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FXT649SM Transistor Datasheet. Parameters and Characteristics.

Type Designator: FXT649SM

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 1

Maximum collector-base voltage |Ucb|, V: 35

Maximum collector-emitter voltage |Uce|, V: 25

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 2

Maximum junction temperature (Tj), °C: 175

Transition frequency (ft), MHz: 150

Collector capacitance (Cc), pF: 50

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of FXT649SM transistor: SO96

FXT649SM Equivalent Transistors - Cross-Reference Search

FXT649SM PDF doc:

4.1. fxt649.pdf Size:28K _diodes

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See also transistors datasheet: FXT601B , FXT601BSM , FXT603 , FXT603SM , FXT605 , FXT605SM , FXT614 , FXT649 , KD602 , FXT651 , FXT651SM , FXT653 , FXT653SM , FXT655 , FXT655SM , FXT657 , FXT657SM .

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