FMMT489 Transistor Datasheet. Parameters and Characteristics.

Type Designator: FMMT489

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.5

Maximum collector-base voltage |Ucb|, V: 50

Maximum collector-emitter voltage |Uce|, V: 30

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 1

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 150

Collector capacitance (Cc), pF: 10

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of FMMT489 transistor: TO236

FMMT489 Equivalent Transistors - Cross-Reference Search

FMMT489 PDF document for downloads:

1.1. fmmt489.pdf Size:48K _diodes

SOT SI I O A A T 8 DI O T A SISTO ISS O TO T V I i I i ? a A a T T T 8 T I D T I 8 A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V i II I I I I Di i i T ° i T T T ° T I A HA A T ISTI S a Ta T I IT DITI V I V V I µ V V I V V I µ II I V V I V V i I V V II i V V I I i V I V I I i V V I I i V I i V V I V V T V I i I V V T i I V V I V V I V V T i i I V V T II V V V I I i i I i µ D I ? i I i i T

5.1. fmmt449.pdf Size:27K _fairchild_semi

FMMT449 C E B SuperSOTTM-3 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Sourced from Process NB. Absolute Maximum Ratings* T A = 25°C unless otherwise noted Symbol Parameter FMMT449 Units 30 V VCEO Collector-Emitter Voltage 50 V VCBO Collector-Base Voltage 5 V VEBO Emitter-Base Voltage Collector Current - Continuous 1 A IC - Peak Pulse Current 2 -55 to +150 °C TJ, Tstg Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics T A = 25°C unless otherwise noted Max Symbol Characteristic Units FMMT449 Total Device Di

5.2. fmmt494.pdf Size:126K _diodes

SOT SI I O A A T DI O T A SISTO ISS O T I D T I A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V i II I I I I Di i i T ° i T T T ° T I A HA A T ISTI S a Ta T I IT DITI V I V V I µ V V I V V I µ II I V V I V V i I V V II i V V I I i V I V I I i V V I I i V I i V V I V V T V I i I V V T i I V V I V V I V V T i i I V V T II V V V I I i i I i µ D I ?  T TYPICAL CHARACTERISTICS I II I II a I a I I II I II a I h I µ V II i V I V I II on I Sa O a in A a

5.3. fmmt413.pdf Size:145K _diodes

FMMT413 SOT23 NPN silicon planar avalanche transistor Summary V(BR)CES = 150V, V(BR)CEO = 50V, IUSB = 25A Description The FMMT413 is a NPN silicon planar bipolar transistor optimized for avalanche mode operation. Tight process control and low inductance packaging combine to produce high current pulses with fast edges, ideal for laser diode driving. Features C • Avalanche mode operation • 50A peak avalanche current B • Low inductance packaging Applications E • Laser LED drivers • Fast edge generation • High speed pulse generators E C Ordering information Device Reel size Tape width Quantity per B (inches) (mm) reel Pinout - top view FMMT413TD 7 8 500 FMMT413TA 7 8 3,000 Device marking 413 Issue 3 - March 2006 1 www.zetex.com © Zetex Semiconductors plc 2006 FMMT413 Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage BVCBO 150 V Collector-emitter voltage BVCEO 50 V Emitter-base voltage BVEBO 6V Peak pulse current (25ns Pulse

5.4. fmmt451.pdf Size:121K _diodes

SOT SI I O A A T HI H O A T A SISTO ISS O TO T i I i 00 ? a A a i T T T T I D T I A SO T A I ATI S T V IT II V I V 8 V II i V I V V i V I V V I I i II I I Di i i T ° i T T T ° T I A HA A T ISTI S a Ta T I IT DITI II V 8 V I µ V I II i V V I i i V I i V V I µ V I V II I µ V V i I µ V V II i V V I I i V I i V V I I i V I i I V V T i I V V T i i I V V T i V V V I i i I i µ D I ? 8  T TYPICAL CHARACTERISTICS I - II I - II VCE(sat) v IC Switching Speeds I - II I - II hFE v IC VBE(sat) v IC µ I - II V II i V I V VBE(on) v IC Sa O a in A a V - (Volts) Switching time h V - (Volts) V - (Volts)

