GES3416 Transistor Datasheet. Parameters and Characteristics.

Type Designator: GES3416

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.36

Maximum collector-base voltage |Ucb|, V: 50

Maximum collector-emitter voltage |Uce|, V: 50

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.5

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 75

Noise Figure, dB: -

Package of GES3416 transistor: TO92

GES3416 Equivalent Transistors - Cross-Reference Search

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See also transistors datasheet: GES3397 , GES3398 , GES3402 , GES3403 , GES3404 , GES3405 , GES3414 , GES3415 , MPSA42 , GES3417 , GES3494 , GES3495 , GES3496 , GES3497 , GES3499 , GES3563 , GES3564 .

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