All Transistors Datasheet

 

D6 Transistor (IC) Datasheet. Cross Reference Search. D6 Equivalent

Type Designator: D6

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.15

Maximum collector-base voltage |Ucb|, V: 30

Maximum collector-emitter voltage |Uce|, V: 25

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.03

Maksimalna temperatura (Tj), °C: 175

Transition frequency (ft), MHz: 200

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 200

Noise Figure, dB: -

Package of D6 transistor:

D6 Transistor Equivalent Substitute - Cross-Reference Search

D6 PDF:

1.1. msd601-r.pdf Size:110K _motorola

D6
D6

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MSD601RT1/D NPN General Purpose Amplifier * MSD601-RT1 Transistors Surface Mount COLLECTOR MSD601-ST1 3 *Motorola Preferred Device 2 1 3 BASE EMITTER MAXIMUM RATINGS (TA = 25C) 2 1 Rating Symbol Value Unit CollectorBase Voltage V(BR)CBO 60 Vdc CASE 318D03, STYLE 1 CollectorEmitter Voltage V(BR)CEO 50 Vdc SC59

1.2. msd6150rev0d.pdf Size:64K _motorola

D6
D6

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MSD6150/D Dual Diode MSD6150 Common Anode 3 Anode 1 2 3 CASE 2904, STYLE 4 TO92 (TO226AA) Cathode 1 2 Cathode MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Peak Forward Recurrent Current IF 200 mAdc Peak Forward Surge Current IFM(surge) 500 mAdc (Pulse Width = 10 sec) Total Device

1.3. mtd6n15r.pdf Size:231K _motorola

D6
D6

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD6N15/D Designer's? Data Sheet MTD6N15 Power Field Effect Transistor DPAK for Surface Mount NChannel EnhancementMode Silicon Gate TMOS POWER FET This TMOS Power FET is designed for high speed, low loss 6.0 AMPERES power switching applications such as switching regulators, convert- 150 VOLTS ers, solenoid and relay drive

1.4. bd675_bd675a_bd677_bd677a_bd679_bd679a_bd681.pdf Size:112K _motorola

D6
D6

Order this document MOTOROLA by BD675/D SEMICONDUCTOR TECHNICAL DATA BD675 BD675A Plastic Medium-Power BD677 Silicon NPN Darlingtons BD677A . . . for use as output devices in complementary generalpurpose amplifier applica- BD679 tions. High DC Current Gain BD679A hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc Monolithic Construction BD681 * BD675, 675A, 677, 677A, 679, 679A, 68

1.5. mtd6n10e.pdf Size:211K _motorola

D6
D6

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD6N10E/D Designer's? Data Sheet MTD6N10E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET NChannel EnhancementMode Silicon Gate 6.0 AMPERES 100 VOLTS This advanced TMOS EFET is designed to withstand high RDS(on) = 0.400 OHM energy in the avalanche and commutat

1.6. msd6100rev0d.pdf Size:64K _motorola

D6
D6

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MSD6100/D Dual Switching Diode MSD6100 Common Cathode Anode 1 2 Anode 1 2 3 CASE 2904, STYLE 3 TO92 (TO226AA) 3 Cathode MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Recurrent Peak Forward Current IF 200 mAdc Peak Forward Surge Current IFM(surge) 500 mAdc (Pulse Width = 10 sec) P

1.7. mtd6p10e.pdf Size:261K _motorola

D6
D6

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD6P10E/D Designer's? Data Sheet MTD6P10E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET PChannel EnhancementMode Silicon Gate 6.0 AMPERES 100 VOLTS This advanced TMOS EFET is designed to withstand high RDS(on) = 0.66 OHM energy in the avalanche and commutatio

1.8. mtd6n20e.pdf Size:269K _motorola

D6
D6

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD6N20E/D Designer's? Data Sheet MTD6N20E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET NChannel EnhancementMode Silicon Gate 6.0 AMPERES 200 VOLTS This advanced TMOS EFET is designed to withstand high RDS(on) = 0.7 OHM energy in the avalanche and commutation

1.9. msd602-r.pdf Size:111K _motorola

D6
D6

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MSD602RT1/D NPN General Purpose Amplifier MSD602-RT1 Transistor Surface Mount COLLECTOR Motorola Preferred Device 3 3 2 2 1 1 BASE EMITTER MAXIMUM RATINGS (TA = 25C) Rating Symbol Value Unit CASE 318D03, STYLE 1 SC59 CollectorBase Voltage V(BR)CBO 60 Vdc CollectorEmitter Voltage V(BR)CEO 50 Vdc EmitterBase Volt

1.10. bd675_bd677_bd679_bd681.pdf Size:112K _motorola

D6
D6

Order this document MOTOROLA by BD675/D SEMICONDUCTOR TECHNICAL DATA BD675 BD675A Plastic Medium-Power BD677 Silicon NPN Darlingtons BD677A . . . for use as output devices in complementary generalpurpose amplifier applica- BD679 tions. High DC Current Gain BD679A hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc Monolithic Construction BD681 * BD675, 675A, 677, 677A, 679, 679A, 68

1.11. bd676_bd678_bd680_bd682.pdf Size:110K _motorola

D6
D6

Order this document MOTOROLA by BD676/D SEMICONDUCTOR TECHNICAL DATA BD676 BD676A Plastic Medium-Power BD678 Silicon PNP Darlingtons BD678A . . . for use as output devices in complementary generalpurpose amplifier applica- BD680 tions. High DC Current Gain BD680A hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc Monolithic Construction BD682 BD676, 676A, 678, 678A, 680, 680A, 682 a

1.12. mjd6036r_mjd6039.pdf Size:270K _motorola

D6
D6

Order this document MOTOROLA by MJD6036/D SEMICONDUCTOR TECHNICAL DATA NPN MJD6036 Complementary Darlington PNP MJD6039 Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages SILICON in applications such as switching regulators, convertors, and power amplifiers. POWER TRANSISTORS Lead Formed for Surface

1.13. 2pd602a.pdf Size:100K _philips

D6
D6

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D114 2PD602A NPN general purpose transistor Product data sheet 1999 Apr 23 Supersedes data of 1997 Jun 20 NXP Semiconductors Product data sheet NPN general purpose transistor 2PD602A FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 50 V). 1 base 2 emitter APPLICATIONS 3 collector General p

1.14. 2pd602aql-arl-asl.pdf Size:57K _philips

D6
D6

2PD602AQL; 2PD602ARL; 2PD602ASL 50 V, 500 mA NPN general-purpose transistors Rev. 01 27 October 2008 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number[1] Package PNP complement NXP JEDEC 2PD602AQL SOT23 TO-236AB - 2PD602ARL 2PB710

1.15. bld6g21l-50_bld6g21ls-50.pdf Size:378K _philips

D6
D6

BLD6G21L-50; BLD6G21LS-50 TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor Rev. 2 17 August 2010 Product data sheet 1. Product profile 1.1 General description The BLD6G21L-50 and BLD6G21LS-50 incorporate a fully integrated Doherty solution using NXPs state of the art GEN6 LDMOS technology. This device is perfectly suited for TD-SCDMA base station applications at freq

1.16. bld6g22l-50_bld6g22ls-50.pdf Size:363K _philips

D6
D6

BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor Rev. 3 17 August 2010 Product data sheet 1. Product profile 1.1 General description The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using NXPs state of the art GEN6 LDMOS technology. This device is perfectly suited for CDMA base station applications at frequencies

1.17. 2pd601art.pdf Size:85K _philips

D6
D6

2PD601ART 50 V, 100 mA NPN general-purpose transistor Rev. 01 15 March 2007 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: 2PB709ART. 1.2 Features General-purpose transistor Small SMD plastic package 1.3 Applications General-purpose switching and

1.18. pemd6_pumd6.pdf Size:272K _philips

D6
D6

DISCRETE SEMICONDUCTORS DATA SHEET PEMD6; PUMD6 NPN/PNP resistor-equipped transistors; R1 = 4.7 k?, R2 = open Product data sheet 2004 Apr 07 Supersedes data of 2003 Nov 04 NXP Semiconductors Product data sheet NPN/PNP resistor-equipped transistors; PEMD6; PUMD6 R1 = 4.7 k?, R2 = open FEATURES DESCRIPTION Built-in bias resistors NPN/PNP resistor-equipped transistors (see _Da

1.19. 2pd601a_4.pdf Size:47K _philips

D6
D6

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 2PD601A NPN general purpose transistor 1999 Apr 23 Product specification Supersedes data of 1997 Jun 20 Philips Semiconductors Product specification NPN general purpose transistor 2PD601A FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 50 V). 1 base 2 emitter APPLICATIONS 3 collector Gen

1.20. 2pd602a_4.pdf Size:47K _philips

D6
D6

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 2PD602A NPN general purpose transistor 1999 Apr 23 Product specification Supersedes data of 1997 Jun 20 Philips Semiconductors Product specification NPN general purpose transistor 2PD602A FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 50 V). 1 base 2 emitter APPLICATIONS 3 collector Ge

1.21. 2pd601arl-asl.pdf Size:56K _philips

D6
D6

2PD601ARL; 2PD601ASL 50 V, 100 mA NPN general-purpose transistors Rev. 01 6 November 2008 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number[1] Package PNP complement NXP JEDEC 2PD601ARL SOT23 TO-236AB 2PB709ARL 2PD601ASL 2PB709ASL

1.22. phd6n10e_1.pdf Size:56K _philips2

D6
D6

Philips Semiconductors Product specification PowerMOS transistor PHD6N10E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 100 V mounting featuring high avalanche ID Drain current (DC) 6.3 A energy capability, stable blocking Ptot Total power diss

1.23. pmbd6100_3.pdf Size:63K _philips2

D6
D6

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBD6100 High-speed double diode 1999 May 11 Product specification Supersedes data of 1996 Sep 18 Philips Semiconductors Product specification High-speed double diode PMBD6100 FEATURES DESCRIPTION PINNING Small plastic SMD package The PMBD6100 consists of two PIN DESCRIPTION high-speed switching diodes with High switching

1.24. pumd6_2.pdf Size:58K _philips2

D6
D6

DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage MBD128 PUMD6 NPN/PNP resistor-equipped transistor 1999 May 28 Product specification Supersedes data of 1997 Dec 15 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistor PUMD6 FEATURES Transistors with different polarity, each with a built-in bias resistor R1 (typ. 4.7 k?) 6 5 4 handbook, halfpage

1.25. php63nq03lt_phb63nq03lt_phd63nq03lt.pdf Size:267K _philips2

D6
D6

PHP/PHB/PHD63NQ03LT TrenchMOS logic level FET Rev. 01 14 June 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: PHP63NQ03LT in SOT78 (TO-220AB) PHB63NQ03LT in SOT404 (D2-PAK) PHD63NQ03LT in SOT428 (D-PAK). 1.2 Features Logic level compatible Low gate charge

1.26. phb69n03lt_phd69n03lt_php69n03lt_7.pdf Size:111K _philips2

D6
D6

Philips Semiconductors Product specification N-channel TrenchMOS? transistor PHP69N03LT, PHB69N03LT Logic level FET PHD69N03LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 69 A Low thermal resistance Logic level compatible RDS(ON) ? 12 m? (VGS = 10 V) g RDS(ON) ? 14 m? (VGS = 5 V) s GENERAL DESCRIP

1.27. pmbd6050_3.pdf Size:63K _philips2

D6
D6

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBD6050 High-speed diode 1999 May 11 Product specification Supersedes data of 1996 Sep 18 Philips Semiconductors Product specification High-speed diode PMBD6050 FEATURES DESCRIPTION PINNING Small plastic SMD package The PMBD6050 is a high-speed PIN DESCRIPTION switching diode fabricated in planar High switching speed: ma

1.28. std6nf10.pdf Size:266K _st

D6
D6

STD6NF10 N-CHANNEL 100V - 0.22 ? - 6A IPAK/DPAK LOW GATE CHARGE STripFET POWER MOSFET TYPE VDSS RDS(on) ID STD6NF10 100 V <0.250 ? 6 A TYPICAL RDS(on) = 0.22 ? EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED 3 3 LOW THRESHOLD DRIVE 2 1 THROUGH-HOLE IPAK (TO-251) POWER 1 PACKAGE IN TUBE (SUFFIX -1") IPAK DPAK SURFACE-MOUNTING DPAK (TO-252) TO-251 TO-252 POWER PACKAGE I

1.29. pd60030.pdf Size:67K _st

D6
D6

PD60030 PD60030S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA Designed for GSM / EDGE / IS-97 applications EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 30 W with 10 dB gain @ 2000 MHz PowerSO-10RF DESCRIPTION (formed lead) The PD60030 is a common source N-Channel, en- ORDER CODE BRANDING hancement-mode lateral Field-Effect RF power PD60030 PD6

1.30. stp6nk50z_stf6nk50z_std6nk50z.pdf Size:399K _st

D6
D6

STP6NK50Z - STF6NK50Z STD6NK50Z N-CHANNEL 500V - 0.93? - 5.6A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH MOSFET TYPE VDSS RDS(on) ID Pw STP6NK50Z 500 V <1.2? 5.6 A 90 W STF6NK50Z 500 V <1.2? 5.6 A 25 W STD6NK50Z 500 V <1.2? 5.6 A 90 W TYPICAL RDS(on) = 0.93 ? 3 EXTREMELY HIGH dv/dt CAPABILITY 2 1 100% AVALANCHE TESTED GATE CHARGE MINIMIZED TO-220 TO-220FP VERY LOW INTRINS

1.31. std60n3lh5_stp60n3lh5_stu60n3lh5.pdf Size:386K _st

D6
D6

STD60N3LH5 STP60N3LH5, STU60N3LH5 N-channel 30 V, 0.0072 ?, 48 A DPAK, IPAK, TO-220 STripFET V Power MOSFET Features Type VDSS RDS(on) max ID STD60N3LH5 30 V 0.008 ? 48 A 3 2 STP60N3LH5 30 V 0.0084 ? 48 A 1 STU60N3LH5 30 V 0.0084 ? 48 A TO-220 RDS(on) * Qg industry benchmark 3 Extremely low on-resistance RDS(on) 3 2 1 1 Very low switching gate charge High avalanche ru

1.32. std65nf06_stp65nf06.pdf Size:338K _st

D6
D6

STD65NF06 STP65NF06 N-channel 60V - 11.5m? - 60A - DPAK/TO-220 STripFET II Power MOSFET General features Type VDSS RDS(on) ID STD65NF06 60V <14m? 60A STP65NF06 60V <14m? 60A 3 3 Standard level gate drive 2 1 1 100% avalanche tested TO-220 DPAK Description This Power MOSFET is the latest development of STMicroelectronics unique single feature size strip-based process.

