GES5141 Transistor Datasheet. Parameters and Characteristics.

Type Designator: GES5141

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.2

Maximum collector-base voltage |Ucb|, V: 6

Maximum collector-emitter voltage |Uce|, V: 6

Maximum emitter-base voltage |Ueb|, V: 4

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C: 125

Transition frequency (ft), MHz: 300

Collector capacitance (Cc), pF: 7

Forward current transfer ratio (hFE), min: 30

Noise Figure, dB: -

Package of GES5141 transistor: TO236

GES5141 Equivalent Transistors - Cross-Reference Search

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See also transistors datasheet: GES5132 , GES5133 , GES5135 , GES5136 , GES5137 , GES5138 , GES5139 , GES5140 , BF194 , GES5142 , GES5143 , GES5172 , GES5179 , GES5305 , GES5306 , GES5306A , GES5307 .

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