GEP2955
Transistor Datasheet. Parameters and Characteristics. Type Designator: GEP2955
Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc), W: 115
Maximum collector-base voltage |Ucb|, V: 100
Maximum collector-emitter voltage |Uce|, V: 60
Maximum emitter-base voltage |Ueb|, V: 7
Maximum collector current |Ic max|, A: 15
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 2.5
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 20
Noise Figure, dB: - Package of GEP2955
transistor: TO220
GEP2955
Equivalent Transistors - Cross-Reference Search GEP2955
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. Keywords| GEP2955
Datasheet | GEP2955
Datenblatt | GEP2955
RoHS | GEP2955
Distributor | | GEP2955
Application Notes | GEP2955
Component | GEP2955
Circuit | GEP2955
Schematic | | GEP2955
Equivalent | GEP2955
Cross Reference | GEP2955
Data Sheet | GEP2955
Fiche Technique |
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