2N3721 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N3721

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.2

Maximum collector-base voltage |Ucb|, V: 18

Maximum collector-emitter voltage |Uce|, V: 18

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 120

Collector capacitance (Cc), pF: 12

Forward current transfer ratio (hFE), min: 60

Noise Figure, dB: -

Package of 2N3721 transistor: TO98-1

2N3721 Equivalent Transistors - Cross-Reference Search

2N3721 PDF document for downloads:

5.1. 2n372.pdf Size:166K _rca

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5.2. 2n3724_2n3725-a.pdf Size:492K _central

2N3724 2N3725 www.centralsemi.com 2N3725A DESCRIPTION: NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR 2N3724, 2N3725, 2N3725A types are Silicon NPN Planar Epitaxial Transistors designed for high voltage, high current, high speed switching applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL 2N3724 2N3725 2N3725A UNITS Collector-Base Voltage VCBO 50 80 80 V Collector-Emitter Voltage VCEO 30 50 50 V Emitter-Base Voltage VEBO 6.0 V Continuous Collector Current IC 1.2 A Peak Collector Current ICM 1.75 A Power Dissipation PD 0.8 0.8 1.0 W Power Dissipation (TC=25°C) PD 3.5 3.5 5.0 W Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N3724 2N3725 2N3725A SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS IB VCE=50V - 10 - - - - µA IB VCE=80V - - - 10 - 10 µA ICBO VCB=40V - 1.7 - - - - µA ICBO VCB=40V, TA=100°C - 120 - - - - µA ICBO VCB=60V - - - 1.7

5.3. 2n3726_2n3727.pdf Size:108K _central

TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com

5.4. 2n3724a.pdf Size:11K _semelab

2N3724A Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 30V dia. IC = 1.2A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 can be processed in accordance with the 0.74 (0.029) requirements of BS, CECC and JAN, 1.14 (0.045) 0.71 (0.028) JANTX, JANTXV and JANS specifications 0.86 (0.034) 45° TO39 (TO205AD) PINOUTS 1 – Emitter 2 – Base 3 – Collector Parameter Test Conditions Min. Typ. Max. Units VCEO* 30 V IC(CONT) 1.2 A hFE @ 1/0.1 (VCE / IC) 60 150 - ft 300M Hz PD 0.8 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without not

5.5. 2n3724.pdf Size:11K _semelab

2N3724 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 30V dia. IC = 0.5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 can be processed in accordance with the 0.74 (0.029) requirements of BS, CECC and JAN, 1.14 (0.045) 0.71 (0.028) JANTX, JANTXV and JANS specifications 0.86 (0.034) 45° TO39 (TO205AD) PINOUTS 1 – Emitter 2 – Base 3 – Collector Parameter Test Conditions Min. Typ. Max. Units VCEO* 30 V IC(CONT) 0.5 A hFE @ 1/0.1 (VCE / IC) 60 150 - ft 300M Hz PD 0.8 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without noti

5.6. 2n3720.pdf Size:55K _microsemi

7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N3720 APPLICATIONS: • High-Speed Switching • Medium-Current Switching • High-Frequency Amplifiers FEATURES: • Collector-Emitter Sustaining Voltage: Silicon PNP VCEO(SUS) = 60 Vdc (Min) - 2N3720 Power Transistors • DC Current Gain: hFE = 25-180 @ IC = 1.0 Adc • Low Collector-Emitter Saturation Voltage: VCE(sat) = 0.75 Vdc @ I = 1.0 Adc C • High Current-Gain - Bandwidth Product: fT = 90 MHz (Typ) DESCRIPTION: DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques

See also transistors datasheet: 2N3716 , 2N3716HS , 2N3716-SM , 2N3717 , 2N3718 , 2N3719 , 2N372 , 2N3720 , 2N3906 , 2N3722 , 2N3723 , 2N372-33 , 2N3724 , 2N3724A , 2N3725 , 2N3725A , 2N3726 .

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