTERISTICS SYMBOL Rth j

1.234. bd676a.pdf Size:74K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BD676A DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = -45 V ·DC Current Gain— : hFE = 750(Min) @ IC= -2 A ·Complement to Type BD675A APPLICATIONS ·Designed for use as output devices in complementary general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -45 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A IB Base Current -0.1 A Collector Power Dissipation PC 40 W TC=25? Junction Temperature 150 ? Ti Storage Temperature Range -55~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 3.13 ?/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BD676A ELECTRICAL CHARAC

1.235. bd643.pdf Size:119K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Dalington Power Transistors DESCRIPTION Ў¤ With TO-220C package Ў¤ Complement to type BD644 Ў¤ DARLINGTON APPLICATIONS Ў¤ For use in output stages in audio equipment ,general amplifier,and analogue switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BD643 Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg Collector-base voltage PARAMETER Collector-emitter voltage INCH Base current Emitter-base voltage Collector current-DC ANG SEM E TC=25Ўж Open emitter Open base OND IC CONDITIONS TOR UC VALUE 45 45 5 8 12 150 62.5 150 -55~150 Ўж Ўж UNIT V V V A A A W Open collector Collector current-Pulse Collector power dissipation Junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.5 UNIT Ўж

1.236. 2sd627.pdf Size:147K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD627 DESCRIPTION ·With TO-3 package ·High voltage,high speed APPLICATIONS ·For use in horizontal deflection output stages for color TV receivers PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 3 A ICM Collector current-peak 6 A PC Collector power dissipation TC=25? 50 W Tj Junction temperature 150 ? Tstg Storage temperature -45~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD627 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0 6

1.237. bd677.pdf Size:121K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BD677 DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 60V ·DC Current Gain— : hFE = 750(Min) @ IC= 1.5 A ·Complement to Type BD678 APPLICATIONS ·Designed for use as output devices in complementary general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IBB Base Current 0.1 A Collector Power Dissipation PC TC=25? 40 W Junction Temperature 150 ? Ti Storage Temperature Range -55~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 3.13 ?/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BD677 ELECTRICAL CHARACTERISTICS

1.238. 2sd634.pdf Size:234K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD634 DESCRIPTION ·High DC Current Gain : hFE= 2000(Min.) @IC= 3.0A ·Low Saturation Voltage : VCE(sat)= 1.5V(Max.)@ IC= 3.0A ·Complement to Type 2SB674 APPLICATIONS ·High power switching applications. ·Hammer drive, pulse motor drive applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IBB Base Current-Continuous 0.2 A Collector Power Dissipation PC @ TC=25? 40 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD634 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

1.239. bd637.pdf Size:255K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD637 DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 25mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min.) ·Complement to Type BD638 APPLICATIONS ·Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak 5 A IBB Base Current-Continuous 0.3 A Collector Power Dissipation 2 @ Ta=25? PC W Collector Power Dissipation 30 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD637 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITI

1.240. 2sd600_2sd600k.pdf Size:195K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD600 2SD600K DESCRIPTION · ·With TO-126 package ·Complement to type 2SB631/631K ·High breakdown voltage VCEO100/120V ·High current 1A ·Low saturation voltage APPLICATIONS ·For low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SD600 100 VCBO Collector-base voltage Open emitter V 2SD600K 120 2SD600 100 VCEO Collector-emitter voltage Open base V 2SD600K 120 VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 1 A ICM Collector current-peak 2 A Ta=25? 1 PD Total power dissipation W TC=25? 8 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD600 2SD600K CHARACTERISTICS Tj=25? unless otherw

1.241. 2sd689.pdf Size:131K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD689 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 1A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1A ·Complement to Type 2SB679 APPLICATIONS ·Low frequency medium power amplifier and medium speed switching applications. ·Pulse motor driver, relay drive and hammer drive applications. ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 1.5 A Collector Power Dissipation PC TC=25? 10 W Tj Junction Temperature 150 ? Tstg Storage Temperature Range -55~150 ? isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD689 ELECTRICAL CHAR

1.242. 2sd600.pdf Size:164K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD600 DESCRIPTION ·High Collector Current-IC= 1.0A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SB631 APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A ICP Collector Current-Pulse 2 A Collector Power Dissipation 8 @ TC=25? PC W Collector Power Dissipation 1 @ Ta=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD600 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. M

1.243. 2sd686.pdf Size:117K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD686 DESCRIPTION Ў¤ With TO-220C package Ў¤ Complement to type 2SB676 Ў¤ DARLINGTON Ў¤ High DC current gain APPLICATIONS Ў¤ Switching applications Ў¤ Hammer drive,pulse motor drive Ў¤ Power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base DESCRIPTION Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH Emitter CONDITIONS VALUE 100 80 5 4 TC=25Ўж 30 150 -50~150 Collector-base voltage Open emitter Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Open base Open collector UNIT V V V A W Ўж Ўж

1.244. bd647.pdf Size:138K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BD647 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Low Saturation Voltage ·Complement to Type BD648 APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICP Collector Current-Peak 12 A IBB Base Current-Continuous 0.3 A Collector Power Dissipation 2 @ Ta=25? PC W Collector Power Dissipation 62.5 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 2 ?/W Rth j-c Thermal Resistance,Junction to Ambient 62.5 ?/W Rth j-a

1.245. bd634.pdf Size:229K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD634 DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= -25mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min.) ·Complement to Type BD633 APPLICATIONS ·Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -45 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -5 A IBB Base Current-Continuous -0.3 A Collector Power Dissipation 2 @ Ta=25? PC W Collector Power Dissipation 30 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD634 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER

