GME1001 Transistor Datasheet. Parameters and Characteristics.

Type Designator: GME1001

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.25

Maximum collector-base voltage |Ucb|, V: 45

Maximum collector-emitter voltage |Uce|, V: 45

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0

Maximum junction temperature (Tj), °C: 125

Transition frequency (ft), MHz: 300

Collector capacitance (Cc), pF: 2.5

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of GME1001 transistor: TO106

GME1001 Equivalent Transistors - Cross-Reference Search

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See also transistors datasheet: GI3793 , GI3794 , GM290A , GM378A , GM656A , GME0404 , GME0404-1 , GME0404-2 , 2N4403 , GME1002 , GME2001 , GME2002 , GME3001 , GME3002 , GME4001 , GME4002 , GME4003 .

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