5.5. fmmt497.pdf Size:158K _diodes

FMMT497 SOT23 NPN silicon planar high voltage high performance transistor Complementary part number - FMMT597 C Device marking - 497 B E E C B Pinout - top view Absolute maximum ratings Parameter Symbol Value Unit Collector-base voltage VCBO 300 V Collector-emitter voltage VCEO 300 V Emitter-base voltage VEBO 5V Continuous collector current IC 500 mA Peak pulse current ICM 1A Base current IB 200 mA Power dissipation at Tamb=25°C Ptot 500 mW Operating and storage temperature range Tj:Tstg -55 to +150 °C Issue 4 - November 2006 1 www.zetex.com © Zetex Semiconductors plc 2006 FMMT497 Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Max Unit Conditions . Collector-base V(BR)CBO 300 V IC = 100 A breakdown voltage Collector-emitter VCEO(sus) 300 V IC = 10mA (*) breakdown voltage Emitter-base V(BR)EBO 5V IE = 100 A breakdown voltage Collector cut-off current ICBO 100 nA VCB = 250V Collector cut-off current ICE

5.6. fmmt4400_fmmt4401.pdf Size:29K _diodes

SOT23 NPN SILICON PLANAR 400 FMMT4400 GENERAL PURPOSE TRANSISTORS 401 FMMT4401 ISSUE 4 – FEBRUARY 1997 E T I D T I T C T V B ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V i II I Di i i T ° i T T T ° ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) T T T I I IT DITI II i V V I I V I II V V I I V I i V V I I II i I µ V V V V I µ V V V V i I V V I V V T i 8 I V V I V V I V V II i V V I I i V I V I I i V V I I i V I V I I T i i I V V T i V V I I i i V V I I i i I i µ D I ? FMMT4400 FMMT4401 SWITCHING CHARACTERISTICS (at Tamb= 25°C ) T I IT DITI T Ti V V V V I I i T Ti V V I I I i

5.7. fmmt4123.pdf Size:27K _diodes

SOT SI I O A A T S IT HI T A SISTO ISS A H T I D T I A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V i II I Di i i T ° i T T T ° T I A HA A T ISTI S a Ta T I IT DITI II V V I µ V I II i V V I V I i V V I µ V I II I V V i I V V II i V V I I i V I i V V I I i V I i I V V T i I V V T i i T I V V i V V I I i 8 V V I i i i I µ V V ? i II i I I V V T S IT HI HA A T ISTI S a Ta T T IT DITI D I Ti V V V V I I i Ti Ti V V I I I II Ti I i i I i µ D I ?

5.8. fmmt4402_fmmt4403.pdf Size:30K _diodes

SOT23 PNP SILICON PLANAR 402 FMMT4402 GENERAL PURPOSE TRANSISTOR 403 FMMT4403 ISSUE 2 - MARCH 1995 E T I D T I T C T V B ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V i II I Di i i T ° i T T T ° ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) T T T I I IT DITI II i V V I I V I II V V I I V I i V V I I II i I µ V V V V I µ V V V V i I V V I V V T i I V V I V V I V V II i V V I I i V I V I I i V V I I i V I V I I T i i I V V T i 8 8 V V I I i i V V I I i i I i µ D I ? FMMT4402 FMMT4403 SWITCHING CHARACTERISTICS (at Tamb= 25°C ) T I IT DITI T Ti V V V V I I i T Ti V V I I I i

5.9. fmmt4126.pdf Size:27K _diodes

SOT SI I O A A T 6 S IT HI T A SISTO ISS A H T I D T I A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V i II I Di i i T ° i T T T ° T I A HA A T ISTI S a Ta T I IT DITI II V V I µ V I II i V V I V I i V V I µ V I II I V V i I V V II i V V I I i V I i V V I I i V I i I V V T i I V V T i i T I V V i V V I I i V V I i i i I µ V V ? i II i I 8 I V V T S IT HI HA A T ISTI S a Ta T T IT DITI D I Ti V V V V I I i Ti 8 Ti V V I I I II Ti I i i I i µ D I ?

