All Transistors. 2N3776 Datasheet

 

2N3776 Transistor. Datasheet pdf. Equivalent

Type Designator: 2N3776

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 5 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 200 ¬įC

Transition Frequency (ft): 1 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO5

2N3776 Transistor Equivalent Substitute - Cross-Reference Search

2N3776 Datasheet PDF:

5.1. 2n3773_2n6609.pdf Size:205K _motorola

2N3776
2N3776

Order this document MOTOROLA by 2N3773/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3773* Complementary Silicon Power PNP 2N6609 Transistors The 2N3773 and 2N6609 are PowerBase power transistors designed for high *Motorola Preferred Device power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid driv

5.2. 2n3771re.pdf Size:204K _motorola

2N3776
2N3776

Order this document MOTOROLA by 2N3771/D SEMICONDUCTOR TECHNICAL DATA * 2N3771 High Power NPN Silicon Power 2N3772 Transistors *Motorola Preferred Device . . . designed for linear amplifiers, series pass regulators, and inductive switching 20 and 30 AMPERE applications. POWER TRANSISTORS ē Forward Biased Second Breakdown Current Capability NPN SILICON IS/b = 3.75 Adc @ VCE = 40 Vdc

5.3. 2n3773.pdf Size:83K _st

2N3776
2N3776

2N3773 High power NPN transistor Features ¶ High power dissipation ¶ Low collector-emitter saturation voltage Description The device is a planar NPN transistor mounted in 1 TO-3 metal case. It is intended for linear 2 amplifiers and inductive switching applications. TO-3 Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking Package Packaging 2N3773 2N3773

5.4. 2n3771.pdf Size:42K _st

2N3776
2N3776

2N3771 2N3772 ģ HIGH POWER NPN SILICON TRANSISTOR STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 2N3771 2N3

5.5. 2n3771_2n3772.pdf Size:44K _st

2N3776
2N3776

2N3771 2N3772 ģ HIGH POWER NPN SILICON TRANSISTOR STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 2N3771 2N3

5.6. 2n3773_2n6609.pdf Size:80K _central

2N3776

TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 ē Fax: (631) 435-1824 www.centralsemi.com

5.7. 2n3773_2n6609.pdf Size:93K _onsemi

2N3776
2N3776

NPN 2N3773*, PNP 2N6609 Preferred Device Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBaset power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching http://onsemi.com circuits such as relay or solenoid drivers, DC-DC converters or inverters. 16 A COMPLEMENTARY Feature

5.8. 2n3771_2n3772.pdf Size:85K _onsemi

2N3776
2N3776

2N3771, 2N3772 2N3771 is a Preferred Device High Power NPN Silicon Power Transistors These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. Features http://onsemi.com ē Forward Biased Second Breakdown Current Capability 20 and 30 AMPERE IS/b = 3.75 Adc @ VCE = 40 Vdc - 2N3771 = 2.5 Adc @ VCE = 60 Vdc - 2N3772 POWER TRANSISTORS ē

5.9. 2n3773.pdf Size:32K _utc

2N3776
2N3776

UTC 2N3773/2N6099 P O W E R TRANSISTOR COMPLEMENTARY SILICON TRANSISTORS The 2N3773/2N6099 are power-base power transistors designed for high power audio, disk head positions and other linear applications. These device can be used in power switching circuits such as relay or solened drivers, DC to DC converters or inverts. FEATURES *High safe operating area(100 tested) 150W and 100V *

5.10. 2n3772.pdf Size:147K _utc

2N3776
2N3776

UNISONIC TECHNOLOGIES CO., LTD 2N3772 SILICON NPN TRANSISTOR SILICON NPN TRANSISTORS DESCRIPTION The UTC 2N3772 is a silicon power transistor in TO-3 metal case. It is designed for linear amplifiers, series pass regulators, and inductive switching applications. 1 TO-3 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2N3772

5.11. 2n3773.pdf Size:214K _cdil

2N3776
2N3776

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3773 NPN SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package Complementary 2N6609 General Purpose Amplifier specially suited for Power Conditioning Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL UNITS VALUE Collector Base Voltage VCBO 160 V Collector Emitter Voltage VCEO V 140 C

5.12. 2n3772.pdf Size:138K _cdil

2N3776
2N3776

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3772 NPN SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package Designed for Linear Amplifiers, Series Pass Regulators, and Inductive Switching Applications. ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL UNITS VALUE Collector Base Voltage VCBO V 100 Collector Emitter Voltage VCEO V 60 Collecto

5.13. 2n3773.pdf Size:172K _jmnic

2N3776
2N3776

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N3773 DESCRIPTION ·With TO-3 package ·Complement to type 2N6609 ·High DC current gain ·Low saturation voltage ·High safe operating area APPLICATIONS ·Designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as re

5.14. 2n3773.pdf Size:117K _inchange_semiconductor

2N3776
2N3776

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3 package Ў¤ Complement to type 2N6609 Ў¤ High DC current gain Ў¤ Low saturation voltage Ў¤ High safe operating area APPLICATIONS Ў¤ Designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as

5.15. 2n3771.pdf Size:181K _inchange_semiconductor

2N3776
2N3776

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3771 DESCRIPTION ·Excellent Safe Operating Area ·High DC Current Gain-hFE=15(Min)@IC = 15A ·Low Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC = 15A APPLICATIONS ·Designed for linear amplifiers, series pass regulators, and inductive switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?)

5.16. 2n3772.pdf Size:181K _inchange_semiconductor

2N3776
2N3776

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3772 DESCRIPTION ·Excellent Safe Operating Area ·High DC Current Gain-hFE=15(Min)@IC = 10A ·Low Saturation Voltage- : VCE(sat)= 1.4V(Max)@ IC = 10A APPLICATIONS ·Designed for linear amplifiers, series pass regulators, and inductive switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?)

Datasheet: 2N376A , 2N377 , 2N3770 , 2N3771 , 2N3772 , 2N3773 , 2N3774 , 2N3775 , TIP3055 , 2N3777 , 2N3778 , 2N3779 , 2N377A , 2N378 , 2N3780 , 2N3781 , 2N3782 .

 


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