ESM639
Transistor Datasheet. Parameters and Characteristics. Type Designator: ESM639
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.8
Maximum collector-base voltage |Ucb|, V: 80
Maximum collector-emitter voltage |Uce|, V: 80
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 1
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz:
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 40
Noise Figure, dB: - Package of ESM639
transistor: TO92
ESM639
Equivalent Transistors - Cross-Reference Search ESM639
PDF document for downloads: PDF unavailable! See also transistors datasheet: ESM6045AV
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. Keywords| ESM639
Datasheet | ESM639
Datenblatt | ESM639
RoHS | ESM639
Distributor | | ESM639
Application Notes | ESM639
Component | ESM639
Circuit | ESM639
Schematic | | ESM639
Equivalent | ESM639
Cross Reference | ESM639
Data Sheet | ESM639
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