1.246. 2sd669_2sd669a.pdf Size:280K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD669 2SD669A DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type 2SB649/649A Ў¤ High breakdown voltage VCEO:120/160V Ў¤ High current 1.5A Ў¤ Low saturation voltage,excellent hFE linearity APPLICATIONS Ў¤ For low-frequency power amplifier applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL PARAMETER VCBO TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 180 2SD669 Collector-base voltage Open emitter 2SD669A 2SD669 180 120 Open base 2SD669A 160 Open collector 5 1.5 3 Ta=25Ўж 1 Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak UNIT V VCEO V VEBO IC ICM V A A PD Total power dissipation TC=25Ўж 20 150 -55~150 Ўж Ўж W Tj Tstg Junction temperature Storage temperature

1.247. bd675a.pdf Size:121K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BD675A DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 45 V ·DC Current Gain— : hFE = 750(Min) @ IC= 2 A ·Complement to Type BD676A APPLICATIONS ·Designed for use as output devices in complementary general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IBB Base Current 0.1 A Collector Power Dissipation PC TC=25? 40 W Junction Temperature 150 ? Ti Storage Temperature Range -55~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 3.13 ?/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BD675A ELECTRICAL CHARACTERISTIC

1.248. bd649.pdf Size:138K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BD649 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Low Saturation Voltage ·Complement to Type BD650 APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICP Collector Current-Peak 12 A IBB Base Current-Continuous 0.3 A Collector Power Dissipation 2 @ Ta=25? PC W Collector Power Dissipation 62.5 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 2 ?/W Rth j-c Thermal Resistance,Junction to Ambient 62.5 ?/W Rth j-

1.249. 2sd613.pdf Size:89K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD613 DESCRIPTION · ·With TO-220C package ·Complement to type 2SB633 ·High breakdown voltage :VCEO=85V ·High current 6A APPLICATIONS ·Recommend for 25-35W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Tc=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 85 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 6 A ICM Collector current-peak 10 A PC Collector power dissipation TC=25? 40 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD613 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collect

1.250. bd652.pdf Size:138K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BD652 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Low Saturation Voltage ·Complement to Type BD651 APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICP Collector Current-Peak -12 A IBB Base Current-Continuous -0.3 A Collector Power Dissipation 2 @ Ta=25? PC W Collector Power Dissipation 62.5 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 2 ?/W Rth j-c Thermal Resistance,Junction to Ambient 62.5 ?/W

1.251. bd645.pdf Size:138K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BD645 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Low Saturation Voltage ·Complement to Type BD646 APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICP Collector Current-Peak 12 A IBB Base Current-Continuous 0.3 A Collector Power Dissipation 2 @ Ta=25? PC W Collector Power Dissipation 62.5 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 2 ?/W Rth j-c Thermal Resistance,Junction to Ambient 62.5 ?/W Rth j-a

1.252. bd633.pdf Size:255K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD633 DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 25mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min.) ·Complement to Type BD634 APPLICATIONS ·Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak 5 A IBB Base Current-Continuous 0.3 A Collector Power Dissipation 2 @ Ta=25? PC W Collector Power Dissipation 30 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD633 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIO

1.253. bd635.pdf Size:255K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD635 DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 25mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Complement to Type BD636 APPLICATIONS ·Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak 5 A IBB Base Current-Continuous 0.3 A Collector Power Dissipation 2 @ Ta=25? PC W Collector Power Dissipation 30 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD635 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIO

1.254. bd676a_678a_680a_682.pdf Size:118K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type BD675A/677A/679A/681 Ў¤ DARLINGTON Ў¤ High DC current gain APPLICATIONS Ў¤ For medium power linear and switching applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION BD676A/678A/680A/682 Ў¤ Absolute maximum ratings (Ta=25Ўж ) SYMBOL PARAMETER CONDITIONS BD676A BD678A VCBO HAN INC Collector-emitter voltage Emitter -base voltage Collector current Collector current-Peak Base current Collector power dissipation Junction temperature Storage temperature Collector-base voltage BD680A BD682 GE S Open emitter EMIC OND TOR UC VALUE -45 -60 -80 -100 -45 -60 UNIT V BD676A BD678A Open base BD680A VCEO V -80 -100 BD682 VEBO IC ICM IB PC Tj Tstg Open collector -5 -4 -6 -0.1 V A A A W Ўж Ўж TC=25Ўж 40 150 -65~150

1.255. bd644.pdf Size:105K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BD644 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Low Saturation Voltage ·Complement to Type BD643 APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICP Collector Current-Peak -12 A IBB Base Current-Continuous -0.3 A Collector Power Dissipation 2 @ Ta=25? PC W Collector Power Dissipation 62.5 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 2 ?/W Rth j-c Thermal Resistance,Junction to Ambient 62.5 ?/W R

1.256. 2sd684.pdf Size:314K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD684 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min) ·High DC Current Gain- : hFE= 1500(Min.)@IC= 2A ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 4A APPLICATIONS ·Igniter applications. ·High voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IBB Base Current-Continuous 1 A Collector Power Dissipation PC @ TC=25? 30 W TJ Junction Temperature 150 ? Storage Temperature Range -65~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD684 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER

