2N3490 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N3490

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 117

Maximum collector-base voltage |Ucb|, V: 80

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 10

Maximum collector current |Ic max|, A: 7

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 10

Collector capacitance (Cc), pF: 550

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of 2N3490 transistor: TO61

2N3490 Equivalent Transistors - Cross-Reference Search

2N3490 PDF document for downloads:

5.1. 2n3498_2n3499_2n3450_2n3451.pdf Size:69K _microsemi

TECHNICAL DATA NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/366 Devices Qualified Level JAN 2N3498 2N3499 2N3500 2N3501 JANTX 2N3498L 2N3499L 2N3500L 2N3501L JANTXV JANS MAXIMUM RATINGS 2N3498* 2N3500* Ratings Symbol 2N3499* 2N3501* Unit Collector-Emitter Voltage 100 150 Vdc VCEO Collector-Base Voltage 100 150 Vdc VCBO Emitter-Base Voltage 6.0 6.0 Vdc VEBO TO-5* Collector Current 500 300 mAdc IC 2N3498L, 2N3499L Total Power Dissipation @ T = 250C (1) 1.0 W A PT 2N3500L, 2N3501L @ T = 250C (2) 5.0 W C 0 Operating & Storage Junction Temp. Range -55 to +200 C TJ, Tstg THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit Thermal Resistance: Junction-to-Case 35 R?JC 0 C/W TO-39* (TO-205AD) Junction-to-Ambient 175 R?JA 2N3498, 2N3499 *Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices 2N3500, 2N3501 1) Derate linearly 5.71 W/0C for T > 250C A 2) D

5.2. 2n3497.pdf Size:47K _semicoa

Data Sheet No. 2N3498 Generic Part Number: Type 2N3498 2N3498 Geometry 5620 Polarity NPN REF: MIL-PRF-19500/366 Qual Level: JAN - JANTXV Features: • General-purpose silicon transistor for switching and amplifier appli- cations. • Housed in TO-39 case. • Also available in chip form using the 5620 chip geometry. • The Min and Max limits shown are per MIL-PRF-19500/366 which TO-39 Semicoa meets in all cases. Maximum Ratings TC = 25oC unless otherwise specified Rating Symbol Rating Unit Collector-Emitter voltage VCEO 100 V Collector-Base Voltage VCBO 100 V Emitter-Base voltage VEBO 6.0 V Collector Current, Continuous IC 500 mA Power Dissipation, TA = 25oC 5.0 mW PD Derate above 25oC 28.8 mW/oC o C Operating Junction Temperature TJ -65 to +200 o C Storage Temperature TSTG -65 to +200 Data Sheet No. 2N3498 Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Symbol Min Max Unit Collector-Base Breakdown Voltage V(BR)CBO

See also transistors datasheet: 2N3486 , 2N3486A , 2N3486CSM , 2N3487 , 2N3488 , 2N3489 , 2N348A , 2N349 , 2N60 , 2N3491 , 2N3492 , 2N3493 , 2N3494 , 2N3494S , 2N3495 , 2N3495S , 2N3496 .

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