GC239 Transistor Datasheet. Parameters and Characteristics.

Type Designator: GC239

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.3

Maximum collector-base voltage |Ucb|, V: 30

Maximum collector-emitter voltage |Uce|, V: 20

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C: 125

Transition frequency (ft), MHz: 150

Collector capacitance (Cc), pF: 5

Forward current transfer ratio (hFE), min: 200

Noise Figure, dB: -

Package of GC239 transistor: TO92

GC239 Equivalent Transistors - Cross-Reference Search

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See also transistors datasheet: GC216 , GC217 , GC221 , GC223 , GC223A , GC223B , GC237 , GC238 , 2N4401 , GC269 , GC300 , GC300A , GC300B , GC300C , GC300D , GC301 , GC307 .

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