1.257. bd636.pdf Size:255K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD636 DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= -25mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) ·Complement to Type BD635 APPLICATIONS ·Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -5 A IBB Base Current-Continuous -0.3 A Collector Power Dissipation 2 @ Ta=25? PC W Collector Power Dissipation 30 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD636 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER

1.258. 2sd612_2sd612k.pdf Size:201K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD612 2SD612K DESCRIPTION · ·With TO-126 package ·Complement to type 2SB632/632K ·High collector dissipation ·Wide area of safe operation APPLICATIONS ·25V/35V, 2A low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SD612 25 VCBO Collector-base voltage Open emitter V 2SD612K 35 2SD612 25 VCEO Collector-emitter voltage Open base V 2SD612K 35 VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 2 A ICM Collector current-peak 3 A Ta=25? 1 PD Total power dissipation W TC=25? 10 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD612 2SD612K CHARACTERISTICS Tj=25? unless otherwise specified SYM

1.259. 2sd628.pdf Size:201K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD628 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(sus)= 100V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 5A ·Low Collector Saturation Voltage- : VCE (sat)= 2.0V(Max.)@ IC= 5A ·Complement to Type 2SB638 APPLICATIONS ·Designed for low frequency power amplifier and high current switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continunous 10 A ICM Collector Current-Peak 15 A IBB Base Current-Continunous 2 A Collector Power Dissipation PC @TC=25? 80 W Tj Junction Temperature 150 ? Tstg Storage Temperature Range -65~+150 ? isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD628

1.260. bd677a.pdf Size:121K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BD677A DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 60V ·DC Current Gain— : hFE = 750(Min) @ IC= 2 A ·Complement to Type BD678A APPLICATIONS ·Designed for use as output devices in complementary general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IBB Base Current 0.1 A Collector Power Dissipation PC TC=25? 40 W Junction Temperature 150 ? Ti Storage Temperature Range -55~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 3.13 ?/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BD677A ELECTRICAL CHARACTERISTICS

1.261. 2sd676.pdf Size:230K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SD676 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·High Power Dissipation- : PC= 125W(Max)@TC=25? ·Complement to Type 2SB656 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 20 A Collector Power Dissipation PC @TC=25? 125 W TJ Junction Temperature 150 ? Storage Temperature -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SD676 ELECTRICAL CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;

1.262. 2sd675.pdf Size:230K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SD675 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·High Power Dissipation- : PC= 100W(Max)@TC=25? ·Complement to Type 2SB655 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 20 A Collector Power Dissipation PC @TC=25? 100 W TJ Junction Temperature 150 ? Storage Temperature -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SD675 ELECTRICAL CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;

1.263. 2sd687.pdf Size:117K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD687 DESCRIPTION Ў¤ With TO-220C package Ў¤ Low collector saturation voltage Ў¤ DARLINGTON Ў¤ High DC current gain APPLICATIONS Ў¤ Switching applications Ў¤ Hammer drive,pulse motor drive Ў¤ Power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base DESCRIPTION Ў¤ Maximum absolute ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH Emitter CONDITIONS VALUE 60 Collector-base voltage Open emitter Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25Ўж Open base Open collector 40 5 3 25 150 -50~150 UNIT V V V A W Ўж Ўж

1.264. 2sd683.pdf Size:231K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD683 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·High DC Current Gain- : hFE= 500(Min.)@ IC= 5A APPLICATIONS ·High voltage and high power switching applications. ·Motor driver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IBB Base Current 2 A Collector Power Dissipation PC @TC=25? 150 W Junction Temperature 150 ? Tj Storage Temperature Range -65~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD683 ELECTRICAL CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining

1.265. bd648.pdf Size:138K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BD648 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Low Saturation Voltage ·Complement to Type BD647 APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICP Collector Current-Peak -12 A IBB Base Current-Continuous -0.3 A Collector Power Dissipation 2 @ Ta=25? PC W Collector Power Dissipation 62.5 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 2 ?/W Rth j-c Thermal Resistance,Junction to Ambient 62.5 ?/W

1.266. 2sd649.pdf Size:221K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD649 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Reliability APPLICATIONS ·Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 3 A ICP Collector Current-Pulse 5 A Collector Power Dissipation PC @ TC?90? 35 W TJ Junction Temperature 130 ? Storage Temperature Range -65~130 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD649 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 5 V Collector-Emitter Saturation Voltage IC= 3A; IBB

1.267. bd650.pdf Size:138K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BD650 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Low Saturation Voltage ·Complement to Type BD649 APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICP Collector Current-Peak -12 A IBB Base Current-Continuous -0.3 A Collector Power Dissipation 2 @ Ta=25? PC W Collector Power Dissipation 62.5 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 2 ?/W Rth j-c Thermal Resistance,Junction to Ambient 62.5 ?/W

1.268. 2sd633_2sd635.pdf Size:86K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD633 2SD635 DESCRIPTION · ·With TO-220C package ·Complement to type 2SB673/675 ·DARLINGTON ·High DC current gain ·Low saturation voltage APPLICATIONS ·High power switching ·Hammer drive,pulse motor drive PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SD633 100 VCBO Collector-base voltage Open emitter V 2SD635 60 2SD633 100 VCEO Collector-emitter voltage Open base V 2SD635 60 VEBO Emitter-base voltage Open collector 5 V IC Collector current 7 A IBB Base current 0.7 A PC Collector dissipation TC=25? 40 W Tj Junction temperature 150 ? Tstg Storage temperature -50~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD633 2SD635 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN

