DTA114GEA Datasheet & Equivalent - DTA114GEA Transistor DataSheet PDF. Parameters and Characteristics. Electronic Component Catalog

-100mA / -50V Digital transistors (with built-in resistor) DTA114GUA / DTA114GKA ? Applications ? Dimensions (Unit : mm) Inverter, Interface, Driver 2.0 0.9 DTA114GUA 0.3 0.2 0.7 (3) ? Features 1)The built-in bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and (2) (1) parasitic effects are almost completely eliminated. 2)Only the on / off conditions need to be set for operation, 0.65 0.65 (1) Emitter 0.15 making the device design easy. 1.3 (2) Base ROHM : UMT3 (3) Collector 3)Higher mounting densities can be achieved. EIAJ : SC-70 Each lead has same dimensions Abbreviated symbol : K14 ? Structure DTA114GKA PNP epitaxial planar silicon transistor 2.9 1.1 (Resistor built-in type) 0.4 0.8 (3) ? Packaging specifications Package UMT3 SMT3 Packaging type Taping Taping (2) (1) Code T106 T146 0.95 0.95 0.15 (1) Emitter Part No. Basic ordering unit (pieces) 3000 3000 1.9 (2) Bas

2.2. dta114ge-gua-gka-gsa_k14_sot416_323_346.pdf Size:45K _rohm

DTA114GE / DTA114GUA / DTA114GKA / DTA114GSA Transistors Transistors DTC114GUA / DTC114GKA / DTC114GSA

4.1. pdta114ee_2.pdf Size:57K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA114EE PNP resistor-equipped transistor Preliminary specification 1998 Jul 23 Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114EE FEATURES � Built-in bias resistors R1 and R2 (typ. 10 k? each) � Simplification of circuit design handbook, halfpage 3 3 � Reduces number of components R1 1 and board space. R2 2 12 APPLICATIONS Top view MAM345 � Especially suitable for space reduction in interface and driver circuits � Inverter circuit configurations without use of external resistors. Fig.1 Simplified outline (SC-75) and symbol. DESCRIPTION MARKING PNP resistor-equipped transistor in an SC-75 plastic package. TYPE MARKING NPN complement: PDTC114EE. NUMBER CODE 1 3 PDTA114EE 03 PINNING 2 MGA893 - 1 PIN DESCRIPTION 1 base/input Fig.2 Equivalent inverter 2 emitter/ground (+) symbol. 3 collec

4.2. pdta114es_2.pdf Size:58K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PDTA114ES PNP resistor-equipped transistor 1998 May 18 Product specification Supersedes data of 1997 Jul 02 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA114ES FEATURES � Built-in bias resistors R1 and R2 (typ. 10 k? each) � Simplification of circuit design handbook, halfpage 2 � Reduces number of components R1 1 1 and board space. 2 R2 3 3 APPLICATIONS � Especially suitable for space MAM338 reduction in interface and driver circuit applications � Inverter circuit configurations Fig.1 Simplified outline (TO-92; SOT54) and symbol. without use of external resistors. DESCRIPTION PNP resistor-equipped transistor in a TO-92; SOT54 plastic package. NPN complement: PDTC114ES. 1 2 3 PINNING MGL136 PIN DESCRIPTION 1 base/input Fig.2 Equivalent inverter 2 collector/output symbol. 3 emitter/ground (+) QUICK REFERENCE

4.3. pdta114eef_2.pdf Size:54K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA114EEF PNP resistor-equipped transistor 1999 May 21 Preliminary specification Supersedes data of 1998 Nov 11 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114EEF FEATURES PINNING � Power dissipation comparable to SOT23 PIN DESCRIPTION � Built-in bias resistors R1 and R2 (typ. 10 k? each) 1 base/input � Simplification of circuit design 2 emitter/ground (+) � Reduces number of components and board space. 3 collector/output APPLICATIONS 3 handbook, halfpage � Especially suitable for space reduction in interface and 3 R1 driver circuits 1 � Inverter circuit configurations without use of external R2 resistors. 2 12 Top view MAM413 DESCRIPTION Fig.1 Simplified outline (SC-89; SOT490) and symbol. PNP resistor-equipped transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. NPN complement: PDTC114EEF. MARKING 1 3 TYPE NUMBER MARKING CODE PDTA114

4.4. pdta114eu_6.pdf Size:58K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTA114EU PNP resistor-equipped transistor 1999 Apr 13 Product specification Supersedes data of 1998 May 18 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA114EU FEATURES � Built-in bias resistors R1 and R2 (typ. 10 k? each) 3 handbook, 4 columns � Simplification of circuit design 3 R1 � Reduces number of components 1 and board space. R2 2 APPLICATIONS 1 2 � Especially suitable for space Top view MAM135 reduction in interface and driver circuits � Inverter circuit configurations Fig.1 Simplified outline (SOT323) and symbol. without use of external resistors. DESCRIPTION MARKING PNP resistor-equipped transistor in a MARKING SOT323 plastic package. TYPE NUMBER CODE(1) NPN complement: PDTC114EU. 1 3 PDTA114EU ?03 2 PINNING Note MGA893 - 1 1. ? = - : Made in Hong Kong. PIN DESCRIPTION ? = t : Made in Malaysia. 1 base/input Fig.2 Equivalent inverter

4.5. pdta114tk_3.pdf Size:53K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 PDTA114TK PNP resistor-equipped transistor 1998 May 15 Product specification Supersedes data of 1997 Sep 05 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA114TK FEATURES � Built-in bias resistor R1 (typ. 10 k?) � Simplification of circuit design 3 handbook, halfpage � Reduces number of components and board space. 3 R1 1 APPLICATIONS 2 � Especially suitable for space reduction in interface and driver 1 2 circuits Top view MAM289 � Inverter circuit configurations without use of external resistor. Fig.1 Simplified outline (SC-59) and symbol. DESCRIPTION PNP resistor-equipped transistor in a MARKING SC-59 plastic package. NPN complement: PDTC114TK. TYPE MARKING 1 3 NUMBER CODE PINNING PDTA114TK 23 2 MGA893 - 1 PIN DESCRIPTION 1 base/input Fig.2 Equivalent inverter 2 emitter/ground (+) symbol. 3 collector/output

