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FMMT5401 Transistor Datasheet. Parameters and Characteristics.

Type Designator: FMMT5401

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.2

Maximum collector-base voltage |Ucb|, V: 160

Maximum collector-emitter voltage |Uce|, V: 150

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.6

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 100

Collector capacitance (Cc), pF: 10

Forward current transfer ratio (hFE), min: 60

Noise Figure, dB: -

Package of FMMT5401 transistor: SOT23

FMMT5401 Equivalent Transistors - Cross-Reference Search

FMMT5401 PDF doc:

1.1. fmmt5400_fmmt5401.pdf Size:26K _diodes

SOT SI I O A A T 00 HI H O TA T A SISTO S T 0 ISS O 6 T I D T I T T T T T T T T A SO T A I ATI S T T T IT II V I V V II i V I V V i V I V V i II I Di i i T ° i T T T ° T I A HA A T ISTI S a Ta T T T I I IT DITI II V V I µ V I II i V V I V I i V V I µ V I II I V V µ V V T ° V V V V T ° µ i I V V T 8 I V V i I V V II i V V I I i V I V I I i V V I I i V I V I I T i i I V V T i V V II i I I V V i i 8 8 I µ V V ? i i I T I

4.1. fmmt549.pdf Size:135K _fairchild_semi

August 2009 FMMT549 PNP Low Saturation Transistor Features • ThIs device is designed with high current gain and low saturation voltage with collector currents up to 2A continuous. • Sourced from process PB. 3 2 SuperSOT-23 1 Marking : 549 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Unit VCEO Collector-Emitter Voltage -30 V VCBO Collector-Base Voltage -35 V VEBO Emitter-Base Voltage -5 V IC Collector Current - Continuous -1 A - Peak Pulse Current -2 A TJ Junction Temperature 150 °C TSTG Storage Temperature Range -55 to +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1)These ratings are based on a maximum junction temperature of 150 degrees C. 2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Thermal Characteristics* Symbol Parameter V

5.1. fmmt558.pdf Size:121K _diodes

SOT SI I O A A T 8 HI H O TA T A SISTO ISS A A Y 6 T II i i I i I T T T 8 T I D T I 8 A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V I I i II I I Di i i i T T T ° T I A HA A T ISTI S a Ta T I IT DITI II V V I µ V I II i V V I V I i V I V V I µ II I I V V V V i I V V V II i i V V I I V I V I I i V V I I i V I i T V I V V I V V i T I V V i I V V I V V T i i I V V T II V V V V I i i i I V V I I I i i I i µ D I ? i i iI I i i  T 8 TYPICAL CHARACTERISTICS I - II I - II VCE(sat) v IC VCE(sat) v IC I - II I - II hFE v IC VBE(sat) v IC µ V V V V I - II V II i V I V VBE(on) v IC Sa O a in A a V - (Volts) V - (Volts) h - Typical Gain V - (Volts) h - Normalised Gain V - (Volts)

5.2. fmmt591.pdf Size:292K _diodes

FMMT591 Medium power PNP transistor in SOT23 Summary BVCEO > -60V BVEBO > -7V IC(cont) = -1A PD = 500mW RCE(sat) = 295m at 1A Complementary part number : FMMT491 Description C Medium power planar PNP bipolar transistor. Features B • VCE(sat) maximum specification reduction • Reverse blocking specification improvement E Applications E • MOSFET gate driving • Power switches C • Motor control B Ordering information Pinout - top view Device Reel size Tape width Quantity (inches) (mm) per reel FMMT591TA 7 8 3000 Device marking 591 Issue 4 - September 2007 1 www.zetex.com © Zetex Semiconductors plc 2007 FMMT591 Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -60 V Emitter-base voltage VEBO -7 V IC -1 A Continuous collector current(a) Peak pulse current ICM -2 A PD 500 mW Power dissipation at TA =25°C(a) Linear derating factor 4 mW/°C Operating and storage temperature range Tj