1.269. 2sd641.pdf Size:117K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD641 DESCRIPTION Ў¤ With TO-3 package Ў¤ High voltage ,high speed APPLICATIONS Ў¤ Converters Ў¤ Inverters Ў¤ Switching regulators Ў¤ Motor controls PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS MAX 600 Collector-base voltage Open emitter Collector-emitter voltage Open base 400 7 Emitter-base voltage Open collector Collector current 15 Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25Ўж 30 6 150 200 -65~200 UNIT V V V A A A W Ўж Ўж THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base VALUE 1.0 UNIT Ўж /W

1.270. bd675_bd677_bd679.pdf Size:118K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Darligton Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type BD676/678/680 Ў¤ DARLINGTON Ў¤ High DC current gain APPLICATIONS Ў¤ For use as output devices in complementary general­purpose amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base BD675/BD677/BD679 Ў¤ Absolute maximum ratings (Ta=25Ўж ) SYMBOL PARAMETER CONDITIONS BD675 BD677 VCBO Collector-base voltage VCEO IN Collector-emitter voltage ANG CH BD679 BD675 BD677 SEM E Open emitter Open base OND IC TOR UC VALUE 45 60 80 45 60 80 UNIT V V BD679 Open collector VEBO IC ICM IB PC Tj Tstg Emitter -base voltage Collector current Collector current-Peak Base current Collector power dissipation Junction temperature Storage temperature 5 4 7 0.1 V A A A W Ўж Ўж TC=25Ўж 40 150 -55~150 THERMAL

1.271. bd675a_677a_679a_681.pdf Size:117K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD675A/677A/679A/681 DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type BD676A/678A/680A/682 Ў¤ DARLINGTON APPLICATIONS Ў¤ For medium power linear and switching applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Ў¤ Absolute maximum ratings (Ta=25Ўж ) SYMBOL PARAMETER BD675A BD677A BD679A VCBO HAN INC Collector-base voltage Collector-emitter voltage Emitter -base voltage Collector current Collector current-Peak Base current Collector power dissipation Junction temperature Storage temperature BD681 GE S Open emitter EMIC CONDITIONS OND TOR UC VALUE 45 60 80 100 45 60 UNIT V BD675A BD677A Open base BD679A VCEO V 80 100 BD681 VEBO IC ICM IB PC Tj Tstg Open collector 5 4 6 0.1 V A A A W Ўж Ўж TC=25Ўж 40 150 -65~150

1.272. bd676.pdf Size:120K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BD676 DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = -45 V ·DC Current Gain— : hFE = 750(Min) @ IC= -1.5 A ·Complement to Type BD675 APPLICATIONS ·Designed for use as output devices in complementary general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -45 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A IBB Base Current -0.1 A Collector Power Dissipation PC TC=25? 40 W Junction Temperature 150 ? Ti Storage Temperature Range -55~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 3.13 ?/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BD676 ELECTRICAL CHARACTE

1.273. 2sd665.pdf Size:120K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD665 DESCRIPTION Ў¤ With TO-3 package Ў¤ Complement to type 2SB645 Ў¤ High power dissipation APPLICATIONS Ў¤ Power amplifier applications Ў¤ Power switching applications Ў¤ DC-DC converters PINNING(see Fig.2) PIN 1 2 3 Base Emitter DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH Collector CONDITIONS VALUE 200 Collector-base voltage Open emitter Collector-emitter voltage Open base 200 5 15 4 TC=25Ўж 150 150 -55~150 Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Open collector Fig.1 simplified outline (TO-3) and symbol UNIT V V V A A W Ўж Ўж

1.274. 2sd692.pdf Size:184K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor 2SD692 DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 1000 (Min) @ IC =1 Adc ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 80V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(TC=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCER Collector-Emitter Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 6 A IBB Base Current -Continuous 3 A PC Collector Power Dissipation@TC=25? 50 W Junction Temperature 150 ? Tj Storage Temperature -65~150 ? Tstg isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor 2SD692 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITI

1.275. 2sd602.pdf Size:453K _htsemi

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2SD602 TRANSISTOR (NPN) SOT–23 FEATURES ? Low Collector to Emitter Saturation Voltage ? Mini Type Package 1. BASE MAXIMUM RATINGS (Ta=25? unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 25 V CEO V Emitter-Base Voltage 5 V EBO IC Collector Current 500 mA PC Collector Power Dissipation 200 mW R Thermal Resistance From Junction To Ambient 625 ?/W ?JA T Junction Temperature 150 ? j T Storage Temperature -55~+150 ? stg ELECTRICAL CHARACTERISTICS (Ta=25? unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =10µA, I =0 30 V (BR)CBO C E Collector-emitter breakdown voltage V I =10mA, I =0 25 V (BR)CEO C B Emitter-base breakdown voltage V I =10µA, I =0 5 V (BR)EBO E C Collector cut-off current I V =20V, I =0 0.1 µA CBO CB E Emitter cut-off current I V =5V, I =0 0.1 µA EBO EB C h