4.6. pdta114ts_2.pdf Size:53K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PDTA114TS PNP resistor-equipped transistor 1998 May 15 Product specification Supersedes data of 1997 Jul 14 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA114TS FEATURES � Built-in bias resistor R1 (typ. 10 k?) � Simplification of circuit design � Reduces number of components handbook, halfpage 2 and board space. 1 R1 2 1 3 APPLICATIONS 3 MAM352 � Especially suitable for space reduction in interface and driver circuits � Inverter circuit configurations without use of an external resistor. Fig.1 Simplified outline (TO-92; SOT54) and symbol. DESCRIPTION PNP resistor-equipped transistor in a TO-92; SOT54 plastic package. NPN complement: PDTC114TS. 1 2 PINNING 3 MGL136 PIN DESCRIPTION 1 base/input Fig.2 Equivalent inverter 2 collector/output symbol. 3 emitter/ground (+) QUICK REFERENCE DATA SYMBOL PARAMETER COND

4.7. pdta114et_5.pdf Size:56K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTA114ET PNP resistor-equipped transistor 1999 Apr 13 Product specification Supersedes data of 1998 May 15 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA114ET FEATURES � Built-in bias resistors R1 and R2 (typ. 10 k? each) 3 � Simplification of circuit design handbook, 4 columns 3 � Reduces number of components R1 and board space. 1 R2 APPLICATIONS 2 � Especially suitable for space 1 2 reduction in interface and driver Top view MAM100 circuits � Inverter circuit configurations without use of external resistors. Fig.1 Simplified outline (SOT23) and symbol. DESCRIPTION PNP resistor-equipped transistor in a MARKING SOT23 plastic package. NPN complement: PDTC114ET. TYPE MARKING 1 3 NUMBER CODE(1) PINNING PDTA114ET ?03 2 MGA893 - 1 PIN DESCRIPTION Note 1 base/input 1. ? = p : Made in Hong Kong. Fig.2 Equivalent inverter ? = t : Made in Malaysia. 2 em

4.8. dta114yerev1.pdf Size:139K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by DTA114YE/D DTA114YE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with 3 Monolithic Bias Resistor Network 2 The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic 1 bias network consisting of two resistors; a series base resistor and a base�emitter resistor. These digital transistors are designed to replace a single device and its CASE 463�01, STYLE 1 external resistor bias network. The BRT eliminates these individual components by SOT�416/SC�90 integrating them into a single device. The DTA114YE is housed in the SOT�416/SC�90 package which is ideal for low�power surface mount applications where board space is at a premium. � Simplifies Circuit Design OUT (3) R1 � Reduces Board Space IN (1) � Reduces Component Count R2 � Available in 8 mm, 7 inch/3000 Unit Tape and Reel. GND (2) R1 = 10 k? R2 = 47 k? MAXIMUM RATINGS (TA = 25�C un

4.9. pdta114ek_2.pdf Size:57K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D114 PDTA114EK PNP resistor-equipped transistor 1998 May 19 Product specification Supersedes data of 1997 Jul 04 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA114EK FEATURES � Built-in bias resistors R1 and R2 (typ. 10 k? each) 3 � Simplification of circuit design 3 � Reduces number of components R1 and board space. 1 R2 APPLICATIONS 2 � Especially suitable for space 1 2 reduction in interface and driver Top view MAM262 circuits � Inverter circuit configurations without use of external resistors. Fig.1 Simplified outline (SC-59) and symbol. DESCRIPTION PNP resistor-equipped transistor in MARKING an SC-59 plastic package. NPN complement: PDTC114EK. TYPE MARKING 1 3 NUMBER CODE PINNING PDTA114EK 03 2 MGA893 - 1 PIN DESCRIPTION 1 base/input Fig.2 Equivalent inverter 2 emitter/ground (+) symbol. 3 collector/o

4.10. dta114ye _59 _ sot416.pdf Size:91K _motorola

4.11. pdta114te_2.pdf Size:52K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA114TE PNP resistor-equipped transistor Preliminary specification 1998 Jul 23 Supersedes data of 1997 Jul 14 File under Discrete Semiconductors, SC04 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114TE FEATURES � Built-in bias resistor R1 (typ. 10 k?) � Simplification of circuit design � Reduces number of components handbook, 4 columns 3 and board space. 3 R1 1 APPLICATIONS 2 12 � Especially suitable for space Top view MAM359 reduction in interface and driver circuit applications � Inverter circuit configurations without use of an external resistor. Fig.1 Simplified outline (SC-75) and symbol. DESCRIPTION PNP resistor-equipped transistor in MARKING an SC-75 plastic package. NPN complement: PDTC114TE. TYPE MARKING 1 3 NUMBER CODE PINNING PDTA114TE 11 2 MGA893 - 1 PIN DESCRIPTION 1 base/input Fig.2 Equivalent inverter 2 emitter/ground (+) symbol. 3 collector/o

4.12. pdta114tt_3.pdf Size:51K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA114TT PNP resistor-equipped transistor 1999 Apr 13 Objective specification Supersedes data of 1998 May 18 Philips Semiconductors Objective specification PNP resistor-equipped transistor PDTA114TT FEATURES � Built-in bias resistor R1 (typ. 10 k?) � Simplification of circuit design 3 handbook, 4 columns � Reduces number of components 3 and board space. R1 1 APPLICATIONS 2 � Especially suitable for space 1 2 reduction in interface and driver Top view MAM286 circuits � Inverter circuit configurations without use of an external resistor. Fig.1 Simplified outline (SOT23) and symbol. DESCRIPTION PNP resistor-equipped transistor in a MARKING SOT23 plastic package. NPN complement: PDTC114TT. TYPE MARKING 1 3 NUMBER CODE(1) PINNING PDTA114TT ?11 2 MGA893 - 1 Note PIN DESCRIPTION 1. ? = p : Made in Hong Kong. 1 base/input Fig.2 Equivalent inverter ? = t : Made in Malaysia. 2 emitter/groun

