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2N3716 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N3716

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 150

Maximum collector-base voltage |Ucb|, V: 100

Maximum collector-emitter voltage |Uce|, V: 80

Maximum emitter-base voltage |Ueb|, V: 7

Maximum collector current |Ic max|, A: 10

Maksimalna temperatura (Tj), °C: 200

Transition frequency (ft), MHz: 4

Collector capacitance (Cc), pF: 10

Forward current transfer ratio (hFE), min: 50

Noise Figure, dB: -

Package of 2N3716 transistor: TO204AA

2N3716 Equivalent Transistors - Cross-Reference Search

2N3716 PDF doc:

1.1. 2n3715_2n3716.pdf Size:272K _motorola

Order this document MOTOROLA by 2N3715/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3715 Silicon NPN Power Transistors 2N3716 . . . designed for medium–speed switching and amplifier applications. These devices feature: • Total Switching Time at 3 A typically 1.15 µs 10 AMPERE • Gain Ranges Specified at 1 A and 3 A POWER TRANSISTORS • Low VCE(sat): typically 0.5 V at IC = 5 A and IB = 0.5 A SILICON NPN • Excellent Safe Operating Areas 60–80 VOLTS • Complement to 2N3791–92 150 WATTS CASE 1–07 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII TO–204AA IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIII IIII IIIIII IIIIII (TO–3) IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIII IIII IIIIIIIIIIIIIIII IIIIII IIII IIIIII IIIIII IIIIII IIIIII MAXIMUM RATINGS IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIII IIII IIIIIIIIIIIIIIII IIIIII IIII IIIIIIIIIIIIIIII IIIIII IIII IIIIII IIIIII IIIIII IIIIII IIIIII IIIIII Rating Symbol 2N3715 2N3716 Unit IIIIIIII

1.2. 2n3713_2n3714_2n3715_2n3716.pdf Size:88K _central

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1.3. 2n3713-2n3714-2n3715-2n3716-2n3789-2n3790-2n3791-2n3792.pdf Size:172K _comset

2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP types are 2N3789, 2N3790, 2N3791 and 2N3792 respectively. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit 2N3789 2N3791 80 2N3713 2N3715 VCBO Collector-BaseVoltage IE = 0 V 2N3790 2N3792 100 2N3714 2N3716 2N3789 2N3791 60 2N3713 2N3715 VCEO Collector-Emitter Voltage IB = 0 V 2N3790 2N3792 80 2N3714 2N3716 2N3789 2N3790 2N3791 2N3792 VEBO Emitter-Base Voltage IC = 0 7.0 V 2N3713 2N3714 2N3715 2N3716 COMSET SEMICONDUCTORS 1/5 2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP Symbol Ratings Value Unit 2N3789 2N3790 2N3791 2N3792 Collector Current IC 10 A 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 IB Base Cu

1.4. 2n3716.pdf Size:116K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3716 DESCRIPTION Ў¤ With TO-3 package APPLICATIONS Ў¤ They are intended for use in power linear and switching applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg I E SEM HANG NC Collector-emitter voltage Emitter-base voltage Collector current Base current Total Power Dissipation Junction temperature Storage temperature TC=25Ўж Collector-base voltage PARAMETER Open emitter Open base OND IC CONDITIONS CTOR U VALUE 100 80 7 10 4 150 200 -65~200 UNIT V V V A A W Ўж Ўж Open collector THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT Ўж /W

See also transistors datasheet: 2N3713HS , 2N3713SM , 2N3714 , 2N3714HS , 2N3714SM , 2N3715 , 2N3715HS , 2N3715SM , 2N2222A , 2N3716HS , 2N3716SM , 2N3717 , 2N3718 , 2N3719 , 2N372 , 2N3720 , 2N3721 .

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