1.276. umd6n.pdf Size:404K _htsemi

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UMD6N DIGITAL TRANSISTOR (NPN+ PNP) SOT-363 FEATURES DTA143T(PNP) and DTC143T(NPN) transistors are built-in a package. Transistor elements are independent, eliminating interference. Mounting cost and area can be cut in half. 1 External circuit MARKING:D6 Absolute maximum ratings(Ta=25?) Parameter Symbol Limits Unit Collector-base voltage V(BR)CBO 50 V Collector-emitter voltage V(BR)CEO 50 V Emitter-base voltage V(BR)EBO 5 V Collector current IC 100 mA Collector Power dissipation PC 150 mW Junction temperature Tj 150 ? Storage temperature Tstg -55~150 ? Electrical characteristics (Ta=25?) Parameter Symbol Min. Typ Max. Unit Conditions Collector-base breakdown voltage V(BR)CBO 50 V IC=50?A Collector-emitter breakdown voltage V(BR)CEO 50 V IC=1mA Emitter-base breakdown voltage V(BR)EBO 5 V IE=50?A Collector cut-off current ICBO 0.5 ?A VCB=50V Emitter cut-off current IEBO 0.5 ?A VEB=4V Collector-emitter saturation voltage VCE(sat) 0.3 V IC=

1.277. 2sd602a.pdf Size:429K _htsemi

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2SD602A TRANSISTOR (NPN) SOT–23 FEATURES ? Low Collector to Emitter Saturation Voltage ? Mini Type Package 1. BASE MAXIMUM RATINGS (Ta=25? unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 50 V CEO V Emitter-Base Voltage 5 V EBO IC Collector Current 500 mA PC Collector Power Dissipation 200 mW R Thermal Resistance From Junction To Ambient 625 ?/W ?JA T Junction Temperature 150 ? j T Storage Temperature -55~+150 ? stg ELECTRICAL CHARACTERISTICS (Ta=25? unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =10µA, I =0 60 V (BR)CBO C E Collector-emitter breakdown voltage V I =10mA, I =0 50 V (BR)CEO C B Emitter-base breakdown voltage V I =10µA, I =0 5 V (BR)EBO E C Collector cut-off current I V =20V, I =0 0.1 µA CBO CB E Emitter cut-off current I V =5V, I =0 0.1 µA EBO EB C

1.278. emd6.pdf Size:460K _htsemi

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EMD6 DIGITAL TRANSISTOR (NPN+ PNP) FEATURES SOT-563 DTA143T(PNP) and DTC143T(NPN) transistors are built-in a package. 1 Transistor elements are independent, eliminating interference. Mounting cost and area can be cut in half. External circuit MARKING:D6 Absolute maximum ratings(Ta=25?) Parameter Symbol Limits Unit Collector-base voltage V(BR)CBO 50 V Collector-emitter voltage V(BR)CEO 50 V Emitter-base voltage V(BR)EBO 5 V Collector current IC 100 mA Collector Power dissipation PC 150 mW Junction temperature Tj 150 ? Storage temperature Tstg -55~150 ? Electrical characteristics (Ta=25?) Parameter Symbol Min. Typ Max. Unit Conditions Collector-base breakdown voltage V(BR)CBO 50 V IC=50?A Collector-emitter breakdown voltage V(BR)CEO 50 V IC=1mA Emitter-base breakdown voltage V(BR)EBO 5 V IE=50?A Collector cut-off current ICBO 0.5 ?AVCB=50V Emitter cut-off current IEBO 0.5 ?AVEB=4V Collector-emitter saturation voltage VCE(sat) 0.3 V IC=5mA,IB=0

1.279. ceu6056_ced6056.pdf Size:410K _cet

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CED6056/CEU6056 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 76A , RDS(ON) = 6.2m? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 76 A Drain Current-Pulsed a IDM 304 A Maximum Power Dissipation @ TC = 25 C 70 W PD - Derate above 25 C 0.47 W/ C Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Case R?JC 2.2 C/W Thermal Resistance, Junction-to-Ambient R?JA 50 C/W Rev 1. 2010.July Details are subject to change without notice . http://www.cetsemi.com 1 G D S CED6056/CEU6056 Electrical Ch

1.280. ceu6186_ced6186.pdf Size:415K _cet

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CED6186/CEU6186 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 28A, RDS(ON) = 25m? @VGS = 10V. RDS(ON) = 32m? @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 28 A Drain Current-Pulsed a IDM 112 A Maximum Power Dissipation @ TC = 25 C 38 W PD - Derate above 25 C 0.25 W/ C Operating and Store Temperature Range TJ,Tstg -55 to 175 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Case R?JC 4 C/W Thermal Resistance, Junction-to-Ambient R?JA 50 C/W Rev 2. 2011.Feb Details are subject to change without notice . http://www.cetsemi.com 1 G D S CED618

1.281. ceu6086_ced6086.pdf Size:410K _cet

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CED6086/CEU6086 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 50A, RDS(ON) = 8.7m? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 50 A Drain Current-Pulsed a IDM 200 A Maximum Power Dissipation @ TC = 25 C 50 W PD - Derate above 25 C 0.33 W/ C Operating and Store Temperature Range TJ,Tstg -55 to 175 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Case R?JC 3 C/W Thermal Resistance, Junction-to-Ambient R?JA 50 C/W Rev 3. 2011.July Details are subject to change without notice . http://www.cetsemi.com 1 G D S CED6086/CEU6086 Electrical Charact

1.282. ceu630n_ced630n.pdf Size:392K _cet

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CED630N/CEU630N N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V, 7.5A, RDS(ON) = 0.36? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 7.5 A Drain Current-Pulsed a IDM 30 A Maximum Power Dissipation @ TC = 25 C 54 W PD - Derate above 25 C 0.43 W/ C Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Case R?JC 2.3 C/W Thermal Resistance, Junction-to-Ambient R?JA 50 C/W Rev 2. 2009.March Details are subject to change without notice . http://www.cetsemi.com 1 G D S CED630N/CEU630N Electrica