4.13. pdta114tu_3.pdf Size:54K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTA114TU PNP resistor-equipped transistor 1999 Apr 13 Product specification Supersedes data of 1998 May 15 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA114TU FEATURES � Built-in bias resistor R1(typ. 10 k?) � Simplification of circuit design 3 handbook, 4 columns � Reduces number of components 3 and board space. R1 1 APPLICATIONS 2 � Especially suitable for space 1 2 reduction in interface and driver Top view circuits MAM278 � Inverter circuit configurations without use of an external resistor. Fig.1 Simplified outline (SOT323) and symbol. DESCRIPTION PNP resistor-equipped transistor in a MARKING SOT323 plastic package. NPN complement: PDTC114TU. TYPE MARKING 1 3 NUMBER CODE(1) PINNING PDTA114TU ?23 2 MGA893 - 1 Note PIN DESCRIPTION 1. ? = - : Made in Hong Kong. 1 base/input Fig.2 Equivalent inverter ? = t : Made in Malaysia. 2 emitter/ground

4.14. pdta114te_ 11 _sot416.pdf Size:29K _motorola

4.15. pdta114ee_2.pdf Size:57K _philips

4.16. pdta114es_2.pdf Size:58K _philips

4.17. pdta114eef_2.pdf Size:54K _philips

4.18. pdta114y_series.pdf Size:174K _philips

DISCRETE SEMICONDUCTORS DATA SHEET PDTA114Y series PNP resistor-equipped transistors; R1 = 10 k?, R2 = 47 k? Product data sheet 2004 Aug 02 Supersedes data of 2003 Sep 09 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; PDTA114Y series R1 = 10 k?, R2 = 47 k? FEATURES QUICK REFERENCE DATA � Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNIT � Simplified circuit design VCEO collector-emitter - -50 V � Reduction of component count voltage IO output current (DC) - -100 mA � Reduced pick and place costs. R1 bias resistor 10 - k? R2 bias resistor 47 - k? APPLICATIONS � General purpose switching and amplification DESCRIPTION � Inverter and interface circuits PNP resistor-equipped transistor (see �Simplified outline, � Circuit driver. symbol and pinning� for package details). PRODUCT OVERVIEW PACKAGE TYPE NUMBER MARKING CODE NPN COMPLEMENT PHILIPS EIAJ PDTA114YE SOT416 SC-75 36 PDTC114YE PDTA114YEF SOT490 SC-89 37 PDTC114YEF

4.19. pdta114eu_6.pdf Size:58K _philips

4.20. pdta114tk_3.pdf Size:53K _philips

4.21. pdta114ts_2.pdf Size:53K _philips

4.22. pdta114et_5.pdf Size:56K _philips

4.23. pdta114ek_2.pdf Size:57K _philips

4.24. pdta114e_series.pdf Size:175K _philips

DISCRETE SEMICONDUCTORS DATA SHEET PDTA114E series PNP resistor-equipped transistors; R1 = 10 k?, R2 = 10 k? Product data sheet 2004 Aug 02 Supersedes data of 2003 Apr 10 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; PDTA114E series R1 = 10 k?, R2 = 10 k? FEATURES QUICK REFERENCE DATA � Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNIT � Simplified circuit design VCEO collector-emitter - -50 V � Reduction of component count voltage IO output current (DC) - -100 mA � Reduced pick and place costs. R1 bias resistor 10 - k? R2 bias resistor 10 - k? APPLICATIONS � General purpose switching and amplification DESCRIPTION � Inverter and interface circuits PNP resistor-equipped transistor (see �Simplified outline, � Circuit driver. symbol and pinning� for package details). PRODUCT OVERVIEW PACKAGE TYPE NUMBER MARKING CODE NPN COMPLEMENT PHILIPS EIAJ PDTA114EE SOT416 SC-75 03 PDTC114EE PDTA114EEF SOT490 SC-89 03 PDTC114EEF

4.25. pdta114te_2.pdf Size:52K _philips

4.26. pdta114tt_3.pdf Size:51K _philips

4.27. pdta114t_ser.pdf Size:80K _philips

PDTA114T series PNP resistor-equipped transistors; R1 = 10 k?, R2 = open Rev. 07 � 20 April 2007 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Type number Package NPN complement NXP JEITA JEDEC PDTA114TE SOT416 SC-75 - PDTC114TE PDTA114TK SOT346 SC-59A TO-236 PDTC114TK PDTA114TM SOT883 SC-101 - PDTC114TM PDTA114TS[1] SOT54 SC-43A TO-92 PDTC114TS PDTA114TT SOT23 - TO-236AB PDTC114TT PDTA114TU SOT323 SC-70 - PDTC114TU [1] Also available in SOT54A and SOT54 variant packages (see Section 2). 1.2 Features 100 mA output current capability Reduces component count Built-in bias resistors Reduces pick and place costs Simplifies circuit design 1.3 Applications Digital applications Cost-saving alternative to BC857 series in digital applications Control of IC inputs Low current peripheral driver 1.4 Quick reference data Table 2. Quick reference data Sym

