GFT32/30
Transistor Datasheet. Parameters and Characteristics. Type Designator: GFT32/30
Material of transistor: Ge
Polarity: PNP
Maximum collector power dissipation (Pc), W: 0.125
Maximum collector-base voltage |Ucb|, V: 30
Maximum collector-emitter voltage |Uce|, V: 0
Maximum emitter-base voltage |Ueb|, V: 0
Maximum collector current |Ic max|, A: 0.3
Maximum junction temperature (Tj), °C: 75
Transition frequency (ft), MHz: 0.5
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 30
Noise Figure, dB: - Package of GFT32/30
transistor: CAN
GFT32/30
Equivalent Transistors - Cross-Reference Search GFT32/30
PDF document for downloads: PDF unavailable! See also transistors datasheet: GFT25/60
, GFT25R
, GFT31
, GFT31/15
, GFT31/30
, GFT31/60
, GFT32
, GFT32/15
, BC107
, GFT32/60
, GFT34
, GFT34/15
, GFT34/30
, GFT34/60
, GFT41
, GFT42A
, GFT42B
. Keywords| GFT32/30
Datasheet | GFT32/30
Datenblatt | GFT32/30
RoHS | GFT32/30
Distributor | | GFT32/30
Application Notes | GFT32/30
Component | GFT32/30
Circuit | GFT32/30
Schematic | | GFT32/30
Equivalent | GFT32/30
Cross Reference | GFT32/30
Data Sheet | GFT32/30
Fiche Technique |
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