GES6000 Transistor Datasheet. Parameters and Characteristics.

Type Designator: GES6000

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.4

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 25

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.5

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 75

Collector capacitance (Cc), pF: 12

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of GES6000 transistor: TO92

GES6000 Equivalent Transistors - Cross-Reference Search

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See also transistors datasheet: GES5827A , GES5828 , GES5828A , GES5855 , GES5856 , GES5857 , GES5858 , GES5910 , BC147 , GES6001 , GES6002 , GES6003 , GES6004 , GES6005 , GES6006 , GES6007 , GES6010 .

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