4.28. pdta114tu_3.pdf Size:54K _philips

4.29. dta114te-tua-tka_94_sot416_323_346.pdf Size:57K _rohm

Transistors Digital transistors (built in resistor) DTA114TE / DTA114TUA / DTA114TKA / DTA114TSA FFeatures FExternal dimensions (Units: mm) 1) Built-in circuit enables the configu- ration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin- film resistors with complete isola- tion to allow positive biasing of the input. They also have the advan- tage of almost completely eliminat- ing parasitic effects. 3) Only the on/off conditions need to be set for operation, making device design easy. FStructure PNP digital transistor (With single built in resistor) FEquivalent circuit (96-253-A114T) 330 Transistors DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA FAbsolute maximum ratings (Ta = 25_C) FElectrical characteristics (Ta = 25_C) FPackaging specifications 331 Transistors DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA FElectrical characteristic curves 332

4.30. dta114te.pdf Size:56K _rohm

4.31. dta114we-wua-wtka_74_sot416_323_346.pdf Size:46K _rohm

DTA114WE / DTA114WUA / DTA114WKA / DTA114WSA Transistors Transistors DTC114WE / DTC114WUA / DTC114WKA / DTC114WSA

4.32. dta114we.pdf Size:637K _rohm

DTA114W series Datasheet PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline EMT3 UMT3 Parameter Value OUT OUT VCC -50V IN IN IC(MAX.) -100mA GND GND R1 10kW DTA114WE DTA114WUA R2 SOT-416 (SC-75A) 4.7kW SOT-323 (SC-70) SMT3 lFeatures OUT 1) Built-In Biasing Resistors IN 2) Built-in bias resistors enable the configuration of GND an inverter circuit without connecting external DTA114WKA SOT-346 (SC-59) input resistors (see inner circuit). 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of lInner circuit completely eliminating parasitic effects. 4) Only the on/off conditions need to be set for operation, making the circuit design easy. 5) Complementary NPN Types :DTC114W series 6) Lead Free/RoHS Compliant. lApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit lPackagin

4.33. dta114w-series.pdf Size:141K _rohm

-100mA / -50V Digital transistors (with built-in resistors) DTA114WE / DTA114WUA / DTA114WKA ? Applications ? Dimensions (Unit : mm) Inverter, Interface, Driver EMT3 (SC-75A) 1.6 0.7 0.55 0.3 ? Features ( ) 3 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. ( ) ( ) 2 1 2)The bias resistors consist of thin-film resistors with complete 0.2 0.2 isolation to allow positive biasing of the input, and parasitic 0.15 0.5 0.5 effects are almost completely eliminated. 1.0 3)Only the on / off conditions need to be set for operation, (1) GND Each lead has same dimensions (2) IN making the device design easy. Abbreviated symbol : 74 (3) OUT 4)Higher mounting densities can be achieved. 2.0 0.9 UMT3 ? Structure 0.2 0.7 0.3 PNP epitaxial planar silicon transistor (Resistor built-in type) (3) ? Packaging specifications (2) (1) Package EMT3 UMT3 SMT3 0.65 0.6

4.34. dta114e-series.pdf Size:161K _rohm

100mA / 50V Digital transistors (with built-in resistors) DTA114EB / DTA114EM / DTA114EE / DTA114EUA / DTA114EKA Applications Inverter, Interface, Driver Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. Structure PNP epitaxial planar silicon transistor (Resistor built-in type) Dimensions (Unit : mm) DTA114EB 0.22 0.16 (3) (1) (2) (1) IN 0.37 0.17 0.35 (2) GND 0.6 (3) OUT Each lead has same dimensions ROHM : VMN3 Abbreviated symbol : 14 1.6 0.7 DTA114EM DTA114EE 1.2 0.55 0.3 0.32 (3) ( ) 3 (1)(2) 0.22 ( ) ( ) 2 1 0.13 (1) GND (1) IN 0.4 0.

4.35. dta114y.pdf Size:477K _rohm

DTA114Y series Datasheet PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) ?Outline VMT3 EMT3F Parameter Value OUT OUT VCC ?50V IN IN IC(MAX.) ?100mA GND GND R1 10k? DTA114YM DTA114YEB R2 47k? (SC-105AA) (SC-89) EMT3 UMT3F OUT ?Features OUT IN 1) Built-In Biasing Resistors IN GND GND 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external DTA114YUB DTA114YE (SC-85) SOT-416 (SC-75A) input resistors (see equivalent circuit). UMT3 SMT3 3) The bias resistors consist of thin-film resistors OUT with complete isolation to allow negative biasing OUT of the input. They also have the advantage of IN IN completely eliminating parasitic effects. GND GND 4) Only the on/off conditions need to be set for DTA114YKA DTA114YUA SOT-346 (SC-59) operation, making the circuit design easy. SOT-323 (SC-70) 5) Complementary NPN Types :DTC114Y series 6) Lead Free/RoHS Compliant. ?Inn

4.36. dta114ye.pdf Size:69K _rohm

Transistors Digital transistors (built-in resistors) DTA114YE / DTA114YUA / DTA114YKA / DTA114YSA FFeatures FExternal dimensions (Units: mm) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin- film resistors with complete isola- tion to allow positive biasing of the input. They also have the advan- tage of almost completely eliminat- ing parasitic effects. 3) Only the on/off conditions need to be set for operation, making device design easy. FStructure PNP digital transistor (Built-in resistor type) FEquivalent circuit (96-256-A114Y) 333 Transistors DTA114YE/DTA114YUA/DTA114YKA/DTA114YSA FAbsolute maximum ratings (Ta = 25_C) FElectrical characteristics (Ta = 25_C) FPackaging specifications 334 Transistors DTA114YE/DTA114YUA/DTA114YKA/DTA114YSA FElectrical characteristic curves 335

