2N3764A Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N3764A

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.5

Maximum collector-base voltage |Ucb|, V: 40

Maximum collector-emitter voltage |Uce|, V: 40

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 1.5

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 180

Collector capacitance (Cc), pF: 15

Forward current transfer ratio (hFE), min: 30

Noise Figure, dB: -

Package of 2N3764A transistor: TO5

2N3764A Equivalent Transistors - Cross-Reference Search

2N3764A PDF document for downloads:

4.1. 2n3762_2n3763_2n3764_2n3765.pdf Size:70K _microsemi

TECHNICAL DATA PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/396 Devices Qualified Level JAN 2N3762 2N3763 2N3764 2N3765 JANTX 2N3762L 2N3763L JANTXV MAXIMUM RATINGS 2N3762* 2N3763* Ratings Symbol Unit 2N3764 2N3765 Collector-Emitter Voltage 40 60 Vdc VCEO Collector-Base Voltage 40 60 Vdc VCBO TO-39* (TO-205AD) Emitter-Base Voltage 5.0 Vdc VEBO 2N3762, 2N3763 Collector Current 1.5 Adc IC 2N3762* 1 2N3764 2 2N3763* 2N3765 Total Power Dissipation @ T = +250C PT 1.0 0.5 W A 0 Operating & Storage Junction Temp. Range -55 to +200 C Top Tstg , TO-5* THERMAL CHARACTERISTICS 2N3762L, 2N3763L Symbol Max. Unit Characteristics 2N3762* 2N3764 2N3763* 2N3765 0 Thermal Resistance Junction-to-Case 60 88 C/W R?JC *Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices TO-46* (TO-206AB) 1) Derate linearly at 5.71 mW/0C for T > +250C 2N3764, 2N3765 A 2) Derate

5.1. 2n376.pdf Size:262K _rca

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See also transistors datasheet: 2N3751 , 2N3752 , 2N376 , 2N3762 , 2N3762S , 2N3763 , 2N3763S , 2N3764 , BF194 , 2N3765 , 2N3766 , 2N3766-SM , 2N3767 , 2N3767-SM , 2N376A , 2N377 , 2N3770 .

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