5.3. fmmt5088_fmmt5089.pdf Size:27K _diodes

SOT SI I O A A T 088 S A SI A T A SISTO S T 08 ISS S T T I D T I T 88 T 8 T T T 88 T 8 T 8 iI I A SO T A I ATI S T T 88 T 8 IT II V I V V II i V I V V i V I V V i II I Di i i T ° i T T T ° T I A HA A T ISTI S a Ta T 88 T 8 T I I IT DITI II V V I I V I II i V V I µ I V I II I V V I V V I i I V V I V V I i i V V V I I I V 8 8 V i I µ V V T I V V i I V V T i i I µ V V T i V V I i V V i I i i I V V ? II i I 8 I V V T i I i i I i µ D I ? i i I I i i iI I i i

5.4. fmmt560.pdf Size:480K _diodes

A Product Line of Diodes Incorporated FMMT560 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR Features Mechanical Data • Excellent hFE Characteristics up to IC = 50mA • Case: SOT-23 • Case Material: Molded Plastic, “Green” Molding Compound. • Low Saturation Voltages UL Flammability Classification Rating 94V-0 • Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) • Moisture Sensitivity: Level 1 per J-STD-020D • "Green" Device (Note 2) • Terminals: Matte Tin Finish annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 • Terminal Connections: See Diagram • Marking Information: See Page 3 • Ordering Information: See Page 3 • Weight: 0.008 grams (approximate) C C B B E E Top View Pin Configuration Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -500 V Collector-Emitter Voltage VCEO -500 V Emitter-Base Voltage VEBO -5 V Continuous Collector Curre

5.5. fmmt5550_fmmt5551.pdf Size:27K _diodes

SOT SI I O A A T 0 HI H O TA T A SISTO S T ISS O 6 T I D T I T T T T T T T T A SO T A I ATI S T T T IT II V I V 8 V II i V I V V i V I V V i II I Di i i T ° i T T T ° T I A HA A T ISTI S a Ta T T T I I IT DITI II V 8 V I µ V I II i V V I V I i V V I µ V I II I V V µ V V T ° V V V V T ° µ i 8 I V V T 8 I V V i I V V II i V V I I i V I V I I i V V I I i V I V I I T i i I V V T i V V II i I I V V i i 8 I µ V V ? i i I T I

5.6. fmmt555.pdf Size:65K _diodes

SOT23 PNP SILICON PLANAR FMMT555 MEDIUM POWER TRANSISTOR ISSUE 4 – AUGUST 2003 FEATURES * 150 Volt VCEO * 1 Amp continuous current E C =IB2=IC/10 COMPLEMENTARY TYPE – FMMT455 tf ns B 1000 PARTMARKING DETAIL – 555 800 600 td ns SOT23 ABSOLUTE MAXIMUM RATINGS. 400 100 PARAMETER SYMBOL VALUE UNIT 200 50 0 0 Collector-Base Voltage VCBO -160 V -1 Collector-Emitter Voltage VCEO -150 V ps) Emitter-Base Voltage VEBO -5 V s Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Base Current IB -200 mA Power Dissipation at Tamb = 25°C Ptot 500 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. MAX UNIT CONDITIONS. Collector-Base V(BR)CBO -160 V IC=-100 A Breakdown Voltage Collector-Emitter V(BR)CEO -150 V IC=-10mA* -0.1 -1 Breakdown Voltage ps) Emitter-Base V(BR)EBO -5 V IE=-100 A Breakdown Voltage Collector Cut-Off Current ICBO -0.1

5.7. fmmt5209_fmmt5210.pdf Size:27K _diodes

SOT23 NPN SILICON PLANAR FMMT5209 SMALL SIGNAL TRANSISTORS FMMT5210 ISSUE 2 - JULY 1995 T I D T I T E C T B SOT23 ABSOLUTE MAXIMUM RATINGS. T T T IT II V I V V II i V I V V i V I V V i II I Di i i i T T T T ° ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). T T T IT DITI I I II I V V I i I V V I II i V V I I i V I i V 8 8 V I V V V I i I µ V V T I V V i I V V T i i T I V V II i I I V V T i i i I µ V V ? i I µ V V ? ? i V V I

