DT52-650
Transistor Datasheet. Parameters and Characteristics. Type Designator: DT52-650
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 1700
Maximum collector-base voltage |Ucb|, V: 650
Maximum collector-emitter voltage |Uce|, V: 500
Maximum emitter-base voltage |Ueb|, V: 0
Maximum collector current |Ic max|, A: 200
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz:
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 8
Noise Figure, dB: - Package of DT52-650
transistor: SPECIAL
DT52-650
Equivalent Transistors - Cross-Reference Search DT52-650
PDF document for downloads: PDF unavailable! See also transistors datasheet: DT48-950
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. Keywords| DT52-650
Datasheet | DT52-650
Datenblatt | DT52-650
RoHS | DT52-650
Distributor | | DT52-650
Application Notes | DT52-650
Component | DT52-650
Circuit | DT52-650
Schematic | | DT52-650
Equivalent | DT52-650
Cross Reference | DT52-650
Data Sheet | DT52-650
Fiche Technique |
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