FT3055 Transistor Datasheet. Parameters and Characteristics.

Type Designator: FT3055

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 117

Maximum collector-base voltage |Ucb|, V: 100

Maximum collector-emitter voltage |Uce|, V: 70

Maximum emitter-base voltage |Ueb|, V: 7

Maximum collector current |Ic max|, A: 15

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 0.2

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of FT3055 transistor: TO3

FT3055 Equivalent Transistors - Cross-Reference Search

FT3055 PDF document for downloads:

1.1. mmft3055v_.pdf Size:224K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMFT3055V/D Designer's? Data Sheet MMFT3055V TMOS V? SOT-223 for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET TM TMOS V is a new technology designed to achieve an on–resis- 1.7 AMPERES tance area product about one–half that of standard MOSFETs. This 60 VOLTS new technology more than doubles the present cell density of our RDS(on) = 0.130 OHM 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high D speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for 4 bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against G 1 unexpected voltage transients. 2 3 New Features of TMOS V S • On–resistance Area Product ab

1.2. mmft3055el.pdf Size:236K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMFT3055EL/D Medium Power Field Effect Transistor MMFT3055EL N–Channel Enhancement Mode Motorola Preferred Device Silicon Gate TMOS E–FETt SOT–223 for Surface Mount MEDIUM POWER This advanced E–FET is a TMOS power MOSFET designed to LOGIC LEVEL TMOS FET withstand high energy in the avalanche and commutation modes. 1.5 AMP This device is also designed with a low threshold voltage so it is 60 VOLTS fully enhanced with 5 Volts. This new energy efficient device also RDS(on) = 0.18 OHM offers a drain–to–source diode with a fast recovery time. Designed ? for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and 2,4 commutating safe operating areas are critical and offer additional D 4 safety margin against unexpected voltage transients. The device is housed in the SOT–223 pa

1.3. mmft3055vl.pdf Size:224K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMFT3055VL/D Designer's? Data Sheet MMFT3055VL TMOS V? SOT-223 for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET TM TMOS V is a new technology designed to achieve an on–resis- 1.5 AMPERES tance area product about one–half that of standard MOSFETs. This 60 VOLTS new technology more than doubles the present cell density of our RDS(on) = 0.140 OHM 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high D speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for 4 bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against G 1 unexpected voltage transients. 2 3 New Features of TMOS V S • On–resistance Area Product

1.4. mmft3055e.pdf Size:238K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMFT3055E/D Medium Power Field Effect Transistor MMFT3055E N–Channel Enhancement Mode Motorola Preferred Device Silicon Gate TMOS E–FETt SOT–223 for Surface Mount MEDIUM POWER This advanced E–FET is a TMOS Medium Power MOSFET TMOS FET designed to withstand high energy in the avalanche and commuta- 1.7 AMP tion modes. This new energy efficient device also offers a 60 VOLTS drain–to–source diode with a fast recovery time. Designed for low RDS(on) = 0.15 OHM voltage, high speed switching applications in power supplies, ? dc–dc converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional 2,4 safety margin against unexpected voltage transients. The device is D 4 housed in the SOT–223 package which is designed for medium power surface mount applications. 1 2 • Silicon Gate for

1.5. mmft3055v.pdf Size:91K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMFT3055V/D Product Preview MMFT3055V TMOS V? SOT-223 for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET TM TMOS V is a new technology designed to achieve an on–resis- 1.7 AMPERES tance area product about one–half that of standard MOSFETs. This 60 VOLTS new technology more than doubles the present cell density of our RDS(on) = 0.130 OHM 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high D speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for 4 bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against G 1 unexpected voltage transients. 2 3 New Features of TMOS V S • On–resistance Area Product about One

See also transistors datasheet: FT2384 , FT2551 , FT2955 , FT2974 , FT2975 , FT2978 , FT2979 , FT2995 , BC549 , FT317 , FT317A , FT317B , FT34A , FT34B , FT34C , FT34D , FT3567 .

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