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2N3771 Transistor. Datasheet pdf. Equivalent

Type Designator: 2N3771

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 30 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 0.2 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO204AA

2N3771 Transistor Equivalent Substitute - Cross-Reference Search

2N3771 PDF:

1.1. 2n3771re.pdf Size:204K _motorola

2N3771
2N3771

Order this document MOTOROLA by 2N3771/D SEMICONDUCTOR TECHNICAL DATA * 2N3771 High Power NPN Silicon Power 2N3772 Transistors *Motorola Preferred Device . . . designed for linear amplifiers, series pass regulators, and inductive switching 20 and 30 AMPERE applications. POWER TRANSISTORS • Forward Biased Second Breakdown Current Capability NPN SILICON IS/b = 3.75 Adc @ VCE = 40 Vdc

1.2. 2n3771.pdf Size:42K _st

2N3771
2N3771

2N3771 2N3772 ® HIGH POWER NPN SILICON TRANSISTOR STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 2N3771 2N3

1.3. 2n3771_2n3772.pdf Size:44K _st

2N3771
2N3771

2N3771 2N3772 ® HIGH POWER NPN SILICON TRANSISTOR STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 2N3771 2N3

1.4. 2n3771_2n3772.pdf Size:85K _onsemi

2N3771
2N3771

2N3771, 2N3772 2N3771 is a Preferred Device High Power NPN Silicon Power Transistors These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. Features http://onsemi.com • Forward Biased Second Breakdown Current Capability 20 and 30 AMPERE IS/b = 3.75 Adc @ VCE = 40 Vdc - 2N3771 = 2.5 Adc @ VCE = 60 Vdc - 2N3772 POWER TRANSISTORS •

1.5. 2n3771.pdf Size:181K _inchange_semiconductor

2N3771
2N3771

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3771 DESCRIPTION ·Excellent Safe Operating Area ·High DC Current Gain-hFE=15(Min)@IC = 15A ·Low Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC = 15A APPLICATIONS ·Designed for linear amplifiers, series pass regulators, and inductive switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?)

Datasheet: 2N3765 , 2N3766 , 2N3766SM , 2N3767 , 2N3767SM , 2N376A , 2N377 , 2N3770 , 9015 , 2N3772 , 2N3773 , 2N3774 , 2N3775 , 2N3776 , 2N3777 , 2N3778 , 2N3779 .

 


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