1.33. std60nf06.pdf Size:414K _st

D6
D6

STD60NF06 N-channel 60V - 0.014? - 60A - DPAK STripFET II Power MOSFET General features Type VDSS RDS(on) ID STD60NF06 60V <0.016? 60A Exceptional dv/dt capability 3 Application oriented characterization 1 100% avalanche tested DPAK Description This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input

1.34. std616a.pdf Size:121K _st

D6
D6

STD616A HIGH VOLTAGE NPN POWER TRANSISTOR REVERSE PINS OUT Vs STANDARD IPAK (TO-251) / DPAK (TO-252) PACKAGES HIGH VOLTAGE CAPABILITY HIGH DC CURRENT GAIN THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX "-1") SURFACE-MOUNTING DPAK (TO-252) 3 3 POWER PACKAGE IN TAPE & REEL 2 1 1 (SUFFIX "T4") MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION IPAK DPAK TO-251 TO-

1.35. std60n3lh5_stp60n3lh5_stu60n3lh5_stu60n3lh5-s.pdf Size:747K _st

D6
D6

STD60N3LH5, STP60N3LH5 STU60N3LH5, STU60N3LH5-S N-channel 30 V, 0.0072 ?, 48 A DPAK, IPAK, Short IPAK, TO-220 STripFET V Power MOSFET Features Order codes VDSS RDS(on) max ID 3 STD60N3LH5 30 V 0.008 ? 48 A 2 1 3 STP60N3LH5 30 V 0.0084 ? 48 A 2 1 IPAK TO-220 STU60N3LH5 30 V 0.0084 ? 48 A STU60N3LH5-S 30 V 0.0084 ? 48 A RDS(on) * Qg industry benchmark 3 2 Extremely low on-r

1.36. std6nc40.pdf Size:272K _st

D6
D6

STD6NC40 N-CHANNEL 400V - 0.75? - 5A - DPAK / IPAK PowerMeshII MOSFET TYPE VDSS RDS(on) ID STD6NC40 400V < 1 ? 5A TYPICAL RDS(on) = 0.75? EXTREMELY HIGH dv/dt CAPABILITY 3 3 2 100% AVALANCHE TESTED 1 1 GATE CHARGE MINIMIZED ADD SUFFIX T4 FOR ORDERING IN TAPE & REEL DPAK IPAK ADD SUFFIX -1 FOR ORDERING IN IPAK DESCRIPTION The PowerMESHII is the evolution of the first

1.37. std6nf10_stu6nf10.pdf Size:327K _st

D6
D6

STD6NF10 STU6NF10 N-channel 100 V, 0.22 ?, 6 A, DPAK, IPAK low gate charge STripFET Power MOSFET Features Type VDSS RDS(on) max ID STD6NF10 100 V < 0.250 ? 6 A STU6NF10 100 V < 0.250 ? 6 A 3 3 2 1 1 Exceptional dv/dt capability IPAK 100% avalanche tested DPAK Application Switching applications Description This Power MOSFET series realized with Figure 1. Internal schemati

1.38. std6n62k3_stf6n62k3_stp6n62k3_stu6n62k3.pdf Size:427K _st

D6
D6

STD6N62K3 - STF6N62K3 STP6N62K3 - STU6N62K3 N-channel 620 V, 1.1 ?, 5.5 A, IPAK, DPAK, TO-220,TO-220FP SuperMESH3 Power MOSFET Features 3 RDS(on) 3 Type VDSS ID Pw 2 1 max 1 DPAK STD6N62K3 620 V < 1.28 ? 5.5 A 90 W IPAK STF6N62K3 620 V < 1.28 ? 5.5 A(1) 25 W STP6N62K3 620 V < 1.28 ? 5.5 A 90 W STU6N62K3 620 V < 1.28 ? 5.5 A 90 W 1. Limited by package 3 3 2 2 1 100% avala

1.39. std60nf55l.pdf Size:455K _st

D6
D6

STD60NF55L N-CHANNEL 55V - 0.012? - 60A DPAK STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STD60NF55L 55V < 0.015? 60A TYPICAL RDS(on) = 0.012? LOW THRESHOLD DRIVE ADD SUFFIX T4 FOR ORDERING IN TAPE & 3 REEL 1 DPAK DESCRIPTION TO-252 This Power Mosfet is the latest development of STMicroelectronics unique Single Feature Size strip-based process. The resulting tran- sistor

1.40. std65n55f3.pdf Size:441K _st

D6
D6

STD65N55F3 N-channel 55V - 6.5m? - 80A - DPAK STripFET Power MOSFET Features Type VDSS RDS(on) ID Pw STD65N55F3 55V <8.5m? 80A 110W Standard threshold drive 3 100% avalanche tested 1 DPAK Description This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics' unique Single Feature Size strip-based process, which has decreased the critica

1.41. std60nf3ll.pdf Size:403K _st

D6
D6

STD60NF3LL N-channel 30V - 0.0075? - 60A - DPAK STripFET II Power MOSFET General features Type VDSS RDS(on) ID STD60NF3LL 60V <0.0095? 60A Optimal RDS(ON) x Qg trade-off @ 4.5V 3 Conduction losses reduced 1 Switching losses reduced DPAK Description This application specific Power MOSFET is the third genaration of STMicroelectronics unique Single Feature Size strip-based

1.42. pd60015.pdf Size:67K _st

D6
D6

PD60015 PD60015S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA Designed for GSM / EDGE / IS-97 applications EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 15 W with 10 dB gain @ 2000 MHz PowerSO-10RF DESCRIPTION (formed lead) The PD60015 is a common source N-Channel, en- ORDER CODE BRANDING hancement-mode lateral Field-Effect RF power PD60015 PD6

1.43. bd677a_bd679a_bd681_bd678a_bd680a_bd682.pdf Size:87K _st

D6
D6

BD677/A/679/A/681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION LINEAR AND SWITCHING INDUSTRIAL 1 2 EQUIPMENT 3 SOT-32 DESCRIPTION The BD677, BD677A, BD679, BD679A and BD681 are silicon epitax

1.44. std60nf55l-1.pdf Size:438K _st

D6
D6

STD60NF55L STD60NF55L-1 N-channel 55V - 0.012? - 60A - DPAK/IPAK STripFET II Power MOSFET General features Type VDSS RDS(on) ID STD60NF55L-1 55V <0.015? 60A STD60NF55L 55V <0.015? 60A 3 3 Low threshold drive 2 1 1 Description DPAK IPAK This MOSFET is the latest development of STMicroelectronics unique Single Feature Size strip-based process. The resulting transistor sh

1.45. stb6n52k3_std6n52k3_stf6n52k3_stp6n52k3.pdf Size:1153K _st

D6
D6

STB6N52K3, STD6N52K3 STF6N52K3, STP6N52K3 N-channel 525 V, 1 ?, 5 A, D?PAK, DPAK, TO-220FP, TO-220 SuperMESH3 Power MOSFET Features RDS(on) 3 Order codes VDSS ID Pw max 1 3 2 STB6N52K3 5 A 70 W DPAK 1 STD6N52K3 5 A(1) 25 W TO-220FP 525 V < 1.2 ? STF6N52K3 5 A 70 W STP6N52K3 1. Limited by package 3 3 100% avalanche tested 2 1 1 D?PAK TO-220 Extremely high dv/dt cap

1.46. stb6nm60n_std6nm60n_stf6nm60n_stp6nm60n.pdf Size:685K _st

D6
D6

STx6NM60N N-channel 600 V, 0.85 ?, 4.6 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 STB6NM60N 650 V < 0.92 ? 4.6 A 2 2 1 1 STD6NM60N 650 V < 0.92 ? 4.6 A TO-220 TO-220FP STD6NM60N-1 650 V < 0.92 ? 4.6 A 3 1 STF6NM60N 650 V < 0.92 ? 4.6 A (1) D?PAK STP6NM60N 650 V < 0.92 ? 4.6 A 3 3 1 2 1 1. Limited only by

1.47. pd60004.pdf Size:67K _st

D6
D6

PD60004 PD60004S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA Designed for GSM / EDGE / IS-97 applications EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 4 W with 11 dB gain @ 2000 MHz PowerSO-10RF DESCRIPTION (formed lead) The PD60004 is a common source N-Channel, en- ORDER CODE BRANDING hancement-mode lateral Field-Effect RF power PD60004 PD60

1.48. std6n10.pdf Size:344K _st

D6
D6

STD6N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STD6N10 100 V < 0.45 ? 6 A TYPICAL R = 0.35 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 LOW GATE CHARGE 3 2 HIGH CURRENT CAPABILITY 1 1 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION IPAK DPAK THROUGH-HOLE IPAK (TO-251

1.49. bd677_bd677a_bd678_bd678a_bd679_bd679a_bd680_bd680a_bd681_bd682.pdf Size:41K _st

D6
D6

BD677/A/679/A681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration mounted in Jedec SOT-32 plastic package. They are intended for use in medium power linar and switching applications 1 2 Th

1.50. std60nh03l_std60nh03l-1.pdf Size:540K _st

D6
D6

STD60NH03L STD60NH03L-1 N-channel 30V - 0.0075? - 60A - DPAK/IPAK STripFET III Power MOSFET General features Type VDSS RDS(on) ID STD60NH03L-1 30V <0.009? 60A STD60NH03L 30V <0.009? 60A 3 3 2 1 RDS(ON) x Qg industrys benchmark 1 Conduction losses reduced DPAK IPAK Switching losses reduced Low threshold device Description The device utilizes the latest advanced design

1.51. sd60030.pdf Size:32K _st

D6
D6

SD60030 RF POWER TRANSISTORS The LdmoST FAMILY TARGET DATA Designed for GSM / EDGE / IS-97 applications EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 30 W with 10 dB gain @ 2000 MHz M243 epoxy sealed ORDER CODE BRANDING DESCRIPTION SD60030 SD60030 The SD60030 is a common source N-Channel en- hancement-mode lateral Field-Effect RF power transistor designed fo

1.52. sti6n62k3_stp6n62k3_stu6n62k3_stf6n62k3_std6n62k3.pdf Size:1146K _st

D6
D6

STD6N62K3, STF6N62K3 STI6N62K3, STP6N62K3, STU6N62K3 N-channel 620 V, 0.95 ?, 5.5 A SuperMESH3 Power MOSFET in IPAK, DPAK, TO-220,TO-220FP, I?PAK Features RDS(on) 3 Order codes VDSS ID Pw 2 max. 1 3 2 1 IPAK STD6N62K3 90 W I?PAK STF6N62K3 30 W 3 STI6N62K3 620 V < 1.2 ? 5.5 A 90 W 1 STP6N62K3 90 W DPAK STU6N62K3 90 W 100% avalanche tested 3 3 2 1 2 1 Extremely hig

1.53. stgd6nc60h.pdf Size:477K _st

D6
D6

STGD6NC60H N-channel 600V - 7A - DPAK Very fast PowerMESH IGBT General features IC VCE(sat)Max Type VCES @25C @100C STGD6NC60H 600V <2.5V 7A Low on voltage drop (Vcesat) 3 1 Low CRES / CIES ratio (no cross-conduction susceptibility) DPAK High frequency operation Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics ha

1.54. stb60n55f3_std60n55f3_stf60n55f3_sti60n55f3_stu60n55f3_stp60n55f3.pdf Size:624K _st

D6
D6

STB60N55F3, STD60N55F3, STF60N55F3 STI60N55F3, STP60N55F3, STU60N55F3 N-channel 55 V, 6.5 m?, 80 A, DPAK, IPAK, D2PAK, I2PAK, TO-220 TO-220FP STripFET III Power MOSFET Features Type VDSS RDS(on) ID Pw 3 3 2 1 3 1 STB60N55F3 55V <8.5m? 80A 110W 2 1 DPAK IPAK STD60N55F3 55V <8.5m? 80A 110W TO-220FP STF60N55F3 55V <8.5m? 42A 30W STI60N55F3 55V <8.5m? 80A 110W STP60N55F3 55V <8.5

1.55. std65n55lf3.pdf Size:800K _st

D6
D6

STD65N55LF3 N-channel 55 V, 7.0 m?, 80 A DPAK STripFET III Power MOSFET Features RDS(on) Order code VDSS ID Pw max. STD65N55LF3 55 V < 8.5 m? 80 A 110 W 3 Low threshold drive 1 100% avalanche tested DPAK Application Switching applications Automotive Description Figure 1. Internal schematic diagram This product is a N-channel enhancement mode Power MOSFET built with ST

1.56. stgd6nc60hd.pdf Size:475K _st

D6
D6

STGD6NC60HD N-channel 600V - 7A - DPAK Very fast PowerMESH IGBT General features IC VCE(sat)Max Type VCES @25C @100C STGD6NC60HD 600V <2.5V 7A Low on voltage drop (Vcesat) 3 1 Low CRES / CIES ratio (no cross-conduction susceptibility) DPAK Very soft ultra fast recovery antiparallel diode High frequency operation Description Using the latest high voltage technology bas

1.57. std60nf55la.pdf Size:327K _st2

D6
D6

STD60NF55LA N-channel 55V - 0.012Ω - 60A - DPAK STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID STD60NF55LA 55V <0.015Ω 60A ■ Low threshold drive 3 1 Description DPAK This Power MOSFET is the latest development of STMicroelectronics unique “single feature size™” strip-based process. The resulting transistor shows extremely high packing density for

1.58. 2sd648.pdf Size:98K _toshiba

D6
D6

1.59. 2sd687.pdf Size:116K _toshiba

D6
D6

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

1.60. 2sd641.pdf Size:92K _toshiba

D6
D6

1.61. 2sd647_2sd697.pdf Size:102K _toshiba

D6
D6

1.62. 2sd633_2sd635.pdf Size:167K _toshiba

D6
D6

1.63. 2sd688.pdf Size:78K _toshiba

D6
D6

1.64. tk12d60u.pdf Size:196K _toshiba2

D6
D6

TK12D60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ) TK12D60U Switching Regulator Applications Unit: mm 10.0±0.3 A 9.5±0.2 • Low drain-source ON-resistance: RDS (ON) = 0.36 Ω (typ.) 0.6±0.1 Ф3.65±0.2 • High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 600 V) • Enhancement mode: V

1.65. tk15d60u.pdf Size:197K _toshiba2

D6
D6

TK15D60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK15D60U Switching Regulator Applications Unit: mm 10.0±0.3 A 9.5±0.2 • Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.) 0.6±0.1 Ф3.65±0.2 • High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement

1.66. tk20d60u.pdf Size:196K _toshiba2

D6
D6

TK20D60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS?) TK20D60U Switching Regulator Applications Unit: mm 10.0 0.3 A 9.5 0.2 0.60.1 Low drain-source ON-resistance: RDS (ON) = 0.165? (typ.) 3.65 0.2 High forward transfer admittance: ?Yfs? = 12 S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 600 V) Enhancement mode: Vth = 3.0 to 5.0 V

1.67. tk20d60t.pdf Size:254K _toshiba2

D6
D6

TK20D60T 東芝電界効果トランジスタ シリコンNチャネルMOS形 (DTMOS) TK20D60T ○ スイッチングレギュレータ用 単位: mm 10.0±0.3 A 9.5±0.2 0.6±0.1 オン抵抗が低い。 : RDS (ON) = 0.165Ω (標準) Ф3.65±0.2 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 12 S (標準) 漏れ電流が低い。 : IDSS = 100μA (最

1.68. 2sd600.pdf Size:126K _sanyo

D6
D6

Ordering number:346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions High breakdown voltage VCEO 100/120V, High unit:mm current 1A. 2009B Low saturation voltage, excellent hFE linearity. [2SB631, 631K/2SD600, 600K] 1 : Emitter 2 : Collector 3 : Base ( ) : 2SB631, 631K JEDE

1.69. 2sd613.pdf Size:40K _sanyo

D6
D6

Ordering number:513H PNP/NPN Epitaxial Planar Silicon Transistor 2SB633/2SD613 85V/6A, AF 25 to 35W Output Applications Features Package Dimensions High breakdown voltage, VCEO85V, high current 6A. unit:mm AF25 to 35W output. 2010C [2SB633/2SD613] JEDEC : TO-220AB 1 : Base ( ) : 2SB633 EIAJ : SC-46 2 : Collector 3 : Emitter Specifications Absolute Maximum Ratings at Ta = 25?C

1.70. 2sb633p_2sd613p.pdf Size:27K _sanyo

D6
D6

Ordering number : ENN6662 2SB633P/2SD613P PNP / NPN Epitaxial Planar Silicon Transistors 2SB633P / 2SD613P 85V / 6A, AF 35 to 45W Output Applications Features Package Dimensions High breakdown voltage, VCEO 85V, unit : mm high current 6A. 2010C AF 35 to 45W output. [2SB633P / 2SD613P] 10.2 4.5 3.6 5.1 1.3 1.2 0.8 0.4 1 : Base 2 : Collector 1 2 3 3 : Emitter Specificati

1.71. 2sd600k.pdf Size:115K _sanyo

D6
D6

Ordering number:346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions High breakdown voltage VCEO 100/120V, High unit:mm current 1A. 2009B Low saturation voltage, excellent hFE linearity. [2SB631, 631K/2SD600, 600K] 1 : Emitter 2 : Collector 3 : Base ( ) : 2SB631, 631K JEDE

1.72. 2sd612k.pdf Size:303K _sanyo

D6
D6

Ordering number:341G PNP/NPN Epitaxial Planar Silicon Transistor 2SB632, 632K/2SD612, 612K 25V/35V, 2A Low-Frequency Power Amplifier Applications Features Package Dimensions High collector dissipation and wide ASO. unit:mm 2009B [2SB632, 632K/2SD612, 612K] 1 : Emitter 2 : Collector 3 : Base ( ) : 2SB632, 632K JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25?C P

1.73. 2sd627.pdf Size:71K _sanyo

D6
D6

1.74. 2sd612.pdf Size:238K _sanyo

D6
D6

1.75. 2sd621.pdf Size:113K _sanyo

D6
D6

1.76. r07ds0518ej_rjh1cd6dpq.pdf Size:53K _renesas

D6
D6

Preliminary Datasheet RJH1CD6DPQ-E0 R07DS0518EJ0300 1200 V - 25 A - IGBT Rev.3.00 Application: Inverter Nov 21, 2011 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (trr = 100 ns typ.) in one package ? Trench gate and thin wafer technology

1.77. r07ds0175ej_rjh60d6dpm.pdf Size:84K _renesas

D6
D6

Preliminary Datasheet RJH60D6DPM R07DS0175EJ0200 Silicon N Channel IGBT Rev.2.00 Application: Inverter Nov 16, 2010 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ?

