GES3569 Transistor Datasheet. Parameters and Characteristics.

Type Designator: GES3569

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.3

Maximum collector-base voltage |Ucb|, V: 80

Maximum collector-emitter voltage |Uce|, V: 40

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.5

Maximum junction temperature (Tj), °C: 125

Transition frequency (ft), MHz: 60

Collector capacitance (Cc), pF: 20

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of GES3569 transistor: TO236

GES3569 Equivalent Transistors - Cross-Reference Search

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See also transistors datasheet: GES3497 , GES3499 , GES3563 , GES3564 , GES3565 , GES3566 , GES3567 , GES3568 , OC44 , GES3634 , GES3635 , GES3636 , GES3637 , GES3638 , GES3638A , GES3639 , GES3640 .

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