5.10. fmmt491a.pdf Size:130K _diodes

SOT SI I O A A T A DI O T A SISTO ISS O TO T V i I i ? a A a T T T T I D T I A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V i II I I I Di i i T ° i T T T ° T I A HA A T ISTI S a Ta T I IT DITI II V V I µ V I II i V V I V I i V V I µ V I I I V V V V i I V V i V I V V I I V I I V V I I i T V I V V I V V i I V V V T i I V V V I V V I V V T i i I V V T II V V V I I i i I i µ D I ? i i iI I i i  T A TYPICAL CHARACTERISTICS ° I II I II I I 8 8 I II I II h I I 8 V V V V I II V II i V I V Sa O a in A a I 8

5.11. fmmt491.pdf Size:318K _diodes

FMMT491 Medium power NPN transistor in SOT23 Summary BVCEO > 60V BVEBO > 7V IC(cont) = 1A PD = 500mW RCE(sat) = 160m at 1A Complementary part number : FMMT591 Description C Medium power planar NPN bipolar transistor. Features B • VCE(sat) maximum specification improvement • Reverse blocking specification improvement E Applications E • MOSFET gate driving • Power switches C • Motor control B Ordering information Pinout - top view Device Reel size Tape width Quantity (inches) (mm) per reel FMMT491TA 7 8 3000 Device marking 491 Issue 5 - November 2007 1 www.zetex.com © Zetex Semiconductors plc 2007 FMMT491 Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCE0 60 V Emitter-base voltage VEBO 7V IC 1A Continuous collector current(a) Peak pulse current ICM 2A PD 500 mW Power dissipation at TA =25°C(a) Linear derating factor 4 mW/°C Operating and storage temperature range Tj, Tstg -55

5.12. fmmt4125.pdf Size:27K _diodes

SOT SI I O A A T S IT HI T A SISTO ISS A H T I D T I D A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V i II I Di i i T ° i T T T ° T I A HA A T ISTI S a Ta T I IT DITI II V V I µ V I II i V V I V I i V V I µ V I II I V V i I V V II i V V I I i V I i V V I I i V I i I V V T i I V V T i i T I V V i V V I I i V V I i i i I µ V V ? i II i I I V V T S IT HI HA A T ISTI S a Ta T T IT DITI D I Ti V V V V I I i Ti 8 Ti V V I I I II Ti I i i I i µ D I ?

5.13. fmmt493.pdf Size:138K _diodes

SOT SI I O A A T DI O T A SISTO ISS O T T T T I D T I SOT A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V i II I I I I Di i i T ° i T T T ° T I A HA A T ISTI S a Ta T I IT DITI V I V V I µ V V I V V I µ II I V V II I V V i I V V i V I V V I I V I I V V I I i V V I V V T V I i I V V T i I V V I V V I V V ) T i i I V V T II V V V I I i i I i µ D I ?  T TYPICAL CHARACTERISTICS I -Collector Current I -Collector Current VCE(sat) v IC VCE(sat) v IC I -Collector Current I -Collector Current hFE V IC VBE(sat) v IC µ I -Collector Current V - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area V -(V) V -(V) V - (V) h - Typical Gain V - (V) I -Collector Current (A)

5.14. fmmt459.pdf Size:190K _diodes

FMMT459 500V Silicon NPN high voltage switching transistor Summary V(BR)CEV > 500V V(BR)ECV > 6V Ic(cont) = 150 mA Vce(sat) = 70 mV @ 50 mA Description This new high voltage transistor provides users with very efficient performance, combining low VCE(SAT) high Hfe to give extremely low on state losses at 500V operation, making it ideal for use in high efficiency Telecom and protected line switching applications. Features ¦ 6V reverse blocking capability ¦ Low saturation voltage - 90mV @ 50mA ¦ Hfe 50 @ 30 mA ¦ IC=150mA continuous ¦ SOT23 package with Ptot 625mW ¦ Specification can be supplied in other package outlines Applications ¦ Electronic test equipment ¦ Offline switching circuits ¦ Piezo actuators ¦ RCD circuits Ordering information Pin out - top view Device Reel size Tape width Quantity (inches) (mm) per reel FMMT459TA 7 8 3,000 FMMT459TC 13 8 10,000 Device marking 459 Issue 5 - August 2005 1 www.zetex.com © Zetex Semiconductors plc 2005 F

5.15. fmmt4124.pdf Size:27K _diodes

SOT SI I O A A T S IT HI T A SISTO ISS A H T I D T I A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V i II I Di i i T ° i T T T ° T I A HA A T ISTI S a Ta T I IT DITI II V V I µ V I II i V V I V I i V V I µ V I II I V V i I V V II i V V I I i V I i V V I I i V I i I V V T i I V V T i i T I V V i V V I I i 8 V V I i i i I µ V V ? i II i I 8 I V V T S IT HI HA A T ISTI S a Ta T T IT DITI D I Ti V V V V I I i Ti Ti V V I I I II Ti I i i I i µ D I ?

