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2N3711 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N3711

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.36

Maximum collector-base voltage |Ucb|, V: 30

Maximum collector-emitter voltage |Uce|, V: 30

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 0.03

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 100

Collector capacitance (Cc), pF: 11

Forward current transfer ratio (hFE), min: 180

Noise Figure, dB: -

Package of 2N3711 transistor: TO92

2N3711 Equivalent Transistors - Cross-Reference Search

2N3711 PDF document for downloads:

1.1. 2n3707_2n3708_2n3709_2n3710_2n3711.pdf Size:82K _central

TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com

5.1. 2n371.pdf Size:162K _rca

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5.2. 2n3715_2n3716.pdf Size:272K _motorola

Order this document MOTOROLA by 2N3715/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3715 Silicon NPN Power Transistors 2N3716 . . . designed for medium–speed switching and amplifier applications. These devices feature: • Total Switching Time at 3 A typically 1.15 µs 10 AMPERE • Gain Ranges Specified at 1 A and 3 A POWER TRANSISTORS • Low VCE(sat): typically 0.5 V at IC = 5 A and IB = 0.5 A SILICON NPN • Excellent Safe Operating Areas 60–80 VOLTS • Complement to 2N3791–92 150 WATTS CASE 1–07 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII TO–204AA IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIII IIII IIIIII IIIIII (TO–3) IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIII IIII IIIIIIIIIIIIIIII IIIIII IIII IIIIII IIIIII IIIIII IIIIII MAXIMUM RATINGS IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIII IIII IIIIIIIIIIIIIIII IIIIII IIII IIIIIIIIIIIIIIII IIIIII IIII IIIIII IIIIII IIIIII IIIIII IIIIII IIIIII Rating Symbol 2N3715 2N3716 Unit IIIIIIII

5.3. 2n3713_2n3714_2n3715_2n3716.pdf Size:88K _central

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

5.4. 2n3713-2n3714-2n3715-2n3716-2n3789-2n3790-2n3791-2n3792.pdf Size:172K _comset

2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP types are 2N3789, 2N3790, 2N3791 and 2N3792 respectively. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit 2N3789 2N3791 80 2N3713 2N3715 VCBO Collector-BaseVoltage IE = 0 V 2N3790 2N3792 100 2N3714 2N3716 2N3789 2N3791 60 2N3713 2N3715 VCEO Collector-Emitter Voltage IB = 0 V 2N3790 2N3792 80 2N3714 2N3716 2N3789 2N3790 2N3791 2N3792 VEBO Emitter-Base Voltage IC = 0 7.0 V 2N3713 2N3714 2N3715 2N3716 COMSET SEMICONDUCTORS 1/5 2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP Symbol Ratings Value Unit 2N3789 2N3790 2N3791 2N3792 Collector Current IC 10 A 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 IB Base Cu

5.5. 2n3713-16.pdf Size:125K _mospec

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5.6. 2n3707-09_2n3710-11_2n4058-59_2n4060-62.pdf Size:137K _microelectronics

5.7. 2n3719.pdf Size:55K _microsemi

7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N3719 APPLICATIONS: • High-Speed Switching • Medium-Current Switching • High-Frequency Amplifiers FEATURES: • Collector-Emitter Sustaining Voltage: Silicon PNP VCEO(SUS) = 40 Vdc (Min) - 2N3719 Power Transistors • DC Current Gain: hFE = 25-180 @ IC = 1.0 Adc • Low Collector-Emitter Saturation Voltage: VCE(sat) = 0.75 Vdc @ I = 1.0 Adc C • High Current-Gain - Bandwidth Product: fT = 90 MHz (Typ) DESCRIPTION: DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques

5.8. 2n3716.pdf Size:116K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3716 DESCRIPTION Ў¤ With TO-3 package APPLICATIONS Ў¤ They are intended for use in power linear and switching applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg I E SEM HANG NC Collector-emitter voltage Emitter-base voltage Collector current Base current Total Power Dissipation Junction temperature Storage temperature TC=25Ўж Collector-base voltage PARAMETER Open emitter Open base OND IC CONDITIONS CTOR U VALUE 100 80 7 10 4 150 200 -65~200 UNIT V V V A A W Ўж Ўж Open collector THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT Ўж /W

5.9. 2n3715_3716.pdf Size:38K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N3715/3716 DESCRIPTION ·DC Current Gain- : hFE= 50-150@IC= 1A ·Wide Area of Safe Operation ·Low Collector Saturation Voltage- : VCE(sat)= 0.8V(Max.)@ IC= 5A ·Complement to Type 2N3791/3792 APPLICATIONS ·Designed for medium-speed switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT 2N3715 80 V Collector-Base Voltage V CBO 2N3716 100 2N3715 60 V Collector-Emitter Voltage V CEO 2N3716 80 V Emitter-Base Voltage 7 V EBO I Collector Current-Continuous 10 A C I Base Current 4 A B P Collector Power Dissipation@T =25? 150 W C C T Junction Temperature 200 ? J Tstg Storage Temperature -65~200 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.17 ?/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Powe

See also transistors datasheet: 2N3704 , 2N3705 , 2N3706 , 2N3707 , 2N3708 , 2N3709 , 2N371 , 2N3710 , BC137 , 2N3712 , 2N3712S , 2N3713 , 2N371-33 , 2N3713HS , 2N3713-SM , 2N3714 , 2N3714HS .

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