1.283. ceu655_ced655.pdf Size:413K _cet

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CED655/CEU655 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 150V, 6.4A, RDS(ON) = 0.45? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 6.4 A Drain Current-Pulsed a IDM 25.6 A Maximum Power Dissipation @ TC = 25 C 43 W PD - Derate above 25 C 0.29 W/ C Operating and Store Temperature Range TJ,Tstg -55 to 175 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Case R?JC 3.5 C/W Thermal Resistance, Junction-to-Ambient R?JA 50 C/W This is preliminary information on a new product in development now . Rev 1. 2011.Aug Details are subject to change

1.284. ceu6336_ced6336.pdf Size:390K _cet

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CED6336/CEU6336 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 25A , RDS(ON) = 41m? @VGS = 10V. RDS(ON) = 55m? @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 25 A Drain Current-Pulsed a IDM 100 A Maximum Power Dissipation @ TC = 25 C 40 W PD - Derate above 25 C 0.06 W/ C Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Case R?JC 3.2 C/W Thermal Resistance, Junction-to-Ambient R?JA 50 C/W This is preliminary information on a new product in development now . Rev 1. 2007.Jan Detai

1.285. ceu6060n_ced6060n.pdf Size:420K _cet

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CED6060N/CEU6060N N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 34A, RDS(ON) = 25m? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 34 A Drain Current-Pulsed a IDM 136 A Maximum Power Dissipation @ TC = 25 C 62.5 W PD - Derate above 25 C 0.42 W/ C Operating and Store Temperature Range TJ,Tstg -65 to 175 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Case R?JC 2.4 C/W Thermal Resistance, Junction-to-Ambient R?JA 50 C/W Rev 1. 2008.Sep. Details are subject to change without notice . http://www.cetsemi.com 1 G D S CED6060N/CEU6060N Electrical

1.286. ced6861_ceu6861.pdf Size:440K _cet

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CED6861/CEU6861 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -12A, RDS(ON) = 132m? @VGS = -10V. RDS(ON) = 195m? @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -12 A Drain Current-Pulsed a IDM -48 A Maximum Power Dissipation @ TC = 25 C 31 W PD - Derate above 25 C 0.25 W/ C Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Case R?JC 4 C/W Thermal Resistance, Junction-to-Ambient R?JA 50 C/W Rev 4. 2011.Apr Details are subject to change without notice . http://www.cetsemi.com 1 G D S

1.287. ced6601_ceu6601.pdf Size:428K _cet

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CED6601/CEU6601 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -16A, RDS(ON) = 86m? @VGS = -10V. RDS(ON) = 125m? @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -16 A Drain Current-Pulsed a IDM -64 A Maximum Power Dissipation @ TC = 25 C 43 W PD - Derate above 25 C 0.29 W/ C Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Case R?JC 3.5 C/W Thermal Resistance, Junction-to-Ambient R?JA 50 C/W Rev 3. 2010.July Details are subject to change without notice . http://www.cetsemi.com 1 G D

1.288. ceu6426_ced6426.pdf Size:345K _cet

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CED6426/CEU6426 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 16A , RDS(ON) = 66m? @VGS = 10V. RDS(ON) = 85m? @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 16 A Drain Current-Pulsed a IDM 64 A Maximum Power Dissipation @ TC = 25 C 32 W PD - Derate above 25 C 0.26 W/ C Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Case R?JC 3.9 C/W Thermal Resistance, Junction-to-Ambient R?JA 50 C/W Rev 2. 2007.April Details are subject to change without notice . http://www.cetsemi.com 1 G D S C

1.289. 2sd667-2sd667a_to-92mod.pdf Size:257K _lge

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2SD667/2SD667A TO-92MOD Transistor (NPN) TO-92MOD 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE Features Low frequency power amplifier 5.800 6.200 Complementary pair with 2SB647/A 8.400 MAXIMUM RATINGS (TA=25? unless otherwise noted) 8.800 0.900 1.100 Symbol Parameter Value Units 0.400 VCBO Collector- Base Voltage 120 V 0.600 VCEO Collector-Emitter Voltage 2SD667 80 13.800 14.200 V 2SD667A 100 VEBO Emitter-Base Voltage 5 V 1.500 TYP 2.900 IC Collector Current -Continuous 1 A Dimensions in inches and (millimeters) 3.100 0.000 1.600 PC Collector Power Dissipation 900 mW 0.380 TJ Junction Temperature 150 ? 0.400 4.700 0.500 5.100 Tstg Storage Temperature -55-150 ? 1.730 2.030 4.000 ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10?A,IE=0 120 V 2SD667 80 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 2SD6

1.290. 2sd669-2sd669a_to-126.pdf Size:180K _lge

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2SD669/2SD669A(NPN) TO-126 Transistor TO-126 1. EMITTER 2. COLLECTOR 3. BASE 3 2 1 Features 2.500 7.400 2.900 1.100 7.800 Low frequency power amplifier complementary pair 1.500 with 2SB649/A 3.900 3.000 4.100 MAXIMUM RATINGS (TA=25? unless otherwise noted) 3.200 10.600 0.000 0.300 Symbol Parameter Value Units11.000 VCBO Collector- Base Voltage 180 V 2.100 VCEO Collector-Emitter Voltage 2SD669 120 2.300 V 2SD669A 160 1.170 1.370 VEBO Emitter-Base Voltage 5 V 15.300 IC Collector Current -Continuous 1.5 A 15.700 PC Collector Dissipation 1 W Dimensions in inches and (millimeters) TJ Junction Temperature 150 ? 0.660 Tstg Storage Temperature -55-150 ? 0.860 0.450 0.600 2.290 TYP ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise 4.480 specified) 4.680 Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=1mA, IE=0 180 V IC=10mA, IB=0 2DS669 120 Collector-emitter breakdown

