GES6220 Transistor Datasheet. Parameters and Characteristics.

Type Designator: GES6220

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.5

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 200

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.05

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 30

Collector capacitance (Cc), pF: 8

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of GES6220 transistor: TO92

GES6220 Equivalent Transistors - Cross-Reference Search

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See also transistors datasheet: GES6012 , GES6013 , GES6014 , GES6015 , GES6017 , GES6076 , GES6218 , GES6219 , TIP41C , GES6221 , GES6222 , GES6224 , GES6426 , GES6427 , GES6560 , GES6562 , GES6563 .

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