4.37. dta114ye-yua-yka_54sot416_323_346.pdf Size:69K _rohm

4.38. dta114eub.pdf Size:152K _rohm

-100mA / -50V Digital transistors (with built-in resistors) DTA114EUB Applications Dimensions (Unit : mm) Inverter, Interface, Driver UMT3F 2.0 0.9 0.32 Features (3) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). (1) (2) 2) The bias resistors consist of thin-film resistors 0.65 0.65 0.13 with complete isolation to allow negative biasing 1.3 of the input. They also have the advantage of Each lead has same dimensions almost completely eliminating parasitic effects. (1) IN 3) Only the on/off conditions need to be set for (2) GND Abbreviated symbol : 14 (3) OUT operation, making the device design easy. Structure Inner circuit PNP silicon epitaxial planar transistor type (Resistor built-in) OUT R1 IN R2 Packaging specifications GND(+) Package UMT3F Packaging type Taping IN OUT Code TL GND(+) Part No. Basic ordering unit (piec

4.39. dta114t.pdf Size:598K _rohm

DTA114T series Datasheet PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline VMT3 EMT3F Parameter Value Collector Collector VCEO -50V Base Base IC -100mA Emitter Emitter R1 10kW DTA114TM DTA114TEB (SC-105AA) (SC-89) EMT3 UMT3F Collector Collector lFeatures Base Base 1) Built-In Biasing Resistors Emitter Emitter 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external DTA114TE DTA114TUB SOT-416 (SC-75A) (SC-85) input resistors (see inner circuit). UMT3 SMT3 3) The bias resistors consist of thin-film resistors Collector Collector with complete isolation to allow negative biasing Base Base of the input. They also have the advantage of Emitter Emitter completely eliminating parasitic effects. 4) Only the on/off conditions need to be set for DTA114TKA DTA114TUA SOT-346 (SC-59) SOT-323 (SC-70) operation, making the circuit design easy.

4.40. dta114eeb.pdf Size:152K _rohm

100mA / 50V Digital transistors (with built-in resistors) DTA114EEB Applications Dimensions (Unit : mm) Inverter, Interface, Driver EMT3F 1.6 0.7 0.26 Features (3) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors (1) (2) with complete isolation to allow negative biasing 0.13 0.5 0.5 1.0 of the input. They also have the advantage of almost completely eliminating parasitic effects. (1) IN Each lead has same dimensions 3) Only the on/off conditions need to be set for (2) GND (3) OUT operation, making the device design easy. Abbreviated symbol : 14 Structure Inner circuit PNP silicon epitaxial planar transistor type (Resistor built-in) OUT R1 IN R2 Packaging specifications GND(+) Package EMT3F Packaging type Taping IN OUT Code TL Part No. Basic ordering unit (pieces) 3000 GND(+) D

4.41. dta114xx_14sot23_sot323_sot416.pdf Size:70K _rohm

Transistors Digital transistors (built-in resistors) DTA114EE / DTA114EUA / DTA114EKA / DTA114ESA FFeatures FExternal dimensions (Units: mm) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin- film resistors with complete isola- tion to allow positive biasing of the input. They also have the advan- tage of almost completely eliminat- ing parasitic effects. 3) Only the on/off conditions need to be set for operation, making device design easy. FStructure PNP digital transistor (Built-in resistor type) FEquivalent circuit (96-250-A114E) 327 Transistors DTA114EE/DTA114EUA/DTA114EKA/DTA114ESA FAbsolute maximum ratings (Ta = 25_C) FElectrical characteristics (Ta = 25_C) FPackaging specifications 328 Transistors DTA114EE/DTA114EUA/DTA114EKA/DTA114ESA FElectrical characteristic curves 329

4.42. dta114y-series.pdf Size:141K _rohm

-100mA / -50V Digital transistors (with built-in resistors) DTA114YM / DTA114YE / DTA114YUA / DTA114YKA ? Applications Inverter, Interface, Driver ? Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3)Only the on/off conditions need to be set for operation, making the device design easy. ? Structure PNP epitaxial planar silicon transistor (Resistor built-in type) ? Dimensions (Unit : mm) 1.6 0.7 DTA114YM DTA114YE 1.2 0.55 0.3 0.32 (3) ( ) 3 (1)(2) 0.22 ( ) ( ) 2 1 0.13 (1) GND (1) IN 0.4 0.4 0.5 0.2 0.2 (2) GND 0.15 (2) IN 0.8 0.5 0.5 (3) OUT (3) OUT 1.0 Each lead has same dimensions Each lead has same dimensions ROHM : VMT3 ROHM : EMT3

4.43. dta114ee.pdf Size:152K _rohm

100mA / 50V Digital transistors (with built-in resistors) DTA114EM / DTA114EE / DTA114EUA / DTA114EKA ?Applications Inverter, Interface, Driver ?Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. ?Structure PNP epitaxial planar silicon transistor (Resistor built-in type) ?Dimensions (Unit : mm) 1.6 0.7 DTA114EM DTA114EE 1.2 0.55 0.3 0.32 (3) ( ) 3 (1)(2) 0.22 ( ) ( ) 2 1 0.13 (1) GND (1) IN 0.4 0.4 0.5 0.2 0.2 (2) GND 0.15 (2) IN 0.8 0.5 0.5 (3) OUT (3) OUT 1.0 Each lead has same dimensions Each lead has same dimensions ROHM : VMT3 ROHM : EMT3 Abbrev

4.44. dta114t-series.pdf Size:138K _rohm

-100mA / -50V Digital transistors (with built-in resistors) DTA114TM / DTA114TE / DTA114TUA / DTA114TKA ? Applications Inverter, Interface, Driver ? Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. ? Structure PNP epitaxial planar silicon transistor (Resistor built-in type) ? Dimensions (Unit : mm) DTA114TM DTA114TE 1.6 0.7 1.2 0.55 0.3 0.32 (3) ( ) 3 (1)( ) 2 0.22 ( ) ( ) 2 1 0.13 0.4 0.4 0.5 0.2 0.2 0.15 (1) Base (1) Emitter 0.8 0.5 0.5 (2) Emitter (2) Base ROHM : VMT3 ROHM : EMT3 1.0 (3) Collector (3) Collector Abbreviated symbol : 94 Abbrevia

