DTS801 Transistor Datasheet. Parameters and Characteristics.

Type Designator: DTS801

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 100

Maximum collector-base voltage |Ucb|, V: 1000

Maximum collector-emitter voltage |Uce|, V: 800

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 2

Maximum junction temperature (Tj), °C: 140

Transition frequency (ft), MHz: 1.5

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of DTS801 transistor: TO3

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See also transistors datasheet: DTS708 , DTS709 , DTS710 , DTS712 , DTS714 , DTS720 , DTS721 , DTS723 , BC547 , DTS802 , DTS804 , DTS812 , DTS812MX , DTS814 , DW6089 , DW6170 , DW6208 .

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