2N3715 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N3715

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 150

Maximum collector-base voltage |Ucb|, V: 80

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 7

Maximum collector current |Ic max|, A: 10

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 4

Collector capacitance (Cc), pF: 10

Forward current transfer ratio (hFE), min: 50

Noise Figure, dB: -

Package of 2N3715 transistor: TO204AA

2N3715 Equivalent Transistors - Cross-Reference Search

2N3715 PDF document for downloads:

1.1. 2n3715_2n3716.pdf Size:272K _motorola

Order this document MOTOROLA by 2N3715/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3715 Silicon NPN Power Transistors 2N3716 . . . designed for medium–speed switching and amplifier applications. These devices feature: • Total Switching Time at 3 A typically 1.15 µs 10 AMPERE • Gain Ranges Specified at 1 A and 3 A POWER TRANSISTORS • Low VCE(sat): typically 0.5 V at IC = 5 A and IB = 0.5 A SILICON NPN • Excellent Safe Operating Areas 60–80 VOLTS • Complement to 2N3791–92 150 WATTS CASE 1–07 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII TO–204AA IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIII IIII IIIIII IIIIII (TO–3) IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIII IIII IIIIIIIIIIIIIIII IIIIII IIII IIIIII IIIIII IIIIII IIIIII MAXIMUM RATINGS IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIII IIII IIIIIIIIIIIIIIII IIIIII IIII IIIIIIIIIIIIIIII IIIIII IIII IIIIII IIIIII IIIIII IIIIII IIIIII IIIIII Rating Symbol 2N3715 2N3716 Unit IIIIIIII

1.2. 2n3713_2n3714_2n3715_2n3716.pdf Size:88K _central

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1.3. 2n3713-2n3714-2n3715-2n3716-2n3789-2n3790-2n3791-2n3792.pdf Size:172K _comset

2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP types are 2N3789, 2N3790, 2N3791 and 2N3792 respectively. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit 2N3789 2N3791 80 2N3713 2N3715 VCBO Collector-BaseVoltage IE = 0 V 2N3790 2N3792 100 2N3714 2N3716 2N3789 2N3791 60 2N3713 2N3715 VCEO Collector-Emitter Voltage IB = 0 V 2N3790 2N3792 80 2N3714 2N3716 2N3789 2N3790 2N3791 2N3792 VEBO Emitter-Base Voltage IC = 0 7.0 V 2N3713 2N3714 2N3715 2N3716 COMSET SEMICONDUCTORS 1/5 2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP Symbol Ratings Value Unit 2N3789 2N3790 2N3791 2N3792 Collector Current IC 10 A 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 IB Base Cu

1.4. 2n3715_3716.pdf Size:38K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N3715/3716 DESCRIPTION ·DC Current Gain- : hFE= 50-150@IC= 1A ·Wide Area of Safe Operation ·Low Collector Saturation Voltage- : VCE(sat)= 0.8V(Max.)@ IC= 5A ·Complement to Type 2N3791/3792 APPLICATIONS ·Designed for medium-speed switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT 2N3715 80 V Collector-Base Voltage V CBO 2N3716 100 2N3715 60 V Collector-Emitter Voltage V CEO 2N3716 80 V Emitter-Base Voltage 7 V EBO I Collector Current-Continuous 10 A C I Base Current 4 A B P Collector Power Dissipation@T =25? 150 W C C T Junction Temperature 200 ? J Tstg Storage Temperature -65~200 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.17 ?/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Powe

See also transistors datasheet: 2N3712S , 2N3713 , 2N371-33 , 2N3713HS , 2N3713-SM , 2N3714 , 2N3714HS , 2N3714-SM , 2N2222 , 2N3715HS , 2N3715-SM , 2N3716 , 2N3716HS , 2N3716-SM , 2N3717 , 2N3718 , 2N3719 .

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