5.8. fmmt591a.pdf Size:149K _diodes

A Product Line of Diodes Incorporated FMMT591A SOT23 PNP silicon planar medium power transistor Features Low equivalent on resistance RCE(sat) = 350m at 1A Part Marking Detail -91A Complementary type -FMMT491A Absolute maximum ratings. Parameter Symbol Value Unit Collector-Base voltage VCBO -40 V Collector-Emitter voltage VCEO -40 V Emitter-Base voltage VEBO -5 V Peak pulse current ICM -2 A Continuous Collector current IC -1 A Base current IB -200 mA Power dissipation at Tamb=25oC Ptot 500 mW Operating an storage temperature range Tj ; TSTG -55 to +150 °C Electrical characteristics (at Tamb = 25°C) Parameter Symbol Min Max Unit Conditions Collector-Base breakdown voltage V(BR)CBO -40 V IC=-100 A Collector-Emitter breakdown voltage V(BR)CEO -40 V IC=-10mA (*) Emitter-Base breakdown voltage V(BR)EBO -5 V IE=-100 A Collector cut-off current ICBO -100 nA VCB=-30V Emitter cut-off current IEBO -100 nA VEB=-4V Collector-Emitter cut-off current ICES -100 n

5.9. fmmt5087.pdf Size:26K _diodes

SOT SI I O A A T 08 S A SI A T A SISTO T I D T I T 8 T 8 T T T 88 A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V i II I Di i i T ° i T T T ° T I A HA A T ISTI S a Ta T I IT DITI II I V V I µ V V I i I V V I II i V V I I i V I i V 8 V I V V V I i 8 I µ V V T I V V i I V V T i i I µ V V T II i I I V V T i i i I µ V V ? i i V V I I i i I i µ D I ? i i iI I i i

5.10. fmmt593.pdf Size:119K _diodes

SOT SI I O A A T HI H O TA T A SISTO ISS O T T T T I D T I A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V I I i II I I Di i i T ° i T T T ° T I A HA A T ISTI S a Ta T I IT DITI II V I V V I µ II i V I V V I i V I V V I µ II I V V i I V V II i I V V i i V V I I V I V I I V V I I i T V I V V I V V i T i I V V I V V I V V I V V V T i i I V V T V i V V I i i I i µ D I ?  T TYPICAL CHARACTERISTICS I II I II a I a I 8 I II I II h I a I 8 µ V V V V V II i V I V I II on I Sa O a in A a

5.11. fmmt591.pdf Size:429K _htsemi

FMMT591 TRANSISTOR (PNP) SOT-23 FEATURES Low equivalent on-resistance 1. BASE 2. EMITTER Marking :591 3. COLLECTOR MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1 A PC Collector Power Dissipation 500 mW Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO V IC=-100?A, IE=0 -80 V Collector-emitter breakdown voltage V(BR)CEO1 IC=-10mA, IB=0 -60 Emitter-base breakdown voltage V(BR)EBO V IE=-100?A, IC=0 -5 Collector cut-off current ICBO ?A VCB=-60V, IE=0 -0.1 Emitter cut-off current IEBO ?A VEB=-4V, IC=0 -0.1 hFE(1) VCE=-5V, IC=-1mA 100 hFE(2) 1 VCE=-5V, IC=-500mA 100 300 DC current gain hFE(3) 1

5.12. fmmt593.pdf Size:442K _htsemi

FMMT593 TRANSISTOR (PNP) SOT–23 FEATURES ? Complementary Type FMMT493 MARKING:593 1. BASE MAXIMUM RATINGS (Ta=25? unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage -120 V CBO V Collector-Emitter Voltage -100 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -1 A C PC Collector Power Dissipation 250 mW R Thermal Resistance From Junction To Ambient 500 ?/W ?JA T Junction Temperature 150 ? j T Storage Temperature -55~+150 ? stg ELECTRICAL CHARACTERISTICS (Ta=25? unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100µA, IE=0 -120 V Collector-emitter breakdown voltage V I =-10mA, I =0 -100 V (BR)CEO C B Emitter-base breakdown voltage V I =-100µA, I =0 -5 V (BR)EBO E C Collector cut-off current I V =-100V, I =0 -0.1 µA CBO CB E Collector cut-off current I V =-100V, I =0 -0.1 µA CES CES E Emitt

