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FZT653 Transistor Datasheet. Parameters and Characteristics.

Type Designator: FZT653

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 2

Maximum collector-base voltage |Ucb|, V: 120

Maximum collector-emitter voltage |Uce|, V: 100

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 2

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 140

Collector capacitance (Cc), pF: 30

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of FZT653 transistor: TO236

FZT653 Equivalent Transistors - Cross-Reference Search

FZT653 PDF doc:

1.1. fzt653.pdf Size:102K _diodes

SOT223 NPN SILICON PLANAR FZT653 HIGH PERFORMANCE TRANSISTOR ISSUE 3– FEBRUARY 1995 T C i I T T T E T I D T I T C B ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I Di i i T ° i T T T ° ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). T I T IT DITI II V V I µ V I II i V V I V I i V V I µ V I II I µ V V µ V V T ° i I µ V V II i V V I I i V I V I I i V V I I i V I i V 8 V I V V T V I i I V V T i I V V I V V I V V T i i T I V V i V V i i Ti 8 I V V I I I i i I i µ D I ? i i iI I i i FZT653 TYPICAL CHARACTERISTICS I - II I - II hFE v IC VCE(sat) v IC I - II I - II VBE(sat) v IC VBE(on) v IC µ V II i V I V I - II Safe Operating Area Switching Speeds h - Gain V - (Volts) V - (Volts) V - (Volts) Switching time

5.1. fzt658.pdf Size:83K _diodes

SOT223 NPN SILICON PLANAR FZT658 HIGH VOLTAGE TRANSISTOR ISSUE 4 - OCTOBER 1995 T V I V C C i I E E C C T T T 8 T I D T I T 8 B B ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I Di i i T ° i T T T ° ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). T I IT DITI V I V V I µ V V I V V I µ II I V V i I V V V II i V V I I i V I V I I V I I i V V I I i V I i V V I V V T V I i I V V T i I V V I V V T i i T I V V i V V i i Ti I V V I I I i i I i µ D I ? i i iI I i i FZT658 TYPICAL CHARACTERISTICS I - II I - II VCE(sat) v IC VCE(sat) v IC I - II I - II hFE v IC VBE(sat) v IC µ I - II V II i V I V VBE(on) v IC Safe Operating Area V - (Volts) V - (Volts) V - (Volts) h - Typical gain h - Normalised Gain V - (Volts)

5.2. fzt651.pdf Size:99K _diodes

SOT223 NPN SILICON PLANAR FZT651 HIGH PERFORMANCE TRANSISTORS ISSUE 2 – FEBRUARY 1995 T V I V C i i I E T T T C B T I D T I T ABSOLUTE MAXIMUM RATINGS. T V IT II V I V 8 V II i V I V V i V I V V I I i II I Di i i T ° i T T T ° ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). T I T IT DITI II V 8 V I µ V I II i V V I V I i V V I µ V I II I µ V V µ V V T ° i I µ V V II i V V I I i V I V I I i V V I I i V I i V 8 V I V V T V I i I V V T i I V V 8 I V V 8 I V V T i i T I V V i i Ti I V V I I 8 i V V I i i I i µ D I ? i i iI I i i FZT651 TYPICAL CHARACTERISTICS I - II I - II hFE v IC VCE(sat) v IC I - II I - II VBE(sat) v IC VBE(on) v IC µ V II i V I V I - II Safe Operating Area Switching Speeds 8 h - Gain V - (Volts) V - (Volts) V - (Volts) Switching time

See also transistors datasheet: FZT591 , FZT593 , FZT600A , FZT600B , FZT604 , FZT605 , FZT649 , FZT651 , 2SA1015 , FZT655 , FZT657 , FZT658 , FZT688B , FZT689B , FZT690B , FZT692B , FZT694B .

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