1.78. r07ds0164ej_rjh60d6dpk.pdf Size:83K _renesas

D6
D6

Preliminary Datasheet RJH60D6DPK R07DS0164EJ0300 Silicon N Channel IGBT Rev.3.00 Application: Inverter Nov 16, 2010 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ?

1.79. r07ds0452ej_rjh1cd6dpq.pdf Size:53K _renesas

D6
D6

Preliminary Datasheet RJH1CD6DPQ-A0 R07DS0452EJ0100 1200 V - 20 A - IGBT Rev.1.00 Application: Inverter Jul 22, 2011 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (trr = 100 ns typ.) in one package ? Trench gate and thin wafer technology

1.80. fqd6n60c.pdf Size:678K _fairchild_semi

D6
D6

QFET FQD6N60C 600V N-Channel MOSFET Features Description 4 A, 600 V, RDS(on) = 2.0 ? @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 16 nC ) stripe, DMOS technology. This advanced technology has been especially tailored to Low Crss ( typical 7 pF) minimize on-state resistanc

1.81. fdd6680a.pdf Size:200K _fairchild_semi

D6
D6

February 2000 FDD6680A ? ? ? ? N-Channel, Logic Level, PowerTrench? MOSFET Features General Description This N-Channel Logic level MOSFET is produced using 56 A, 30 V. RDS(ON) = 0.0095 ? @ VGS = 10 V Fairchild Semiconductor's advanced PowerTrench process RDS(ON) = 0.0130 ? @ VGS = 4.5 V. that has been especially tailored to minimize the on-state resistance and yet maintain low gat

1.82. fdd6n50tm_f085.pdf Size:941K _fairchild_semi

D6
D6

November 2010 FDD6N50TM_F085 500V N-Channel MOSFET Features Description • 6A, 500V, RDS(on) = 0.9Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( typical 12.8 nC) stripe, DMOS technology. • Low Crss ( typical 9 pF) This advanced technology has been especially tailored to

1.83. fdd6796a_fdu6796a_f071.pdf Size:319K _fairchild_semi

D6
D6

March 2009 FDD6796A / FDU6796A_F071 N-Channel PowerTrench MOSFET 25 V, 5.7 m? Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 5.7 m? at VGS = 10 V, ID = 20 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 15.0 m? at VGS = 4.5 V, ID = 15.2 A synchronous or conventional switching PWM controllers. It has

1.84. fdd6688_fdu6688.pdf Size:120K _fairchild_semi

D6
D6

June 2004 FDD6688/FDU6688 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 84 A, 30 V. RDS(ON) = 5 m? @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 6 m? @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Low gate charge low gate c

1.85. fdd6680.pdf Size:199K _fairchild_semi

D6
D6

July 1999 FDD6680 N-Channel Logic Level PWM Optimized PowerTrench MOSFET Features General Description This N-Channel Logic level MOSFET has been designed 55 A, 30 V. RDS(on) = 0.010 ? @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(on) = 0.015 ? @ VGS = 4.5 V. converters using either synchronous or conventional switching PWM controllers. Optimized for use i

1.86. fdd6637_f085.pdf Size:345K _fairchild_semi

D6
D6

December 2010 FDD6637_F085 P-Channel PowerTrench® MOSFET -35V, -21A, 18mΩ Applications Features Typ rDS(on) = 9.7mΩ at VGS = -10V, ID =- 14A Inverter Typ rDS(on) = 14.4mΩ at VGS = -4.5V, ID =- 11A Power Supplies Typ Qg(10) = 45nC at VGS = -10V High performance trench technology for extremely low rDS(on). Qualified to AEC Q101 RoHS Compliant ©2010 Fairchild Sem

1.87. fdd6685.pdf Size:181K _fairchild_semi

D6
D6

May 2011 FDD6685 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 40 A, 30 V. RDS(ON) = 20 m? @ VGS = 10 V RDS(ON) = 30 m? @ VGS = 4.5 V Fairchild Semiconductors advanced PowerTrench Fast switching speed process. It has been optimized for power management applications requiring a wide range of gave drive

1.88. fdd6n20tm.pdf Size:618K _fairchild_semi

D6
D6

November 2013 FDD6N20TM N-Channel UniFETTM MOSFET 200 V, 4.5 A, 800 mΩ Features Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage • RDS(on) = 600 mΩ (Typ.) @ VGS = 10 V, ID = 2.3 A MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 4.7 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching p

1.89. fcd600n60z.pdf Size:606K _fairchild_semi

D6
D6

November 2013 FCD600N60Z N-Channel SuperFET® II MOSFET 600 V, 7.4 A, 600 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 510 mΩ charge balance technology for outstanding low on-resistance • Ultra Low Gate Charge (Typ. Qg = 20 nC) and lo

1.90. fdd6n20_fdu6n20.pdf Size:376K _fairchild_semi

D6
D6

May 2007 UniFETTM FDD6N20 / FDU6N20 tm N-Channel MOSFET 200V, 4.5A, 0.8? Features Description RDS(on) = 0.6? ( Typ. )@ VGS = 10V, ID = 2.3A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 4.7nC ) stripe, DMOS technology. Low Crss ( Typ. 6.3pF ) This advanced technology has been especiall

1.91. fdd6778a.pdf Size:313K _fairchild_semi

D6
D6

January 2009 FDD6778A N-Channel PowerTrench MOSFET 25 V, 14.0 m? Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 14.0 m? at VGS = 10 V, ID = 10.0 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 30.0 m? at VGS = 4.5 V, ID = 9.7 A synchronous or conventional switching PWM controllers. It has been opti

1.92. fcd620n60zf.pdf Size:619K _fairchild_semi

D6
D6

November 2013 FCD620N60ZF N-Channel SuperFET® II FRFET® MOSFET 600 V, 7.3 A, 620 mΩ Features Description • 650 V @ TJ = 150oC SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 528 mΩ charge balance technology for outstanding low on-resistance • Ultra Low Gate Charge (Typ. Qg = 20 nC)

1.93. fdd6296_fdu6296.pdf Size:105K _fairchild_semi

D6
D6

June 2004 FDD6296/FDU6296 30V N-Channel Fast Switching PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 50A, 30 V RDS(ON) = 8.8 m? @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 11.3 m? @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Low gate

1.94. fdd6770a.pdf Size:310K _fairchild_semi

D6
D6

January 2009 FDD6770A N-Channel PowerTrench MOSFET 25 V, 4.0 m? Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 4.0 m? at VGS = 10 V, ID = 24 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 8.0 m? at VGS = 4.5 V, ID = 18.4 A synchronous or conventional switching PWM controllers. It has been optimize

1.95. fdd6680as.pdf Size:327K _fairchild_semi

D6
D6

April 2008 FDD6680AS tm 30V N-Channel PowerTrench SyncFET General Description Features The FDD6680AS is designed to replace a single 55 A, 30 V RDS(ON) max= 10.5 m? @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) max= 13.0 m? @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low Includes SyncF

1.96. fdd6637.pdf Size:121K _fairchild_semi

D6
D6

August 2006 FDD6637 35V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been produced using 55 A, 35 V RDS(ON) = 11.6 m? @ VGS = 10 V Fairchild Semiconductors proprietary PowerTrench RDS(ON) = 18 m? @ VGS = 4.5 V technology to deliver low Rdson and optimized Bvdss High performance trench technology for extremely capability to offer super

1.97. fdd6630a.pdf Size:68K _fairchild_semi

D6
D6

April 2001 FDD6630A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 21 A, 30 V R = 35 m? @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 50 m? @ V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for Low gate charge

1.98. fdd6690a.pdf Size:117K _fairchild_semi

D6
D6

July 2003 FDD6690A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild 46 A, 30 V RDS(ON) = 12 m? @ VGS = 10 V Semiconductors advanced PowerTrench process that RDS(ON) = 14 m? @ VGS = 4.5 V has been especially tailored to minimize the on state resistance and yet maintain low gate charge for Low gate charge superior switch

1.99. fdd6760a.pdf Size:323K _fairchild_semi

D6
D6

January 2009 FDD6760A N-Channel PowerTrench MOSFET 25 V, 3.2 m? Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 3.2 m? at VGS = 10 V, ID = 27 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 6.0 m? at VGS = 4.5 V, ID = 21 A synchronous or conventional switching PWM controllers. It has been optimized

1.100. fdd6688.pdf Size:120K _fairchild_semi

D6
D6

June 2004 FDD6688/FDU6688 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 84 A, 30 V. RDS(ON) = 5 mΩ @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 6 mΩ @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for • Low gate charge

1.101. fdd6n50_fdu6n50.pdf Size:851K _fairchild_semi

D6
D6

January 2006 TM UniFET FDD6N50/FDU6N50 500V N-Channel MOSFET Features Description 6A, 500V, RDS(on) = 0.9? @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 12.8 nC) stripe, DMOS technology. Low Crss ( typical 9 pF) This advanced technology has been especially tailored to

1.102. fdd6612a_fdu6612a.pdf Size:122K _fairchild_semi

D6
D6

February 2004 FDD6612A/FDU6612A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 30 A, 30 V RDS(ON) = 20 m? @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 28 m? @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Low gate charge low

1.103. fdd6n25_fdu6n25.pdf Size:713K _fairchild_semi

D6
D6

February 2007 TM UniFET FDD6N25 / FDU6N25 250V N-Channel MOSFET Features Description 4.4A, 250V, RDS(on) = 1.1? @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 4.5 nC) stripe, DMOS technology. Low Crss ( typical 5 pF) This advanced technology has been especially tailored to

1.104. fdd6030l.pdf Size:117K _fairchild_semi

D6
D6

August 2003 FDD6030L 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild 12 A, 30 V RDS(ON) = 14.5 m? @ VGS = 10 V Semiconductors advanced PowerTrench process that RDS(ON) = 21 m? @ VGS = 4.5 V has been especially tailored to minimize the on state resistance and yet maintain low gate charge for Low gate charge superior sw

1.105. bd676a_bd678a_bd680a_bd682.pdf Size:42K _fairchild_semi

D6
D6

BD676A/678A/680A/682 Medium Power Linear and Switching Applications Medium Power Darlington TR Complement to BD675A, BD677A, BD679A and BD681 respectively TO-126 1 PNP Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BD676A - 45 V : BD678A - 60 V : BD68

1.106. fdd6682_dss20201l.pdf Size:121K _fairchild_semi

D6
D6

June 2004 FDD6682/FDU6682 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 75 A, 30 V RDS(ON) = 6.2 m? @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 8.0 m? @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Low gate charge low gate

1.107. fdd6670a.pdf Size:109K _fairchild_semi

D6
D6

July 2005 FDD6670A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 66 A, 30 V RDS(ON) = 8 m? @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 10 m? @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Low gate charge low gate charge,

1.108. fdd6635.pdf Size:199K _fairchild_semi

D6
D6

February 2007 tm FDD6635 35V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been produced using Fairchild Semiconductors proprietary PowerTrench 59 A, 35 V RDS(ON) = 10 m? @ VGS = 10 V technology to deliver low Rdson and optimized Bvdss RDS(ON) = 13 m? @ VGS = 4.5 V capability to offer superior performance benefit in the Fast Switc

1.109. fqd6n50c_fqu6n50c.pdf Size:757K _fairchild_semi

D6
D6

October 2008 QFET FQD6N50C / FQU6N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 500V, RDS(on) = 1.2 ? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge (typical 19nC) planar stripe, DMOS technology. Low Crss (typical 15pF) This advanced technology has been especially tailored to

1.110. bd675a_bd677a_bd679a_bd681.pdf Size:39K _fairchild_semi

D6
D6

BD675A/677A/679A/681 Medium Power Linear and Switching Applications Medium Power Darlington TR Complement to BD676A, BD678A, BD680A and BD682 respectively TO-126 1 NPN Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BD675A 45 V : BD677A 60 V : BD679A 80

1.111. fdd6n50f_fdu6n50f.pdf Size:648K _fairchild_semi

D6
D6

July 2007 UniFETTM FDD6N50F / FDU6N50F tm N-Channel MOSFET 500V, 5.5A, 1.15? Features Description RDS(on) = 0.95? ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Failchilds proprietary, planar Low gate charge ( Typ. 15nC) stripe, DMOS technology. Low Crss ( Typ. 6.3pF) This advance technology has been especiall

1.112. fdd6296.pdf Size:105K _fairchild_semi

D6
D6

June 2004 FDD6296/FDU6296 30V N-Channel Fast Switching PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 50A, 30 V RDS(ON) = 8.8 mΩ @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 11.3 mΩ @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for

1.113. fqd6n25_fqu6n25.pdf Size:798K _fairchild_semi

D6
D6

October 2008 QFET FQD6N25 / FQU6N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 4.4A, 250V, RDS(on) = 1.0? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.6 nC) planar stripe, DMOS technology. Low Crss ( typical 7.5 pF) This advanced technology has been especially tailored t

1.114. fdd6780a_fdu6780a_f071.pdf Size:331K _fairchild_semi

D6
D6

January 2009 FDD6780A / FDU6780A_F071 N-Channel PowerTrench MOSFET 25 V, 8.6 m? Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 8.6 m? at VGS = 10 V, ID = 16.4 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 19.0 m? at VGS = 4.5 V, ID = 12.2 A synchronous or conventional switching PWM controllers. It

1.115. fqd6n40c_fqu6n40c.pdf Size:654K _fairchild_semi

D6
D6

October 2008 QFET FQD6N40C / FQU6N40C 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 400V, RDS(on) = 1.0 ? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 16nC) planar stripe, DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to

1.116. fdd6530a.pdf Size:82K _fairchild_semi

D6
D6

July 2001 FDD6530A ? 20V N-Channel PowerTrench? MOSFET General Description Features This N-Channel MOSFET has been designed 21 A, 20 V RDS(ON) = 32 m? @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 47 m? @ VGS = 2.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Low gate charge (6.5 nC typi

1.117. ga500td60u.pdf Size:231K _international_rectifier

D6
D6

PD - 50048C GA500TD60U Ultra-FastTM Speed IGBT "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Features VCES = 600V Generation 4 IGBT technology UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 VCE(on) typ. = 1.9V kHz in resonant mode Very low conduction and switching losses @VGE = 15V, IC = 500A HEXFRED antiparallel diodes with ultra- soft recove

1.118. ga400td60u.pdf Size:232K _international_rectifier

D6
D6

PD - 50059C GA400TD60U Ultra-FastTM Speed IGBT "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Features Features Features Features Features VCES = 600V Generation 4 IGBT technology UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 VCE(on) typ. = 1.70V kHz in resonant mode Very low conduction and switching losses @VGE = 15V, IC = 400A HEXFRED anti

1.119. ga300td60u.pdf Size:239K _international_rectifier

D6
D6

PD -50057D GA300TD60U Ultra-FastTM Speed IGBT "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Features VCES = 600V Generation 4 IGBT technology UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 VCE(on) typ. = 1.80V kHz in resonant mode Very low conduction and switching losses @VGE = 15V, IC = 300A HEXFRED antiparallel diodes with ultra- soft recove

1.120. phkd6n02lt.pdf Size:172K _nxp

D6
D6

PHKD6N02LT Dual N-channel TrenchMOS logic level FET Rev. 04 — 27 April 2010 Product data sheet 1. Product profile 1.1 General description Dual logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2

1.121. umd6n_imd6a_d6_sot23-6sot363.pdf Size:66K _rohm

D6
D6

Transistors General purpose (dual digital transistors) UMD6N / IMD6A FFeatures FExternal dimensions (Units: mm) 1) Both the DTA143T chip and DTC143T chip in a UMT or SMT package. 2) Mounting possible with UMT3 or SMT3 automatic mounting ma- chines. 3) Transistor elements are indepen- dent, eliminating interference. 4) Mounting cost and area can be cut in half. FStructure A PNP and

1.122. umd6n.pdf Size:67K _rohm

D6
D6

EMD6 / UMD6N / IMD6A Transistors General purpose (dual digital transistors) EMD6 / UMD6N / IMD6A Features External dimensions (Units : mm) 1) Both the DTA143T chip and DTC143T chip in an EMT EMD6 or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 (4) (3) (5) (2) automatic mounting machines. (6) (1) 1.2 1.6 3) Transistor elements are independent, eliminati

1.123. emd6_umd6n_imd6a.pdf Size:67K _rohm

D6
D6

EMD6 / UMD6N / IMD6A Transistors General purpose (dual digital transistors) EMD6 / UMD6N / IMD6A Features External dimensions (Units : mm) 1) Both the DTA143T chip and DTC143T chip in an EMT EMD6 or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 (4) (3) (5) (2) automatic mounting machines. (6) (1) 1.2 1.6 3) Transistor elements are independent, eliminati