5.16. fmmt493a.pdf Size:140K _diodes

FMMT493A SOT23 60V NPN SILICON PLANAR MEDIUM POWER PLANAR TRANSISTOR NPN: VCEO = 60V, IC = 1A, VCE(SAT) = 0.5V @1A E C Description: This 60V NPN transistor provides users with B performance combining low saturation and high hFE with a continuous current capability of 1A, ensuring SOT23 improved circuit efficiencies. Features Low saturation voltage High hFE min 300 @ 250mA IC = 1A Applications Various driving functions including:- - Motors - Actuators - Soleniod & Relays Backlight Inverters. DC_DC Modules. E Device Reel Size Tape Width Quantity C (inches) (mm) Per Reel FMMT493ATA 7 8mm embossed 3000 units B FMMT493ATC 13 8mm embossed 10000 units TOP VIEW ISSUE 2 - AUGUST 2003 1 SEMICONDUCTORS FMMT493A ELECTRICAL CHARACTERISTICS (at Tamb = 25 C). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Collector - Base V(BR)CBO 120 V IC = 100 A Breakdown Voltage Collector - Emitter VCEO(SUS) 60 V IC = 10mA* Breakdown Voltage Emitter - Base V(BR)EBO 5V IE

5.17. fmmt495.pdf Size:121K _diodes

SOT SI I O A A DI T O HI H O A T A SISTO ISS O T I D T I A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V i II I I I I Di i i T ° i T T T ° T I A HA A T ISTI S a Ta T I IT DITI V I V V I µ V V I V V I µ II I V V I V V i I V V II i V V I I i V I V I I i V V I I i V I i V V I V V T V I i I V V T i I V V I V V I V V T i i I V V T II V V V I I i i I i µ D I ?  T TYPICAL CHARACTERISTICS I II I II a I a I I II I II h I a I µ I II V II i V I V on I Sa O a in A a

5.18. fmmt491.pdf Size:613K _htsemi

FMMT491 TRANSISTOR (NPN) SOT-23 FEATURES Low equivalent on-resistance 1. BASE 2. EMITTER 3. COLLECTOR Marking :491 MAXIMUM RATINGS(TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 250 mW Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100?A,IE=0 80 V Collector-emitter breakdown voltage V(BR)CEO1 IC=10mA,IB=0 60 V Emitter-base breakdown voltage V(BR)EBO IE=100?A,IC=0 5 V Collector cut-off current ICBO VCB=60V,IE=0 0.1 ?A Emitter cut-off current IEBO VEB=4V,IC=0 0.1 ?A hFE(1) VCE=5V,IC=1mA 100 hFE(2) 1 VCE=5V,IC=500mA 100 300 DC current gain hFE(3) 1 VCE=5V,IC=1A 80 hFE(4) 1 VCE=5V,IC=2A

5.19. fmmt449.pdf Size:359K _htsemi

FMMT449 TRANSISTOR (NPN) SOT–23 FEATURES ? Low Equivalent On-Resistance MARKING: 449 MAXIMUM RATINGS (Ta=25? unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 50 V CBO 3. COLLECTOR V Collector-Emitter Voltage 30 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 1 A C PC Collector Power Dissipation 200 mW R Thermal Resistance From Junction To Ambient 625 ?/W ?JA T Junction Temperature 150 ? j T Storage Temperature -55~+150 ? stg ELECTRICAL CHARACTERISTICS (Ta=25? unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=1mA, IE=0 50 V Collector-emitter breakdown voltage V I =10mA, I =0 30 V (BR)CEO C B Emitter-base breakdown voltage V I =100µA, I =0 5 V (BR)EBO E C Collector cut-off current I V =40V, I =0 0.1 µA CBO CB E Emitter cut-off current I V =4V, I =0 0.1 µA EBO EB C h * V =2V, I =50mA 70 FE(1

