2N3552 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N3552

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 40

Maximum collector-base voltage |Ucb|, V: 140

Maximum collector-emitter voltage |Uce|, V: 80

Maximum emitter-base voltage |Ueb|, V: 4

Maximum collector current |Ic max|, A: 12

Maximum junction temperature (Tj), °C:

Transition frequency (ft), MHz: 40

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of 2N3552 transistor: X21

2N3552 Equivalent Transistors - Cross-Reference Search

2N3552 PDF document for downloads:

5.1. 2n3553.pdf Size:45K _philips

DISCRETE SEMICONDUCTORS DATA SHEET 2N3553 Silicon planar epitaxial overlay transistor 1995 Oct 27 Product specification Supersedes data of October 1981 File under Discrete Semiconductors, SC08a Philips Semiconductors Product specification Silicon planar epitaxial 2N3553 overlay transistor APPLICATIONS DESCRIPTION • The 2N3553 is intended for use in VHF and UHF The device is a silicon NPN overlay transistor in a TO-39 transmitting applications. metal package with the collector connected to the case. PINNING - TO-39/3 PIN DESCRIPTION 1 emitter 1 2 base handbook, halfpage 2 3 collector MBB199 3 Fig.1 Simplified outline. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MAX. UNIT VCEX collector-emitter voltage IC ? 200 mA; VBE = -1.5 V 65 V VCEO collector-emitter voltage open base; IC ? 200 mA 40 V ICM peak collector current 1.0 A Ptot total power dissipation up to Tmb =25°C 7.0 W Tj junction temperature 200 °C fT transition frequency IC = 125 mA; VCE = 28

5.2. 2n3558.pdf Size:11K _semelab

2N3558 Dimensions in mm (inches). Bipolar NPNP Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPNP Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = dia. IC = 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 can be processed in accordance with the 0.74 (0.029) requirements of BS, CECC and JAN, 1.14 (0.045) 0.71 (0.028) JANTX, JANTXV and JANS specifications 0.86 (0.034) 45° TO39 (TO205AD) PINOUTS 1 – Emitter 2 – Base 3 – Collector Parameter Test Conditions Min. Typ. Max. Units VCEO* V IC(CONT) A hFE @ (VCE / IC) - ft Hz PD W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab

See also transistors datasheet: 2N3545 , 2N3546 , 2N3547 , 2N3548 , 2N3549 , 2N355 , 2N3550 , 2N3551 , 8050 , 2N3553 , 2N3554 , 2N356 , 2N3563 , 2N3564 , 2N3565 , 2N3566 , 2N3567 .

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