1.124. zxtd09n50de6_d619sot23-6.pdf Size:159K _diodes

D6
D6

ZXTD09N50DE6 E6 SuperSOT DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 160m ; IC= 1A DESCRIPTION A dual NPN low saturation transistor combination contained in a single 6 lead SOT23 package. Each transistor is the equivalent to the ZUMT619 device. FEATURES SOT23-6 Low Equivalent On Resistance Low Saturation Voltage IC=1A Continuous Collector Cu

1.125. zxmd63c02x.pdf Size:322K _diodes

D6
D6

ZXMD63C02X 20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL: V =20V; R =0.13 ; I =2.4A (BR)DSS DS(ON) D P-CHANNEL: V =-20V; R =0.27 ; I =-1.7A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency,

1.126. zxmd63p03x.pdf Size:339K _diodes

D6
D6

ZXMD63P03X DUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.185V; ID=-2.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on-resist

1.127. zxmd63n02x.pdf Size:156K _diodes

D6
D6

ZXMD63N02X DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =20V; R =0.13?; I =2.4A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on-re

1.128. dmp22d6ut.pdf Size:135K _diodes

D6
D6

DMP22D6UT P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case: SOT-523 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020D Fast Switching

1.129. zxmd63p02x.pdf Size:204K _diodes

D6
D6

ZXMD63P02X DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =-20V; R =0.27 ; I =-1.7A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on-

1.130. zxmd63n03x.pdf Size:332K _diodes

D6
D6

ZXMD63N03X DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.135 ; ID=2.3A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on-resistan

1.131. zxtd618mc.pdf Size:222K _diodes

D6
D6

A Product Line of Diodes Incorporated ZXTD618MC DUAL 20V NPN LOW SATURATION SWITCHING TRANSISTOR Features and Benefits Mechanical Data BVCEO > 20V Case: DFN3020B-3 IC = 4.5A Continuous Collector Current Case material: Molded Plastic. Green Molding Compound. Low Saturation Voltage (150mV @ 1A) Terminals: Pre-Plated NiPdAu leadframe. RSAT = 47m? for a Low Equivalent On-

1.132. zxtd6717e6.pdf Size:118K _diodes

D6
D6

ZXTD6717E6 COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS SUMMARY NPN: VCEO=15V; VCE(sat)=0.1V; IC= 1.5A; PNP: VCEO=-12V; VCE(sat)=-0.175V; IC= -1.25A; DESCRIPTION This new combination device comprises a complementary NPN and PNP low saturation transistor housed in the SOT23-6 package. Users benefit from very efficient performance combining a high current operation, exceptionally lo

1.133. zxtd619mc.pdf Size:216K _diodes

D6
D6

A Product Line of Diodes Incorporated ZXTD619MC DUAL 50V NPN LOW SATURATION SWITCHING TRANSISTOR Features and Benefits Mechanical Data BVCEO > 50V Case: DFN3020B-8 IC = 4A Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound. Low Saturation Voltage (100mV max @ 1A) Terminals: Pre-Plated NiPdAu leadframe. RSAT = 68m? for Low Equivalent On

1.134. zxtd617mc.pdf Size:193K _diodes

D6
D6

A Product Line of Diodes Incorporated ZXTD617MC DUAL 15V NPN LOW SATURATION TRANSISTORS Features and Benefits Mechanical Data BVCEO > 15V Case: DFN3020B-8 IC = 4.5A Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound. Low Saturation Voltage (100mV max @ 1A) Terminals: Pre-Plated NiPdAu leadframe RSAT = 45 m? for a Low Equivalent On-Resi

1.135. zxmd63c03x.pdf Size:378K _diodes

D6
D6

ZXMD63C03X 30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL: V(BR)DSS=30V; RDS(ON)=0.135 ; ID=2.3A P-CHANNEL: V(BR)DSS=-30V; RDS(ON)=0.185 ; ID=-2.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage

1.136. ipd60r750e6_2.0_.pdf Size:2043K _infineon

D6
D6

MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 # 4 !GGD+ - 1Y # .GO=J 2J9FKAKLGJ '.P 0 # " 9L9 1 @==L 0 =N Final 'F )>.;?6?@<> & ' && ' IPA60R750E6 1 Descripti?n !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJAF=GF 2=;

1.137. ipd60r1k4c6_2.0.pdf Size:1322K _infineon

D6
D6

MOSFET + )>.;?6?@<> & ' ! 1 Descripti?n !FFC+ , 0X @J 8 IP =FI ?@>? MFCK8>< GFNE<; 8::FI;@E> KF K?< JLG@1.138. ipd600n25n3grev2.3.pdf Size:486K _infineon

D6
D6

IPD600N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 250 V N-channel, normal level RDS(on),max 60 mW Excellent gate charge x R product (FOM) DS(on) ID 25 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Halogen-free according to IEC61249-2-21 I

1.139. ipd640n06l_g_rev1.4.pdf Size:993K _infineon

D6
D6

% # ! % (>.;?6?@<> %><1A0@ 'A::.>E Features D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?> 4 mW D n) m x P ( 381>>5< 5>81>35=5>C 7 C5=@5A1CDA5 P E1<1>385 A1C54 P *2 6A55 <514 @<1C9>7 + ?", 3?=@<91>C Type #* ( & ! Type Package G? O ? #* ( & ! 4 N G? O ? Marking ".D6:A: >.@6;4? 1C S D><5BB ?C85AF9B5 B@5396954 j Parameter Symb

1.140. ipd60r450e6_2_0.pdf Size:2131K _infineon

D6
D6

MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 # 4 !GGD+ - 1Y # .GO=J 2J9FKAKLGJ '.P 0 # " 9L9 1 @==L 0 =N Final 'F )>.;?6?@<> & ' && ' IPA60R450E6 1 Descripti?n !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJAF=GF 2=;

1.141. ipd60r380c6_2_0.pdf Size:1213K _infineon

D6
D6

MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 ! 4 !GGD+ - 1Y ! .GO=J 2J9FKAKLGJ '.P 0 ! " 9L9 1 @==L 0 =N Final 'FGJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJ1.142. ipd60r600c6_2_0.pdf Size:1051K _infineon

D6
D6

MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 ! 4 !GGD+ - 1Y ! .GO=J 2J9FKAKLGJ '.P 0 ! " 9L9 1 @==L 0 =N Final 'FGJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJAF=GF 2=

1.143. ipd65r600e6_2_0.pdf Size:1867K _infineon

D6
D6

MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 # 4 !GGD+ - 1Y # .GO=J 2J9FKAKLGJ '.P 0 # " 9L9 1 @==L 0 =N $AF9D 'F )>.;?6?@<> & ' && ' IPA65R600E6 1 Descripti?n !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJAF=GF 2=;

1.144. ipb65r600c6_ipa65r600c6_ipp65r600c6_ipd65r600c6_ipi65r600c6.pdf Size:2092K _infineon

D6
D6

MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 ! 4 !GGD+ - 1Y ! .GO=J 2J9FKAKLGJ '.P 0 ! " 9L9 1 @==L 0 =N $AF9D 'F>;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R600C6 1 Descripti?n !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJ1.145. ipd60r520c6_2.0.pdf Size:917K _infineon

D6
D6

MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 ! 4 !GGD+ - 1Y ! .GO=J 2J9FKAKLGJ '.P 0 ! " 9L9 1 @==L 0 =N $AF9D 'F )>.;?6?@<> & ' && ' IPA60R520C6 1 Descripti?n !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJAF=GF 2=;

1.146. ipd60r385cp_rev2_2[1].pdf Size:670K _infineon

D6
D6

IPD60R385CP C??IMOS #:A0< &<,9=4=>:< #<:/?.> %?88,1.147. ipd60r600cp_rev2[1].0.pdf Size:645K _infineon

D6
D6

IPD60R600CP C??IMOS #:A0< &<,9=4=>:< #<:/?.> %?88,H / L . ON g 1j X 0.6 !0 DC B6L U 2 AHF6 ADK <6H: 8=6F<: 21 nC g typ U "LHF:B: 9J 9H F6H:9 U %><= E:6@ 8IFF:CH 86E67>A>HM U . I6A>;>:9 for industrial grade applications 688DF9>C< HD '"!" U -7 ;F:: A:69 EA6H>C< / D%0 8DBEA>6CH; Halogen free mold compound PG?TO252 ::7!"% #

1.148. ipd65r380e6_2_0.pdf Size:1898K _infineon

D6
D6

MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 # 4 !GGD+ - 1Y # .GO=J 2J9FKAKLGJ '.P 0 # " 9L9 1 @==L 0 =N $AF9D 'F )>.;?6?@<> & ' && ' IPA65R380E6 1 Descripti?n !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJAF=GF 2=;

1.149. ipd60r950c6_2.1.pdf Size:1680K _infineon

D6
D6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R950C6 Data Sheet Rev. 2.1, 2010-03-11 Final Industrial & Multimarket 600V CoolMOS C6 Power Transistor IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction

1.150. ipd60r3k3c6_2.0.pdf Size:1347K _infineon

D6
D6

MOSFET + )>.;?6?@<> & ' ! 1 Descripti?n !FFC+ , 0X @J 8 IP =FI ?@>? MFCK8>< GFNE<; 8::FI;@E> KF K?< JLG@1.151. ipd60r2k0c6_2.0.pdf Size:1300K _infineon

D6
D6

MOSFET + )>.;?6?@<> & ' ! 1 Descripti?n !FFC+ , 0X @J 8 IP =FI ?@>? MFCK8>< GFNE<; 8::FI;@E> KF K?< JLG@1.152. ipw65r660cfd_ipb65r660cfd_ipi65r660cfd_ipa65r660cfd_ipp65r660cfd_ipd65r660cfd.pdf Size:4455K _infineon

D6
D6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPx65R660CFD Data Sheet Rev. 2.4 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R660CFD, IPB65R660CFD, IPP65R660CFD IPA65R660CFD, IPD65R660CFD, IPI65R660CFD TO-247 D?PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage p

1.153. ipd65r380c62.1.pdf Size:1905K _infineon

D6
D6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R380C6 Data Sheet Rev. 2.1, 2011-02-17 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPD65R380C6, IPI65R380C6 IPB65R380C6, IPP65R380C6 IPA65R380C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to th

1.154. ipd65r600c6_2_0.pdf Size:2092K _infineon

D6
D6

MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 ! 4 !GGD+ - 1Y ! .GO=J 2J9FKAKLGJ '.P 0 ! " 9L9 1 @==L 0 =N $AF9D 'F>;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R600C6 1 Descripti?n !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJ1.155. ipd60r600e6_2_0.pdf Size:1339K _infineon

D6
D6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R600E6 Data Sheet Rev. 2.0, 2010-04-12 Final Industrial & Multimarket 600V CoolMOS E6 Power Transistor IPD60R600E6, IPP60R600E6 IPD60R600E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principl

1.156. ipd60r520cp_rev2.0.pdf Size:647K _infineon

D6
D6

IPD60R520CP C??IMOSTM #:A0< &<,9=4=>:< #<:/?.> %?88,H / L . ON g 1? X 0.520 !0 DC B6L U 2 AHF6 ADK <6H: 8=6F<: 24 nC g typ U "LHF:B: 9J 9H F6H:9 U %><= E:6@ 8IFF:CH 86E67>A>HM U . I6A>;>:9 688DF9>C< HD '"!" U -7 ;F:: A:69 EA6H>C< / D%0 8DBEA>6CH PG?TO252 ::7!"% # 4= /0=4290/ 1:< U %6F9 GK>H8=>C< 0* -0 HDEDAD<>:G Type Pac

1.157. ntmd6p02r2-d.pdf Size:77K _onsemi

D6
D6

NTMD6P02R2 Preferred Device Power MOSFET 6 Amps, 20 Volts P-Channel SOIC-8, Dual Features Ultra Low RDS(on) Higher Efficiency Extending Battery Life http://onsemi.com Logic Level Gate Drive Miniature Dual SOIC-8 Surface Mount Package 6 AMPERES, 20 VOLTS Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified P-Channel SOIC-8 Mounting Information Provided D

1.158. ntd60n02r.pdf Size:79K _onsemi

D6
D6

NTD60N02R Power MOSFET 62 A, 25 V, N-Channel, DPAK Features Planar HD3e Process for Fast Switching Performance http://onsemi.com Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss V(BR)DSS RDS(on) TYP ID MAX Low Gate Charge 25 V 8.4 mW @ 10 V 62 A Optimized for High Side Switching Requirements in High-Efficiency DC-DC Converters Pb-Free Packages are A

1.159. ntmsd6n303r2-d.pdf Size:222K _onsemi

D6
D6

NTMSD6N303R2 Power MOSFET 6 Amps, 30 Volts N-Channel SO-8 FETKYt The FETKY product family incorporates low RDS(on) MOSFETs http://onsemi.com packaged with an industry leading, low forward drop, low leakage Schottky Barrier rectifier to offer high efficiency components in a MOSFET space saving configuration. Independent pinouts for MOSFET and 6.0 AMPERES Schottky die allow the flexibilit

1.160. ntmd6n02r2-d.pdf Size:74K _onsemi

D6
D6

NTMD6N02R2 Power MOSFET 6.0 Amps, 20 Volts N-Channel Enhancement Mode Dual SO-8 Package http://onsemi.com Features VDSS RDS(ON) TYP ID MAX Ultra Low RDS(on) 20 V 35 mW @ VGS = 4.5 V 6.0 A Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Dual SOIC-8 Surface Mount Package N-Channel Diode Exhibits High Speed, Soft Recovery D Avalanche Energy Specif

1.161. nid6002n.pdf Size:68K _onsemi

D6
D6

NID6002N Preferred Device Self-Protected FET with Temperature and Current Limit 65 V, 6.5 A, Single N-Channel, DPAK http://onsemi.com HDPlus™ devices are an advanced series of power MOSFETs VDSS ID TYP which utilize ON Semiconductor’s latest MOSFET technology (Clamped) RDS(on) TYP (Limited) process to achieve the lowest possible on-resistance per silicon area while incorporatin

1.162. nimd6001n.pdf Size:206K _onsemi

D6
D6

NIMD6001N, NIMD6001AN Dual N-Channel Driver with Diagnostic Output 60 V, 3 A, 110 mW NIMD6001N/AN is a dual 3 Amp low-side switch with an integrated common disable input and drain diagnostic output. Pulling http://onsemi.com the Disable pin low will override any applied gate voltages and turn off both FET switches. Should either Drain-Source voltage exceed 3.0 AMPERES approximately 50

1.163. mtd6n20e-d.pdf Size:129K _onsemi

D6
D6

MTD6N20E Power MOSFET 6 A, 200 V, N-Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching http://onsemi.com applications in power supplies, converters and PWM motor controls, these devic

1.164. ntqd6968n.pdf Size:86K _onsemi

D6
D6

NTQD6968N Power MOSFET 7.0 A, 20 V, Common Drain, Dual N-Channel, TSSOP-8 Features http://onsemi.com Low RDS(on) Higher Efficiency Extending Battery Life V(BR)DSS RDS(on) TYP ID MAX Logic Level Gate Drive 20 V 17 mW @ 4.5 V 7.0 A 3 mm Wide TSSOP-8 Surface Mount Package High Speed, Soft Recovery Diode N-Channel N-Channel TSSOP-8 Mounting Information Provided D D Pb-Fr

1.165. ntd6416anl.pdf Size:149K _onsemi

D6
D6

NTD6416ANL N-Channel Power MOSFET 100 V, 19 A, 74 mW Features Low RDS(on) http://onsemi.com High Current Capability 100% Avalanche Tested These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX MAXIMUM RATINGS (TJ = 25C unless otherwise noted) 100 V 74 mW @ 10 V 19 A Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 100 V D Gate-to-Source Voltage - Continuous VGS $20 V

1.166. ntd6415anl-d.pdf Size:259K _onsemi

D6
D6

NTD6415ANL N--Channel Power MOSFET 100 V, 23 A, 56 m?, Logic Level Features ? Low RDS(on) http://onsemi.com ? 100% Avalanche Tested ? AEC--Q101 Qualified V(BR)DSS RDS(on) MAX ID MAX ? These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS Compliant 56 m? @4.5 V 100 V 23 A 52 m? @10V MAXIMUM RATINGS (TJ =25?C unless otherwise noted) Parameter Symbol Value Unit D Drain--to-

1.167. msd602-rt1-d.pdf Size:42K _onsemi

D6
D6

MSD602-RT1 Preferred Device NPN General Purpose Amplifier Transistor Surface Mount Features http://onsemi.com Pb-Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS (TA = 25C) Rating Symbol Value Unit Collector-Base Voltage V(BR)CBO 60 Vdc Collector-Emitter Voltage V(BR)CEO 50 Vdc Emitter-Base Voltage V(BR)EBO 7.0 Vdc 2 1 Collector Current - Continuous IC 500 mAdc BASE EMI