5.20. fmmt493.pdf Size:387K _htsemi

FMMT493 TRANSISTOR (NPN) SOT–23 FEATURES ? Complementary Type FMMT593 MARKING:493 MAXIMUM RATINGS (Ta=25? unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 120 V CBO 3. COLLECTOR V Collector-Emitter Voltage 100 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 1000 mA C PC Collector Power Dissipation 250 mW R Thermal Resistance From Junction To Ambient 500 ?/W ?JA T Junction Temperature 150 ? j T Storage Temperature -55~+150 ? stg ELECTRICAL CHARACTERISTICS (Ta=25? unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA, IE=0 120 V Collector-emitter breakdown voltage V I =10mA, I =0 100 V (BR)CEO C B Emitter-base breakdown voltage V I =100µA, I =0 5 V (BR)EBO E C Collector cut-off current I V =100V, I =0 0.1 µA CBO CB E Collector cut-off current I V =100V, I =0 0.1 µA CES CES E Emitter cut-of

5.21. fmmt4124.pdf Size:386K _htsemi

FMMT4124 TRANSISTOR (NPN) SOT–23 FEATURES ? Switching Application MARKING:ZC 1. BASE MAXIMUM RATINGS (Ta=25? unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 25 V CEO V Emitter-Base Voltage 5 V EBO IC Collector Current 200 mA PC Collector Power Dissipation 330 mW R Thermal Resistance From Junction To Ambient 378 ?/W ?JA T Junction Temperature 150 ? j T Storage Temperature -55~+150 ? stg ELECTRICAL CHARACTERISTICS (Ta=25? unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=10µA, IE=0 30 V Collector-emitter breakdown voltage V * I =1mA, I =0 25 V (BR)CEO C B Emitter-base breakdown voltage V I =10µA, I =0 5 V (BR)EBO E C Collector cut-off current I V =20V, I =0 50 nA CBO CB E Emitter cut-off current I V =3V, I =0 50 nA EBO EB C hFE(1) * VCE=1V, IC=2mA 120 360 DC c

5.22. fmmt491.pdf Size:199K _lge

FMMT491 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Low equivalent on-resistance Marking :491 MAXIMUM RATINGS(TA=25? unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 500 mW Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100?A,IE=0 80 V Collector-emitter breakdown voltage V(BR)CEO1 IC=10mA,IB=0 60 V Emitter-base breakdown voltage V(BR)EBO IE=100?A,IC=0 5 V Collector cut-off current ICBO VCB=60V,IE=0 0.1 ?A Emitter cut-off current IEBO VEB=4V,IC=0 0.1 ?A hFE(1) VCE=5V,IC=1mA 100 hFE(2) 1 VCE=5V,IC=500mA 100 300 DC current gain hFE

5.23. fmmt491.pdf Size:379K _wietron

FMMT491 COLLECTOR 3 General Purpose Transistor NPN Silicon 3 P b Lead(Pb)-Free 1 1 BASE 2 SOT-23 2 EMITTER Maximum Ratings Rating Symbol Value Unit Collector-Base Breakdown Voltage V(BR)CEO 60 V Collector-Emitter Breakdown Voltage V(BR)CBO 80 V Emitter-Base Breakdown Voltage V(BR)EBO V 5.0 Collector Current IC A 1.0 Peak Pulse Current ICm A 2.0 Power Dissipation PD mW 250 TA=25°C Junction Temperature Range TJ °C +150 TSTG °C Storage Temperature Range -55 to +150 Device Marking FMMT491=491 Electrical Characteristics (TA=25?C Unless Otherwise noted) Characteristics Symbol Min Typ Max Unit Off Characteristics Collent-Emitter Breakdown Voltage1 V V(BR)CEO 60 - - IC = 10mA, IB = 0 Collent-Base Breakdown Voltage V(BR)CBO 80 - - V IC = 100µA, IE = 0 V(BR)EBO - V 5.0 - IC = 0, IE = 100µA µA 0.1 - - ICBO VCB = 60V, I = 0 E IEBO 0.1 µA - - VEB = 4.0V, IC = 0 WEITRON 20-Jun-2012 1/4 http://www.weitron.com.tw F

See also transistors datasheet: FMMT4402 , FMMT4403 , FMMT449 , FMMT451 , FMMT455 , FMMT458 , FMMT4888 , FMMT4889 , P605 , FMMT4890 , FMMT491 , FMMT4916 , FMMT4917 , FMMT491A , FMMT493 , FMMT494 , FMMT495 .

Keywords