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FMMT4125 Transistor Datasheet. Parameters and Characteristics.

Type Designator: FMMT4125

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.31

Maximum collector-base voltage |Ucb|, V: 30

Maximum collector-emitter voltage |Uce|, V: 30

Maximum emitter-base voltage |Ueb|, V: 4

Maximum collector current |Ic max|, A: 0.2

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 200

Collector capacitance (Cc), pF: 5

Forward current transfer ratio (hFE), min: 50

Noise Figure, dB: -

Package of FMMT4125 transistor: SOT23

FMMT4125 Equivalent Transistors - Cross-Reference Search

FMMT4125 PDF doc:

1.1. fmmt4125.pdf Size:27K _diodes

SOT SI I O A A T S IT HI T A SISTO ISS A H T I D T I D A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V i II I Di i i T ° i T T T ° T I A HA A T ISTI S a Ta T I IT DITI II V V I µ V I II i V V I V I i V V I µ V I II I V V i I V V II i V V I I i V I i V V I I i V I i I V V T i I V V T i i T I V V i V V I I i V V I i i i I µ V V ? i II i I I V V T S IT HI HA A T ISTI S a Ta T T IT DITI D I Ti V V V V I I i Ti 8 Ti V V I I I II Ti I i i I i µ D I ?

3.1. fmmt4123.pdf Size:27K _diodes

SOT SI I O A A T S IT HI T A SISTO ISS A H T I D T I A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V i II I Di i i T ° i T T T ° T I A HA A T ISTI S a Ta T I IT DITI II V V I µ V I II i V V I V I i V V I µ V I II I V V i I V V II i V V I I i V I i V V I I i V I i I V V T i I V V T i i T I V V i V V I I i 8 V V I i i i I µ V V ? i II i I I V V T S IT HI HA A T ISTI S a Ta T T IT DITI D I Ti V V V V I I i Ti Ti V V I I I II Ti I i i I i µ D I ?

3.2. fmmt4126.pdf Size:27K _diodes

SOT SI I O A A T 6 S IT HI T A SISTO ISS A H T I D T I A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V i II I Di i i T ° i T T T ° T I A HA A T ISTI S a Ta T I IT DITI II V V I µ V I II i V V I V I i V V I µ V I II I V V i I V V II i V V I I i V I i V V I I i V I i I V V T i I V V T i i T I V V i V V I I i V V I i i i I µ V V ? i II i I 8 I V V T S IT HI HA A T ISTI S a Ta T T IT DITI D I Ti V V V V I I i Ti 8 Ti V V I I I II Ti I i i I i µ D I ?

3.3. fmmt4124.pdf Size:27K _diodes

SOT SI I O A A T S IT HI T A SISTO ISS A H T I D T I A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V i II I Di i i T ° i T T T ° T I A HA A T ISTI S a Ta T I IT DITI II V V I µ V I II i V V I V I i V V I µ V I II I V V i I V V II i V V I I i V I i V V I I i V I i I V V T i I V V T i i T I V V i V V I I i 8 V V I i i i I µ V V ? i II i I 8 I V V T S IT HI HA A T ISTI S a Ta T T IT DITI D I Ti V V V V I I i Ti Ti V V I I I II Ti I i i I i µ D I ?

3.4. fmmt4124.pdf Size:386K _htsemi

FMMT4124 TRANSISTOR (NPN) SOT–23 FEATURES ? Switching Application MARKING:ZC 1. BASE MAXIMUM RATINGS (Ta=25? unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 25 V CEO V Emitter-Base Voltage 5 V EBO IC Collector Current 200 mA PC Collector Power Dissipation 330 mW R Thermal Resistance From Junction To Ambient 378 ?/W ?JA T Junction Temperature 150 ? j T Storage Temperature -55~+150 ? stg ELECTRICAL CHARACTERISTICS (Ta=25? unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=10µA, IE=0 30 V Collector-emitter breakdown voltage V * I =1mA, I =0 25 V (BR)CEO C B Emitter-base breakdown voltage V I =10µA, I =0 5 V (BR)EBO E C Collector cut-off current I V =20V, I =0 50 nA CBO CB E Emitter cut-off current I V =3V, I =0 50 nA EBO EB C hFE(1) * VCE=1V, IC=2mA 120 360 DC c

See also transistors datasheet: FMMT3905R , FMMT3906 , FMMT3906R , FMMT3962 , FMMT4121 , FMMT4122 , FMMT4123 , FMMT4124 , 2N2222A , FMMT4126 , FMMT4140 , FMMT4141 , FMMT4142 , FMMT4143 , FMMT4146 , FMMT415 , FMMT417 .

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