1.168. ntmd6601n.pdf Size:95K _onsemi

D6
D6

NTMD6601NR2G Power MOSFET 80 V, 2.2 A, Dual N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http://onsemi.com Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(on) Max Dual SO-8 Surface Mount Package Saves Board Space ID Max This is a Pb-Free Device 215 mW @ 10 V 80 V 2.2 A 245 mW @ 4.5 V Application

1.169. ntmd6n04r2.pdf Size:78K _onsemi

D6
D6

NTMD6N04R2 Power MOSFET 40 V, 5.8 A, Dual N-Channel SOIC-8 Features Designed for use in low voltage, high speed switching applications http://onsemi.com Ultra Low On-Resistance Provides Higher Efficiency and Extends Battery Life - RDS(on) = 0.027 W, VGS = 10 V (Typ) VDSS RDS(ON) Typ ID Max - RDS(on) = 0.034 W, VGS = 4.5 V (Typ) 40 V 27 mW @ VGS = 10 V 5.8 A Miniature SOIC-8 Sur

1.170. ntd65n03r-d.pdf Size:73K _onsemi

D6
D6

NTD65N03R Power MOSFET 25 V, 65 A, Single N-Channel, DPAK Features Low RDS(on) Ultra Low Gate Charge http://onsemi.com Low Reverse Recovery Charge Pb-Free Packages are Available V(BR)DSS RDS(on) TYP ID MAX Applications 6.5 mW @ 10 V 25 V 65 A Desktop CPU Power 9.7 mW @ 4.5 V DC-DC Converters High and Low Side Switch N-Channel D MAXIMUM RATINGS (TJ = 25C unless oth

1.171. ntqd6866r2.pdf Size:144K _onsemi

D6
D6

NTQD6866R2 Power MOSFET 6.9 Amps, 20 Volts N-Channel TSSOP-8 Features New Low Profile TSSOP-8 Package Ultra Low RDS(on) http://onsemi.com Higher Efficiency Extending Battery Life Logic Level Gate Drive 6.9 AMPERES Diode Exhibits High Speed, Soft Recovery 20 VOLTS Avalanche Energy Specified 30 mW @ VGS = 4.5 V IDSS and VDS(on) Specified at Elevated Temperatures Pb-Fre

1.172. ntd6414an.pdf Size:137K _onsemi

D6
D6

NTD6414AN N-Channel Power MOSFET 100 V, 32 A, 37 mW Features Low RDS(on) High Current Capability http://onsemi.com 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS ID MAX Compliant V(BR)DSS RDS(on) MAX (Note 1) MAXIMUM RATINGS (TJ = 25C unless otherwise noted) 100 V 37 mW @ 10 V 32 A Parameter Symbol Value Unit Drain-to-Source Voltage VDSS

1.173. mtd6n15-d.pdf Size:70K _onsemi

D6
D6

MTD6N15 Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This TMOS Power FET is designed for high speed, low loss power switching applications such as switching regulators, converters, http://onsemi.com solenoid and relay drivers. V(BR)DSS RDS(on) MAX ID MAX Features 150 V 0.3 W 6.0 A Silicon Gate for Fast Switching Speeds Low RDS(on) 0

1.174. ntd6415an.pdf Size:138K _onsemi

D6
D6

NTD6415AN N-Channel Power MOSFET 100 V, 23 A, 55 mW Features Low RDS(on) High Current Capability http://onsemi.com 100% Avalanche Tested These Devices are Pb-Free and are RoHS Compliant ID MAX V(BR)DSS RDS(on) MAX (Note 1) MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Symbol Value Unit 100 V 55 mW @ 10 V 23 A Drain-to-Source Voltage VDSS 100 V Gate-to-Source V

1.175. ntd6416an.pdf Size:141K _onsemi

D6
D6

NTD6416AN N-Channel Power MOSFET 100 V, 17 A, 81 mW Features Low RDS(on) High Current Capability http://onsemi.com 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS ID MAX Compliant V(BR)DSS RDS(on) MAX (Note 1) MAXIMUM RATINGS (TJ = 25C unless otherwise noted) 100 V 81 mW @ 10 V 17 A Parameter Symbol Value Unit Drain-to-Source Voltage VDSS

1.176. msd601-rt1-d.pdf Size:42K _onsemi

D6
D6

MSD601-RT1, MSD601-ST1 Preferred Device NPN General Purpose Amplifier Transistors Surface Mount Features http://onsemi.com Pb-Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS (TA = 25C) Rating Symbol Value Unit Collector - Base Voltage V(BR)CBO 60 Vdc 2 1 BASE EMITTER Collector - Emitter Voltage V(BR)CEO 50 Vdc Emitter - Base Voltage V(BR)EBO 7.0 Vdc MARKING Collector

1.177. ntd6600n-d.pdf Size:64K _onsemi

D6
D6

NTD6600N Power MOSFET 100 V, 12 A, N-Channel, Logic Level DPAK Features Source-to-Drain Diode Recovery Time Comparable to a http://onsemi.com Discrete Fast Recovery Diode Avalanche Energy Specified V(BR)DSS RDS(on) TYP ID MAX Logic Level 100 V 118 mW @ 5.0 V 12 A Pb-Free Packages are Available Typical Applications N-Channel PWM Motor Controls D Power Supplies Conve

1.178. nimd6302r2.pdf Size:158K _onsemi

D6
D6

NIMD6302R2 HDPlus Dual N-Channel Self-protected Field Effect Transistors with 1:200 Current Mirror FET http://onsemi.com HDPlus devices are an advanced series of power MOSFET which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on-resistance per silicon area while 5.0 AMPERES incorporating smart features. They are capable of withstanding high

1.179. ntmd6n03r2.pdf Size:160K _onsemi

D6
D6

NTMD6N03R2 Power MOSFET 30 V, 6 A, Dual N-Channel SOIC-8 Features Designed for use in low voltage, high speed switching applications http://onsemi.com Ultra Low On-Resistance Provides Higher Efficiency and Extends Battery Life VDSS RDS(ON) Typ ID Max - RDS(on) = 0.024 W, VGS = 10 V (Typ) 30 V 24 mW @ VGS = 10 V 6.0 A - RDS(on) = 0.030 W, VGS = 4.5 V (Typ) Miniature SOIC-8 Surface

1.180. 2sd601a_e.pdf Size:43K _panasonic

D6
D6

Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Unit: mm Complementary to 2SB709A +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the

1.181. 2sd662.pdf Size:39K _panasonic

D6
D6

Transistor 2SD662, 2SD662B Silicon NPN epitaxial planer type For high breakdown voltage general amplification Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to emitter voltage VCEO. High transition frequency fT. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 Absolute Maximum Rati

1.182. 2sd638_e.pdf Size:44K _panasonic

D6
D6

Transistor 2SD638, 2SD639 Silicon NPN epitaxial planer type For medium-power general amplification Unit: mm Complementary to 2SB643 and 2SB644 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 Absolute Maxim

1.183. 2sd661.pdf Size:51K _panasonic

D6
D6

Transistor 2SD661, 2SD661A Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 R0.9 Features Low noise voltage NV. High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05 Absolute Ma

1.184. 2sd662_e.pdf Size:43K _panasonic

D6
D6

Transistor 2SD662, 2SD662B Silicon NPN epitaxial planer type For high breakdown voltage general amplification Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to emitter voltage VCEO. High transition frequency fT. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 Absolute Maximum Rati

1.185. 2sd602.pdf Size:40K _panasonic

D6
D6

Transistor 2SD602, 2SD602A Silicon NPN epitaxial planer type For general amplification Unit: mm Complementary to 2SB710 and 2SB710A +0.2 Features 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 1 packing. 3

1.186. 2sd637.pdf Size:46K _panasonic

D6
D6

Transistor 2SD637 Silicon NPN epitaxial planer type For low-power general amplification Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05

1.187. 2sd601.pdf Size:38K _panasonic

D6
D6

Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Unit: mm Complementary to 2SB709A +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the

1.188. 2sd691_2sd692.pdf Size:125K _panasonic

D6
D6

1.189. 2sd693.pdf Size:86K _panasonic

D6
D6

1.190. 2sd661_e.pdf Size:55K _panasonic

D6
D6

Transistor 2SD661, 2SD661A Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 R0.9 Features Low noise voltage NV. High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05 Absolute Ma

1.191. 2sd637_e.pdf Size:51K _panasonic

D6
D6

Transistor 2SD637 Silicon NPN epitaxial planer type For low-power general amplification Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05

1.192. 2sd602_e.pdf Size:44K _panasonic

D6
D6

Transistor 2SD602, 2SD602A Silicon NPN epitaxial planer type For general amplification Unit: mm Complementary to 2SB710 and 2SB710A +0.2 Features 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 1 packing. 3

1.193. 2sd667.pdf Size:160K _utc

D6
D6

UNISONIC TECHNOLOGIES CO., LTD 2SD667 NPN SILICON TRANSISTOR SILICON NPN EPITAXIAL ? DESCRIPTION The UTC 2SD667 is a NPN epitaxial silicon transistor, which can be used as a low frequency power amplifier. ? FEATURES * Low frequency power amplifier ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SD667L-x-T9N-B 2SD667G-x-T9N

1.194. d65h2.pdf Size:50K _utc

D6
D6

UTC D65H2 PNP EXPITAXIAL SILICON TRANSISTOR PNP EXPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC D65H2 is a general purpose power application and switching. FEATURE 1 *Low Collector-Emitter Saturation Voltage VCE(sat)=-1v(MAX)@-15A *Fast Switching Speeds TO-220 1:BASE 2:COLLECTOR 3:EMITTER ABSOLUTE MAXIMUM RATINGS(Ta=25°C) PARAMETER SYMBOL VALUE UNIT Collector to Em

1.195. std6528s.pdf Size:300K _auk

D6
D6

STD6528S Semiconductor Semiconductor NPN Silicon Transistor Application • Micom Direct drive and switching Application Features • Very low saturation voltage: VCE(sat)=0.2V (Max.) @ IC=50mA, IB=5mA • High DC current gain: hFE=1000~2500 Ordering Information Type NO. Marking Package Code STD6528S ZA SOT-23 Outline Dimensions unit : mm 2.20~2.60 1.20~1.40 1 3 2

1.196. std6528ef.pdf Size:319K _auk

D6
D6

STD6528EF NPN Silicon Transistor Application PIN Connection • Micom Direct drive and switching Application Features 3 • Very low saturation voltage: VCE(sat)=0.2V (Max.) 1 @ IC=50mA, IB=5mA • High DC current gain: hFE=1000~2500 2 • Small size SMD package SOT-523F Ordering Information Type NO. Marking Package Code ZB ? STD6528EF SOT-523F ? ? ?Device Code

1.197. bd684_bd683.pdf Size:72K _comset

D6
D6

PNP BD684 NPN BD683 SILICON DARLINGTON POWER TRANSISTORS The BD684 are PNP eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-126 plastic package. NPN complements are BD683 . ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit -VCEO Collector-Emitter Voltage 120 V -VCBO Collector-Base Voltage 120 V -VEBO Emit

1.198. bd644-bd646-bd648-bd650-bd652.pdf Size:363K _comset

D6
D6

SEMICONDUCTORS BD644/646/648/650/652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. NPN complements are BD643, BD645, BD647, BD649 and BD651 ABSOLUTE MAXIMUM RATINGS Symbol Ratings Va

1.199. bd675_bd677_bd679_bd681.pdf Size:88K _comset

D6
D6

NPN BD675/A - BD677/A - BD679/A - BD681/A SILICON DARLINGTON POWER TRANSISTORS The BD675/A-BD677/A-BD679/A-BD681/A are NPN They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-126 plastic package. PNP complements are BD676/A-BD678/A-BD680/A-BD682/A ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BD67

1.200. bd643-bd645-bd647-bd649-bd651.pdf Size:331K _comset

D6
D6

SEMICONDUCTORS BD643/645/647/649/651 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BD644, BD646, BD648, BD650 and BD652 ABSOLUTE MAXIMUM RATINGS Symbol Ratings Va

1.201. bsm75gd60dlc.pdf Size:215K _eupec

D6
D6

Technische Information / Technical Information IGBT-Module BSM 75 GD 60 DLC IGBT-Modules Hochstzulassige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 600 V collector-emitter voltage TC = 70 C IC,nom. 75 A Kollektor-Dauergleichstrom DC-collector current TC = 25 C IC 95 A Periodischer Kollektor Spitzenstrom tP =

1.202. bsm150gd60dlc.pdf Size:136K _eupec

D6
D6

Technische Information / Technical Information IGBT-Module BSM 150 GD 60 DLC IGBT-Modules Hochstzulassige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 600 V collector-emitter voltage Tc= 55C IC,nom. 150 A Kollektor-Dauergleichstrom DC-collector current Tc= 25C IC 180 A Periodischer Kollektor Spitzenstrom tP= 1

1.203. 2sd655.pdf Size:29K _hitachi

D6
D6

2SD655 Silicon NPN Epitaxial Application Low frequency power amplifier, Muting Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SD655 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 15 V Emitter to base voltage VEBO 5V Collector current IC 0.7 A Collector peak current iC(peak) 1.0 A Col

1.204. 2sd669a.pdf Size:36K _hitachi

D6
D6

2SD669, 2SD669A Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB649/A Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 2SD669, 2SD669A Absolute Maximum Ratings (Ta = 25C) Ratings Item Symbol 2SD669 2SD669A Unit Collector to base voltage VCBO 180 180 V Collector to emitter voltage VCEO 120 160 V Emitter to base voltage VEBO 55V

1.205. 2sd667.pdf Size:32K _hitachi

D6
D6

2SD667, 2SD667A Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB647/A Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD667, 2SD667A Absolute Maximum Ratings (Ta = 25C) Item Symbol 2SD667 2SD667A Unit Collector to base voltage VCBO 120 120 V Collector to emitter voltage VCEO 80 100 V Emitter to base voltage VEBO 55V Collec

1.206. 2sd666.pdf Size:413K _hitachi

D6
D6

1.207. 2sd669.pdf Size:32K _hitachi

D6
D6

2SD669, 2SD669A Silicon NPN Epitaxial ADE-208-899 (Z) 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SB649/A Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 2SD669, 2SD669A Absolute Maximum Ratings (Ta = 25C) Ratings Item Symbol 2SD669 2SD669A Unit Collector to base voltage VCBO 180 180 V Collector to emitter voltage VCEO 12

1.208. rd60huf1.pdf Size:380K _mitsubishi

D6
D6

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD60HUF1 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,60W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3 4-C2 1 FEATURES High power and High Gain: Pout>60W,

1.209. 2sd633-35.pdf Size:127K _mospec

D6
D6

A A A

1.210. 2sd673a.pdf Size:38K _no

D6
D6

1.211. 2sd640.pdf Size:91K _no

D6
D6

1.212. 2sd669-669a.pdf Size:236K _secos

D6
D6

2SD669/2SD669A NPN Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-126C 2.7± 0.2 7.6±0.2 FEATURES 1.3± 0.2 4.0±0.1 Power dissipation 10.8±0.2 PCM : 1mW(Tamb=25?) O3.1± 0.1 Collector current 1 2 3 2.2±0.1 ICM : 1.5 A 1.27±0.1 Collector-base voltage 15.5±0.2 V(BR)CBO :

1.213. umd6n.pdf Size:124K _secos

D6
D6

UMD6N Dual NPN+PNP Digital Transistors (Built-in Resistors) Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-363 ? DTA143T(PNP) and DTC143T(NPN) transistors are built-in a package. ? Transistor elements are independent, eliminating interference. A ? Mounting cost and area can be cut in half. E L B EQUIVALEN

1.214. 2sd667a.pdf Size:64K _secos

D6
D6

2SD667A 1A , 120V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92MOD FEATURES A D Low Frequency Power Amplifier Complementary Pair with 2SB647A B K E F CLASSIFICATION OF hFE (1) C Product-Rank 2SD667A-B 2SD667A-C 2SD667A-D Range 60~120 100~200 160~320 N G H 1 Emitter

1.215. ssd60n04-12d.pdf Size:145K _secos

D6
D6

SSD60N04-12D N-Ch Enhancement Mode Power MOSFET 53A, 40V, RDS(ON) 12m? Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench TO-252(D-Pack) process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC

1.216. 2sd602,602a.pdf Size:1177K _secos

D6
D6

2SD602 / 2SD602A NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE Low collector to emitter saturation voltage VCE(sat) A L 3 3 Top View CLASSIFICATION OF hFE (1) C B 1 1 2 Product-Rank 2SD602-Q 2SD602-R 2SD602-S 2 K E Range 85~170 120~240 170~340 D Marking Code WQ1 W

1.217. 2sd601a.pdf Size:52K _secos

D6
D6

2SD601A 0.1A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE High forward current transfer ratio hFE A L Low collector to emitter saturation voltage VCE(sat) 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 2 K E Product-Rank 2SD601A-Q 2SD601A-R 2SD601A-S Range

