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2N378 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N378

Material of transistor: Ge

Polarity: PNP

Maximum collector power dissipation (Pc), W: 106

Maximum collector-base voltage |Ucb|, V: 40

Maximum collector-emitter voltage |Uce|, V: 20

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 5

Maximum junction temperature (Tj), °C: 100

Transition frequency (ft), MHz: 0.1

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of 2N378 transistor: TO3

2N378 Equivalent Transistors - Cross-Reference Search

2N378 PDF doc:

1.1. 2n3789_2n3790_2n3791_2n3792.pdf Size:122K _central

DATA SHEET 2N3789 2N3790 2N3791 2N3792 PNP POWER TRANSISTORS JEDEC TO-3 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3789 Series types are silicon power transistors manufactured by the epitaxial planar process and designed for medium speed switching and amplifier applications. MAXIMUM RATINGS (TC=25°C unless otherwise noted) 2N3789 2N3790 SYMBOL 2N3791 2N3792 UNITS Collector-Base Voltage VCBO 60 80 V Collector-Emitter Voltage VCEO 60 80 V Emitter-Base Voltage VEBO 7.0 V Collector Current IC 10 A Base Current IB 4.0 A Power Dissipation PD 150 W Operating and Storage Junction Temperature TJ,Tstg -65 to +200 °C Thermal Resistance ?JC 1.17 °C/W ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) 2N3789 2N3790 2N3791 2N3792 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS ICEV VCE= Rated VCEO, VEB=1.5V 1.0 1.0 mA ICEV VCE= Rated VCEO, VEB=1.5V, TC=150°C 5.0 5.0 mA IEBO VEB=7.0V 5.0 5.0 mA BVCEO IC=200mA 60 80 V VCE(SAT) IC=4.0A, IB=400m

1.2. 2n3713-2n3714-2n3715-2n3716-2n3789-2n3790-2n3791-2n3792.pdf Size:172K _comset

2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP types are 2N3789, 2N3790, 2N3791 and 2N3792 respectively. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit 2N3789 2N3791 80 2N3713 2N3715 VCBO Collector-BaseVoltage IE = 0 V 2N3790 2N3792 100 2N3714 2N3716 2N3789 2N3791 60 2N3713 2N3715 VCEO Collector-Emitter Voltage IB = 0 V 2N3790 2N3792 80 2N3714 2N3716 2N3789 2N3790 2N3791 2N3792 VEBO Emitter-Base Voltage IC = 0 7.0 V 2N3713 2N3714 2N3715 2N3716 COMSET SEMICONDUCTORS 1/5 2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP Symbol Ratings Value Unit 2N3789 2N3790 2N3791 2N3792 Collector Current IC 10 A 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 IB Base Cu

1.3. 2n3789_2n3790-92.pdf Size:116K _mospec

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See also transistors datasheet: 2N3773 , 2N3774 , 2N3775 , 2N3776 , 2N3777 , 2N3778 , 2N3779 , 2N377A , BC548B , 2N3780 , 2N3781 , 2N3782 , 2N3783 , 2N3784 , 2N3785 , 2N3788 , 2N3789 .

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