FC113 Transistor Datasheet. Parameters and Characteristics.

Type Designator: FC113

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.3

Maximum collector-base voltage |Ucb|, V: 50

Maximum collector-emitter voltage |Uce|, V: 50

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 50

Noise Figure, dB: -

Package of FC113 transistor: SOT223

FC113 Equivalent Transistors - Cross-Reference Search

FC113 PDF document for downloads:

1.1. fc113.pdf Size:50K _sanyo

Ordering number:EN3081 FC113 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications Features Package Dimensions · On-chip bias resistors (R1=10k? , R2=10k? ) unit:mm · Composite type with 2 transistors contained in the 2067 CP package currently in use, improving the mount- [FC113] ing efficiency greatly. · The FC113 is formed with two chips, being equiva- lent to the 2SA1344, placed in one package. · Excellent in thermal equilibrium and pair capability. Electrical Connection E1:Emitter1 B1:Base1 C2:Collerctor2 E2:Emitter2 B2:Base2 C1:Collerctor1 SANYO:CP6 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO –50 V Collector-to-Emitter Voltage VCEO –50 V Emitter-to-Base Voltage VEBO –10 V Collector Current IC –100 mA Collector Current (Pulse) ICP –200 mA Collector Dissipation PC 1 unit 200 mW Total Dissipation PT 300 mW Junction Temperature Tj 150 ?C Storage Tem

See also transistors datasheet: FC105 , FC106 , FC107 , FC108 , FC109 , FC110 , FC111 , FC112 , 2N3053 , FC114 , FC115 , FC116 , FC119 , FC120 , FC156 , FC157 , FCS6208 .

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