1.218. kd501_kd502_kd503_kd601_kd602_kd605_kd606_kd607_kd3055_kd3442_kd3772_kd3773_kd4348_kd615_kd616_kd617.pdf Size:121K _tesla

D6
D6

1.219. gd607_gd608_gd609_ad161_gd617_gd618_gd619_ad162_oc30_2nu73_3nu73_4nu73_5nu73_6nu73_7nu73_2nu72_3nu72_4nu72_5nu72_oc26_oc27_2nu74_3nu74_4nu74_5nu74_6nu74_7nu74_gc500_gc501_gc502_gc510_gc511_gc512.pdf Size:171K _tesla

D6
D6

1.220. bd675_bd677_bd679_bd681_bd683.pdf Size:176K _cdil

D6
D6

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER DARLINGTON TRANSISTORS BD675, BD675A BD677, BD677A BD679, BD679A BD681, BD683 TO126 Plastic Package E C B Complementary BD676, 676A, 678, 678A, 680, 680A, 682 & 684 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD675 677 679 681 683 UNITS BD675A 677A 679A VCBO Collector Base

1.221. bd676_bd678_bd680_bd682_bd684_a.pdf Size:117K _cdil

D6
D6

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP DARLIGNTON POWER SILICON TRANSISTORS BD676, 676A BD678, 678A BD680, 680A BD682, 684 TO126 Plastic Package E C B For Use As Output Devices In Complementary General Purpose Amplifier Applications. COMPLEMENTARY TO BD675, 675A, 677, 677A, 679, 679A, 681 & 683 BD678, 678A, 680, 680A ARE EQUI

1.222. cfd611.pdf Size:89K _cdil

D6
D6

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR CFD611 (9AW) TO-220FP MARKING : CFD 611 B C E Designed for Relay Drive and Motor Drive ABSOLUTE MAXIMUM RATINGS (Ta=25deg C) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 110 V Collector Emitter Voltage VCEO 110 V Emitter Base Vol

1.223. csd655.pdf Size:86K _cdil

D6
D6

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CSD655 (9AW) TO-92 BCE Marking : As Below ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 30 V Collector -Emitter Voltage VCEO 15 V Emitter Base Voltage VEBO 5.0 V Collector Current

1.224. csd611.pdf Size:113K _cdil

D6
D6

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR CSD611 (9AW) TO-220 MARKING : CSD 611 Designed for Relay Drive and Motor Drive ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 110 V Collector Emitter Voltage VCEO 110 V Emitter Base Voltage VEBO 5.0

1.225. cld667_a.pdf Size:118K _cdil

D6
D6

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS CLD667, CLD667A TO-92 Plastic Package B C E Low Frequency Power Amplifier Complementary CLB647/CLB647A ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL CLD667 CLD667A UNITS VCBO Collector Base Voltage 120 120 V VCEO Colle

1.226. csb649_a_csd669-a.pdf Size:87K _cdil

D6
D6

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-126 (SOT-32) Plastic Package CSB649, CSB649A CSD669, CSD669A CSB649, 649A PNP PLASTIC POWER TRANSISTORS CSD669, 669A NPN PLASTIC POWER TRANSISTORS Low frequency Power Amplifier PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ALL DIMENSIONS IN MM ABSOLUTE MAXIMUM RATINGS ABSOLUTE MA

1.227. bd680.pdf Size:27K _jmnic

D6
D6

Power Transistors www.jmnic.com BD680 Silicon PNP Transistors Features E C B With TO-126 package In monolithic Darlington configuration This transistor is intended for use in medium power linar and switching applications Complement to type BD679 Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 80 V VCEO Collector to emitter voltag

1.228. kma3d6n20sa.pdf Size:55K _kec

D6
D6

SEMICONDUCTOR KMA3D6N20SA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching E time, low on resistance, low gate charge and excellent avalanche L B L DIM MILLIMETERS characteristics. It is mainly suitable for portable equipment. _ + A 2.93 0.20 B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.40+0.15/-0.05 E 2.40+0.30/-0

1.229. kml0d6np20ea.pdf Size:59K _kec

D6
D6

SEMICONDUCTOR KML0D6NP20EA TECHNICAL DATA N and P-Ch Trench MOSFET General Description It’s Mainly Suitable for Load Switching Cell Phones, Battery Powered B Systems and Level-Shifter. B1 1 6 DIM MILLIMETERS _ A 1.6 + 0.05 FEATURES _ A1 1.0 + 0.05 2 5 _ ·N-Channel B 1.6 + 0.05 _ B1 1.2 + 0.05 : VDSS=20V, ID=600mA (RDS(ON)=0.70? @ VGS=4.5V). C 0.50 3 4 _ D 0.2 + 0.05 : V

1.230. kmb7d6np30q.pdf Size:388K _kec

D6
D6

SEMICONDUCTOR KMB7D6NP30Q TECHNICAL DATA N and P-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for power management in PC, H portable equipment and battery powered systems. T D P G L FEATURES A N-Channel DIM MILLIMETERS : VDSS=30V, ID=7.6A. A 5.05+0.25/-0.20 : RDS(ON)=20m (Max.) @ VGS=10V _ 3.90 + 0.3 B1 8 5 _

1.231. kmb6d6n30q.pdf Size:369K _kec

D6
D6

SEMICONDUCTOR KMB6D6N30Q TECHNICAL DATA N-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for power management in PC, portable equipment and battery powered systems. H T D P G L FEATURES VDSS=30V, ID=6.6A. A Low Drain-Source ON Resistance. DIM MILLIMETERS : RDS(ON)=28m (typ.) @ VGS=10V A 5.05+0.25/-0.20 : RDS(ON)=56m

1.232. kmd6d0dn40q.pdf Size:372K _kec

D6
D6

SEMICONDUCTOR KMD6D0DN40Q TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters. H T D P G L FEATURES A ·VDSS=40V, ID=6A. DIM MILLIMETERS A _ + ·Drain-Source ON Resistance. 4.85 0.2

1.233. ktd600k.pdf Size:393K _kec

D6
D6

SEMICONDUCTOR KTD600K TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW FREQUENCY POWER AMP, A B MEDIUM SPEED SWITCHING APPLICATIONS D C E FEATURES F High breakdown voltage VCEO 120V, high current 1A. Low saturation voltage and good linearity of hFE. G Complementary to KTB631K. H DIM MILLIMETERS J A 8.3 MAX K B 5.8 L C 0.7 _ + D ?3.2 0.1 MAXIMUM RATING (Ta=25 ) E 3.5

1.234. bd645_bd647_bd649_bd651.pdf Size:115K _power-innovations

D6
D6

BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK MAY 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD646, BD648, BD650 and BD652 TO-220 PACKAGE (TOP VIEW) 62.5 W at 25C Case Temperature 8 A Continuous Collector Current B 1 C 2 Minimum hFE of 750 at 3 V, 3 A E 3 Pin 2 is in electrical contact with the mountin

1.235. mgd623s.pdf Size:225K _sanken-ele

D6
D6

IGBT MGD623S July, 2009 Features Package----TO-3P Low Saturation Voltage VCE(sat)=1.8V typ. High Speed tf=120ns typ. Low VF FRD Included VF=1.2V typ. Applications Current Resonance Inverter Switching Induction Heating Cooking Equivalent circuit C (2) G (1) E (3) Absolute maximum ratings (Ta=25C) Characteristic Symbol Rating Unit Collector to Emitter

1.236. mgd623n.pdf Size:227K _sanken-ele

D6
D6

IGBT MGD623N July, 2009 Features Package----TO-3P Low Saturation Voltage VCE(sat)=1.7V typ. High Speed tf=200ns typ. Low VF FRD Included VF=1.2V typ. Applications Current Resonance Inverter Switching Induction Heating Cooking Equivalent circuit C (2) G (1) E (3) Absolute maximum ratings (Ta=25C) Characteristic Symbol Rating Unit Collector to Emitter

1.237. mld685d.pdf Size:351K _sanken-ele

D6
D6

http://www.sanken-ele.co.jp SANKEN ELECTRIC MLD685D Feb. 2011 Features Package MT100 (TO3P) Low on-state resistance Built-in gate protection diode Applications Electric power steering High current switching Key Specifications V(BR)DSS=60V (ID=100?A) RDS(ON)=4.7m? Max. (VGS=10V,ID=42A) Internal Equivalent Circuit D(2) G(1) S(3) Absolute maximum ratings

1.238. bd646_bd648_bd650_bd652.pdf Size:452K _transys

D6
D6

1.239. 2sd600.pdf Size:164K _inchange_semiconductor

D6
D6

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD600 DESCRIPTION ·High Collector Current-IC= 1.0A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SB631 APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL

1.240. 2sd613.pdf Size:89K _inchange_semiconductor

D6
D6

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD613 DESCRIPTION · ·With TO-220C package ·Complement to type 2SB633 ·High breakdown voltage :VCEO=85V ·High current 6A APPLICATIONS ·Recommend for 25-35W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter

1.241. bd676.pdf Size:120K _inchange_semiconductor

D6
D6

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BD676 DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = -45 V ·DC Current Gain— : hFE = 750(Min) @ IC= -1.5 A ·Complement to Type BD675 APPLICATIONS ·Designed for use as output devices in complementary general-purpose amplifier applications. ABSOLUTE MAXIMUM RATIN

1.242. bd676a.pdf Size:74K _inchange_semiconductor

D6
D6

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BD676A DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = -45 V ·DC Current Gain— : hFE = 750(Min) @ IC= -2 A ·Complement to Type BD675A APPLICATIONS ·Designed for use as output devices in complementary general-purpose amplifier applications. ABSOLUTE MAXIMUM RAT

1.243. bd635.pdf Size:255K _inchange_semiconductor

D6
D6

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD635 DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 25mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Complement to Type BD636 APPLICATIONS ·Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector

1.244. bd634.pdf Size:229K _inchange_semiconductor

D6
D6

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD634 DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= -25mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min.) ·Complement to Type BD633 APPLICATIONS ·Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collect

1.245. 2sd689.pdf Size:131K _inchange_semiconductor

D6
D6

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD689 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 1A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1A ·Complement to Type 2SB679 APPLICATIONS ·Low frequency medium power ampli

1.246. 2sd687.pdf Size:117K _inchange_semiconductor

D6
D6

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD687 DESCRIPTION Ў¤ With TO-220C package Ў¤ Low collector saturation voltage Ў¤ DARLINGTON Ў¤ High DC current gain APPLICATIONS Ў¤ Switching applications Ў¤ Hammer drive,pulse motor drive Ў¤ Power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base DESCRIPTION

1.247. bd677a.pdf Size:121K _inchange_semiconductor

D6
D6

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BD677A DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 60V ·DC Current Gain— : hFE = 750(Min) @ IC= 2 A ·Complement to Type BD678A APPLICATIONS ·Designed for use as output devices in complementary general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(

1.248. bd645.pdf Size:138K _inchange_semiconductor

D6
D6

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BD645 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Low Saturation Voltage ·Complement to Type BD646 APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM

1.249. 2sd608.pdf Size:238K _inchange_semiconductor

D6
D6

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD608 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Complement to Type 2SB628 APPLICATIONS ·Designed for audio frequency power amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1

1.250. bd676_bd678_bd680.pdf Size:118K _inchange_semiconductor

D6
D6

Inchange Semiconductor Product Specification Silicon PNP Darligton Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type BD675/BD677/BD679 Ў¤ DARLINGTON Ў¤ High DC current gain APPLICATIONS Ў¤ For use as output devices in complementary general­purpose amplifier applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION BD

1.251. bd644.pdf Size:105K _inchange_semiconductor

D6
D6

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BD644 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Low Saturation Voltage ·Complement to Type BD643 APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIM

1.252. 2sd692.pdf Size:184K _inchange_semiconductor

D6
D6

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor 2SD692 DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 1000 (Min) @ IC =1 Adc ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 80V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATIN

1.253. bd675_bd677_bd679.pdf Size:118K _inchange_semiconductor

D6
D6

Inchange Semiconductor Product Specification Silicon NPN Darligton Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type BD676/678/680 Ў¤ DARLINGTON Ў¤ High DC current gain APPLICATIONS Ў¤ For use as output devices in complementary general­purpose amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base BD675/

1.254. 2sd641.pdf Size:117K _inchange_semiconductor

D6
D6

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD641 DESCRIPTION Ў¤ With TO-3 package Ў¤ High voltage ,high speed APPLICATIONS Ў¤ Converters Ў¤ Inverters Ў¤ Switching regulators Ў¤ Motor controls PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYM

1.255. 2sd683.pdf Size:231K _inchange_semiconductor

D6
D6

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD683 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·High DC Current Gain- : hFE= 500(Min.)@ IC= 5A APPLICATIONS ·High voltage and high power switching applications. ·Motor driver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE

1.256. bd675a_677a_679a_681.pdf Size:117K _inchange_semiconductor

D6
D6

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD675A/677A/679A/681 DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type BD676A/678A/680A/682 Ў¤ DARLINGTON APPLICATIONS Ў¤ For medium power linear and switching applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Ў¤ Absolute maximum ratings (Ta=25Ў

1.257. bd650.pdf Size:138K _inchange_semiconductor

D6
D6

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BD650 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Low Saturation Voltage ·Complement to Type BD649 APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXI

1.258. 2sd628.pdf Size:201K _inchange_semiconductor

D6
D6

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD628 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(sus)= 100V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 5A ·Low Collector Saturation Voltage- : VCE (sat)= 2.0V(Max.)@ IC= 5A ·Complement to Type 2SB638 APPLICATIONS ·Designed for low frequency power amplifi

1.259. 2sd634.pdf Size:234K _inchange_semiconductor

D6
D6

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD634 DESCRIPTION ·High DC Current Gain : hFE= 2000(Min.) @IC= 3.0A ·Low Saturation Voltage : VCE(sat)= 1.5V(Max.)@ IC= 3.0A ·Complement to Type 2SB674 APPLICATIONS ·High power switching applications. ·Hammer drive, pulse motor drive applications. ABSOLUTE MAXIMUM RATINGS(Ta=2

1.260. 2sd612_2sd612k.pdf Size:201K _inchange_semiconductor

D6
D6

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD612 2SD612K DESCRIPTION · ·With TO-126 package ·Complement to type 2SB632/632K ·High collector dissipation ·Wide area of safe operation APPLICATIONS ·25V/35V, 2A low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base

1.261. 2sd673.pdf Size:231K _inchange_semiconductor

D6
D6

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SD673 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High Power Dissipation- : PC= 60W(Max)@TC=25? ·Complement to Type 2SB653 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO

1.262. 2sd600_2sd600k.pdf Size:195K _inchange_semiconductor

D6
D6

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD600 2SD600K DESCRIPTION · ·With TO-126 package ·Complement to type 2SB631/631K ·High breakdown voltage VCEO100/120V ·High current 1A ·Low saturation voltage APPLICATIONS ·For low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting

1.263. 2sd684.pdf Size:314K _inchange_semiconductor

D6
D6

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD684 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min) ·High DC Current Gain- : hFE= 1500(Min.)@IC= 2A ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 4A APPLICATIONS ·Igniter applications. ·High voltage switching applications.

