FN1F4M Transistor Datasheet. Parameters and Characteristics.

Type Designator: FN1F4M

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.2

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 50

Maximum emitter-base voltage |Ueb|, V: 10

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C: 175

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 60

Noise Figure, dB: -

Package of FN1F4M transistor: SOT23

FN1F4M Equivalent Transistors - Cross-Reference Search

FN1F4M PDF document for downloads:

PDF unavailable!

See also transistors datasheet: FMY3A , FMY4A , FMY5 , FMY6 , FN1A3Q , FN1A4M , FN1A4P , FN1A4Z , TIP31C , FN1F4N , FN1F4Z , FN1L3M , FN1L3N , FN1L3Z , FN1L4L , FN1L4M , FN1L4Z .

Keywords