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2N3638 Transistor. Datasheet pdf. Equivalent

Type Designator: 2N3638

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 125 °C

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 20 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO106

2N3638 Transistor Equivalent Substitute - Cross-Reference Search

2N3638 Datasheet PDF:

5.1. 2n3634_2n3635.pdf Size:87K _central

2N3638
2N3638

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

5.2. 2n3634_2n3635_2n3636_2n3637.pdf Size:219K _bocasemi

2N3638
2N3638

Boca Semiconductor Corp. BSC http://www.bocasemi.com http://www.bocasemi.com http://www.bocasemi.com http://www.bocasemi.com http://www.bocasemi.com http://www.bocasemi.com http://www.bocasemi.com

5.3. 2n3635_6_7.pdf Size:247K _cdil

2N3638
2N3638

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR RF TRANSISTORS 2N3635 2N3636 2N3637 TO-39 Metal Can Package 2N3635 and 2N3637 Are PNP Silicon Transistros For High Voltage Switching and Low Power Amplifier. ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL 2N3635 2N3636, 37 UNITS Collector Emitt

5.4. 2n3375_2n3632_2n3733.pdf Size:609K _microsemi

2N3638
2N3638

Datasheet: 2N3634 , 2N3634S , 2N3635 , 2N3635S , 2N3636 , 2N3636S , 2N3637 , 2N3637S , MJE13003 , 2N3638A , 2N3639 , 2N364 , 2N3640 , 2N3641 , 2N3642 , 2N3643 , 2N3644 .

 


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