1.264. bd675.pdf Size:121K _inchange_semiconductor

D6
D6

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BD675 DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 45 V ·DC Current Gain— : hFE = 750(Min) @ IC= 1.5 A ·Complement to Type BD676 APPLICATIONS ·Designed for use as output devices in complementary general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS

1.265. bd636.pdf Size:255K _inchange_semiconductor

D6
D6

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD636 DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= -25mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) ·Complement to Type BD635 APPLICATIONS ·Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collect

1.266. 2sd676.pdf Size:230K _inchange_semiconductor

D6
D6

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SD676 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·High Power Dissipation- : PC= 125W(Max)@TC=25? ·Complement to Type 2SB656 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO

1.267. 2sd669_2sd669a.pdf Size:280K _inchange_semiconductor

D6
D6

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD669 2SD669A DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type 2SB649/649A Ў¤ High breakdown voltage VCEO:120/160V Ў¤ High current 1.5A Ў¤ Low saturation voltage,excellent hFE linearity APPLICATIONS Ў¤ For low-frequency power amplifier applications PINNING PIN 1 2 3 Emitter Collector;connec

1.268. 2sd686.pdf Size:117K _inchange_semiconductor

D6
D6

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD686 DESCRIPTION Ў¤ With TO-220C package Ў¤ Complement to type 2SB676 Ў¤ DARLINGTON Ў¤ High DC current gain APPLICATIONS Ў¤ Switching applications Ў¤ Hammer drive,pulse motor drive Ў¤ Power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base DESCRIPTION Ў¤

1.269. 3cd6d.pdf Size:127K _inchange_semiconductor

D6
D6

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 3CD6D DESCRIPTION ·With TO-3 package ·Low collector saturation voltage APPLICATIONS ·For power amplifier and low speed switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETE

1.270. 2sd627.pdf Size:147K _inchange_semiconductor

D6
D6

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD627 DESCRIPTION ·With TO-3 package ·High voltage,high speed APPLICATIONS ·For use in horizontal deflection output stages for color TV receivers PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARA

1.271. 2sd675.pdf Size:230K _inchange_semiconductor

D6
D6

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SD675 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·High Power Dissipation- : PC= 100W(Max)@TC=25? ·Complement to Type 2SB655 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO

1.272. 2sd665.pdf Size:120K _inchange_semiconductor

D6
D6

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD665 DESCRIPTION Ў¤ With TO-3 package Ў¤ Complement to type 2SB645 Ў¤ High power dissipation APPLICATIONS Ў¤ Power amplifier applications Ў¤ Power switching applications Ў¤ DC-DC converters PINNING(see Fig.2) PIN 1 2 3 Base Emitter DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCE

1.273. 2sd633_2sd635.pdf Size:86K _inchange_semiconductor

D6
D6

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD633 2SD635 DESCRIPTION · ·With TO-220C package ·Complement to type 2SB673/675 ·DARLINGTON ·High DC current gain ·Low saturation voltage APPLICATIONS ·High power switching ·Hammer drive,pulse motor drive PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter

1.274. bd647.pdf Size:138K _inchange_semiconductor

D6
D6

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BD647 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Low Saturation Voltage ·Complement to Type BD648 APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM

1.275. bd649.pdf Size:138K _inchange_semiconductor

D6
D6

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BD649 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Low Saturation Voltage ·Complement to Type BD650 APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMU

1.276. bd676a_678a_680a_682.pdf Size:118K _inchange_semiconductor

D6
D6

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type BD675A/677A/679A/681 Ў¤ DARLINGTON Ў¤ High DC current gain APPLICATIONS Ў¤ For medium power linear and switching applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION BD676A/678A/680A/682 Ў¤ Absolute ma

1.277. bd651.pdf Size:138K _inchange_semiconductor

D6
D6

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BD651 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Low Saturation Voltage ·Complement to Type BD652 APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMU

1.278. bd633.pdf Size:255K _inchange_semiconductor

D6
D6

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD633 DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 25mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min.) ·Complement to Type BD634 APPLICATIONS ·Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector

1.279. bd638.pdf Size:255K _inchange_semiconductor

D6
D6

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD638 DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= -25mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min.) ·Complement to Type BD637 APPLICATIONS ·Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collect

1.280. 2sd649.pdf Size:221K _inchange_semiconductor

D6
D6

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD649 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Reliability APPLICATIONS ·Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltag

1.281. 2sd640.pdf Size:231K _inchange_semiconductor

D6
D6

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD640 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V (Max.)@ IC= 5A APPLICATIONS ·High voltage switching applications. ·High power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER

1.282. bd648.pdf Size:138K _inchange_semiconductor

D6
D6

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BD648 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Low Saturation Voltage ·Complement to Type BD647 APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIM

1.283. bd643.pdf Size:119K _inchange_semiconductor

D6
D6

Inchange Semiconductor Product Specification Silicon NPN Dalington Power Transistors DESCRIPTION Ў¤ With TO-220C package Ў¤ Complement to type BD644 Ў¤ DARLINGTON APPLICATIONS Ў¤ For use in output stages in audio equipment ,general amplifier,and analogue switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BD643 Absolute maxim

1.284. bd652.pdf Size:138K _inchange_semiconductor

D6
D6

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BD652 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Low Saturation Voltage ·Complement to Type BD651 APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXI

1.285. bd646.pdf Size:138K _inchange_semiconductor

D6
D6

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BD646 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Low Saturation Voltage ·Complement to Type BD645 APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIM

1.286. bd675a.pdf Size:121K _inchange_semiconductor

D6
D6

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BD675A DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 45 V ·DC Current Gain— : hFE = 750(Min) @ IC= 2 A ·Complement to Type BD676A APPLICATIONS ·Designed for use as output devices in complementary general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS

1.287. bd637.pdf Size:255K _inchange_semiconductor

D6
D6

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD637 DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 25mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min.) ·Complement to Type BD638 APPLICATIONS ·Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector

1.288. bd677.pdf Size:121K _inchange_semiconductor

D6
D6

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BD677 DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 60V ·DC Current Gain— : hFE = 750(Min) @ IC= 1.5 A ·Complement to Type BD678 APPLICATIONS ·Designed for use as output devices in complementary general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(

1.289. 2sd602.pdf Size:453K _htsemi

D6
D6

2SD602 TRANSISTOR (NPN) SOT–23 FEATURES ? Low Collector to Emitter Saturation Voltage ? Mini Type Package 1. BASE MAXIMUM RATINGS (Ta=25? unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 25 V CEO V Emitter-Base Voltage 5 V EBO IC Collector Current 500 mA PC Collector Power Diss

1.290. umd6n.pdf Size:404K _htsemi

D6
D6

UMD6N DIGITAL TRANSISTOR (NPN+ PNP) SOT-363 FEATURES DTA143T(PNP) and DTC143T(NPN) transistors are built-in a package. Transistor elements are independent, eliminating interference. Mounting cost and area can be cut in half. 1 External circuit MARKING:D6 Absolute maximum ratings(Ta=25?) Parameter Symbol Limits Unit Collector-base voltage V(BR)CBO 50 V Collector-emitter

1.291. 2sd602a.pdf Size:429K _htsemi

D6
D6

2SD602A TRANSISTOR (NPN) SOT–23 FEATURES ? Low Collector to Emitter Saturation Voltage ? Mini Type Package 1. BASE MAXIMUM RATINGS (Ta=25? unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 50 V CEO V Emitter-Base Voltage 5 V EBO IC Collector Current 500 mA PC Collector Power Di

1.292. emd6.pdf Size:460K _htsemi

D6
D6

EMD6 DIGITAL TRANSISTOR (NPN+ PNP) FEATURES SOT-563 DTA143T(PNP) and DTC143T(NPN) transistors are built-in a package. 1 Transistor elements are independent, eliminating interference. Mounting cost and area can be cut in half. External circuit MARKING:D6 Absolute maximum ratings(Ta=25?) Parameter Symbol Limits Unit Collector-base voltage V(BR)CBO 50 V Collector-emitter volta

1.293. ceu6056_ced6056.pdf Size:410K _cet

D6
D6

CED6056/CEU6056 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 76A , RDS(ON) = 6.2m? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise

1.294. ceu6336_ced6336.pdf Size:390K _cet

D6
D6

CED6336/CEU6336 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 25A , RDS(ON) = 41m? @VGS = 10V. RDS(ON) = 55m? @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE M

1.295. ceu6060n_ced6060n.pdf Size:420K _cet

D6
D6

CED6060N/CEU6060N N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 34A, RDS(ON) = 25m? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise

1.296. ceu6186_ced6186.pdf Size:415K _cet

D6
D6

CED6186/CEU6186 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 28A, RDS(ON) = 25m? @VGS = 10V. RDS(ON) = 32m? @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATING

1.297. ceu630n_ced630n.pdf Size:392K _cet

D6
D6

CED630N/CEU630N N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V, 7.5A, RDS(ON) = 0.36? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwis

1.298. ced6601_ceu6601.pdf Size:428K _cet

D6
D6

CED6601/CEU6601 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -16A, RDS(ON) = 86m? @VGS = -10V. RDS(ON) = 125m? @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM R

1.299. ceu6426_ced6426.pdf Size:345K _cet

D6
D6

CED6426/CEU6426 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 16A , RDS(ON) = 66m? @VGS = 10V. RDS(ON) = 85m? @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATIN

1.300. ceu6086_ced6086.pdf Size:410K _cet

D6
D6

CED6086/CEU6086 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 50A, RDS(ON) = 8.7m? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise n

1.301. ced6861_ceu6861.pdf Size:440K _cet

D6
D6

CED6861/CEU6861 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -12A, RDS(ON) = 132m? @VGS = -10V. RDS(ON) = 195m? @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM

1.302. ceu655_ced655.pdf Size:413K _cet

D6
D6

CED655/CEU655 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 150V, 6.4A, RDS(ON) = 0.45? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unles

1.303. 2sd667-2sd667a_to-92l.pdf Size:215K _lge

D6
D6

2SD667/2SD667A TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 4.700 5.100 2 3 1 Features 7.800 Low frequency power amplifier 8.200 Complementary pair with 2SB647/A 0.600 0.800 MAXIMUM RATINGS (TA=25? unless otherwise noted) 0.350 Symbol Parameter Value Units 0.550 13.800 14.200 VCBO Collector- Base Voltage 120 V VCEO Collector-Emitter Voltage

1.304. 2sd667-2sd667a_to-92mod.pdf Size:257K _lge

D6
D6

2SD667/2SD667A TO-92MOD Transistor (NPN) TO-92MOD 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE Features Low frequency power amplifier 5.800 6.200 Complementary pair with 2SB647/A 8.400 MAXIMUM RATINGS (TA=25? unless otherwise noted) 8.800 0.900 1.100 Symbol Parameter Value Units 0.400 VCBO Collector- Base Voltage 120 V 0.600 VCEO Collector-Emitter Voltage 2SD667 80 13.

1.305. 2sd669-2sd669a_to-126.pdf Size:180K _lge

D6
D6

2SD669/2SD669A(NPN) TO-126 Transistor TO-126 1. EMITTER 2. COLLECTOR 3. BASE 3 2 1 Features 2.500 7.400 2.900 1.100 7.800 Low frequency power amplifier complementary pair 1.500 with 2SB649/A 3.900 3.000 4.100 MAXIMUM RATINGS (TA=25? unless otherwise noted) 3.200 10.600 0.000 0.300 Symbol Parameter Value Units11.000 VCBO Collector- Base Voltage 180 V 2.100

1.306. sd168_sd600_sd601_sd602_sd802_sd812.pdf Size:336K _gdr

D6
D6

1.307. msd601.pdf Size:425K _wietron

D6
D6

MSD601 NPN General Purpose Transistors 3 1 P b Lead(Pb)-Free 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Rating Symbol Value Unit Collector-Emitter Voltage VCEO 50 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 7.0 V IC Collector Current - Continuous 100 mA IC(P) Collector Current - Peak 200 mA Total Device Dissipation PD 0.2 mW TA=25°C Tj °C Junction Temperature +1

1.308. 2sd669.pdf Size:245K _wietron

D6
D6

2SD669/2SD669A NPN Epitaxial Planar Transistors 1. EMITTER 2. COLLECTOR P b Lead(Pb)-Free 3. BASE 1 2 3 TO-126C ABSOLUTE MAXIMUM RATINGS(TA=25?C) Rating Symbol 2SD669 2SD669A Unit VCBO 180 180 V Collector-Emitter Voltage VCEO 120 160 V Collector-Base Voltage VEBO Emitter-Base Voltage 5.0 5.0 V Collector Current IC 1.5 A PD 1.0 W Power Disspation Tj 150 ?C Junction Temper

1.309. wnmd6003.pdf Size:1830K _willsemi

D6
D6

WNMD6003 WNMD6003 Dual N-Channel, 60V, 0.30A, Power MOSFET Http//:www.sh-willsemi.com VDS (V) Rds(on) (Ω) 1.4@ VGS=10V 60 1.7@ VGS=4.5V ESD Rating:2000V HBM SOT-563 Descriptions The WNMD6003 is Dual N-Channel enhancem -ent MOS Field Effect Transistor. Uses advanced D1 G2 S2 trench technology and design to provide excellent 6 5 4 RDS (ON) with low gate charge. This d

1.310. hsd669at.pdf Size:89K _hsmc

D6
D6

Spec. No. : H200901 HI-SINCERITY Issued Date : 2009.02.20 Revised Date : MICROELECTRONICS CORP. Page No. : 1/4 HSD669AT NPN Epitaxial Planar Transistor Description Low frequency power amplifier complementary pair with HSB649A TO-126 Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures Storage Temperature ............................................................

1.311. hsd669a.pdf Size:43K _hsmc

D6
D6

Spec. No. : HE6630 HI-SINCERITY Issued Date : 1995.12.18 Revised Date : 2006.07.27 MICROELECTRONICS CORP. Page No. : 1/4 HSD669A NPN Epitaxial Planar Transistor Description Low frequency power amplifier complementary pair with HSB649A TO-126ML Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures Storage Temperature...............................................................

1.312. hsd667a.pdf Size:49K _hsmc

D6
D6

Spec. No. : HE6510 HI-SINCERITY Issued Date : 1996.07.15 Revised Date : 2004.08.16 MICROELECTRONICS CORP. Page No. : 1/5 HSD667A SILICON NPN EPITAXIAL Description Low Frequency Power Amplifier Complementary Pair With HSB647A. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature .....................................................................................

1.313. aod607.pdf Size:209K _aosemi

D6
D6

AOD607 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD607 uses advanced trench n-channel p-channel technology MOSFETs to provide VDS (V) = 30V -30V excellent RDS(ON) and low gate charge. ID = 12A (VGS=10V) -12A (VGS = -10V) The complementary MOSFETs may be RDS(ON) RDS(ON) used in H-bridge, Inverters and other < 25 mΩ (VGS=10V) < 37 m

1.314. aod609.pdf Size:269K _aosemi

D6
D6

AOD609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD609 uses advanced trench technology n-channel MOSFETs to provide excellent RDS(ON) and low gate VDS (V) = 40V, ID = 12A (VGS=10V) charge. The complementary MOSFETs may be used RDS(ON)< 30mΩ (VGS=10V) in H-bridge, Inverters and other applications. RDS(ON)< 40mΩ (VGS=4.5V) p-channel -R

1.315. aod6n50.pdf Size:489K _aosemi

D6
D6

AOD6N50 500V,5.3A N-Channel MOSFET General Description Product Summary The AOD6N50 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high VDS 600V@150℃ levels of performance and robustness in popular AC-DC ID (at VGS=10V) 5.3A applications.By providing low RDS(on), Ciss and Crss along RDS(ON) (at VGS=10V) < 1.4Ω with guaranteed avalanche ca

1.316. aod603a.pdf Size:392K _aosemi

D6
D6

AOD603A 60V Complementary MOSFET General Description Product Summary N-Channel P-Channel The AOD603A uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate VDS= 60V -60V charge. The complementary MOSFETs may be ID= 13A (VGS=10V) -13A (VGS=-10V) used in H-bridge, Inverters and other applications. RDS(ON) RDS(ON) < 60mΩ (VGS=10V) < 115mΩ (VGS=-10V)

1.317. bd679a.pdf Size:232K _cystek

D6
D6

Spec. No. : C652T3-M Issued Date : 2006.05.24 CYStech Electronics Corp. Revised Date : 2011.09.30 Page No. : 1/6 NPN Epitaxial Planar Transistor BD679A Description The BD679A is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: •High BVCEO •Low VCE(SAT) •High current gain •Monolithic construction

1.318. btd6055m3.pdf Size:236K _cystek

D6
D6

Spec. No. : C659M3 Issued Date : 2008.06.25 CYStech Electronics Corp. Revised Date : Page No. : 1/6 NPN Epitaxial Planar High Current (High Performance) Transistor BTD6055M3 Features • Low VCE(SAT) • Low RCE(SAT), RCE(SAT)=50 mΩ(typically) at IC=5A • Low operating collector voltage • Excellent current gain characteristics at very low VCE • Suitable for low drop

1.319. mted6n25j3.pdf Size:310K _cystek

D6
D6

Spec. No. : C894J3 Issued Date : 2013.03.11 CYStech Electronics Corp. Revised Date : 2013.12.30 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 250V MTED6N25J3 ID 8A 435mΩ VGS=10V, ID=5A RDSON(TYP) 410mΩ VGS=6V, ID=3A Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating and halogen-free package Equivalent Circuit Out

1.320. mted6n25kj3.pdf Size:301K _cystek

D6
D6

Spec. No. : C936J3 Issued Date : 2013.12.09 CYStech Electronics Corp. Revised Date : Page No. : 1/9 lN-Channel Enhancement Mode Power MOSFET BVDSS 250V MTED6N25KJ3 ID @ VGS=10V 8A 422mΩ VGS=10V, ID=5A RDSON(TYP) 399mΩ VGS=6V, ID=3A Features • ESD protected • Low Gate Charge • Fast Switching Characteristic • Simple Drive Requirement • Pb-free lead