1.291. 2sd667-2sd667a_to-92l.pdf Size:215K _lge

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2SD667/2SD667A TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 4.700 5.100 2 3 1 Features 7.800 Low frequency power amplifier 8.200 Complementary pair with 2SB647/A 0.600 0.800 MAXIMUM RATINGS (TA=25? unless otherwise noted) 0.350 Symbol Parameter Value Units 0.550 13.800 14.200 VCBO Collector- Base Voltage 120 V VCEO Collector-Emitter Voltage 2SD667 80 V 2SD667A 100 1.270 TYP VEBO Emitter-Base Voltage 5 V 2.440 IC Collector Current -Continuous 1 A 2.640 PC Collector Power Dissipation 900 mW 0.000 1.600 0.300 TJ Junction Temperature 150 ? 0.350 Dimensions in inches and (millimeters) 0.450 3. Tstg Storage Temperature -55-150 ? 700 4.100 1.280 1.580 ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) 4.000 Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10?A,IE=0 120 V 2SD667 80 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 2SD6

1.292. sd168_sd600_sd601_sd602_sd802_sd812.pdf Size:336K _gdr

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1.293. msd601.pdf Size:425K _wietron

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MSD601 NPN General Purpose Transistors 3 1 P b Lead(Pb)-Free 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Rating Symbol Value Unit Collector-Emitter Voltage VCEO 50 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 7.0 V IC Collector Current - Continuous 100 mA IC(P) Collector Current - Peak 200 mA Total Device Dissipation PD 0.2 mW TA=25°C Tj °C Junction Temperature +150 Tstg Storage Temperature -55 to +150 °C WEITRON 1/6 18-Sep-06 http://www.weitron.com.tw MSD601 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage V(BR)CEO 50 - - V IC = 2.0mA, IE = 0A Collector-Base Breakdown Voltage V(BR)CBO 60 - - V IC = 10µA, IB = 0A Emitter-Base Breakdown Voltage V(BR)EBO 7.0 - - V IE= 10µA, IC=0 Collector Cutoff Current ICBO - - 0.1 µA VCB = 45V, IC = 0A Emitter Cutoff Current ICEO - - 0.1 µA VEB = 10V, IC = 0A ON CHARACTERISTICS Collector-Emitter Saturation Voltage VCE(sat) - - 0

1.294. 2sd669.pdf Size:245K _wietron

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2SD669/2SD669A NPN Epitaxial Planar Transistors 1. EMITTER 2. COLLECTOR P b Lead(Pb)-Free 3. BASE 1 2 3 TO-126C ABSOLUTE MAXIMUM RATINGS(TA=25?C) Rating Symbol 2SD669 2SD669A Unit VCBO 180 180 V Collector-Emitter Voltage VCEO 120 160 V Collector-Base Voltage VEBO Emitter-Base Voltage 5.0 5.0 V Collector Current IC 1.5 A PD 1.0 W Power Disspation Tj 150 ?C Junction Temperature Tstg Storage , Temperature -55 to +150 ?C WEITRON 1/5 18-Oct-05 http://www.weitron.com.tw 2SD669/2SD669A ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage V(BR)CBO 180 - - V IC = 1.0mA, IE = 0 Collector-Base Breakdown Voltage IC = 10mA, IB = 0 2SD669 120 V(BR)CEO - - V 2SD669A 160 Emitter-Base Breakdown Voltage 5.0 - - V V(BR)EBO IC = 0, IE = 1.0mA Collector Cutoff Current ICBO - - 10 µA VCB = 160V, IE=0 Emitter Cutoff Current mA - - 10 IEBO VEB = 4.0V, IC=

1.295. hsd669a.pdf Size:43K _hsmc

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Spec. No. : HE6630 HI-SINCERITY Issued Date : 1995.12.18 Revised Date : 2006.07.27 MICROELECTRONICS CORP. Page No. : 1/4 HSD669A NPN Epitaxial Planar Transistor Description Low frequency power amplifier complementary pair with HSB649A TO-126ML Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures Storage Temperature.............................................................................................................................................. -55 ~ +150 °C Junction Temperature...................................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ........................................................................................................................................ 1 W Total Power Dissipation (TC=25°C) ........................................................................................

1.296. hsd669at.pdf Size:89K _hsmc

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Spec. No. : H200901 HI-SINCERITY Issued Date : 2009.02.20 Revised Date : MICROELECTRONICS CORP. Page No. : 1/4 HSD669AT NPN Epitaxial Planar Transistor Description Low frequency power amplifier complementary pair with HSB649A TO-126 Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures Storage Temperature .............................................................................................................................................. -55 ~ +150 °C Junction Temperature ...................................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ......................................................................................................................................... 1 W Total Power Dissipation (TC=25°C)................................................................................