4.45. ddta114ylp.pdf Size:163K _diodes

DDTA114YLP PRE-BIASED SMALL SIGNAL SURFACE MOUNT PNP TRANSISTOR Please click here to visit our online spice models database. Features � Epitaxial Planar Die Construction � Ultra-Small Leadless Surface Mount Package 1 2 3 E 2 � Ideally Suited for Automated Assembly Processes 3 � Lead Free By Design/RoHS Compliant (Note 1) R2 C R1 � "Green" Device (Note 2) 1 B � Qualified to AEC-Q101 Standards for High Reliability Bottom View Top View Mechanical Data � Case: DFN1006-3 DFN1006-3 � Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 � Moisture Sensitivity: Level 1 per J-STD-020D B 1 3 C OUT IN OUT C 3 10k? � Terminal Connections: Collector Dot (See Diagram and B (or -supply) (or -supply) IN Marking Information) 1 R1 E E � Terminals: Finish � NiPdAu over Copper leadframe. R2 47k? Solderable per MIL-STD-202, Method 208 2 + Supply GND (or +supply) � Marking Information: See Page

4.46. dta114te.pdf Size:183K _mcc

MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth DTA114TE Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features � Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) � Epoxy meets UL 94 V-0 flammability rating PNP Digital Transistor � Moisure Sensitivity Level 1 � Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit) � The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects SOT-523 � Only the on/off conditions need to be set for operation, making A device design easy D Absolute Maximum Ratings 3 1. Base C B Parameter Symbol Value Unit 2. Emitter 1 2 3. Collector Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -5

4.47. dta114tua_sot-323.pdf Size:202K _mcc

MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components DTA114TUA CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features � Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) � Epoxy meets UL 94 V-0 flammability rating � Moisure Sensitivity Level 1 PNP Digital Transistor � Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit) � The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects � Only the on/off conditions need to be set for operation, making SOT-323 device design easy A D 3 1: Base Absolute Maximum Ratings 2: Emitter Parameter Symbol Value Unit C B 3: Collector Collector-Base Voltage VCBO -50 V 1 2 Collector-Emitter Voltage VCEO -

4.48. dta114eua.pdf Size:167K _mcc

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth DTA114EUA Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features � Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) � Epoxy meets UL 94 V-0 flammability rating PNP � Moisure Sensitivity Level 1 Digital Transistors � Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors � The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. � Only the on/off conditions need to be set for operation, making SOT-323 device design easy A D Absolute maximum ratings @ 25 3 Symbol Parameter Min Typ Max Unit 1: IN VCC Supply voltage --- -50 --- V C B 2: GND VIN Input voltage -40 --- 10 V 3: OUT IO -50 1 2 --- --- mA IC(

4.49. dta114eet_6a-m_sot416.pdf Size:135K _onsemi

DTA114EET1 SERIES Preferred Devices Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor http://onsemi.com Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base�emitter resistor. The BRT eliminates these individual components by PNP SILICON integrating them into a single device. The use of a BRT can reduce BIAS RESISTOR both system cost and board space. The device is housed in the TRANSISTORS SC�75/SOT�416 package which is designed for low power surface mount applications. � Simplifies Circuit Design � Reduces Board Space 3 � Reduces Component Count 2 � The SC�75/SOT�416 package can be soldered using 1 wave or reflow. The modified gull�winged leads absorb thermal stress during soldering eliminatin

4.50. dta114eet1.pdf Size:108K _onsemi

DTA114EET1 Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single http://onsemi.com device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a PNP SILICON BIAS base-emitter resistor. The BRT eliminates these individual RESISTOR TRANSISTORS components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-75/SOT-416 package which is designed for low power PIN 3 COLLECTOR surface mount applications. (OUTPUT) PIN 1 R1 Features BASE (INPUT) � Simplifies Circuit Design R2 � Reduces Board Space PIN 2 � Reduces Component Count EMITTER (GROUND) � The SC-75/SOT-416 package can be soldered using wave or reflo

4.51. dta114exv3t1.pdf Size:121K _onsemi

DTA114EXV3T1 Series Preferred Devices Digital Transistors (BRT) PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor http://onsemi.com contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The digital transistor eliminates these individual components by PNP SILICON integrating them into a single device. The use of a digital transistor can DIGITAL reduce both system cost and board space. The device is housed in the TRANSISTORS SC-89 package which is designed for low power surface mount applications. � Simplifies Circuit Design PIN 3 � Reduces Board Space COLLECTOR � Reduces Component Count (OUTPUT) PIN 1 R1 � Available in 8 mm, 7 inch/3000 Unit Tape & Reel BASE (INPUT) � Lead-Free Plating (Pure Sn) R2 PIN 2 E

4.52. dta114em3-d.pdf Size:121K _onsemi

DTA114EM3T5G Series Preferred Devices Digital Transistors (BRT) PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor http://onsemi.com contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The digital transistor eliminates these individual components by PNP SILICON integrating them into a single device. The use of a digital transistor can DIGITAL reduce both system cost and board space. The device is housed in the TRANSISTORS SOT-723 package which is designed for low power surface mount applications. � Simplifies Circuit Design PIN 3 � Reduces Board Space COLLECTOR � Reduces Component Count (OUTPUT) PIN 1 R1 � The SOT-723 Package can be Soldered using Wave or Reflow. BASE (INPUT) � Available in 4 mm, 8000 Unit

