GES4889 Transistor Datasheet. Parameters and Characteristics.

Type Designator: GES4889

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.3

Maximum collector-base voltage |Ucb|, V: 150

Maximum collector-emitter voltage |Uce|, V: 150

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C: 125

Transition frequency (ft), MHz: 160

Collector capacitance (Cc), pF: 4

Forward current transfer ratio (hFE), min: 80

Noise Figure, dB: -

Package of GES4889 transistor: TO236

GES4889 Equivalent Transistors - Cross-Reference Search

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See also transistors datasheet: GES4355 , GES4356 , GES4400 , GES4401 , GES4402 , GES4403 , GES4450 , GES4888 , 2N3773 , GES4890 , GES4916 , GES4917 , GES4926 , GES4927 , GES4928 , GES4929 , GES4930 .

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