FZT949 Transistor Datasheet. Parameters and Characteristics.

Type Designator: FZT949

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 3

Maximum collector-base voltage |Ucb|, V: 50

Maximum collector-emitter voltage |Uce|, V: 30

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 6

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 80

Collector capacitance (Cc), pF: 163

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of FZT949 transistor: TO236

FZT949 Equivalent Transistors - Cross-Reference Search

FZT949 PDF document for downloads:

1.1. fzt948_fzt949.pdf Size:221K _diodes

SOT223 PNP SILICON PLANAR HIGH CURRENT FZT948 (HIGH PERFORMANCE) TRANSISTORS FZT949 ISSUE 2 - NOVEMBER 1995 FEATURES * Extremely low equivalent on-resistance; RCE(sat) C * 6 Amps continuous current * Up to 20 Amps peak current * Very low saturation voltage E * Excellent hFE characteristics specified upto 20 Amps C B PARTMARKING DETAILS — DEVICE TYPE IN FULL ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL FZT948 FZT949 UNIT Collector-Base Voltage VCBO -40 -50 V Collector-Emitter Voltage VCEO -20 -30 V Emitter-Base Voltage VEBO -6 V Peak Pulse Current ICM -20 A Continuous Collector Current IC -6 -5.5 A Power Dissipation at Tamb=25°C Ptot 3W Operating and Storage Temperature Tj:Tstg -55 to +150 °C Range *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum TBA FZT948 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDI

See also transistors datasheet: FZT796A , FZT849 , FZT851 , FZT853 , FZT855 , FZT857 , FZT869 , FZT948 , BC137 , FZT951 , FZT953 , FZT955 , FZT956 , FZT957 , FZT958 , FZT968 , G2N2955 .

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