GE10002
Transistor Datasheet. Parameters and Characteristics. Type Designator: GE10002
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 175
Maximum collector-base voltage |Ucb|, V: 450
Maximum collector-emitter voltage |Uce|, V: 350
Maximum emitter-base voltage |Ueb|, V: 8
Maximum collector current |Ic max|, A: 10
Maximum junction temperature (Tj), °C: 200
Transition frequency (ft), MHz:
Collector capacitance (Cc), pF: 325
Forward current transfer ratio (hFE), min: 30
Noise Figure, dB: - Package of GE10002
transistor: TO3
GE10002
Equivalent Transistors - Cross-Reference Search GE10002
PDF document for downloads: PDF unavailable! See also transistors datasheet: GD607
, GD608
, GD609
, GD617
, GD618
, GD619
, GE10000
, GE10001
, AD162
, GE10003
, GE10004
, GE10005
, GE10006
, GE10007
, GE10008
, GE10009
, GE10015
. Keywords| GE10002
Datasheet | GE10002
Datenblatt | GE10002
RoHS | GE10002
Distributor | | GE10002
Application Notes | GE10002
Component | GE10002
Circuit | GE10002
Schematic | | GE10002
Equivalent | GE10002
Cross Reference | GE10002
Data Sheet | GE10002
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