GS111D Transistor Datasheet. Parameters and Characteristics.

Type Designator: GS111D

Material of transistor: Ge

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.083

Maximum collector-base voltage |Ucb|, V: 20

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.21

Maximum junction temperature (Tj), °C: 90

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 90

Noise Figure, dB: -

Package of GS111D transistor: TO39

GS111D Equivalent Transistors - Cross-Reference Search

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See also transistors datasheet: GS100C , GS100D , GS109B , GS109C , GS109D , GS110 , GS111B , GS111C , BC548 , GS111E , GS112B , GS112C , GS112D , GS112E , GS121B , GS121C , GS121D .

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