4.53. dta114y_series.pdf Size:151K _secos

DTA114YE / DTA114YUA / DTA114YSA / DTA114YCA Elektronische Bauelemente PNP Digital Transistors (Built-in Resistors) RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES ? Built-in bias resistors enable the configuration of an inverter circuit without connecting input DTA114YE (SOT-523) DTA114YUA (SOT-323)? resistors (see equivalent circuit). ?: In ?: In ? Only the on/off conditions need to be set for ?: Gnd ?: Gnd operation, making device design easy. ?: Out ?: Out ? The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. EQUIVALENT CIRCUIT DTA114YSA (TO-92S) DTA114YCA (SOT-23) ?: In ?: In ?: Out ?: Gnd ?: Gnd ?: Out ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Ratings Parameter Symbol Unit E UA CA SA Supply voltage VCC -50 V Input voltage VIN -40 ~ +6 V IO -70 Outpu

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DTA114TE / DTA114TUA / DTA114TCA / DTA114TSA PNP Digital Transistors (Built-in Resistors) Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES ? Built-in bias resistors enable the configuration of an inverter circuit without connecting external DTA114TE (SOT-523) DTA114TUA (SOT-323)? input resistors. ? The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. ? Only the on/off conditions need to be set for operation, making device design easy. EQUIVALENT CIRCUIT Addreviated symbol:94 Addreviated symbol:94 DTA114TSA (TO-92S) DTA114TCA (SOT-23) Addreviated symbol:94 ABSOLUTE MAXIMUM RATINGS at (TA = 25°C unless otherwise noted) LIMITS(DTA114T?) Parameter Symbol Unit E UA CA SA Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V

4.55. dta114te.pdf Size:729K _htsemi

DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA/DTA114TCA TRANSISTOR(PNP) FEATURES · Built-in bias resistors enable the configuration of an inverter circuit without connecting ex temal input resistors. · The bias resistors conisit of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely Eliminating parasitic effects. · Only the on/off conditions need to be set for operation, marking device design easy. PIN CONNENCTIONS AND MARKING DTA114TE DTA114TUA (1) Base (2) Emitter (3) Collector SOT-323 Addreviated symbol: 94 Addreviated symbol: 94 SOT-523 DTA114TKA DTA114TCA DTA114ECA (1) Base (2) Emitter (3) Collector SOT-23 Addreviated symbol: 94 SOT-23-3L Addreviated symbol: 94 DTA114TSA TO-92S 1 JinYu www.htsemi.com semiconductor Date:2011/05 DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA/DTA114TCA MAXIMUM RA TINGS* TA=25? unless otherwise noted Symbol Para

4.56. dta114ysa.pdf Size:493K _htsemi

DTA114YE/DTA114YUA/DTA114YKA /DTA114YSA/DTA114YCA TRANSISTOR(PNP) FEATURES 1. Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit). 2. The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.They also have the advantage of almost completely eliminating parasitic effects. 3. Only the on/off conditions need to be set for operation, making device design easy. PIN CONNENCTIONS AND MARKING DTA114YE DTA114YUA DTC114EUA SOT-323 SOT-523 Addreviated symbol: 54 Addreviated symbol: 54 DTA114YKA DTA114YCA SOT-23 SOT-23-3L Addreviated symbol: 54 Addreviated symbol: 54 DTA114YSA TO-92S 1 JinYu www.htsemi.com semiconductor Date:2011/05 DTA114YE/DTA114YUA/DTA114YKA /DTA114YSA/DTA114YCA Absolute maximum ratings(Ta=25?) Limits (DTA114Y? ) Parameter Symbol Unit E UA KA CA SA Supply voltage VCC -50 V Input

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DT A114EE/DTA114EUA/DTA114EKA /DTA114ESA/DTA114ECA Digital transistors (PNP) FEATURES 1. Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit). 2. The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.They also have the advantage of almost completely eliminating parasitic effects. 3. Only the on/off conditions need to be set for operation, making device design easy. PIN CONNENCTIONS AND MARKING DTA114EE DTA114EUA SOT-323 SOT-523 Addreviated symbol: 14 Addreviated symbol: 14 DTA114EKA DTA114ECA DTA114ECA SOT-23-3L SOT-23 Addreviated symbol: 14 Addreviated symbol: 14 DTA114ESA TO-92S 1 JinYu www.htsemi.com semiconductor Date:2011/05 DT A114EE/DTA114EUA/DTA114EKA /DTA114ESA/ DTA114ECA Absolute maximum ratings(Ta=25?) Limits (DTA114E?) Parameter Symbol Unit E UA CA KA SA Supply voltage VCC -50

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? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GMDTA114E DESCRIPTION&EQUIVALENT CIRCUIT ¦DESCRIPTION&EQUIVALENT CIRCUIT ??????? DESCRIPTION&EQUIVALENT CIRCUIT PNP DIGITAL TRANSISTOR(BUILT-IN RESISTORS)?????(????) MAXIMUM RATINGS ¦MAXIMUM RATINGS ????? MAXIMUM RATINGS Characteristic Symbol Rating Unit ???? ?? ??? ?? Supply Voltage VCC -50 V ???? Input Voltage VIN -40 ~ 10 V ???? Output Current IO(MAX) -100 mA ???? Power Dissipation PD 200 mW ???? Junction Temperature ? Tj 125 ?? Storage Temperature Tstg -55 ~ +125 ? ???? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING DTA114E=14 DTA114E=14 DTA114E=14 ? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GMDTA114E ELECTRICAL CHARACTERISTICS ¦ELECTRICAL CHARACTERISTICS ??? ELECTRICAL CHARACTERI

4.68. dta114.pdf Size:194K _lge

DTA114EE/DTA114EUA/DTA114EKA/ DTA114ESA/DTA114ECA Digital Transistor (PNP) Features 1. Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit). 2. The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3. Only the on/off conditions need to be set for operation, making device design easy. PIN CONNENCTIONS AND MARKING DTA114EE DTA114EUA SOT-323 SOT-523 Addreviated symbol: 14 Addreviated symbol: 14 DTA114EKA DTA114ECA DTA114ECA SOT-23-3L SOT-23 Addreviated symbol: 14 Addreviated symbol: 14 DTA114ESA TO-92S DTA114EE/DTA114EUA/DTA114EKA/ DTA114ESA/DTA114ECA Digital Transistor (PNP) Absolute maximum ratings(Ta=25?) Limits (DTA114E?) Parameter Symbol Unit E UA CA KA SA Supply voltage VCC -50 V Input voltage VIN -40

