ECG210 Transistor Datasheet. Parameters and Characteristics.

Type Designator: ECG210

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 6.2

Maximum collector-base voltage |Ucb|, V: 90

Maximum collector-emitter voltage |Uce|, V: 75

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 1

Maximum junction temperature (Tj), °C: 175

Transition frequency (ft), MHz: 200

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 120

Noise Figure, dB: -

Package of ECG210 transistor: TO202

ECG210 Equivalent Transistors - Cross-Reference Search

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See also transistors datasheet: ECG194 , ECG195A , ECG196 , ECG197 , ECG198 , ECG199 , ECG20 , ECG21 , BC549 , ECG211 , ECG214 , ECG215 , ECG216 , ECG217 , ECG218 , ECG219 , ECG22 .

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