1.321. btd6055j3.pdf Size:235K _cystek

D6
D6

Spec. No. : C659J3 Issued Date : 2008.06.25 CYStech Electronics Corp. Revised Date : Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BTD6055J3 Features • Low VCE(SAT) • Low RCE(SAT), RCE(SAT)=50 mΩ(typically) at IC=5A • Low operating collector voltage • Excellent current gain characteristics at very low VCE • Suitable for low dropout voltage applicati

1.322. stu668s_std668s.pdf Size:124K _samhop

D6
D6

STU668S Green Product STD668S SamHop Microelectronics Corp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Max Rugged and reliable. 9.0 @ VGS=10V TO-252 and TO-251 Package. 60V 50A 13.2 @ VGS=4.5V G S STU SERIES STD SERIES TO-252AA(D-PAK) TO-251(I-PAK) ABSOL

1.323. stu6025nl_std6025nl.pdf Size:110K _samhop

D6
D6

Green Product STU/D6025NL SamHop Microelectronics Corp. Feb 25,2006 Ver1.2 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY FEATURES Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) ( m Ω ) Typ Rugged and reliable. 5.5 @ VGS = 10V 30V 60A TO-252 and TO-251 Package. 8 @ VGS = 4.5V D D D G G S S G STU SERIES STD SERIES TO-252AA(D-P

1.324. stu628s_std628s.pdf Size:121K _samhop

D6
D6

STU628S Green Product STD628S SamHop Microelectronics Corp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Max Rugged and reliable. 12.5 @ VGS=10V TO-252 and TO-251 Package. 60V 40A 16 @ VGS=4.5V G G S S STU SERIES STD SERIES TO-252AA(D-PAK) TO-251(I-PAK)

1.325. stu609s_std609s.pdf Size:98K _samhop

D6
D6

Gr P Pr P P STU/D609S a S mHop Microelectronics C orp. Ver 1.1 P-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 53 @ VGS=-10V TO-252 and TO-251 Package. -60V -20A 80 @ VGS=-4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO -

1.326. stu610s_std610s.pdf Size:120K _samhop

D6
D6

Green Product STU/D610S a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (mΩ) Max VDSS ID Rugged and reliable. 9.5A 240 @ VGS=10V 60V TO-252 and TO-251 Package. G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK (TA

1.327. stu650s_std650s.pdf Size:121K _samhop

D6
D6

Green Product STU/D650S a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (mΩ) Max VDSS ID Rugged and reliable. 75 @ VGS=10V TO-252 and TO-251 Package. 16A 65V 97 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 25

1.328. stu666s_std666s.pdf Size:124K _samhop

D6
D6

STU666S Green Product STD666S SamHop Microelectronics Corp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Max Rugged and reliable. 101 @ VGS=10V TO-252 and TO-251 Package. 60V 6A 126 @ VGS=4.5V G S STU SERIES STD SERIES TO-252AA(D-PAK) TO-251(I-PAK) ABSOL

1.329. stu608s_std608s.pdf Size:96K _samhop

D6
D6

STU/D608S SamHop Microelectronics Corp. Feb. 06 2007 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) ( m Ω ) Max Rugged and reliable. 55 @ VGS = 10V TO-252 and TO-251 Package. 60V 16A 65@VGS = 4.5V ESD Protected. D D G S G STU SERIES STD SERIES TO-252AA(D-PAK) TO-251(l-PAK) S ABSOLU

1.330. stu624s_std624s.pdf Size:110K _samhop

D6
D6

Gre r r P Pr Pr Pro STU/D624S SamHop Microelectronics Corp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 17.5 @VGS=10V TO-252 and TO-251 Package. 35A 60V 30 @VGS=4.5V G G S S STU SERIES STD SERIES TO-252AA(D-PAK) TO-251(I-PAK

1.331. stu664s_std664s.pdf Size:117K _samhop

D6
D6

STU664S Green Product STD664S SamHop Microelectronics Corp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (mΩ) Max VDSS ID Rugged and reliable. 60V 30A 20 @VGS=10V TO-252 and TO-251 Package. G S STU SERIES STD SERIES TO-252AA(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS

1.332. stu6025nl2_std6025nl2.pdf Size:122K _samhop

D6
D6

Green Product STU/D6025NL2 a S mHop Microelectronics C orp. Ver 2.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Max Rugged and reliable. 6.5 @ VGS=10V Suface Mount Package. 30V 60A 9.5 @ VGS=4.5V G G S S STU SERIES STD SERIES TO-252AA(D-PAK) TO-251(I-PAK) (TA=25

1.333. stu660_std660.pdf Size:120K _samhop

D6
D6

Green Product STU/D660 SamHop Microelectronics Corp. Ver 2.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (mΩ) Max VDSS ID Rugged and reliable. 620 @VGS=10V TO-252 and TO-251 Package. 80V 3A 800 @VGS=4.5V ESD Protected. D G G G S S STU SERIES STD SERIES TO-252AA(D-PAK) TO-

1.334. stu618s_std618s.pdf Size:122K _samhop

D6
D6

Green Product STU/D618S a S mHop Microelectronics C orp. Ver 1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (mΩ) Max VDSS ID Rugged and reliable. 56 @ VGS=10V TO-252 and TO-251 Package. 21A 60V 70 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 25

1.335. stu616s_std616s.pdf Size:127K _samhop

D6
D6

Green Product STU/D616S a S mHop Microelectronics C orp. Ver1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (mΩ) Typ VDSS ID Rugged and reliable. 64 @ VGS=10V Suface Mount Package. 60V 16A 81 @ VGS=4.5V ESD Protected. D D G G S S STU SERIES STD SERIES TO-252AA(D-PAK) TO-25

1.336. stu602s_std602s.pdf Size:120K _samhop

D6
D6

Green Product STU/D602S SamHop Microelectronics Corp. Aug 26,2006 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY FEATURES Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) ( m Ω ) Max Rugged and reliable. 30 @ VGS = 10V 22A 60V TO-252 and TO-251 Package. 38@VGS = 4.5V D D D G G S S G STU SERIES STD SERIES TO-252AA(D-PAK) TO-251(l-PAK) S

1.337. stu670s_std670s.pdf Size:124K _samhop

D6
D6

STU670S Green Product STD670S SamHop Microelectronics Corp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Max Rugged and reliable. 15 @ VGS=10V TO-252 and TO-251 Package. 60V 36A 23 @ VGS=4.5V G S STU SERIES STD SERIES TO-252AA(D-PAK) TO-251(I-PAK) ABSOLUTE

1.338. stu622s_std622s.pdf Size:108K _samhop

D6
D6

Gree r r P Pr Pr Pro STU/D622S a S mHop Microelectronics C orp. Ver 1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 74 @ VGS=10V TO-252 and TO-251 Package. 17A 60V 96 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK (

1.339. pd628ba.pdf Size:798K _unikc

D6
D6

PD628BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 14mΩ @VGS = 10V 30V 27A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V TC= 25 ° C 27 ID Continuous Drain Current TC= 100 ° C 17 A IDM 100 Pulsed Drain Current1

1.340. pd636ba.pdf Size:474K _unikc

D6
D6

PD636BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9mΩ @VGS = 10V 30V 48A 100% RG Test 100% UIL Test TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V TC= 25 ° C 48 ID Continuous Drain Current2 TC= 100 ° C 30.5 A I

1.341. pd632ba.pdf Size:441K _unikc

D6
D6

PD632BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 3.7mΩ @VGS = 10V 30V 105A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V TC= 25 ° C 105 ID Continuous Drain Current2 TC= 100 ° C 66 A IDM 200 Pulsed Drain Curre

1.342. pd696ba.pdf Size:759K _unikc

D6
D6

PD696BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 6mΩ @VGS = 10V 30V 66A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V TC= 25 ° C 66 ID Continuous Drain Current2 TC= 100 ° C 41 A IDM 150 Pulsed Drain Current1

1.343. pd648ba.pdf Size:438K _unikc

D6
D6

PD648BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 3.9mΩ @VGS = 10V 30V 94A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V TC = 25 ° C 94 ID Continuous Drain Current2 TC = 100 ° C 59 A IDM 170 Pulsed Drain Curre

1.344. pd6a8ba.pdf Size:513K _unikc

D6
D6

PD6A8BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 6.2mΩ @VGS = 10V 40V 75A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 TC = 25 ° C 75 ID Continuous Drain Current2 TC = 100 ° C 47 A IDM 120 Pulsed Drain Curren

1.345. pd612ba.pdf Size:469K _unikc

D6
D6

PD612BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9mΩ @VGS = 10V 30V 47A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 TC= 25 ° C 47 ID Continuous Drain Current2 TC= 100 ° C 30 A IDM 120 Pulsed Drain Current1

1.346. ssfd6035.pdf Size:322K _silikron

D6
D6

SSFD6035 D DESCRIPTION The SSFD6035 uses advanced trench technology to provide excellent RDS(ON) G and low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES ● VDS =- 60V,ID =-26A RDS(ON) < 40mΩ @ VGS=-10V RDS(ON) < 55mΩ @ VGS=-4.5V ● High Power and current handing capability ● Lead fr

1.347. ssfd6046.pdf Size:1083K _silikron

D6
D6

SSFD6046 Feathers: ID =12A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=50mΩ(max.) Fully characterized avalanche voltage and current Description: The SSFD6046 is a new generation of middle voltage N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical SSFD6046 param

1.348. brd6n70.pdf Size:896K _blue-rocket-elect

D6
D6

BRD6N70(BRCS6N70D) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-252 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-252 Plastic Package. 特征 / Features 开关速度快,低导通电阻,低栅极电荷,低反向传输电容。 Fast switching, low on resistance, low gate charge, low reverse transfer capacitances. 用途 / Applications 用于小型

1.349. brd6n60.pdf Size:751K _blue-rocket-elect

D6
D6

BRD6N60(BRCS6N60D) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-252 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-252 Plastic Package. 特征 / Features DS 之间导通电阻小、低的门槛电压、反向传输电容小、开关速度快、改良了 dv/dt 能力。 Low RDS(ON)、Low gate charge、Low Crss 、Fast switching、Improved dv/dt capability.

1.350. 2sd602.pdf Size:713K _blue-rocket-elect

D6
D6

2SD602(BR3DG602M) 2SD602A(BR3DG602AM) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features 与 2SB710(BR3CG710M),2SB710A(BR3CG710AM)互补。 Complementary pair with 2SB710(BR3CG710M),2SB710A(BR3CG710AM) 。 用途 / Applications 用于普通功率放大。 General

1.351. 2sd655.pdf Size:589K _blue-rocket-elect

D6
D6

2SD655(BR3DG655K) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package. 特征 / Features 频率低。 Low frequency. 用途 / Applications 用于低频放大。 Low frequency power amplifier. 内部等效电路 / Equivalent Circuit 引脚排列 / Pinning 1 2 3 PIN1:Base PIN 2

1.352. 2sd669a.pdf Size:473K _blue-rocket-elect

D6
D6

2SD669(A)(BR3DA669(A)QF) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-126F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-126F Plastic Package. 特征 / Features 与 2SB649(BR3CA649QF)/2SB649A(BR3CA649AQF)互补。 Complementary pair with 2SB649(BR3CA649QF)/2SB649A(BR3CA649AQF). 用途 / Applications 用于低频功率放大。 Low frequency power

1.353. 2sd600k.pdf Size:405K _blue-rocket-elect

D6
D6

2SD600K(BR3DA600KQF) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-126F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-126F Plastic Package. 特征 / Features V 高,电流大,饱和压降低,有极好的放大特性,与 2SB631K(BR3CA631KQF)互补。 CEO High VCEO ,high current, low VCE(sat) and good linearity of hFE; complementary pair with 2SB63

1.354. 2sd667a.pdf Size:557K _blue-rocket-elect

D6
D6

2SD667(A)(BR3DG667(A)L) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-92LM 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92LM Plastic Package. 特征 / Features 与 2SB647(BR3CG647L)/2SB647A(BR3CG647AL)互补。 Complementary pair with 2SB647(BR3CG647L)/2SB647A(BR3CG647AL). 用途 / Applications 用于低频功率放大。 Low frequency power ampli

1.355. 2sd601a.pdf Size:854K _blue-rocket-elect

D6
D6

2SD601A(BR3DG601AM) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features 与 2SB709A(BR3CG709AM)互补。 Complementary pair with 2SB709A(BR3CG709AM). 用途 / Applications 用于普通功率放大。 General power amplifier applications 内部等效电路 / Equiva

1.356. brd630.pdf Size:1079K _blue-rocket-elect

D6
D6

BRD630(BRCS630D) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-252 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-252 Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for high e

1.357. 3dd6012_a6.pdf Size:149K _crhj

D6
D6

硅三重扩散 NPN 双极型晶体管 R ○ 3DD6012 A6 产品概述 特征参数 产品特点 ● 开关损耗低 3DD6012 A6 是硅 NPN 符 号 额定值 单 位 ● 反向漏电流小 型功率开关晶体管, VCEO 530 V 该产品 ● 高温特性好 IC 1.5 A 采用平面工艺, 分压环终端 ● 反向击穿电压高 Ptot W (TC=25℃) 50 结构

1.358. 3dd6012_a1.pdf Size:194K _crhj

D6
D6

硅三重扩散NPN双极型晶体管 R ○ 3DD6012 A1 产品概述 特征参数 产品特点 ● 开关损耗低 3DD6012 A1 是硅 NPN 符 号 额定值 单 位 ● 反向漏电流小 型功率开关晶体管, VCEO 530 V 该产品 ● 高温特性好 IC 1.5 A 采用平面工艺, 分压环终端 ● 反向击穿电压高 Ptot (Ta=25℃) 0.8 W 结构和

1.359. d667.pdf Size:113K _jdsemi

D6
D6

R D667 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. ◆Si NPN ◆RoHS COMPLIANT 1. 1. 1.APPLICATION 1. Charger、Emergency lamp and Electric toy control circuit 2. 2. 2.FEATURES 2.

1.360. brd630.pdf Size:604K _first_silicon

D6
D6

SEMICONDUCTOR BRD630 TECHNICAL DATA N-Channel Power MOSFET A I C J GENERAL DESCRIPTION DIM MILLIMETERS This advanced high voltage MOSFET is designed to stand high A 6 50 ± 0 2 B 5 60 ± 0 2 C 5 20 ± 0 2 energy in the avalanche mode and switch efficiently. D 1 50 ± 0 2 E 2 70 ± 0 2 F 2 30 ± 0 1 This new high energy device also offers a drain H H 1 00 MAX I 2 30 ±

1.361. pumd6.pdf Size:963K _kexin

D6
D6

SMD Type Transistors NPN/PNP Resistor-Equipped Transistors PUMD6 SOT323-6 (SOT363) ■ Features 4 ● Built-in bias resistors ● Simplified circuit design 5 ● Reduction of component count 3 ● Reduced pick and place costs. 1.Emitter NPN 2 6 2.Base NPN 3.Collector PNP 4.Emitter PNP 1 PNP 3 4 5.Base PNP Top view 6.Collector NPN R1 R1 5 2 6 1 NPN ■ Absolute

1.362. 2sd602a.pdf Size:352K _kexin

D6
D6

SMD Type Transistors NPN Transistors 2SD602A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Low Collector to Emitter Saturation Voltage ● Mini Type Package 1 2 ● Complimentary to 2SB710A +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Volt

1.363. 2sd601a.pdf Size:353K _kexin

D6
D6

SMD Type Transistors NPN Transistors 2SD601A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 ■ Features 3 ● High hFE ● Low VCE(sat) ● For general amplification 1 2 +0.1 0.95-0.1 0.1+0.05 -0.01 ● Complimentary to 2SB709A +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO

1.364. ntd6n15.pdf Size:1627K _kexin

D6
D6

SMD Type MOSFET N-Channel MOSFET NTD6N15 TO-252 Unit: mm 6.50+0.15 -0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ■ Features 4 ● VDS (V) = 150V ● ID = 6 A (VGS = 10V) 0.127 ● RDS(ON) < 300mΩ (VGS = 10V) +0.1 0.80-0.1 max ● Silicon Gate for Fast Switching Speeds ● Low Drive Requirement 1 Gate 2.3 0.60+ 0.1 - 0.1 2 Drain +0.15 4.60 -0.15 D 3 S

See also transistors datasheet: D45VM5 , D45VM6 , D45VM7 , D45VM8 , D45VM9 , D5-28B , D56W1 , D56W2 , 2SC2625 , D60ST1520 , D60T1520 , D60T2575 , D60T2590 , D60T3075 , D60T3090 , D60T3575 , D60T3590 .

Search Terms:

 D6 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


D6
  D6
  D6
  D6
 
D6
  D6
  D6
  D6
 

social 

LIST


 

Enter a full or partial SMD code with a minimum of 2 letters or numbers