ECG123AP
Transistor Datasheet. Parameters and Characteristics. Type Designator: ECG123AP
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.5
Maximum collector-base voltage |Ucb|, V: 75
Maximum collector-emitter voltage |Uce|, V: 40
Maximum emitter-base voltage |Ueb|, V: 0
Maximum collector current |Ic max|, A: 0.8
Maximum junction temperature (Tj), °C: 175
Transition frequency (ft), MHz: 300
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 200
Noise Figure, dB: - Package of ECG123AP
transistor: TO92
ECG123AP
Equivalent Transistors - Cross-Reference Search ECG123AP
PDF doc:NO PDF! See also transistors datasheet: ECG103A
, ECG106
, ECG107
, ECG108
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, ECG123A
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. Keywords| ECG123AP
Datasheet | ECG123AP
Datenblatt | ECG123AP
RoHS | ECG123AP
Distributor | | ECG123AP
Application Notes | ECG123AP
Component | ECG123AP
Circuit | ECG123AP
Schematic | | ECG123AP
Equivalent | ECG123AP
Cross Reference | ECG123AP
Data Sheet | ECG123AP
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