5.13. fmmt591.pdf Size:187K _lge

FMMT591 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Low equivalent on-resistance Marking :591 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1 A PC Collector Power Dissipation 500 mW Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO V IC=-100?A, IE=0 -80 V Collector-emitter breakdown voltage V(BR)CEO1 IC=-10mA, IB=0 -60 Emitter-base breakdown voltage V(BR)EBO V IE=-100?A, IC=0 -5 Collector cut-off current ICBO ?A VCB=-60V, IE=0 -0.1 Emitter cut-off current IEBO ?A VEB=-4V, IC=0 -0.1 hFE(1) VCE=-5V, IC=-1mA 100 hFE(2) 1 VCE=-5V, IC

5.14. fmmt591.pdf Size:219K _wietron

FMMT591 COLLECTOR 3 General Purpose Transistor PNP Silicon 3 P b Lead(Pb)-Free 1 1 BASE 2 SOT-23 2 EMITTER Maximum Ratings Rating Symbol Value Unit Collector-Base Breakdown Voltage V(BR)CEO -60 V Collector-Emitter Breakdown Voltage V(BR)CBO -80 V Emitter-Base Breakdown Voltage V(BR)EBO V -5.0 Collector Current IC A -1.0 Peak Pulse Current ICm A -2.0 Power Dissipation PD mW 250 TA=25°C Junction Temperature Range TJ °C +150 TSTG °C Storage Temperature Range -55 to +150 Device Marking FMMT591=591 Electrical Characteristics (TA=25?C Unless Otherwise noted) Characteristics Symbol Min Typ Max Unit Off Characteristics Collent-Emitter Breakdown Voltage1 V V(BR)CEO -60 - - IC = -1.0mA, IB = 0 Collent-Base Breakdown Voltage V(BR)CBO -80 - - V IC = -100µA, IE = 0 - V V(BR)EBO -5.0 - IC = 0, IE = -100µA µA -0.1 - - ICBO VCB = -60V, IE = 0 IEBO -0.1 µA - - VEB = -4.0V, IC = 0 WEITRON 20-Jun-2012 1/4 http://www.weitron.com.t

5.15. fmmt593.pdf Size:267K _wietron

FMMT593 COLLECTOR 3 General Purpose Transistor PNP Silicon 3 P b Lead(Pb)-Free 1 1 BASE 2 SOT-23 2 EMITTER Maximum Ratings Rating Symbol Value Unit Collector-Base Breakdown Voltage V(BR)CEO -120 V Collector-Emitter Breakdown Voltage V(BR)CBO -100 V Emitter-Base Breakdown Voltage V(BR)EBO V -5.0 Collector Current IC A -1.0 Power Dissipation PD mW 250 TA=25°C Junction Temperature Range TJ °C +150 TSTG °C Storage Temperature Range -55 to +150 Device Marking FMMT593=593 Electrical Characteristics (TA=25?C Unless Otherwise noted) Characteristics Symbol Min Typ Max Unit Off Characteristics Collent-Emitter Breakdown Voltage1 V V(BR)CEO -100 - - IC = -10mA, IB = 0 Collent-Base Breakdown Voltage V(BR)CBO -120 - - V IC = -100µA, IE = 0 - V V(BR)EBO -5.0 - IC = 0, IE = -100µA µA -0.1 - - ICBO VCB = -100V, IE = 0 IEBO -0.1 µA - - VEB = -4V, IC = 0 WEITRON 06-May-10 1/4 http://www.weitron.com.tw FMMT593 Electrical Character

See also transistors datasheet: FMMT5142 , FMMT5143 , FMMT5172 , FMMT5179 , FMMT5209 , FMMT5210 , FMMT5400 , FMMT5400R , 2N2219A , FMMT5401R , FMMT5447 , FMMT5449 , FMMT549 , FMMT549A , FMMT551 , FMMT555 , FMMT5550 .

Keywords