GBD646 Transistor Datasheet. Parameters and Characteristics.

Type Designator: GBD646

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 70

Maximum collector-base voltage |Ucb|, V: 80

Maximum collector-emitter voltage |Uce|, V: 80

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 5

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 1

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 750

Noise Figure, dB: -

Package of GBD646 transistor: TO220

GBD646 Equivalent Transistors - Cross-Reference Search

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See also transistors datasheet: GA53270 , GBC109 , GBD179 , GBD189 , GBD190 , GBD266 , GBD267 , GBD645 , 9014 , GC100 , GC101 , GC102 , GC103 , GC104 , GC111 , GC112 , GC115 .

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