4.69. dta114y.pdf Size:131K _lge

DTA114YE/DTA114YUA/DTA114YKA DTA114YSA/DTA114YCA Digital Transistor(PNP) Features 1. Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit). 2. The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input.They also have the advantage of almost completely eliminating parasitic effects. 3. Only the on/off conditions need to be set for operation, making device design easy. PIN CONNENCTIONS AND MARKING DTA114YE DTA114YUA DTC114EUA SOT-323 SOT-523 Addreviated symbol: 54 Addreviated symbol: 54 DTA114YKA DTA114YCA SOT-23 SOT-23-3L Addreviated symbol: 54 Addreviated symbol: 54 DTA114YSA TO-92S DTA114YE/DTA114YUA/DTA114YKA DTA114YSA/DTA114YCA Digital Transistor(PNP) Absolute maximum ratings(Ta=25?) Limits (DTA114Y? ) Parameter Symbol Unit E UA KA CA SA Supply voltage VCC -50 V Input voltage VIN -40to+6 V

4.70. dta114t.pdf Size:130K _lge

DTA114TE/DTA114TUA/DTA114TCA DTA114TKA/DTA114TSA Transistor(PNP) Features Built-in bias resistors enable the configuration of an inverter circuit without connecting extemal input resistors. The bias resistors conisit of thin-film resistors with complete isolation to without connecting extemal input. They also have the advantage of almost completely Eliminating parasitic effects. Only the on/off conditions need to be set for operation, marking device design easy. PIN CONNENCTIONS AND MARKING DTA114TE DTA114TUA (1) Base (1) Base (1) Base (1) Base (2) Emitter (2) Emitter (2) Emitter (2) Emitter (3) Collector (3) Collector (3) Collector (3) Collector SOT-323 Addreviated symbol: 94 Addreviated symbol: 94 SOT-523 DTA114TKA DTA114TCA DTA114ECA (1) Base (1) Base (1) Base (2) Emitter (2) Emitter (2) Emitter (3) Collector (3) Collector (3) Collector SOT-23 Addreviated symbol: 94 SOT-23-3L Addreviated symbol: 94 DTA114TSA

4.71. dta114em.pdf Size:1203K _wietron

DTA114EM Series Bias Resistor Transistor PNP Silicon 3 P b Lead(Pb)-Free COLLECTOR 1 3 2 R1 1 R2 BASE SOT-723 2 EMITTER Maximum Ratings (TA=25°C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage VCBO V 50 VCEO Collector-Emitter Voltage 50 V mA IC 100 Collector Current-Continuous Thermal Characteristics Characteristics Symbol Max Unit Total Device Dissipation FR-5 Board 260 mW FR-4 Board(1) TA=25?C PD 2.0 mW/°C Derate above 25?C Thermal Resistance, Junction to Ambient(1) R?JA 480 ?C/W Total Device Dissipation FR-5 Board 600 mW FR-4 Board(2) TA=25?C PD 4.8 mW/°C Derate above 25?C R?JA 205 °C/W Thermal Resistance, Junction to Ambient(2) TJ -55 to +150 Junction Temperature Range °C Storage Temperature Range Tstg -55 to +150 °C 1. FR-4 @ Minimum pad 2. FR-4 @1.0 x 1.0 Inch pad Device Marking and Resistor Values Device Marking R1(K) R2(K) Device Marking R1(K) R2(K) 10 DTA114EM 6A 10 DTA143EM 6J 4.7 4.7 DTA143

4.72. dta114ee.pdf Size:800K _wietron

DTA114EE Series Bias Resistor Transistor PNP Silicon 3 3 P b Lead(Pb)-Free COLLECTOR 1 2 3 R1 1 R2 BASE SC-89 (SOT-523F) 2 EMITTER Maximum Ratings (TA=25°C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage 50 V VCEO VCBO V Collector-Base Voltage 50 mA IC 100 Collector Current-Continuous Thermal Characteristics Characteristics Symbol Max Unit Total Device Dissipation FR-5 Board 200 mW FR-4 Board(1) TA=25?C PD 1.6 mW/ ?C Derate above 25?C Thermal Resistance, Junction to Ambient(1) R?JA 600 ?C/W Total Device Dissipation FR-5 Board 300 mW FR-4 Board(2) TA=25?C PD 2.4 mW/ ?C Derate above 25?C R?JA 400 ?C/W Thermal Resistance, Junction to Ambient(2) TJ Junction Temperature Range -55 to +150 ?C Storage Temperature Range Tstg -55 to +150 ?C 1.FR-4 @ Minimum pad 2.FR-4 @1.0 x 1.0 Inch pad Device Marking and ResistorValues Device Marking R1(K) R2(K) Device Marking R1(K) R2(K) 10 DTA114EE 6A 10 DTA123EE 6H 2.2 2.2

See also transistors datasheet: DTA113ZKA , DTA113ZSA , DTA113ZUA , DTA114ECA , DTA114EEA , DTA114EKA , DTA114ESA , DTA114EUA , BC549 , DTA114GKA , DTA114GSA , DTA114TEA , DTA114TKA , DTA114TSA , DTA114TUA , DTA114WEA , DTA114WKA .

Keywords

DTA114GEA Datasheet	DTA114GEA Datenblatt	DTA114GEA RoHS	DTA114GEA Distributor
DTA114GEA Application Notes	DTA114GEA Component	DTA114GEA Circuit	DTA114GEA Schematic
DTA114GEA Equivalent	DTA114GEA Cross Reference	DTA114GEA Data Sheet	DTA114GEA Fiche Technique


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