1.297. hsd667a.pdf Size:49K _hsmc

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Spec. No. : HE6510 HI-SINCERITY Issued Date : 1996.07.15 Revised Date : 2004.08.16 MICROELECTRONICS CORP. Page No. : 1/5 HSD667A SILICON NPN EPITAXIAL Description Low Frequency Power Amplifier Complementary Pair With HSB647A. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ..................................................................................................................... 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 900 mW • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ......................................................................................................................... 120

1.298. btd6055j3.pdf Size:235K _cystek

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Spec. No. : C659J3 Issued Date : 2008.06.25 CYStech Electronics Corp. Revised Date : Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BTD6055J3 Features • Low VCE(SAT) • Low RCE(SAT), RCE(SAT)=50 mΩ(typically) at IC=5A • Low operating collector voltage • Excellent current gain characteristics at very low VCE • Suitable for low dropout voltage application • Pb-free package Symbol Outline BTD6055J3 TO-252 B:Base C:Collector B C E E:Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO 15 V Collector-Emitter Voltage VCEO 10 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 6 A Collector Current (Pulse) ICP 9 (Note 1) Power Dissipation @ TA=25℃ PD 1 (Note 2) W Power Dissipation @ TC=25℃ PD 15 Thermal Resistance, Junction to Ambient RθJA 71.4 (Note 2) °C/W Thermal Resistance, Junction to Case RθJC 6.25 °C/W Junction Temperature Tj 150 °C

1.299. bd679a.pdf Size:232K _cystek

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Spec. No. : C652T3-M Issued Date : 2006.05.24 CYStech Electronics Corp. Revised Date : 2011.09.30 Page No. : 1/6 NPN Epitaxial Planar Transistor BD679A Description The BD679A is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: •High BVCEO •Low VCE(SAT) •High current gain •Monolithic construction with built-in base-emitter shunt resistors •Pb-free lead plating package Equivalent Circuit Outline BD679A TO-126 C B R1≈8k R2≈120 B:Base E C:Collector E:Emitter E C B BD679A CYStek Product Specification Spec. No. : C652T3-M Issued Date : 2006.05.24 CYStech Electronics Corp. Revised Date : 2011.09.30 Page No. : 2/6 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 5 V Collector Current IC(DC) 4 A Base Current IB 1 A Pd(TA=25℃)

1.300. btd6055m3.pdf Size:236K _cystek

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Spec. No. : C659M3 Issued Date : 2008.06.25 CYStech Electronics Corp. Revised Date : Page No. : 1/6 NPN Epitaxial Planar High Current (High Performance) Transistor BTD6055M3 Features • Low VCE(SAT) • Low RCE(SAT), RCE(SAT)=50 mΩ(typically) at IC=5A • Low operating collector voltage • Excellent current gain characteristics at very low VCE • Suitable for low dropout voltage application • Pb-free package Symbol Outline BTD6055M3 SOT-89 B:Base B C B C E C:Collector E:Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO 15 V Collector-Emitter Voltage VCEO 10 V Emitter-Base Voltage VEBO 7 V Continuous Collector Current IC 6 A Peak Collector Current ICP 9 A 0.6 Power Dissipation Pd 1 (Note 1) W 2 (Note 2) Operating and Storage Temperature Range Tj ; Tstg -55 ~ +150 °C Note : 1. When mounted on FR-4 PCB with area measuring 10×10×1 mm 2. When mounted on ceramic w

1.301. mted6n25kj3.pdf Size:301K _cystek

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Spec. No. : C936J3 Issued Date : 2013.12.09 CYStech Electronics Corp. Revised Date : Page No. : 1/9 lN-Channel Enhancement Mode Power MOSFET BVDSS 250V MTED6N25KJ3 ID @ VGS=10V 8A 422mΩ VGS=10V, ID=5A RDSON(TYP) 399mΩ VGS=6V, ID=3A Features • ESD protected • Low Gate Charge • Fast Switching Characteristic • Simple Drive Requirement • Pb-free lead plating and halogen-free package Equivalent Circuit Outline MTED6N25KJ3 TO-252(DPAK) G D S G:Gate D:Drain S:Source Ordering Information Device Package Shipping TO-252 MTED6N25KJ3-0-T3-G 2500 pcs / Tape & Reel (Pb-free lead plating and halogen-free package) Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTED6N25KJ3 CYStek Product Specification Spec. No. : C936J3 Issued Date : 2013.12.09 C

1.302. mted6n25j3.pdf Size:310K _cystek

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Spec. No. : C894J3 Issued Date : 2013.03.11 CYStech Electronics Corp. Revised Date : 2013.12.30 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 250V MTED6N25J3 ID 8A 435mΩ VGS=10V, ID=5A RDSON(TYP) 410mΩ VGS=6V, ID=3A Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating and halogen-free package Equivalent Circuit Outline MTED6N25J3 TO-252(DPAK) G D S G:Gate D:Drain S:Source Ordering Information Device Package Shipping TO-252 MTED6N25J3-0-T3-G 2500 pcs / Tape & Reel (Pb-free lead plating and halogen-free package) Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTED6N25J3 CYStek Product Specification Spec. No. : C894J3 Issued Date : 2013.03.11 CYStech Electronics Corp. Revised Date : 2013.12.30 Pa

See also transistors datasheet: D45VM5 , D45VM6 , D45VM7 , D45VM8 , D45VM9 , D5-28B , D56W1 , D56W2 , 2SC2625 , D60ST1520 , D60T1520 , D60T2575 , D60T2590 , D60T3075 , D60T3090 , D60T3575 , D60T3590 .

Keywords

 D6 Datasheet  D6 Datenblatt  D6 RoHS  D6 Distributor
 D6 Application Notes  D6 Component  D6 Circuit  D6 Schematic
 D6 Equivalent  D6 Cross Reference  D6 Data Sheet  D6 Fiche Technique

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