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FZT956 Transistor Datasheet. Parameters and Characteristics.

Type Designator: FZT956

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 3

Maximum collector-base voltage |Ucb|, V: 220

Maximum collector-emitter voltage |Uce|, V: 200

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 2

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 110

Collector capacitance (Cc), pF: 32

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of FZT956 transistor: TO236

FZT956 Equivalent Transistors - Cross-Reference Search

FZT956 PDF doc:

1.1. fzt955_fzt956.pdf Size:229K _diodes

SOT223 PNP SILICON PLANAR HIGH CURRENT FZT955 (HIGH PERFORMANCE) TRANSISTORS FZT956 ISSUE 3 – MARCH 2005 FEATURES * 4 Amps continuous current (10 Amps peak current) C * Very low saturation voltages * Excellent gain characteristics specified up to 3 Amps E PARTMARKING DETAILS – DEVICE TYPE IN FULL C COMPLEMENTARY TYPES – FZT955 - FZT855 B FZT956 - N/A ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL FZT955 FZT956 UNIT Collector-Base Voltage VCBO -180 -220 V Collector-Emitter Voltage VCEO -140 -200 V Emitter-Base Voltage VEBO -6 V Peak Pulse Current ICM -10 -5 A Continuous Collector Current IC -4 -2 A Power Dissipation at Tamb=25°C Ptot 3W Operating and Storage Temperature Tj:Tstg -55 to +150 °C Range *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum 3 - 284 FZT955 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) T I T IT DITI II V 8 V I µ V I I

See also transistors datasheet: FZT855 , FZT857 , FZT869 , FZT948 , FZT949 , FZT951 , FZT953 , FZT955 , BC547C , FZT957 , FZT958 , FZT968 , G2N2955 , G2N3055 , G6004 , G6005 , GA52829 .

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