GES4927 Transistor Datasheet. Parameters and Characteristics.

Type Designator: GES4927

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.5

Maximum collector-base voltage |Ucb|, V: 250

Maximum collector-emitter voltage |Uce|, V: 250

Maximum emitter-base voltage |Ueb|, V: 7

Maximum collector current |Ic max|, A: 0.05

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 30

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of GES4927 transistor: TO92

GES4927 Equivalent Transistors - Cross-Reference Search

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See also transistors datasheet: GES4403 , GES4450 , GES4888 , GES4889 , GES4890 , GES4916 , GES4917 , GES4926 , 2N5401 , GES4928 , GES4929 , GES4930 , GES4931 , GES4964 , GES4965 , GES5087 , GES5088 .

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